2SD2153

High gain amplifier transistor (25V, 2A) 2SD2153 Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. Dimensions (Unit : mm) 4.0 1.0 2.5 0.5 1.5 0.4 (1) 1.6 3.0 0.5 (3) 4.5 (2) (1) Base (2) Collector (3) Emitter 1.5 0.4 ROHM : MPT3 EIAJ : SC-62 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature + + Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 30 25 6 2 3 0.5 2 150 −55 to +150 ∗2 Unit V V V A(DC) A(Pulse) W °C °C ∗1 ∗1 Single pulse, Pw=10ms ∗2 Mounted on a 40 40 t0.7mm Ceramic substrate Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) ∗ Denotes hFE 2SD2153 MPT3 UVW DN T100 1000 ∗ Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 25 6 − − − 820 − − Typ. − − − − − 0.12 − 110 22 Max. − − − 0.5 0.5 0.5 1800 − − Unit V V V μA μA V − MHz pF Conditions IC = 50μA IC = 1mA IE = 50μA VCB = 20V VEB = 5V IC/IB = 1A/20mA VCE/IC = 6V/0.5A VCE = 10V , IE = −10mA , f= 100MHz VCB = 10V , IE = 0A , f = 1MHz 0.4 ∗ www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1.5 1/2 2009.12 - Rev.B 2SD2153 Electrical characteristics curves 2 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 10mA 9mA 8mA 7mA 6mA 5mA Data Sheet 10 5 2 1 500m 200m 100m 50m 20m 10m 5m 2m 1m ∗ This data are made from repesentative value of specific lot. The data do not indicate the worst value or guaranteed value. And we can not guarantee the value based on the data. 10k 5k VCE=6V Ta=100 C 25 C −40 C 3mA DC CURRENT GAIN : hFE 4mA 2mA Ta=100 C 25 C −25 C 2k 1k 500 200 100 50 1 1B=1mA 0 0 1 2 0 500m 1 1.5 1m 10m 100m 1 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain 1 500m 1 500m IC/IB=10 TRANSITION FREQUENCY : fT(MHz) 10000 500 200 100 50 20 10 5 2 1 1 2 5 VCE=6V Ta=25 C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 200m 100m 50m 20m 10m 5m 2m 1m 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 5 IC/IB=50 40 30 10 200m 100m 50m 20m 10m 5m 2m 1m 1m 2m ∗ This data are made from repesentative value of specific lot. The data do not indicate the worst value or guaranteed value. And we can not guarantee the value based on the data. Ta=100 C 25 C −25 C ∗ This data are made from repesentative value of specific lot. The data do not indicate the worst value or guaranteed value. And we can not guarantee the value based on the data. 5m 10m 20m 50m 100m 200m 500m 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Collector-emitter saturation voltage vs. collector current Fig.6 Gain bandwith product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob(pF) COLLECTOR CURRENT : Ic (A) Ta=25°C f=1MHz Ic=0A EMITTER INPUT CAPACITANCE : Cib(pF) Ta=25°C f=1MHz Ic=0A 10 Ic max (Pulse) 1 PW=100ms PW=10ms 1000 500 200 100 50 20 10 0.1 0.2 0.5 1 2 5 10 20 50 100 1000 500 200 100 50 20 10 0.1 0.2 0.5 1 2 5 10 DC 0.1 0.01 Ta=25°C Single non repetitive pulse 0.001 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Collector output capacitance vs. collector-base voltage Fig.8 Emitter input capacitance vs. emitter-base voltage Fig.9 Safe operating area www.rohm.com c ○ 2009 ROHM Co., Ltd. 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