2SK3050

2SK3050 Transistors 10V Drive Nch MOS FET 2SK3050 Structure Silicon N-channel MOSFET External dimensions (Unit : mm) CPT3 6.5 5.1 2.3 0.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 5.5 1.5 0.9 0.75 0.65 (1)Gate (2)Drain (3)Source 0.9 (1) 2.3 (2) (3) 2.3 0.8Min. 0.5 1.0 Abbreviated symbol : K3050 Applications Switching Packaging specifications Package Code Type Basic ordering unit (pieces) Taping TL 2500 Gate ∗1 Inner circuit Drain 2SK3050 Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Reverse drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 10mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed Continuous Pulsed ID IDP IDR IDRP IS ISP IAS EAS PD Tch Tstg ∗1 ∗2 ∗2 ∗1 ∗1 Limits 600 ±30 2 6 2 6 2 6 2 21 20 150 −55 to +150 Unit V V A A A A A A A mJ W °C °C ∗1 BODY DIODE Source Thermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 6.25 Unit °C/W Rev.A 2.5 1.5 9.5 1/5 2SK3050 Transistors Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ Pulsed Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) ∗ | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 600 − 2.0 − 0.5 − − − − − − − − − − Typ. − − − − 4.4 1.0 280 48 16 12 17 29 105 12.8 3.3 5.5 Max. ±100 − 100 4.0 5.5 − − − − − − − − 25.6 − − Unit nA V µA V Ω S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=1A, VGS=10V ID=1A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1A, VDD 300V VGS=10V RL=300Ω RG=10Ω VDD=300V VGS=10V ID=2A Body diode characteristics (Source-drain) (Ta=25°C) Parameter Symbol Forward voltage Reverse recovery time Reverse recovery charge ∗ Pulsed VSD trr Qrr ∗ ∗ Min. − − − Typ. − 460 2.0 Max. 2.0 − − Unit V ns µC Conditions IS= 2A, VGS=0V IDR=2A, VGS=0V di/dt= 100A / µs Rev.A 2/5 2SK3050 Transistors Electrical characteristic curves 10 5 ea ar ) is on th S( in RD n tio by ra d pe ite O lim is 2.0 5 Ta=25°C Pulsed VGS=10V 2 VDS=10V Pulsed DRAIN CURRENT : ID (A) 2 1 0.5 0.2 0.1 0.05 10 DRAIN CURRENT : ID (A) 1.6 6V DRAIN CURRENT : ID (A) m s 1 0.5 Ta= −25°C 25°C 75°C 125°C s 0µ s 10 1m PW C D 0 =1 1.2 s 0m tion ra pe O 50 100 200 500 1000 5.5V 0.8 5V 0.2 0.1 0.05 0.02 0 0.4 4.5V 0.02 Tc=25°C Single pulse 0.01 12 5 1 0 20 0 0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Maximum safe operating area Fig.2 Typical output characteristics Fig.3 Typical transfer characteristics GATE THRESHOLD VOLTAGE : VGS(th) (V) 6 5 4 3 2 1 0 −50 −25 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS=10V lD=1mA 100 VGS=10V Pulsed Ta=125°C 75°C 9 8 7 6 ID=2A Ta=25°C Pulsed 20 25°C −25°C 10 5 5 4 3 0 1A 2 0 25 50 75 100 125 150 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 5 10 15 20 25 30 CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : I D (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Gate threshold voltage vs. channel temperature Fig.5 Static drain-source on-state resistance vs. drain current Fig.6 Static drain-source on-state resistance vs. gate-source voltage FORWARD TRANSFER ADMITTANCE : |YfS| (S) REVERSE DRAIN CURRENT : IDR (A) 15 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS=10V Pulsed 2 VDS=10V Pulsed Ta=−25°C 25°C 75°C 125°C 5 2 1 0.5 0.2 0.1 0.05 0.02 0 VGS=0V Pulsed 1 0.5 10 Ta=125°C 75°C 25°C −25°C ID=2A 0.2 5 1A 0.1 0.05 0 −50 −25 0 25 50 75 100 125 150 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : I D (A) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.7 Static drain-source on-state resistance vs. channel temperature Fig.8 Forward transfer admittance vs. drain current Fig.9 Reverse drain current vs. source-drain voltage ( Ι ) Rev.A 3/5 2SK3050 Transistors 5 REVERSE DRAIN CURRENT : IDR (A) Ta=25°C Pulsed 0V CAPACITANCE : C (pF) 1000 500 200 100 50 20 10 5 VGS=0V 2 Pulsed 5000 2000 SWITCHING TIME : t (ns) 2 1 0.5 VGS=10V Ciss 1000 500 200 100 50 20 10 Ta=25°C VDD=300V VGS=10V RG=10Ω Pulsed Coss tf 0.2 0.1 0.05 0 Crss Ta=25°C f=1MHz 1 2 5 10 20 50 100 200 500 1000 td(off) tr 0.5 1 td(on) 2 5 10 20 0.5 1.0 1.5 0.5 0.05 0.1 0.2 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) Fig.10 Reverse drain current vs. source-drain voltage ( ΙΙ ) Fig.11 Typical capacitance vs. drain-source voltage Fig.12 Switching characteristics 500 DRAIN-SOURCE VOLTAGE : VDS (V) 14 VDS VDD=400V VGS 400 12 10 REVERSE RECOVERY TIME : trr (ns) GATE-SOURCE VOLTAGE : VGS (V) Ta=25°C ID=2A Pulsed 5000 Ta=25°C di/dt=100A/µs VGS=0V 2000 Pulsed 300 350V 100V 1000 500 VDD=100V 8 350V 200 6 4 400V 200 100 50 0.05 0.1 0.2 100 2 0 0 0 16 2 3 4 5 10 12 14 0.5 1 2 5 10 TOTAL GATE CHARGE : Qg (nC) REVERSE DRAIN CURRENT : IDR (A) Fig.13 Dynamic input characteristics Fig.14 Reverse recovery time vs. reverse drain current 10 NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse Tc=25°C θth(ch-c)(t)=r(t) · θth(ch-c) θth(ch-c)=6.25°C/W PW T D=PW T 0.001 10µ 100µ 1m 10m 100m 1 10 PULSE WIDTH : PW (s) Fig.15 Normalized transient thermal resistance vs. pulse width Rev.A 4/5 2SK3050 Transistors Switching characteristics measurement circuit Pulse width 50% 10% 10% 90% 50% VGS ID D.U.T. RL VDS VGS VDS RG 10% 90% 90% td(off) tf toff VDD td(on) ton tr Fig.16 Switching time measurement circuit Fig.17 Switching time waveforms IG=2mA RG VGS ID D.U.T. RL VDS VDD Fig.18 Gate charge measurement circuit Rev.A 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1