2SD2118_09

Low VCE(sat) transistor (strobe flash) 2SD2118 Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. Structure Epitaxial planar type NPN silicon transistor ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter Dimensions (Unit : mm) 2SD2118 ∗ Denotes hFE Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC ICP 2SD2118 PC Tj Tstg Limits 50 20 6 5 10 1 10 150 −55 to +150 Unit V V V A(DC) A(Pulse) W W(Tc=25°C) °C °C ∗1 Junction temperature Storage temperature ∗1 Single pulse Pw=10ms Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 50 20 6 − − − 120 − − Typ. − − − − − 0.3 − 150 35 Max. − − − 0.5 0.5 1.0 390 − − Unit V V V µA µA V − MHz pF IC=50µA IC=1mA IE=50µA VCB=40V VEB=5V Conditions IC/IB=4A/0.1A VCE=2V, IC=0.5A VCE=6V, IE=−50mA, f=100MHz VCE=20V, IE=0A, f=1MHz ∗ ∗ www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.11 - Rev.C 2SD2118 Packaging specifications and hFE Package Code Type 2SD2118 hFE QR Basic ordering unit (pieces) Taping TL 2500 Data Sheet hFE values are classified as follows : Item hFE Q 120 to 270 R 180 to 390 Electrical characteristic curves COLLECTOR CURRENT : IC (A) 10 5 VCE=2V Ta=100°C 25°C −25°C 5 50mA 45mA COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 4 Ta=25°C 30mA 25mA 20mA 15mA 40mA 35mA 10mA 5000 2000 1000 500 200 100 50 20 10 Ta=25°C VCE=5V 2V 1V 3 2 5mA 1 IB=0mA 1.6 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 0.4 0.8 1.2 5 1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current ( Ι ) 5000 2000 DC CURRENT GAIN : hFE VCE=1V DC CURRENT GAIN : hFE 5000 2000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=2V Ta=100°C 25°C −25°C 2 1 0.5 Ta=25°C 1000 500 200 100 50 20 10 Ta=100°C 25°C −25°C 1000 500 200 100 50 20 10 0.2 0.1 0.05 0.02 IC/IB=50 40 30 10 5 1m 2m 5m 0.010.02 0.05 0.10.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 5 1m 2m 5m0.010.02 0.050.10.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ΙΙ ) Fig.5 DC current gain vs. collector current ( ΙΙΙ ) Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 1 0.5 Ta=100°C 25°C −25°C 2 1 0.5 Ta=100°C 25°C −25°C lC/lB=10 lC/lB=30 2 1 0.5 0.2 0.1 0.05 0.02 Ta=100°C 25°C −25°C lC/lB=40 0.2 0.1 0.05 0.2 0.1 0.05 0.02 0.02 0.01 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Fig.8 Collector-emitter saturation voltage vs. collector current ( ΙΙΙ ) Fig.9 Collector-emitter saturation voltage vs. collector current (IV) www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.11 - Rev.C 2SD2118 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Data Sheet COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 1 0.5 Ta=100°C 25°C −25°C TRANSITION FREQUENCY : fT (MHz) lC/lB=50 1000 500 200 100 50 20 10 5 2 Ta=25°C VCE=6V 1000 500 Ta=25°C f=1MHz IC=0A IE=0A Cib 200 100 50 0.2 0.1 0.05 0.02 Cob 20 10 0.1 0.2 0.01 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 1 −1m −2m −5m−10m −20m −50m −0.1 −0.2 −0.5 −1 EMITTER CURRENT : IE (A) 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector-emitter saturation voltage vs. collector current (V) Fig.11 Gain bandwidth product vs. emitter current Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 50 Ta=25 (°C) Single pulse Ic max (Pulse) COLLECTOR CURRENT : IC (A) 20 10 5 2 1 500m 200m 100m 50m 20m 10m Pw =1 0m s 00 ms Ic max (Pulse) Pw =1 0.2 0.5 1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.13 Safe operating area (2SD2118) www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. D C 2 5 10 20 50 100 200 500 3/3 2009.11 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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