Data Sheet
2.5V Drive Nch MOSFET
2SK3018UB
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
UMT3F
2.0
0.32
0.9
0.53
(1) 0.65 0.65 1.3
(2) 0.13
Abbreviated symbol : KN
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) 2SK3018UB Taping TCL 3000
Inner circuit
(3)
0.53
0.425
Features 1) Low on-resistance. 2) Low voltage drive(2.5V drive).
0.425
(3)
1.25
2.1
(1)
∗2
∗1
Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.
(1) Gate (2) Source (3) Drain
(2)
Limits 30 20 100
Unit V V mA mA mW C C
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
VDSS Continuous Pulsed VGSS ID IDP PD Tch Tstg
*1 *2
400 200 150 55 to 150
Thermal resistance Parameter Channel to Ambient
* Each terminal mounted on a recommended land.
Symbol Rth (ch-a)*
Limits 625
Unit C / W
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1/5
2011.10 - Rev.A
2SK3018UB
Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
*Pulsed
Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Min. 30 0.8 20 Typ. 5 7 13 9 4 15 35 80 80 Max. 1 1 1.5 8 13 Unit A V A V Conditions VGS=20V, VDS=0V ID=10A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100A ID=10mA, VGS=V ID=1mA, VGS=2.5V VDS=5V VGS=0V f=1MHz VDD 5V, ID=10mA VGS=5V RL=500 RG=10
Data Sheet
Drain-source breakdown voltage V(BR)DSS
mS VDS=3V, ID=10mA pF pF pF ns ns ns ns
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2/5
2011.10 - Rev.A
2SK3018UB
Electrical characteristic curves
Data Sheet
GATE THRESHOLD VOLTAGE : VGS(th) (V)
0.15 4V 3V
200m
Ta=25°C Pulsed
100m
DRAIN CURRENT : ID (A)
VDS=3V Pulsed
2
DRAIN CURRENT : ID (A)
3.5V
50m 20m 10m 5m 2m 1m
0.5m
VDS=3V ID=0.1mA Pulsed
1.5
0.1
2.5V
1
0.05
2V VGS=1.5V
Ta=125°C 75°C 25°C −25°C
0.5
0.2m
4 5
0 0
1
2
3
0.1m 0
1
2
3
4
0 −50 −25
0
25
50
75
100
125
150
DRAIN-SOURCE VOLTAGE : VDS (V)
GATE-SOURCE VOLTAGE : VGS (V)
CHANNEL TEMPERATURE : Tch (°C)
Fig.1 Typical output characteristics
Fig.2 Typical transfer characteristics
Fig.3 Gate threshold voltage vs. channel temperature
50
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω)
20 10 5
Ta=125°C 75°C 25°C −25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω)
20 10 5
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω)
VGS=4V Pulsed
50
Ta=125°C 75°C 25°C −25°C
VGS=2.5V Pulsed
15
Ta=25°C Pulsed
10
2 1 0.5 0.001 0.002
2 1 0.5 0.001 0.002
5
ID=10mA ID=1mA
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0 0
5
10
15
20
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Static drain-source on-state resistance vs. drain current (Ι)
Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ)
Fig.6 Static drain-source on-state resistance vs. gate-source voltage
9
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω)
8 7 6 5 4 3 2 1 0 −50 −25 0 25 50 75
ID=100mA
VGS=4V Pulsed
0.5
VDS=3V Pulsed
200m 100m
VGS=0V Pulsed
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
0.1 0.05 0.02 0.01 0.005 0.002
ID=10mA
Ta=−25°C 25°C 75°C 125°C
SOURCE CURRENT : IS (A)
0.2
50m 20m 10m 5m 2m 1m 0.5m 0.2m
Ta=125°C 75°C 25°C −25°C
100 125
150
0.001 0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0.1m
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (°C)
DRAIN CURRENT : ID (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.7 Static drain-source on-state resistance vs. channel temperature
Fig.8 Forward transfer admittance vs. drain current
Fig.9 Reverse drain current vs. source-drain voltage (Ι)
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3/5
2011.10 - Rev.A
2SK3018UB
Data Sheet
200m 100m
Ta=25°C Pulsed
50
SOURCE CURRENT : IS (A)
50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V
20
Ta=25°C f=1MHZ VGS=0V
1000 500
tf td(off)
CAPACITANCE : C (pF)
Ciss
10 5
SWITHING TIME : t (ns)
200 100 50 20 10 5 2 0.1 0.2
Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed
0V
Coss Crss
tr td(on)
2 1 0.5 0.1
0
0.5
1
1.5
0.2
0.5
1
2
5
10
20
50
0.5
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (mA)
Fig.10 Reverse drain current vs. source-drain voltage (ΙΙ)
Fig.11 Typical capacitance vs. drain-source voltage
Fig.12 Switching characteristics
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4/5
2011.10 - Rev.A
2SK3018UB
Measurement circuits
Data Sheet
Pulse width
VGS ID RL D.U.T. RG VDD VDS
VGS VDS
50% 10% 10% 90% td(on) ton tr
90%
50% 10% 90%
td(off) toff
tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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5/5
2011.10 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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R1120A
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