Medium Power Transistor (Motor, Relay drive) (6010V, 2A)
2SD2143
Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 60±10 60±10 6 2 3 1 10 150 −55 to +150 Unit V V V A (DC) A (Pulse) W W (Tc=25°C)
°C °C
1.0 0.5
1.5 2.5 9.5
Dimensions (Unit : mm)
0.9 0.75
5.5 1.5
(1)
2.3
5.1
0.9
(3)
(2)
2.3
0.65
C0.5
0.5
0.8Min.
Collector current Collector power dissipation Junction temperature Storage temperature
∗1 Single pulse Pw=100ms
∗1
ROHM : CPT3 EIAJ : SC-63
Packaging specifications and hFE
Type
Package hFE
2SD2143 CPT3 1k to 10k − TL 2500
Marking
Code Basic ordering unit (pieces)
Inner circuit
C
B R1 E : Emitter B : Base C : Collector R1 R2 R2 E 3.5kΩ 300Ω
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio
Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE fT Cob
Min. 50 50 − − − 1000 − −
Typ. − − − − − − 80 25
Max. 70 70 1.0 3 1.5 10000 − −
Unit V V μA mA V − MHz pF IC=50μA IC=5mA VCB=40V VEB=5V IC/IB=1A/1mA
Conditions
2.3
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
6.5
∗
Transition frequency Output capacitance
∗ Measured using pulse current.
VCE=2V, IC=1A VCE=5V, IE= −0.1A, f=30MHz VCB=10V, IE=0A, f=1MHz
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1/2
2012.01 - Rev.C
2SD2143
Electrical characteristics curves
2.0 1.8
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)
A
Data Sheet
2.0
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
300
μA
A 250μ
25
0μ
COLLECTOR CURRENT : Ic (A)
500μA 450μA 400μA
Ta=25°C
1.8 450μA
400μA 1.6 350μA
500μA
30
0μ
A
Ta=25°C
5 2 1 0.5
VCE=2V
1.4 1.2 1.0 0.8 0.6 0.4 0.2
25˚C
0.05
0.01
1
2
3
4
5
0
2
4
6
8
10
0.001 0.5
1
1.5
−25˚ C
0.1
Ta= 100 ˚C
IB=2
00μA
20 IB=
0μA
0.2
2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Groundede emitter output characteristics ( Ι )
Fig.2 Grounded emitter output characteristics ( ΙΙ )
Fig.3 Grounded emitter propagation characteristics
10000 5000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
Ta=25°C VCE=4V
10000 5000
VCE=2V
100 50 20 10 5 2 1 0.5 0.2 0.01 0.1 0.2 0.5 1
IC/IB=1000
Ta=25°C
DC CURRENT GAIN : hFE
2000 1000 500 200 100 50 20 10 0.001 0.01 0.1 0.2 0.5 1 2 5 10
VCE=2V
DC CURRENT GAIN : hFE
2000 1000 500
=1
25°C
200 100 50 20 10 0.001
Ta 5° C
00 °C
500
−2
0.01
0.1 0.2 0.5 1 2
5 10
2
5 10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( Ι )
Fig.5 DC current gain vs. collector current ( ΙΙ )
Fig.6 Collector-emitter saturation voltage vs. collector current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
100
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
IC/IB=1000
200 100
COLLECTOR CURRENT : Ic (A)
50 20 10 5 2 1 0.5 0.2 0.01
Ta=25°C IE=0A f=1MHz
10 5 2 1 500m 200m 100m 50m 20m 10m 5m
Ta=25°C Single
Ic max (pulse)
DC
S m 00 =1 Pw
Pw= 1mS
50
Pw =1 0m S
Ta= −25°C 100°C
20
25°C
10 5 0.05 0.1 0.2
0.1 0.2 0.5 1
2
5 10
0.5
1
2
5
10 20
50
2m Nonrepetitive 1m Pulse 0.1 0.2 0.5 1 2
5 10 20
50 100 200 500 1000
COLLECTOR CURRENT : IC (A)
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Collector-emitter saturation voltage vs. collector current
Fig.8 Collector output capacitance vs. collector-base voltage
Fig.9 Safe operating area (A. S. O) 2SD2143 (CPT)
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c ○ 2012 ROHM Co., Ltd. All rights reserved.
2/2
2012.01 - Rev.C
Notice
Notes
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R1120A
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