2SD2537_11

Medium Power Transistor (25V, 1.2A) 2SD2537 Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) Dimensions (Unit : mm) 2SD2537 4.5 1.6 0.5 1.5 (1) (2) (3) 1.0 2.5 4.0 Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 Single pulse Pw=10ms 0.4 0.4 0.5 1.5 3.0 1.5 0.4 Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 30 25 12 1.2 2 0.5 2 150 −55 to +150 Unit V V V A (DC) A (Pulse) ∗1 W W °C °C ∗2 ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter ∗2 When mounted on a 40×40×0.7mm ceramic board. Packaging specifications and hFE Type 2SD2537 MPT3 V DV T100 1000 Package hFE Marking Code Basic ordering unit (pieces) Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. 30 25 12 − − − − 820 − − Typ. − − − − − − − − 200 20 Max. − − − 0.3 0.3 0.3 1.2 1800 − − Unit V V V μA μA V V − MHz pF IC=10μA IC=1mA IE=10μA VCB=30V VEB=12V Conditions IC/IB=500mA/10mA IC/IB=0.5A/10mA VCE/IC=5V/0.5A VCE=10V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz ∗ ∗ Electrical characteristics curves 2.0 COLLECTOR CURRENT : IC (mA) Ta=25°C 2.0μA COLLECTOR CURRENT : IC (A) 2.0 3.5m A 2000 1.6 1.8μA 1.6μA 1.6 4.0mA 4.5mA 5.0mA 2.5mA 2.0mA COLLECTOR CURRENT : IC (mA) 3.0m A 1000 500 200 100 VCE=5V Pulsed 1.2 1.4μA 1.2μA 1.0μA 1.2 1.5mA 0.8μA 0.6μA 0.4μA 0.2μA 0.3 IB=0 0.4 0.5 20 10 5 2 0 0.2 0.4 0.4 0.5mA IB=0 0.3 Ta=25°C Pulsed 0.4 0.5 0 0 0.1 0.2 0 0 0.1 0.2 Ta=10 0.4 0.8 0.8 1.0mA −25°C 25°C 0.6 0.8 0°C 50 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Ground emitter output characteristics( ) Fig.2 Ground emitter output characteristics ( ) Fig.3 Ground emitter propagation characteristics www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.05 - Rev.D 2SD2537 10000 5000 Ta=25°C Pulsed 10000 5000 Ta=100°C 25°C Data Sheet COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) VCE=5V Pulsed 1000 500 200 100 50 IC/IB=100 20 10 5 2 1 2 5 10 20 50 100 200 50 Ta=25°C Pulsed DC CURRENT GAIN : hFE 2000 1000 500 200 100 50 20 10 2 5 10 20 DC CURRENT GAIN : hFE VCE=10V 1V 5V 3V 2000 1000 500 200 100 50 20 10 −25°C 10 50 100 200 500 1000 2000 2 5 10 20 50 100 200 500 1000 2000 500 1000 2000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) BASE SATURATION VOLTAGE : VBE(sat) (mV) 500 200 100 50 20 10 5 2 1 2 5 10 20 50 100 200 Ta=100°C 25°C −25°C 5000 2000 1000 500 100 200 100 50 20 10 2 5 10 20 50 100 200 IC/IB=10 50 BASE SATURATION VOLTAGE : VBE(sat) (mV) 1000 IC/IB=50 Pulsed 10000 Ta=25°C Pulsed 10000 5000 2000 1000 500 100 200 100 50 20 10 2 5 10 20 50 100 200 Ta= −25°C 50 IC/IB=50 Pulsed 500 1000 2000 500 1000 2000 500 1000 2000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Base-emitter saturation voltage vs. collector current ( ) Fig.9 Base-emitter saturation voltage vs. collector current ( ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHz) 5000 2000 1000 500 200 100 50 20 10 −1 −2 −5 −10 −20 VCE=10V Ta=25°C Pulsed 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 f=1MHz IE=0A Ta=25°C −50 −100 −200 −500 −1000 50 100 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Gain bandwidth product vs. emitter current Fig.11 Collector output capacitance vs. collector-base voltage www.rohm.com c ○ 2011 ROHM Co., Ltd. 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