2SD1760_09

Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1760 1.5±0.3 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SD1864 6.8±0.2 2.5±0.2 5.5 +0.3 −0.1 9.5±0.5 0.9 1.5 0.9 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) (3) 0.5±0.1 2.54 2.54 14.5±0.5 0.75 0.65±0.1 2.5 0.65Max. 1.0 4.4±0.2 0.9 (1) (2) (3) 1.05 0.45±0.1 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : ATV (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SD1760 2SD1864 Symbol VCBO VCEO VEBO IC Limits 60 50 5 3 4.5 15 1 150 −55 to +150 Unit V V V A (DC) A (Pulse) ∗1 PC Tj Tstg W (Tc=25°C)∗2 W °C °C Junction temperature Storage temperature ∗1 Single pulse, PW=100ms ∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Min. 60 50 5 − − − 120 − − Typ. − − − − − 0.5 − 90 40 Max. − − − 1 1 1 390 − − Unit V V V μA μA V − MHz pF IC=50μA IC=1mA IE=50μA VCB=40V VEB=4V IC/IB=2A/0.2A Conditions ∗ ∗ ∗ VCE=3V, IC=0.5A VCE=5V, IE=−500mA, f=30MHz VCB=10V, IE=0A, f=1MHz www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.A 2SD1760 / 2SD1864 Packaging specifications and hFE Package Code Type 2SD1760 2SD1864 hFE QR QR − Basic ordering unit (pieces) TL 2500 Taping TV2 2500 − Data Sheet hFE values are classified as follows: Item hFE Q 120 to 270 R 180 to 390 Electrical characteristic curves 10 5 3.0 VCE = 3V COLLECTOR CURRENT : IC (A) Ta = 25°C 45mA 50mA COLLECTOR CURRENT : IC (A) 2.5 2.0 COLLECTOR CURRENT : IC (A) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 BASE TO EMITTER VOLTAGE : VBE (V) Ta = 100°C 25°C −25°C 40mA 35mA 30mA 25mA 20mA 3.0 2.5 2.0 1.5 20mA 15mA 50mA 45mA 40mA 35mA 30mA 25mA Ta = 25°C 15mA 1.5 10mA 10mA 1.0 0.5 0 0 5mA 1.0 IB = 5mA 0.5 0 0 PC = 15W IB = 0mA 1 2 3 4 5 10 20 30 40 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 1000 500 DC CURRENT GAIN : hFE Fig.2 Grounded emitter output characteristics ( Ι ) 1000 500 DC CURRENT GAIN : hFE Fig.3 Grounded-emitter output characteristics( ΙΙ ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta = 25°C VCE = 3V 10 5 2 1 0.5 0.2 IC/IB = 50 0.1 0.05 0.02 0.01 0.010.02 0.05 0.1 0.2 0.5 1 20 10 Ta = 25°C 200 100 50 VCE = 5V 200 100 50 20 10 5 2 Ta = 100°C 3V 20 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 25°C −25°C 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current( Ι ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASE SATURATION VOLTAGE : VBE (sat) (V) Fig.5 DC current gain vs. collector curren( ΙΙ ) Ta = 25°C VCE = 5V Fig.6 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 10 5 2 1 0.5 0.2 0.1 0.05 0.02 VCE (sat) 1 Ta = 100°C 25°C Ta = −25°C VBE (sat) 25°C 100°C TRANSITION FREQUENCY : fT (MHz) lC/lB = 10 1000 500 200 100 50 20 10 5 2 1 1 2 5 10 20 Ta = 25°C f = 1MHz IE = 0A −25°C 0.01 0.01 0.02 0.05 0.1 0.2 0.5 2 5 10 50 100 200 5001000 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : −IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.A 2SD1760 / 2SD1864 Data Sheet TRANSIENT THERMAL RESISTANCE : Rth (°C/W) 5 PW COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 2 1 0.5 DC 0.2 0.1 0.05 0.02 Ta = 25°C ∗Single pulse 0.01 0.1 0.2 0.5 1 VCE=5v IC=0.2A 100 5 Pw Pw s 0m s =1 m 00 =1 2 1 s∗ 0m ∗ =1 ms 00 =1 PW DC 0.5 0.2 0.1 0.05 Ta=25°C Single nonrepetitive 0.02 pulse 0.2 0.5 1 10 1 2 5 10 20 50 100 0.1 1 10 100 1sec 10sec 100sec 2 5 10 20 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) TIME : T (ms) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SD1760) TRANSIENT THERMAL RESISTANCE : Rt h (°C/W) Fig.11 Transient thermal resistance (2SD1760) Fig.12 Safe operating area (2SD1864) 100 10 1 0.1 1 10 100 1 10sec 100sec 1000sec TIME : T (ms) Fig.13 Transient thermal resistance (2SD1864) www.rohm.com c ○ 2009 ROHM Co., Ltd. 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