2SD2114K

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) External dimensions (Unit : mm) 2SD2114K 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) 1.1+0.2 −0.1 0.8±0.1 (3) 0.4 +0.1 −0.05 1.6+0.2 −0.1 2.8±0.2 0∼0.1 All terminals have same dimensions 0.3∼0.6 +0.1 0.15 −0.06 ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol: BB ∗ (1) Emitter (2) Base (3) Collector 3±0.2 Structure Epitaxial planar type NPN silicon transistor 2SD2144S 4±0.2 2±0.2 (15Min.) 0.45+0.15 −0.05 3Min. 2.5 +0.4 −0.1 5 0.5 +0.15 0.45 −0.05 (1) (2) (3) ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base ∗ Denotes h FE Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SD2114K dissipation 2SD2144S Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Limits 25 20 12 0.5 1 0.2 0.3 150 −55 to +150 Unit V V V A(DC) A(Pulse) W °C °C ∗ PC Tj Tstg ∗ Single pulse Pw=100ms Rev.B 1/4 2SD2114K / 2SD2144S Transistors Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output On-resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT∗ Cob Ron Min. 25 20 12 − − − 820 − − − Typ. − − − − − 0.18 − 350 8.0 0.8 Max. − − − 0.5 0.5 0.4 2700 − − − Unit V V V µA µA V − MHz pF Ω IC=10µA IC=1mA IE=10µA VCB=20V VEB=10V Conditions IC/IB=500mA/20mA VCE=3V, IC=10mA VCE=10V, IE= −50mA, f=100MHz VCB=10V, IE=0A, f=1MHz IB=1mA, Vi=100mV(rms), f=1kHz ∗ Measured using pulse current Packaging specifications and hFE Package Code Type 2SD2114K 2SD2144S hFE VW VW − Basic ordering unit (pieces) Taping T146 3000 TP 5000 − hFE values are classified as follows : Item hFE V W 820 to 1800 1200 to 2700 Electrical characteristic curves 2.0 Ta=25°C 2.0µA 1.8µA 1000 COLLECTOR CURRENT : IC (mA) 1.6µA 1.4µA 1.2µA COLLECTOR CURRENT : IC (mA) 1.6 800 1.2mA 1.0mA COLLECTOR CURRENT : IC (mA) 1.8mA 2.0mA 1.6mA 1.4mA 1000 500 200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 VCE=3V Measured using pulse current. 1.2 1.0µA 0.8µA 600 0.8mA 0.6mA Ta=100°C 25°C −25°C 0.8 400 0.6µA 0.4µA 0.2µA 0.4mA 0.2mA 0.4 200 0 0 IB=0 0.1 0.2 0.3 0.4 0.5 0 0 2 Ta=25°C Measured using IB=0mA pulse current. 4 6 8 10 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output characteristics ( ) Fig.2 Grounded emitter output characteristics ( ) Fig.3 Grounded emitter propagation characteristics Rev.B 2/4 2SD2114K / 2SD2144S Transistors 10000 5000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) DC CURRENT GAIN : hFE 2000 1000 500 200 100 50 20 10 1 2 5 10 20 DC CURRENT GAIN : hFE Ta=25°C Measured using pulse current. VCE=5V 10000 5000 2000 1000 500 200 100 50 20 Ta=100°C 25°C −25°C VCE=3V Measured using pulse current. 2000 1000 500 200 100 50 20 10 5 2 1 2 5 10 2 0 IC/IB=100 50 25 10 Ta=25°C Measured using pulse current. 3V 1V 50 100 200 500 1000 10 1 2 5 10 2 0 5 0 100 200 500 1000 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1000 500 200 100 50 20 10 5 2 1 2 5 10 20 Ta=100°C 25°C −25°C IC/IB=25 Measured using pulse current. 10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 IC/IB=10 25 50 100 BASE SATURATION VOLTAGE : VBE(sat) (mV) 2000 BASE SATURATION VOLTAGE : VBE(sat) (mV) Ta=25°C Pulsed 10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 Ta=−25°C 25°C 100°C lC/lB=10 Measured using pulse current. 50 100 200 500 1000 50 100 200 500 1000 5 0 1 0 0 2 00 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Base-emitter saturation voltage vs. collector current ( ) Fig.9 Base-emitter saturation voltage vs. collector current ( ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10000 TRANSITION FREQUENCY : fT (MHz) 5000 2000 1000 500 200 100 50 20 10 −1 −2 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 ON RESISTANCE : Ron (Ω) Ta=25°C VCE=10V Measured using pulse current. 1000 500 Ta=25°C f=1MHz IE=0A 100 50 20 10 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 Ta=25°C f=1kHz Vi=100mV(rms) RL=1kΩ −5 −10 −20 −50 −100 −200 −500 −1000 EMITTER CURRENT : IE (mA) 1 2 5 10 COLLECTOR TO BASE VOLTAGE : VCB (V) BASE CURRENT : IB (mA) Fig.10 Gain bandwidth product vs. emitter current Fig.11 Collector output capacitance vs. collector-base voltage Fig.12 Output-on resistance vs. base current Rev.B 3/4 2SD2114K / 2SD2144S Transistors Ron measurement circuit RL=1kΩ Input vi 1kHz 100mV(rms) IB V Output v0 Ron= v0 vi−v0 ×RL Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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