2SD1781K_08

2SD1781K Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K Features 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) IC / IB= 500 A / 50mA 2) High current capacity in compact package. 3) Complements the 2SB1197K. External dimensions (Unit : mm) 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) 0.2 1.1+0.1 − 0.8±0.1 (3) 0.1 0.4 +0.05 − 0.2 1.6+0.1 − 2.8±0.2 0~0.1 Structure Epitaxial planar type NPN silicon transistor All terminals have same dimensions 0.3~0.6 +0.1 0.15 −0.06 ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : AF∗ (1) Emitter (2) Base (3) Collector ∗ Denotes hFE Absolute maximum ratings (Ta=25 C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 40 32 5 0.8 1.5 200 150 −55 to +150 Unit V V V A (DC) A (Pulse) mW ∗ °C °C ∗ Single pulse Pw=100ms Rev.A 1/3 2SD1781K Transistors Electrical characteristics (Ta=25 C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 40 32 5 − − − 120 − − Typ. − − − − − 0.1 − 150 15 Max. − − − 0.5 0.5 0.4 390 − − Unit V V V IC=50μA IC=1mA IE=50μA VCB=20V VEB=4V IC/IB=500mA/50mA VCE=3V, IC=100mA VCE=5V, IE= −50mA, f=100MHz VCB=10V, IE=0A, f=1MHz Conditions μA μA V − MHz pF Packaging specifications and hFE Package Code Type 2SD1781K hFE QR Basic ordering unit (pieces) Taping T146 3000 hFE values are classified as follows : Item hFE Q 120 to 270 R 180 to 390 Electrical characteristic curves 1000 500 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Ta=25°C VCE=6V 400 Tc=25°C 1mA 900μA 800μA 700μA 600μA 500μA 400μA 300μA 200μA 100μA IB=0μA 8 10 1000 500 VCE=5V Ta=100°C 100 50 20 10 5 2 1 0.5 0.2 0.1 0 300 DC CURRENT GAIN : hFE 200 200 100 50 25°C −55°C 200 100 20 10 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 2 4 6 2 5 10 20 50 100 200 500 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current Rev.A 2/3 2SD1781K Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1000 500 200 100 50 20 10 5 1 2 5 10 20 IC/IB=50 20 10 500 TRANSITION FREQUENCY : fT (MHz) Ta=25°C 1000 lC/lB=10 1000 500 Ta=25°C VCE=5V 200 100 50 20 10 5 1 2 5 10 20 50 100 200 500 1000 Ta=100°C 25°C −55°C 200 100 50 20 10 −1 −2 −5 −10 −20 −50 −100 −200 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ) Fig.5 Collector-emitter saturation voltage vs. collector current ( Fig.6 ) Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 100 50 Ta=25°C f=1MHz IE=0A 200 100 50 Ta=25°C f=1MHz IC=0A 20 10 20 10 5 0.1 0.2 0.5 1.0 2.0 5.0 10 5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Fig.8 Emitter input capacitance vs. emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1