2SK3019
Transistor
2.5V Drive Nch MOS FET
or
2SK3019
zDimensions (Unit : mm)
zStructure
Silicon N-channel
MOSFET
e
N co
ew m
m
D
es en
ig de
ns d
f
EMT3
0.7
1.6
0.55
0.3
(1)
0.2
0.2
0.5 0.5
0.15
0.1Min.
0.8
(2)
1.6
(3)
zApplications
Interfacing, switching (30V, 100mA)
1.0
(1)Source
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
(2)Gate
(3)Drain
Abbreviated symbol : KN
zPackaging specifications
Package
Type
zEquivalent circuit
Taping
Drain
TL
Code
Basic ordering unit
(pieces)
3000
2SK3019
Gate
R
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
ID
±100
mA
IDP∗
±400
mA
Total power dissipation
PD∗2
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
N
ot
Parameter
Continuous
Drain current
Pulsed
1
∗ Gate
Protection
Diode
Source
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
zThermal resistance
Parameter
Channel to ambient
Symbol
Limits
Unit
Rth(ch-a) ∗
833
°C / W
∗ With each pin mounted on the recommended lands.
Rev.C
1/3
2SK3019
Transistor
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±1
µA
VGS=±20V, VDS=0V
V(BR)DSS
30
−
−
V
ID=10µA, VGS=0V
Gate-source leakage
Drain-source breakdown voltage
Conditions
IDSS
−
−
1.0
µA
VDS=30V, VGS=0V
Gate threshold voltage
VGS(th)
0.8
−
1.5
V
VDS=3V, ID=100µA
Static drain-source on-state
resistance
RDS(on)
−
5
8
Ω
ID=10mA, VGS=4V
RDS(on)
−
7
13
Ω
ID=1mA, VGS=2.5V
Forward transfer admittance
|Yfs|
20
−
−
ms
ID=10mA, VDS=3V
Input capacitance
Ciss
−
13
−
pF
VDS=5V
Output capacitance
Coss
−
9
−
pF
VGS=0V
Reverse transfer capacitance
Crss
−
4
−
pF
f=1MHz
Turn-on delay time
td(on)
−
15
−
ns
ID=10mA, VDD
tr
−
35
−
ns
VGS=5V
td(off)
−
80
−
ns
RL=500Ω
tf
−
80
−
ns
RG=10Ω
e
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Zero gate voltage drain current
or
Parameter
Rise time
Turn-off delay time
Fall time
5V
0.15
200m
3V
3.5V
0.1
2.5V
0.05
2V
1
2
50m
20m
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
1m
0.5m
0.2m
VGS=1.5V
0
0
VDS=3V
Pulsed
100m
Ta=25°C
Pulsed
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
4V
GATE THRESHOLD VOLTAGE : VGS(th) (V)
zElectrical characteristic curves
3
4
0.1m
0
5
DRAIN-SOURCE VOLTAGE : VDS (V)
1
3
2
4
50
Ta=125°C
75°C
25°C
−25°C
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0
−50 −25
0.5
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
20
10
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0
25
50
75
100
15
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
10
0.5
125 150
Fig.3 Gate threshold voltage vs.
channel temperature
R
ot
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
N
20
1
CHANNEL TEMPERATURE : Tch (°C)
Fig.2 Typical transfer characteristics
VGS=4V
Pulsed
VDS=3V
ID=0.1mA
Pulsed
1.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical output characteristics
50
2
0.5
DRAIN CURRENT : ID (A)
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
Rev.C
2/3
2SK3019
Transistor
4
0.05
0.02
0.01
0.005
0.002
0
25
50
75
100 125
0.001
0.0001 0.0002
150
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
0.005 0.01 0.02
0.05 0.1 0.2
50
5m
2m
1m
0.5m
CAPACITANCE : C (pF)
VGS=4V
10m
0.1m
0
5m
2m
1m
0V
0.5
1
0.5m
0.2m
0
Ciss
10
5
Coss
Crss
2
1.5
0.5
1000
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
Pulsed
tf
500
td(off)
200
100
50
20
tr
td(on)
10
5
0.5
0.1
0.2
0.5
1
2
5
10
20
50
Fig.11 Typical capacitance vs.
drain-source voltage
R
Fig.10 Reverse drain current vs.
source-drain voltage (ΙΙ)
1.5
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
2
0.1 0.2
0.5
DRAIN-SOURCE VOLTAGE : VDS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
1
SOURCE-DRAIN VOLTAGE : VSD (V)
1
0.2m
Ta=125°C
75°C
25°C
−25°C
10m
0.1m
0.5
Ta=25°C
f=1MHZ
VGS=0V
20
20m
20m
Fig.8 Forward transfer
admittance vs. drain current
Ta=25°C
Pulsed
50m
50m
DRAIN CURRENT : ID (A)
CHANNEL TEMPERATURE : Tch (°C)
REVERSE DRAIN CURRENT : IDR (A)
0.0005 0.001 0.002
SWITHING TIME : t (ns)
0
−50 −25
100m
VGS=0V
Pulsed
100m
e
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m
D
es en
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f
3
Ta=−25°C
25°C
75°C
125°C
0.1
200m
or
ID=50mA
5
200m
REVERSE DRAIN CURRENT : IDR (A)
ID=100mA
6
1
VDS=3V
Pulsed
0.2
7
2
0.5
VGS=4V
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
9
8
1
2
5
10
20
50
100
DRAIN CURRENT : ID (mA)
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
N
ot
zSwitching characteristics measurement circuit
RG
VGS
Pulse width
ID
D.U.T.
VDS
VGS
90%
50%
10%
RL
50%
10%
VDS
10%
VDD
90%
90%
td (on)
ton
Fig.13 Switching time measurement circuit
tr
td (off)
tf
toff
Fig.14 Switching time waveforms
Rev.C
3/3
Notice
Notes
1) The information contained herein is subject to change without notice.
or
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
e
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D
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3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
R
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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non-compliance with any applicable laws or regulations.
N
ot
13) When providing our Products and technologies contained in this document to other countries,
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R1102A
