2SD1759 / 2SD1861
Transistors
Power transistor (40V, 2A)
2SD1759 / 2SD1861
zExternal dimensions (Unit : mm)
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SB1183 / 2SB1239.
5.1
6.5
0.65
0.5
2.3
1.0
0.5
0.8Min.
C0.5
1.5
2.3
0.9
2.3
(3) (2) (1)
1.5
5.5
0.9
zEquivalent circuit
C
0.75
2SD1759
2.5
9.5
B
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
RBE
4kΩ
C : Collector
B : Base
E : Emitter
2SD1861
E
2.5
Parameter
Symbol
Limits
VCBO
VCER
40
40
VEBO
IC
5
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
1
2SD1861
2SD1759
Junction temperature
Storage temperature
PC
1
Tj
10
150
−55 to +150
Tstg
Unit
1.0
0.65Max.
V
V(RBE=10kΩ)
V
A(DC)
0.5
(1) (2) (3)
2.54 2.54
∗
4.4
zAbsolute maximum ratings (Ta=25°C)
14.5
0.9
6.8
1.05
W
W(TC=25°C)
°C
°C
0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
∗ Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SD1759
CPT3
1k to 200k
TL
2500
2SD1861
ATV
1k to
TV2
2500
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SD1759
2SD1861
Transition frequency
Output capacitance
Symbol
Min.
40
40
Typ.
BVCBO
BVCER
−
−
Max.
−
−
Unit
V
V
BVEBO
5
IE=50µA
−
−
−
1000
−
1
1
V
ICBO
−
−
−
VCB=24V
0.8
−
1.5
µA
µA
V
20000
−
IEBO
VCE(sat)
hFE
fT
Cob
1000
−
−
−
−
−
150
11
−
−
MHz
pF
Conditions
IC=50µA
IC=1mA , RBE=10kΩ
VEB=4V
IC/IB=0.6A/1.2mA
VCE/IC=3V/0.5A
VCE=6V , IE= −0.1A , f=100MHz
VCB=10V , IE=0A , f=1MHz
Rev.A
1/2
2SD1759 / 2SD1861
Transistors
zElectrical characteristics curves
2000
90µA
80µA
70µA
0.8
60µA
0.6
50µA
0.4
30µA
0.2
10µA
40µA
20µA
IB= 0µA
0
0
1
2
3
4
500
200
100
50
20
10
5
0
2.0
1.0
0.5
0.2
1
2
5 10 20
50 100 200
500 1000 2000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
10000
5000
1V
0.4
0.8
1.2
1.6
2.0
2.4 2.8
3.2 3.6
4.0
1
2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristics
COLLECTOR OUTPUT CAPACITANCE :Cob (pF)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
5.0
VCE=3V
20000
2000
2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Ta=25°C
IC/IB=1000
Ta=25°C
50000
1
5
Fig.1 Ground emitter output characteristics
Ta=25°C
VCE= 3V
1000
DC CURRENT GAIN : hFE
A
50
f=1MHz
IC=0A
Ta=25°C
20
10
5
2
1
0.1 0.2
0.5
1
2
5
10 20
50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.5 Colletor output capacitance
vs. collector-base voltage
5
10 20
50 100 200
500 1000 2000
5000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current
50
EMITTER INPUT CAPACITANCE :Cib (pF)
100µ
Ta=25°C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (A)
1.0
f=1MHz
IC=0A
Ta=25°C
20
10
5
2
1
0.1 0.2
0.5
1
2
5
10 20
50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.6 Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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