2SK3019EB

Data Sheet 2.5V Drive Nch MOSFET 2SK3019EB  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) EMT3F Features 1) High-speed switching. 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy. (3) (1) (2) Abbreviated symbol : KN  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) 2SK3019EB Taping TCL 3000   Inner circuit (3) (1) ∗2 ∗1 (1) Gate (2) Source (3) Drain (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a reference land. Limits 30 20 100 Unit V V mA mA mW C C VDSS VGSS Continuous Pulsed ID IDP PD Tch Tstg *1 *2 400 150 150 55 to 150  Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a reference land. Symbol Rth (ch-a)* Limits 833 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A 2SK3019EB  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on)* tr * td(off)* tf * Min. 30 0.8 20 Typ. 5 7 13 9 4 15 35 80 80 Max. 1 1 1.5 8 13 Unit A V A V  Conditions VGS=20V, VDS=0V ID=10A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100A ID=10mA, VGS=4V ID=1mA, V GS=2.5V VDS=5V VGS=0V f=1MHz VDD 5V, I D=10mA VGS=5V RL=500 RG=10 Data Sheet Drain-source breakdown voltage V(BR)DSS mS VDS=3V, ID=10mA pF pF pF ns ns ns ns www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A 2SK3019EB Electrical characteristics curves 　 Data Sheet GATE THRESHOLD VOLTAGE : VGS(th) (V) 0.15 4V DRAIN CURRENT : ID (A) 200m 3V DRAIN CURRENT : ID (A) 3.5V Ta=25°C Pulsed 100m 50m 20m 10m 5m 2m 1m 0.5m VDS=3V Pulsed 2 VDS=3V ID=0.1mA Pulsed 1.5 0.1 2.5V 1 0.05 2V VGS=1.5V Ta=125°C 75°C 25°C −25°C 0.5 0.2m 4 5 0 0 1 2 3 0.1m 0 1 2 3 4 0 −50 −25 0 25 50 75 100 125 150 DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (°C) Fig.1 Typical output characteristics Fig.2 Typical transfer characteristics Fig.3 Gate threshold voltage vs. channel temperature 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 20 10 5 Ta=125°C 75°C 25°C −25°C 20 10 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS=4V Pulsed 50 Ta=125°C 75°C 25°C −25°C VGS=2.5V Pulsed 15 Ta=25°C Pulsed 10 2 1 0.5 0.001 0.002 2 1 0.5 0.001 0.002 5 ID=10mA ID=1mA 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0 5 10 15 20 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static drain-source on-state resistance vs. drain current (Ι) Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ) Fig.6 Static drain-source on-state resistance vs. gate-source voltage 9 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 8 7 6 5 4 3 2 1 0 −50 −25 0 25 50 75 ID=100mA VGS=4V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 0.5 VDS=3V Pulsed 200m 100m SOURCE CURRENT : IS (A) 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Ta=−25°C 25°C 75°C 125°C VGS=0V Pulsed 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m ID=10mA Ta=125°C 75°C 25°C −25°C 100 125 150 0 0.5 1 1.5 CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.7 Static drain-source on-state resistance vs. channel temperature Fig.8 Forward transfer admittance vs. drain current Fig.9 Reverse drain current vs. source-drain voltage (Ι) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.A 2SK3019EB 　 Data Sheet 200m 100m SOURCE CURRENT : IS (A) Ta=25°C Pulsed 50 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V CAPACITANCE : C (pF) 20 10 5 Ta=25°C f=1MHZ VGS=0V 1000 500 SWITHING TIME : t (ns) tf td(off) Ciss 200 100 50 20 10 5 2 0.1 0.2 Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed 0V Coss Crss tr td(on) 2 1 0.5 0.1 0 0.5 1 1.5 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 100 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.10 Reverse drain current vs. source-drain voltage (ΙΙ) Fig.11 Typical capacitance vs. drain-source voltage Fig.12 Switching characteristics www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A 2SK3019EB  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A