2SD1733

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 !External dimensions (Unit : mm) 2SD1898 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 1.5 +0.2 −0.1 4.0±0.3 2.5+0.2 −0.1 (1) (2) (3) 0.4±0.1 1.5±0.1 1.0±0.2 0.4+0.1 −0.05 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 !Structure Epitaxial planer type NPN silicon transistor ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol : DF (1) Base (2) Collector (3) Emitter 2SD1733 1.5±0.3 6.5±0.2 5.1+0.2 −0.1 2.3+0.2 −0.1 0.5±0.1 2SD1768S 4±0.2 2±0.2 C0.5 3±0.2 5.5+0.3 −0.1 9.5±0.5 (15Min.) 0.9 1.5 0.75 0.9 0.65±0.1 2.5 0.45+0.15 −0.05 3Min. 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 5 2.5 +0.4 −0.1 0.5 0.45 +0.15 −0.05 (1) (2) (3) (1) (2) (3) Taping specifications ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base 2SD1863 6.8±0.2 2.5±0.2 0.65Max. 1.0 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 Taping specifications (1) Emitter (2) Collector (3) Base ROHM : ATV 14.5±0.5 4.4±0.2 0.9 1/4 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 120 80 5 1 2 2SD1898 Collector power dissipation 0.5 2 PC 1 10 0.3 1 Tj Tstg 150 −55 to +150 Unit V V V A (DC) A (Pulse) ∗1 W W W W (Tc=25°C) W W °C °C ∗2 ∗3 2SD1733 2SD1768S 2SD1863 Junction temperature Storage temperature ∗1 Pw=20ms, duty=1 / 2 ∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger. ∗3 When mounted on a 40×40×0.7mm ceramic board. !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current 2SD1863 DC current 2SD1733, 2SD1898 transfer ratio 2SD1768S Collector-emitter saturation voltage Transition frequency Output capacitance ∗ Measured using pulse current Symbol BVCBO BVCEO BVEBO ICBO IEBO Min. 120 80 5 − − 120 Typ. − − − − − − − − 0.15 100 20 Max. − − − 1 1 390 390 390 0.4 − − Unit V V V µA µA − − − V MHz pF IC=50µA IC=1mA IE=50µA VCB=100V VEB=4V Conditions hFE 82 120 VCE=3V, IC=0.5A ∗ VCE(sat) fT Cob − − − IC/IB=500mA/20mA VCE=10V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz 2/4 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors !Packaging specifications and hFE Package Code Type 2SD1898 2SD1733 2SD1768S 2SD1863 hFE PQR PQR QR R − − − − − − Basic ordering unit (pieces) T100 1000 Taping TL 2500 − TP 5000 − − TV2 2500 − − − hFE values are classified as follows : Item hFE P 82~180 Q 120~270 R 180~390 !Electrical characteristic curves 1000 COLLECTOR CURRENT : IC (mA) Ta=25°C VCE=5V COLLECTOR CURRENT : IC (A) Ta=25°C 1.0 0.8 0.6 0.4 1mA 0.2 0 0 IB=0mA 10 6mA 5mA 4mA 3mA 2mA DC CURRENT GAIN : hFE Ta=25°C 100 1000 VCE=3V 1V 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 BASE TO EMITTER VOLTAGE : VBE (V) 2 4 6 8 0 0 10 100 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fT (MHz) 500 200 100 50 20 10 5 2 1 2 5 10 20 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0 10 100 1000 IC/IB=20/1 10/1 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C Ta=25°C VCE=5V 1000 Ta=25°C f=1MHz IE=0A Ic=0A 100 10 50 100 200 500 1000 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : −IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Gain bandwidth product vs. emitter current Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors 10 5 COLLECTOR CURRENT : IC (A) 2 1 500m 200m 100m 50m 20m 10m 5m COLLECTOR CURRENT : IC (A) Ic Max (Pulse) Pw DC Ta=25°C Single non-repetitive pulse S 10 5 2 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 0.1 0.2 0.5 1 Ic Max (Pulse) DC Ta=25°C Single non-repetitive pulse Pw =1 0m S m 00 Pw =1 0 =1 m S Pw 0 =1 S 0m 2m 1m 0.1 0.2 0.5 1 2 5 10 20 50100 200 5001000 2 5 10 20 50100200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Safe operating area (2SD1863) Fig.8 Safe operating area (2SD1898) 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0