2SD1949_11

Data Sheet Medium Power Transistor (50V,0.5A) 2SD1949 / 2SD1484K 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70) (1) Emitter (2) Bace (3) Collector Absolute maximum rationgs (Ta=25 C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 50 50 5 0.5 0.2 150 −55 to +150 Unit V V V A W C C SMT3 (SC-59) 2.9 0.4 (3) 1.1 0.8 (2) (1) 1.6 2.8 0.95 0.95 0.15 (1) Emitter (2) Bace (3) Collector 1.9 Electrical characteristics (Ta=25 C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector outoff current Emitter cutoff current DC current rransfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 50 50 5 − − 120 − − − Typ. − − − − − − − 250 6.5 Max. − − − 0.5 0.5 390 0.4 − − Unit V V V µA µA − V MHz pF IC=100µA IC=1mA IE=100µA Conditions VCB=30V VEB=4V VCB=10V , IE=0A , f=1MHz IC/IB=150mA/15mA VCE=5V , IE= −20mA , f=100MHz VCE/IC=3V/10mA Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pleces) Danotes hFE 2SD1949 UMT3 QR Y T106 3000 2SD1484K SMT3 QR Y T146 3000 hFE values are classified as follows : Item hFE Q 120 to 270 R 180 to 390 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev. E 0.3Min. 2SD1949 / 2SD1484K 2SD1484K Data Sheet Electrical characteristic curves 200 VCE=6V 100 COLLECTOR CURRENT : IC (mA) 0.50 VCE=6V 0.45 0.40 0.35 1000 500 DC CURRENT GAIN hFE Ta=25 C COLLECTOR CURRENT : IC (mA) 100 50 20 10 C 80 60 0.30 0.25 200 1V VCE=3V 25 C Ta=100 -25 C 5 2 1 0.5 0.2 0.1 0 0.2 40 0.20 0.15 100 20 0.10 0.05 IB=0mA 50 0.4 0.6 0.8 1.0 1.2 0 0 1 2 3 4 5 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 BASE TO VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT IC (mA) Fig.1 Ground emitter propagation characteristics Fig.2 Ground emitter output characteristics Fig.3 DC current gain vs. Collector current ( ) 1000 500 DC CURRENT GAIN hFE Ta=75 C 25 C VCE=10V COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=25 C 0.5 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 0.5 IC/IB=10 0.2 100/1 IC/IB= 50/1 200 -25 C 0.2 0.1 100 0.1 50 0.05 20/1 0.05 25 C Ta=75 C -25 C 10/1 20 1 2 5 10 20 50 100 200 500 1000 0.02 5 10 20 50 100 200 500 0.02 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Fig.4 DC current gain vs. Collector currnet ( ) Fig.5 Collector-emitter saturation voltage vs. Collector current Fig.6 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 50 Cib Ta=25 C f=1MHz IE=0A Ta=25 C 500 TRANSITION FREQUENCY : fT (MHZ) VCE=6V 20 Cob 10 200 5 100 0.1 0.2 0.5 1 2 5 10 20 -1 -2 -5 -10 -20 -50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.7 Input-and-output capacity vs.voltage characteristic Fig.8 Transition frequency vs.emitter current www.rohm.com © 2011 ROHM Co., Ltd. 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