2SD1918TLQ

2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A zExternal dimensions (Unit : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1275 / 2SB1236A. 1.5 1.5 0.4 (3) (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 0.4 ROHM : MPT3 EIAJ : SC-62 zAbsolute maximum ratings (Ta = 25°C) Symbol Limits Unit VCBO VCEO 160 160 V V VEBO 5 1.5 3 V A(DC) A(Pulse) ∗1 1 W ∗2 0.5 2 W W ∗3 1 10 W W(Tc=25°C) PC 2SD1918 Junction temperature Tj 150 °C Storage temperature Tstg −55 ∼+150 °C 0.75 0.9 5.1 6.5 2.3 1.5 0.65 0.9 0.8Min. C0.5 1.5 0.5 2SD2211 5.5 2.3 Collector power dissipation (3) (2) (1) IC 2SD1857A 2.3 Collector current 2SD1918 1.0 0.5 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage 2.5 9.5 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) ROHM : CPT3 EIAJ : SC-63 ∗ 1 Pw=200msec duty=1/2 ∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. ∗ 3 When mounted on a 40 x 40 x 0.7mm ceramic board. 2SD1857A 6.8 1.0 0.65Max. zPackaging specifications and hFE 0.5 4.4 14.5 0.9 2.5 (1) (2) (3) Type 2SD2211 2SD1918 2SD1857A Package hFE Marking MPT3 QR DQ* CPT3 QR ATV PQ − − T100 1000 TL 2500 TV2 2500 Code Basic ordering unit (pieces) 2.54 2.54 1.05 0.45 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base * Denotes hFE zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 160 − − V IC = 50µA Collector-emitter breakdown voltage BVCEO 160 − − V IC = 1mA Emitter-base breakdown voltage BVEBO 5 − − V IE = 50µA Collector cutoff current ICBO − − 1 µA VCB = 120V Emitter cutoff current IEBO − − 1 µA VEB = 4V Collector-emitter saturation voltage VCE(sat) − − 2 V IC/IB = 1A/0.1A ∗ Base-emitter saturation voltage VBE(sat) − − 1.5 V IC/IB = 1A/0.1A ∗ 120 − 390 − DC current 2SD2211,2SD1918 transfer ratio 2SD1857A hFE 82 − 270 − Transition frequency fT − 80 − MHz Output capacitance Cob − 20 − pF Conditions VCE/IC = 5V/0.1A VCE = 5V , IE = −0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz ∗ Measured using pulse current. Rev.A 1/3 2SD2211 / 2SD1918 / 2SD1857A Transistors zElectrical characteristic curves COLLECTOR CURRENT : IC (A) A 10m COLLECTOR CURRENT : IC (A) 1000 10 Ta=25°C 9mA 8mA 7mA 6mA 0.8 0.6 5mA 4mA 0.4 3mA 2mA 0.2 IB=1mA 500 2 1 Ta=100°C 0.5 Ta=25°C Ta= −25°C 0.2 0.1 0.05 200 0 1 2 3 4 0.01 5 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 5 1 0.01 1.8 50 25°C −25°C 20 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 Ta=25°C 5 2 1 0.5 0.2 IC/IB=20 0.1 0.05 0.02 0.01 0.01 0.02 1 VBE(sat) EMITTER CURRENT : IE (mA) Fig.7 Gain bandwidth products vs. emitter current 10 100°C 0.1 −25°C 0.02 VCE(sat) 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 Ta=25°C f=1MHz IE=0A 500 5 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 5 10 Fig.6 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage 10 1000 2 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 25°C 0.2 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Collector output capacitance vs. collector-base voltage Ic Max (Pulse∗) 2 1 500m 200m 100m 50m Ta=25°C ∗Single nonrepetitive pulse s∗ −500 −1000 Ta= −25°C 0.5 s∗ 2 −100 −200 2 m 00 5 −50 5 10 IC/IB=10 0m =1 10 −20 2 5 C D 20 −10 1 2 Pw 50 −5 0.5 1 5 =1 100 −2 0.2 0.5 Pw TRANSITION FREQUENCY : fT (MHz) Ta=25°C VCE=5V 200 1 −1 0.1 0.2 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ΙΙ ) 500 0.05 0.1 0.05 10 COLLECTOR CURRENT : IC (A) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) 100 10 0.05 Fig.3 DC current gain vs. collector current ( Ι ) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE Ta=100°C 200 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=5V 0.02 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics 500 5V 20 2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 VCE=10V 100 0.02 0 Ta=25°C VCE=5V 5 DC CURRENT GAIN : hFE 1.0 20m 10m 5m 2m 1m Recommended land 0.1 0.2 0.5 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SD2211) Rev.A 2/3 2SD2211 / 2SD1918 / 2SD1857A Transistors 10 Ta=25°C ∗Single nonrepetitive pulse Ic Max (Pulse∗) 2 = Pw m 10 1 s∗ 0m 10 C D 200m 100m 50m s∗ 500m = Pw COLLECTOR CURRENT : IC (A) 5 20m 10m 5m 2m 1m 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SD1918) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1