2SD1863

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 Dimensions (Unit : mm) 2SD1898 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 +0.2 1.5 −0.1 4.0±0.3 2.5+0.2 −0.1 (1) 1.0±0.2 (2) (3) 0.4±0.1 1.5±0.1 +0.1 0.4−0.05 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 Structure Epitaxial planer type NPN silicon transistor ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol : DF (1) Base (2) Collector (3) Emitter 2SD1733 1.5±0.3 2SD1768S 4±0.2 2±0.2 3±0.2 5.5+0.3 −0.1 9.5±0.5 (15Min.) 0.9 1.5 0.75 0.9 0.65±0.1 2.5 0.45+0.15 −0.05 3Min. 6.5±0.2 5.1+0.2 −0.1 C0.5 2.3+0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 5 2.5 +0.4 −0.1 0.5 +0.15 0.45 −0.05 (1) (2) (3) (1) (2) (3) Taping specifications ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base 2SD1863 6.8±0.2 2.5±0.2 0.65Max. 1.0 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 Taping specifications (1) Emitter (2) Collector (3) Base ROHM : ATV www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 14.5±0.5 4.4±0.2 0.9 1/3 2009.12 - Rev.C 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 120 80 5 1 2 2SD1898 Collector power dissipation 0.5 2 PC 1 10 0.3 1 Tj Tstg 150 −55 to +150 Unit V V V A (DC) A (Pulse) ∗1 W W W W (Tc=25°C) W W °C °C ∗2 ∗3 Data Sheet 2SD1733 2SD1768S 2SD1863 Junction temperature Storage temperature ∗1 Pw=20ms, duty=1 / 2 ∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger. ∗3 When mounted on a 40×40×0.7mm ceramic board. Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current 2SD1863 DC current 2SD1733, 2SD1898 transfer ratio 2SD1768S Collector-emitter saturation voltage Transition frequency Output capacitance ∗ Measured using pulse current Symbol BVCBO BVCEO BVEBO ICBO IEBO Min. 120 80 5 − − 120 120 120 Typ. − − − − − − − − 0.15 100 20 Max. − − − 1 1 390 390 390 0.4 − − Unit V V V μA μA − − − V MHz pF IC=50μA IC=1mA IE=50μA VCB=100V VEB=4V Conditions hFE ∗ VCE=3V, IC=0.5A VCE(sat) fT Cob − − − IC/IB=500mA/20mA VCE=10V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz Packaging specifications and hFE Package Code Type 2SD1898 2SD1733 2SD1768S 2SD1863 hFE QR QR QR QR − − − − − − Basic ordering unit (pieces) T100 1000 Taping TL 2500 − TP 5000 − − TV2 2500 − − − hFE values are classified as follows : Item hFE Q 120 to 270 R 180 to 390 www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.C 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Electrical characteristic curves 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (A) Data Sheet Ta=25°C VCE=5V Ta=25°C 1.0 0.8 0.6 0.4 1mA 0.2 0 0 IB=0mA 10 0 0 Ta=25°C 6mA 5mA 4mA 3mA 2mA DC CURRENT GAIN : hFE 100 1000 VCE=3V 1V 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 BASE TO EMITTER VOLTAGE : VBE (V) 2 4 6 8 10 100 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fT (MHz) 500 200 100 50 20 10 5 2 1 2 5 10 20 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0 10 100 1000 IC/IB=20/1 10/1 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C Ta=25°C VCE=5V 1000 Ta=25°C f=1MHz IE=0A Ic=0A 100 10 50 100 200 500 1000 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : −IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Gain bandwidth product vs. emitter current Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 10 5 COLLECTOR CURRENT : IC (A) 2 1 500m 200m 100m 50m 20m 10m 5m COLLECTOR CURRENT : IC (A) Ic Max (Pulse) DC Ta=25°C Single non-repetitive pulse 10 5 2 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 0.1 0.2 0.5 1 Ic Max (Pulse) DC Ta=25°C Single non-repetitive pulse Pw =1 0m S m S 00 Pw =1 Pw =1 S 0m 00 m S Pw =1 2m 1m 0.1 0.2 0.5 1 2 5 10 20 50100 200 5001000 2 5 10 20 50100200 500 0 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Safe operating area (2SD1863) Fig.8 Safe operating area (2SD1898) www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.12 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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