2SD2675TL

2SD2675 Transistors General purpose amplification (30V, 1A) 2SD2675 zExternal dimensions (Units : mm) zApplication Low frequency amplifier 2.8 Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 1 A ICP 2 Power dissipation PC 500 Junction temperature Tj Range of storage temperature Tstg ∗1 Single pulse, PW=1ms ∗2 Each Terminal Mounted on a Recommended 0.4 (3) (1) 1.0MAX 0.7 0.85 (2) 0~0.1 Each lead has same dimensions Abbreviated symbol : EU (1) Base (2) Emitter (3) Collector zPackaging specifications zAbsolute maximum ratings (Ta=25°C) Collector current 1.9 2.9 0.16 0.3 ~0.6 ROHM : TSMT3 Parameter 0.95 0.95 1.6 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ 350mV At IC = 500mA / IB = 25mA Package Type 150 °C °C TL Basic ordering unit (pieces) 3000 2SD2675 A ∗1 mW ∗2 −55~+150 Taping Code zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit − − Conditions IC=10µA Collector-base breakdown voltage BVCBO 30 Collector-emitter breakdown voltage BVCEO 30 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=10µA Collector cutoff current ICBO − − 100 nA VCB=30V Emitter cutoff current IEBO − − 100 nA VEB=6V VCE(sat) − 120 350 mV IC/IB=500mA/25mA DC current gain hFE 270 − 680 − VCE/IC=2V/100mA Transition frequency fT − 320 − Cob − 7 − Collector-emitter saturation voltage Corrector output capacitance V ∗ MHz VCE=2V, IE=−100mA, f=100MHz ∗ pF VCB=10V, IE=0A, f=1MHz ∗ Pulsed 1/2 2SD2675 Transistors BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 Ta=25°C Ta=−40°C 100 VCE=2V Pulsed 10 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Ta=25°C Ta=100°C Ta=−40°C 0.01 0.001 0 0.5 1.0 Ta=−40°C Ta=25°C Ta=100°C Ta=100°C 0.1 VCE(sat) Ta=25°C Ta=−40°C 0.01 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Ta=25°C VCE=2V 1 0.1 IC/IB=50/1 IC/IB=20/1 0.01 IC/IB=10/1 0.001 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.3 Collector-emitter saturation voltage vs. collector current tstg tdon 100 VCE=2V Ta=25°C f=100MHz 0.1 Fig.5 Gain bandwidth product vs. emitter current Fig.4 Grounded emitter propagation characteristics 10 1000 EMITTER CURRENT : IE (A) BASE TO EMITTER VOLTAGE : VBE (V) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1 10 0.01 1.5 100 VBE(sat) 1000 VCE=2V Pulsed 0.1 =20/1 IC/IB=20 Pulsed Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 1 10 SWITCHING TIME : (ns) DC CURRENT GAIN : hFE Ta=100°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves 1 100 tf tr 10 Ta=25°C VCE=5V IC/IB=20/1 1 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.6 Switching time IC=0A f=1MHz Ta=25°C Cib Cob 10 1 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2/2