2SD2118

2SD2098 / 2SD2118 / 2SD2097 Transistors Low VCE(sat) transistor (strobe flash) 2SD2098 / 2SD2118 / 2SD2097 Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326. External dimensions (Unit : mm) 2SD2098 0.5±0.1 4.5 +0.2 −0.1 1.6±0.1 1.5 +0.2 −0.1 2.5 +0.2 −0.1 4.0±0.3 (1) (2) (3) 0.4±0.1 1.5±0.1 1.0±0.2 0.4+0.1 −0.05 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 Structure Epitaxial planar type NPN silicon transistor Abbreviated symbol : DJ∗ ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter 2SD2118 1.5±0.3 6.5±0.2 5.1+0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 5.5 +0.3 −0.1 0.75 0.9 0.65±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SD2097 6.8±0.2 2.5±0.2 0.65Max. 1.0 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 14.5±0.5 4.4±0.2 0.9 0.45±0.1 ROHM : ATV (1) Emitter (2) Collector (3) Base ∗ Denotes hFE Rev.A 2.5 9.5±0.5 0.9 1.5 1/4 2SD2098 / 2SD2118 / 2SD2097 Transistors Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP 2SD2098 Collector power dissipation PC Limits 50 20 6 5 10 0.5 2 2SD2118 2SD2097 Junction temperature Storage temperature Tj Tstg 1 10 1 150 −55 to +150 W(Tc=25°C) W °C °C ∗3 Unit V V V A(DC) A(Pulse) ∗1 W ∗2 ∗1 Single pulse Pw=10ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board glass epoxy board, 1.6 mm thick with copper plating 100mm2 or larger. Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 50 20 6 − − − 120 − − Typ. − − − − − 0.3 − 150 35 Max. − − − 0.5 0.5 1.0 390 − − Unit V V V µA µA V − MHz pF IC=50µA IC=1mA IE=50µA VCB=40V VEB=5V Conditions IC/IB=4A/0.1A VCE=2V, IC=0.5A VCE=6V, IE=−50mA, f=100MHz VCE=20V, IE=0A, f=1MHz ∗ ∗ Packaging specifications and hFE Package Code Type 2SD2098 2SD2118 2SD2097 hFE QR QR QR − − − Taping T100 1000 TL 2500 − TV2 2500 − − Basic ordering unit (pieces) hFE values are classified as follows : Item hFE Q 120 to 270 R 180 to 390 Rev.A 2/4 2SD2098 / 2SD2118 / 2SD2097 Transistors Electrical characteristic curves COLLECTOR CURRENT : IC (A) 10 5 VCE=2V Ta=100°C 25°C −25°C 5 50mA 45mA COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 4 Ta=25°C 30mA 25mA 20mA 15mA 40mA 35mA 10mA 5000 2000 1000 500 200 100 50 20 10 Ta=25°C VCE=5V 3 2V 1V 2 5mA 1 IB=0mA 1.6 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 0.4 0.8 1.2 5 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current ( Ι ) 5000 2000 DC CURRENT GAIN : hFE VCE=1V 5000 2000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=2V 2 1 0.5 Ta=25°C DC CURRENT GAIN : hFE 1000 500 200 100 50 20 10 Ta=100°C 25°C −25°C 1000 500 200 100 50 20 10 Ta=100°C 25°C −25°C 0.2 0.1 0.05 0.02 IC/IB=50 40 30 10 5 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 5 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ΙΙ ) Fig.5 DC current gain vs. collector current ( ΙΙΙ ) Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 1 0.5 lC/lB=10 lC/lB=30 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 1 0.5 2 1 0.5 0.2 0.1 0.05 0.02 lC/lB=40 0.2 0.1 0.05 Ta=100°C 25°C −25°C 0.2 0.1 0.05 0.02 Ta=100°C 25°C −25°C Ta=100°C 25°C −25°C 0.02 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Fig.8 Collector-emitter saturation voltage vs. collector current ( ΙΙΙ ) Fig.9 Collector-emitter saturation voltage vs. collector current (IV) Rev.A 3/4 2SD2098 / 2SD2118 / 2SD2097 Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 1 0.5 TRANSITION FREQUENCY : fT (MHz) lC/lB=50 1000 500 200 100 50 20 10 5 2 Ta=25°C VCE=6V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 1000 500 Ta=25°C f=1MHz IC=0A IE=0A Cib 0.2 0.1 0.05 0.02 Ta=100°C 25°C −25°C 200 100 50 Cob 20 10 0.1 0.2 0.01 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 1 −1m −2m −5m−10m −20m −50m −0.1 −0.2 −0.5 −1 EMITTER CURRENT : IE (A) 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector-emitter saturation voltage vs. collector current (V) Fig.11 Gain bandwidth product vs. emitter current Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 50 COLLECTOR CURRENT : IC (A) 20 10 5 2 1 500m 200m 100m 50m 20m 10m Pw =1 0 COLLECTOR CURRENT : IC (A) Ic max (Pulse) Pw Ta=25(°C) Single pulse Recommended land pattern 50 20 10 5 2 1 500m 200m 100m 50m 20m 10m Ic max (Pulse) Ta=25 (°C) Single pulse 0m µs 00 =1 s Pw m =1 s Pw 10m = Pw 0m =1 s Ic max (Pulse) Pw 00 =1 s D C ms 0.2 0.5 1 2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.13 Safe operating area (2SD2098) DC 5 10 20 50 100 200 500 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.14 Safe operating area (2SD2118) Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1