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2SD2537_1

2SD2537_1

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    2SD2537_1 - Medium Power Transistor (25V, 1.2A) - Rohm

  • 数据手册
  • 价格&库存
2SD2537_1 数据手册
2SD2537 Transistors Medium Power Transistor (25V, 1.2A) 2SD2537 Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) Dimensions (Unit : mm) 2SD2537 4.5 1.6 0.5 1.5 (1) (2) (3) 1.0 2.5 4.0 Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 Single pulse Pw=100ms 0.4 0.4 0.5 1.5 3.0 1.5 0.4 Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 30 25 12 1.2 2 0.5 2 150 −55 to +150 Unit V V V A (DC) A (Pulse) ∗1 W W °C °C ∗2 ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter ∗2 When mounted on a 40×40×0.7mm ceramic board. Packaging specifications and hFE Type 2SD2537 MPT3 V DV T100 1000 Package hFE Marking Code Basic ordering unit (pieces) Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. 30 25 12 − − − − 820 − − Typ. − − − − − − − − 200 20 Max. − − − 0.3 0.3 0.3 1.2 1800 − − Unit V V V µA µA V V − MHz pF IC=10µA IC=1mA IE=10µA VCB=30V VEB=12V Conditions IC/IB=500mA/10mA IC/IB=0.5A/10mA VCE/IC=5V/0.5A VCE=10V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz ∗ ∗ Rev.C 1/3 2SD2537 Transistors Electrical characteristics curves 2.0 COLLECTOR CURRENT : IC (mA) Ta=25°C 2.0µA 2.0 3.5m A 2000 COLLECTOR CURRENT : IC (A) 1.6 1.8µA 1.6µA 1.6 4.0mA 4.5mA 5.0mA 2.5mA 2.0mA COLLECTOR CURRENT : IC (mA) 3.0m A 1000 500 200 100 VCE=5V Pulsed 1.2 1.4µA 1.2µA 1.0µA 1.2 1.5mA Ta=10 0°C −25°C 0.2 0.4 50 20 10 5 2 0 0.8 0.8µA 0.6µA 0.4µA 0.2µA 0.3 IB=0 0.4 0.5 0.8 1.0mA 0.4 0.4 0.5mA IB=0 0.3 Ta=25°C Pulsed 0.4 0.5 0 0 0.1 0.2 0 0 0.1 0.2 0.6 25°C 0.8 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Ground emitter output characteristics( ) Fig.2 Ground emitter output characteristics ( ) Fig.3 Ground emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) 10000 5000 DC CURRENT GAIN : hFE Ta=25°C Pulsed 10000 5000 Ta=100°C 25°C VCE=5V Pulsed 1000 500 200 100 50 IC/IB=100 20 10 5 2 1 2 5 10 20 50 100 200 10 Ta=25°C Pulsed DC CURRENT GAIN : hFE 2000 1000 500 200 100 50 20 10 2 5 10 20 VCE=10V 1V 5V 3V 2000 1000 500 200 100 50 20 10 −25°C 50 50 100 200 500 1000 2000 2 5 10 20 50 100 200 500 1000 2000 500 1000 2000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) BASE SATURATION VOLTAGE : VBE(sat) (mV) 500 200 100 50 20 10 5 2 1 2 5 10 20 50 100 200 Ta=100°C 25°C −25°C 5000 2000 1000 500 100 200 100 50 20 10 2 5 10 20 50 100 200 IC/IB=10 50 BASE SATURATION VOLTAGE : VBE(sat) (mV) 1000 IC/IB=50 Pulsed 10000 Ta=25°C Pulsed 10000 5000 2000 1000 500 100 200 100 50 20 10 2 5 10 20 50 100 200 Ta= −25°C 50 IC/IB=50 Pulsed 500 1000 2000 500 1000 2000 500 1000 2000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Base-emitter saturation voltage vs. collector current ( ) Fig.9 Base-emitter saturation voltage vs. collector current ( ) Rev.C 2/3 2SD2537 Transistors COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHz) 5000 2000 1000 500 200 100 50 20 10 −1 −2 −5 −10 −20 VCE=10V Ta=25°C Pulsed 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 f=1MHz IE=0A Ta=25°C −50 −100 −200 −500 −1000 50 100 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Gain bandwidth product vs. emitter current Fig.11 Collector output capacitance vs. collector-base voltage Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1
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