2SD1857_09

Power Transistor (120V, 2A) 2SD1857 Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. Dimensions (Unit : mm) 2SD1857 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) 1.05 14.5 4.4 0.45 ROHM : ATV Taping specifications (1) Emitter (2) Collector (3) Base Packaging specifications and hFE Package Type hFE 2SD1857 QR Code Basic ordering unit (pieces) Taping TV2 2500 hFE values are classified as follows: Item hFE Q 120 to 270 R 180 to 390 Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 120 120 5 2 Unit V V V A A W °C °C ∗1 ∗2 3 1 150 −55 to +150 ∗1 ∗2 Single pulse Pw = 10ms When mounted on 1.7mm thick PCB having collector foll dimensions 1cm2 or more. Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 120 120 5 − − − 120 − − Typ. − − − − − − − 80 20 Max. − − − 1 1 2 390 − − Unit V V V μA μA V − MHz pF IC = 50μA IC = 1mA IE = 50μA VCB = 100V VEB = 4V IC/IB = 1A/0.1A VCE/IC = 5V/0.1A VCE = 5V , IE = −0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz Conditions ∗ ∗ ∗ Measured using pulse current. www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/2 2009.12 - Rev.E 2SD1857 Electrical characteristics curves 1.0 COLLECTOR CURRENT : IC (A) Data Sheet Ta=25°C 10 1000 VCE=5V DC CURRENT GAIN : hFE 0.8 COLLECTOR CURRENT : IC (A) 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 5 2 1 0.5 500 200 100 50 Ta=25°C VCE=10V 0.6 0°C 25°C 5V 20 10 5 2 0.1 0.05 0.02 0.2 1mA IB=0mA 0 1 2 3 4 5 0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Ta=10 0.4 0.2 −25°C 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current ( ) 500 VCE=5V Ta=100°C 25°C −25°C Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 10 5 2 1 0.5 0.2 0.1 0.05 10 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 IC/IB=5V 10 5 2 1 0.5 VBE(sat) 0.2 0.1 0.05 0.02 0.01 0.01 0.02 VCE(sat) 25°C 0.05 0.1 0.2 0.5 1 2 IC/IB=10 DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 Ta= −25°C 25°C Ta=100°C −25°C 100°C 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 5 10 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 Collector-emitter saturation voltage vs. collector current Fig.6 Collector-emitter saturation Base-emitter saturation vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 TRANSITION FREQUENCY : fT (MHz) 500 200 100 50 20 10 5 2 1 −1 −2 −5 −10 −20 Ta=25°C VCE=5V 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Ta=25°C f=1MHz IE=0A 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 IC Max(PULSE∗) Ta=25°C ∗Single nonrepetitive pulse Pw =1 0m 10 0m DC s∗ s∗ −50 −100 −200 −500 −1000 EMITTER CURRENT : IE (mA) 10 20 50 100 0.002 0.001 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Gain bandwidth product vs. emitter current Fig.8 Collector output capacitance vs. collector-base voltage Fig.9 Safe operating area www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/2 2009.12 - Rev.E Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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