2SD1767T100Q

2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO 80 Collector-emitter voltage VCEO 80 V V Emitter-base voltage VEBO IC 0.7 V A(DC) ICP 1 A(Pulse) 5 2 ∗2 1 ∗3 1.6 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2SD1859 ∗1 Pw=10ms, duty=1/2 ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger. 2.5 6.8 0.9 Type ∗Denotes h 2SD1767 MPT3 0.5 2SD1859 PQR ATV QR DC∗ T100 1000 − TV2 2500 14.5 1.0 0.65Max. zPackaging specifications and hFE Package hFE Marking Code Basic ordering unit (pieces) 4.5 (1) Base (2) Collector (3) Emitter 4.4 PC 2SD1859 0.5 ROHM : MPT3 EIAJ : SC-62 ∗1 0.5 2SD1767 1.5 Unit 0.4 Limits 1.5 0.4 Symbol Collector power dissipation (1) (3) Parameter Collector-base voltage Collector current 0.5 (2) 3.0 zAbsolute maximum ratings (Ta=25°C) 2.5 (1) (2) (3) 2.54 2.54 1.05 0.45 Taping specifications ROHM : ATV FE (1) Emitter (2) Collector (3) Base zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 80 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 80 − − V IC=2mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA Collector cutoff current ICBO − − 0.5 µA VCB=50V Emitter cutoff current IEBO − − 0.5 µA VEB=4V VCE(sat) − 0.2 0.4 V IC/IB=500mA/50mA Transition frequency hFE fT 120 − − 120 390 − − MHz Output capacitance Cob − 10 − pF Collector-emitter saturation voltage DC current transfer ratio Conditions VCE/IC=3V/0.1A VCE=10V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz Rev.A 1/2 2SD1767 / 2SD1859 Transistors zElectrical characteristics curves 9mA 8mA 0.8 4mA 3mA 0.6 2mA 0.4 1mA 0.2 IB=0A 10 0 0 2 4 6 8 5 2 1 0.5 IC/IB=20 0.05 10 0.02 0.01 2 5 10 20 50 100 200 200 VCE=5V 3V 1V 100 50 0.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 2 Fig.2 Ground emitter propagetion characteristics 1000 Ta=25°C VCE=5V 500 200 100 50 20 10 −1 500 1000 COLLECTOR CURRENT : IC (mA) −2 −5 −10 −20 −50 −100 10 20 50 100 200 500 5000 Fig.3 DC current gain vs. collector current Ta=25°C f=1MHz IC=0A 100 50 20 10 5 0.5 EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current 5 COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.1 Ta=25°C 500 10 0.1 0 Ta=25°C 0.2 1000 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics Ta=25°C VCE=6V DC CURRENT GAIN : hFE 7mA 6mA 5mA COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10mA COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (A) 50 Ta=25°C 1.0 1 2 5 10 20 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.5 Resistance raito vs. emitter current Fig.6 Collector output capacitance vs. collector-base voltage 5 10 20 Fig.7 Emitter input capacitance vs. emitter-base voltage 50m 20m 10m Tc=25°C 5m ∗ Single nonrepetitive 2m pulse 1m 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (A) ∗ 2 C ∗ 1 200m 100m s 0m 0.5 EMITTER TO BASE VOLTAGE : VEB (V) D s 5 500m 0 =1 10 1 IC Max (Pulse) 0m =1 20 2 PW 50 2 5 COLLECTOR CURRENT : IC (A) 100 PW EMITTER INPUT CAPACITANCE : Cib (pF) 10 Ta=25°C f=1MHz IC=0A 1 IC Max Pulse IC Max PW 0.5 D 0.2 PW =1 00 =1 0m s m s ∗ ∗ C 0.1 Tc=25°C 0.05 ∗ Single nonrepetitive pulse 0.02 1 2 5 10 20 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operating area (2SD1859) Fig.9 Safe operating area (2SD1767) Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1