2SD1867

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. !External dimensions (Units : mm) 2SD2195 1.0 1.5 0.4 4.0 2.5 0.5 (1) 3.0 0.5 (3) 4.5 1.6 (2) (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 1.5 0.4 !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD2195 Collector power dissipation 2SD1980 2SD1867 2SD2398 Junction temperature Storage temperature ROHM : MPT3 EIAJ : SC-62 Unit V V V A(DC) A(Pulse) ∗1 W ∗2 W(Tc=25°C) W ∗3 1.0 0.5 Symbol VCBO VCEO VEBO IC (3) (2) (1) 2.3 Limits 100 100 6 2 3 2 1 10 1 2 20 150 −55 ∼ +150 2SD1980 0.75 0.4 5.5 1.5 0.9 0.9 0.65 2.3 PC 5.1 6.5 C0.5 1.5 0.5 1.5 2.5 9.5 Tj Tstg °C °C ∗ 1 Single pulse Pw=100ms ∗ 2 When mounted on a 40 x 40 x 0.7 mm ceramic board. ∗ 3 Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger. ROHM : CPT3 EIAJ : SC-63 2SD1867 2.3 W(Tc=25°C) 0.8Min. (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 6.8 2.5 !Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) ∗ Denotes hFE 2SD2195 2SD1980 2SD1867 2SD2398 MPT3 CPT3 ATV TO-220FN 1k ∼ 10k 1k ∼ 10k 1k ∼ 10k 1k ∼ 10k DP ∗ − − − T100 TL TV2 − 1000 2500 2500 500 0.65Max. 1.0 0.9 0.5 (1) (2) (3) 2.54 2.54 14.5 4.4 ROHM : ATV 1.05 0.45 Taping specifications (1) Emitter (2) Collector (3) Base !Circuit schematic C 2SD2398 10.0 4.5 φ 3.2 2.8 15.0 12.0 8.0 5.0 14.0 B 1.2 1.3 0.8 R1 R1 3.5kΩ R2 300Ω R2 E B : Base C : Collector E : Emitter 2.54 2.54 (1) (2) (3) (1) (2) (3) 0.75 2.6 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) ROHM : TO-220FN !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance ∗ Measured using pulse current. Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE Cob Min. 100 100 − − − 1000 − Typ. − − − − − − 25 Max. − − 10 3 1.5 10000 − Unit V V µA mA V − pF Conditions IC = 50µA IC = 5mA VCB = 100V VEB = 5V IC = 1A , IB = 1mA VCE = 2V , IC = 1A VCB = 10V , IE = 0A , f = 1MHz ∗ ∗