2SD1834

Medium Power Transistor (60V, 1A) 2SD1834 Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. Dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 Inner circuit C (1)Base (2)Collector (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 B (3)Emitter B : Base C : Collector E : Emitter E Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 60 60 7 1 2 0.5 2 150 Unit V V V A(DC) A(Pulse) ∗2 ∗1 ∗3 W −55 to +150 °C °C ∗1 Single pulse Pw=100ms ∗2 RBE=0Ω ∗3 Mounted on a 40× 40× t 0.7mm ceramic substrate Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 60 7 − − 2000 − − − Typ. − − − − − − 0.9 150 7 Max. − − − 1 1 − 1.5 − − Unit V V V μA μA − V MHz pF Conditions IC=50μA IC=100μA , RBE=0Ω IE=50μA VCB=60V VEB=6V VCE/IC=3V/500mA IC/IB=500mA/500μA VCE=5V , IE= −10mA , f=100MHz VCE=10V , IE=0A , f=1MHz ∗ ∗ Measured using pulse current. www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 1/2 2010.02 - Rev.B 2SD1834  Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) ∗Denotes hFE Data Sheet 2SD1834 MPT3 2k~ DE∗ T100 1000 Electrical characteristics curves 0.5 COLLECTOR CURRENT : IC (A) Ta=25°C PC=0.5W 1 COLLECTOR CURRENT : IC (A) 0.4 0.3 0.2 0.1 0.05 DC CURRENT GAIN : hFE 10μA 9μA 8μA 7μA 6μA 5μA 4μA 3μA 2μA 1μA 0.5 Ta=25°C VCE=3V 500k 200k 100k 50k 20k 10k 5k 2k 1k Ta=25°C 0.2 VCE=5V 3V 0.1 0.02 0.01 0 IB=0μA 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10 5 Ta=25°C 50 20 10 5 COLLECTOR CURRENT : IC (A) Ta=25°C f=1MHz IE=0A 2 Ic Max Pulse 1 0.5 Ic Max s 0m s =1 m Pw 00 =1 Pw 2 IC/IB=1000 DC 1 0.5 500 0.2 0.1 Ta=25°C 0.05 ∗Single nonrepetitive pulse 0.5 1 2 5 10 20 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 2 1 0.5 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB(V) 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 COLLECTOR CURRENT : IC (A) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Collector output capacitance vs. collector-base voltage Fig.6 Safe operating area www.rohm.com c ○ 2010 ROHM Co., Ltd. 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