2SD2696

Low frequency transistor (for amplification) 2SD2696 Structure NPN Silicon Epitaxial Planar Transistor Features 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low. VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA (1) Base Dimensions (Unit : mm) VMT3 (3) 0.2 0.22 (1)(2) 0.8 1.2 0.4 0.4 0.8 0.13 0.5 (2) Emitter (3) Collector Abbreviated symbol : UH Applications Switching Packaging specifications Package Type 2SD2696 Code Basic ordering unit (pieces) Taping T2L 8000 Inner circuit (3) Collector (1) Base Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP ∗1 PD ∗2 Tj Tstg Limits 30 30 6 400 800 150 150 −55 to +150 Unit V V V mA mA mW / TOTAL °C °C (2) Emitter ∗1 Pw=10ms, Single pulse ∗2 Each terminal mounted on a recommended land. Electrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Min. 30 30 6 − − − 270 − − Typ. − − − − − 120 − 400 3.0 Max. − − − 100 100 300 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=1mA IC=10µA IE=10µA VCB= 30V VEB= 6V IC=100mA, IB= 2mA VCE=2V, IC=100mA VCE=2V, IE= −100mA, f=100MHz VCB=10V, IE= 0A, f=1MHz www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 0.2 1.2 0.32 1/3 2009.05 - Rev.B 2SD2696 Electrical characteristics curves 1.2mA 1mA 0.8mA 200 0.6mA 0.4mA 100 IB=0.2mA 0 0 1 2 3 4 5 COLLECTOR - EMITTER VOLTAGE : VCE [V] 1 0.2 0.4 0.6 0.8 1 COLLECTOR CURRENT : I C [mA] 400 COLLECTOR CURRENT : I C [mA] 1000 Ta=25°C pulsed 2mA 1.6mA VCE=2V pulsed Ta=125°C 85°C 25°C -40°C Data Sheet 300 100 10 BASE TO EMITTER VOLTAGE : VBE [V] Fig.1 Typical Output Characteristics Fig.2 Grounded Emitter Propagation Characteristics 1000 1000 VCE=5V DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 100 VCE=2V 100 Ta=125°C 85°C 25°C -40°C 10 Ta=25°C pulsed 1 10 100 1000 10 1 10 100 VCE=2V pulsed 1000 COLLECTOR CURRENT : IC [mA] COLLECTOR CURRENT : IC [mA] Fig.3 DC Current Gain vs Collector Current （Ⅰ） Fig.4 DC Current Gain vs Collector Current （Ⅱ） 0.1 IC /IB=50/1 20/1 10/1 COLLECTOR SATURATION VOLTAGE : VCE(s at) [V] 1 1 Ta=25°C pulsed IC /IB=10/1 pulsed COLLECTOR SATURATION VOLTAGE : VCE(sat) [V] 0.1 Ta= 125°C 85°C 25°C 　　　 - 40°C 0.01 1 10 100 1000 COLLECTOR CURRENT : IC [mA] 0.01 1 10 100 1000 COLLECTOR CURRENT : IC [mA] Fig.5 Collector-Emitter Saturation Voltage vs Collector Current (Ⅰ) Fig.6 Collector-Emitter Saturation Voltage vs Collector Current (Ⅱ) www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.05 - Rev.B 2SD2696 1 COLLECTOR SATURATION VOLTAGE : VCE(s at) [V] 1 IC /IB=20/1 pulsed COLLECTOR SATURATION VOLTAGE : VCE(sat) [V] Ta=125°C 85°C 25°C 　　　-40°C 0.1 Data Sheet 0.1 Ta=125℃ 85℃ 25℃ 　　　-40℃ 0.01 1 10 100 COLLECTOR CURRNT : IC [mA] 1000 0.01 1 IC /IB=50/1 pulsed 10 100 1000 COLLECTOR CURRENT : IC [mA] Fig.7 Collector-Emitter Saturation Voltage vs Collector Current (Ⅲ) Fig.8 Collector-Emitter Saturation Voltage vs Collector Current (Ⅳ) 1000 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) Ta=25°C VCE= 2V pulsed 100 TRANSITION FREQUENCY : fT [MHz] Ta=25°C f=1MHz IE=0A IC =0A Cib 10 100 Cob 10 1 10 100 1000 EMITTER CURRENT : IE [mA] 1 0.1 1 10 100 Fig.9 Transion frequency vs Emitter Collector COLLECTOR - BASE VOLTAGE : VCB ( V) EMITTER - BASE VOLTAGE : VEB ( V) Fig.10 Emitter input capacitance vs. EmitterBase Voltage Collector output capacitance vs. CollectorBase Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. 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