2SK3065

2SK3065 Transistors Small switching (60V, 2A) 2SK3065 !Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel MOS FET transistor !External dimensions (Units : mm) 4.5+0.2 −0.1 1.6±0.1 1.5±0.1 +0.5 4.0−0.3 2.5+0.2 −0.1 0.5±0.1 (1) (2) (3) 0.4±0.1 1.5±0.1 1.0±0.3 0.4+0.1 −0.05 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 ROHM : MPT3 E I A J : SC-62 Abbreviated symbol : KE (1) Gate (2) Drain (3) Source !Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Reverse drain current Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗1 IDR IDRP∗1 PD Tch Tstg Limits 60 ±20 2 8 2 8 0.5 2∗2 150 −55∼+150 Unit V V A A A A W °C °C !Internal equivalent circuit Drain Gate Total power dissipation(Tc=25°C) Channel temperature Storage temperature ∗Gate Protection Diode Source ∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 When mounted on a 40 × 40 × 0.7 mm alumina board. ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. !Electrical characteristics (Ta = 25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) RDS(on) Yfs∗ Ciss Coss Crss td(on) tr td(off) tf Min. − 60 − 0.8 − − 1.5 − − − − − − − Typ. − − − − 0.25 0.35 − 160 85 25 20 50 120 70 Max. ±10 − 10 1.5 0.32 0.45 − − − − − − − − Unit µA V µA V Ω Ω S pF pF pF ns ns ns ns Test Conditions VGS = ±20V, VDS = 0V ID = 1mA, VGS = 0V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA ID = 1A, VGS = 4V ID = 1A, VGS = 2.5V ID = 1A, VDS = 10V VDS = 10V VGS = 0V f = 1MHz ID = 1A, VDD VGS = 4V RL = 30Ω RG = 10Ω 30V ∗ Pw ≤ 300µs, Duty cycle ≤ 1% 2SK3065 Transistors !Packaging specifications Package Type Code Basic ordering unit (pieces) 2SK3065 Taping T100 1000 !Electrical characteristic curves 3 TOTAL POWER DISSIPATION : PD(W) 10 DRAIN CURRENT : ID(A) 1 Pw=10ms 2 DRAIN CURRENT : ID(A) When mounted on a 40 x 40 x 0.7 mm aluminum-ceramic board. Operating in this area is limited by RDS(on) 100µs 1ms 2 4V 3.5V 3V 2.5V Ta=25°C Pulsed 2V 1 0.1 DC OPERATION 1 0.01 Ta=25°C Single Pulsed VGS=1.5V 10 100 0 0 5 DRAIN-SOURCE VOLTAGE : VDS(V) 0 0 25 50 75 100 125 150 175 0.001 0.1 1 10 AMBIENT TEMPERATURE : Ta(°C) DRAIN-SOURCE VOLTAGE : VDS(V) Fig.1 Total Power Dissipation vs. Case Temperature Fig.2 Maximum Safe Operating Area Fig.3 Typical Output Characteristics GATE THRESHOLD VOLTAGE : VGS(th)(V) 10 3 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω) VDS=10V Pulsed 4 VDS=10V 10 VGS=4V Pulsed DRAIN CURRENT : ID(A) 1 Ta=−25°C 25°C 75°C 125°C 2 10mA 1 ID=1mA 1 Ta=125°C 75°C 25°C −25°C 0.1 0 1 2 3 4 5 0 −50 −25 0 25 50 75 100 125 150 0.1 0.01 0.1 1 10 GATE THRESHOLD VOLTAGE : VGS(th)(V) CHANNEL TEMPERATURE : Tch(°C) DRAIN CURRENT : ID(A) Fig.4 Typical Transfer Characteristics Fig.5 Gate Threshold Voltage vs. Channel Temperature Fig.6 Static Drain-Source OnState Resistance vs. Drain Current(Ι) 2SK3065 Transistors 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω) 0.75 2A 0.5 ID=1A 1 Ta=125°C 75°C 25°C −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω) VGS=2.5V Pulsed 1 Ta=25°C Pulsed 1 VGS=4V Pulsed 0.5 2A 0.25 ID=1A 0 −50 −25 0.1 0.01 0.1 1 10 0 0 5 10 15 20 0 25 50 75 100 125 150 DRAIN CURRENT : ID(A) GATE-SOURCE VOLTAGE : VGS(V) CHANNEL TEMPERATURE : Tch(°C) Fig.7 Static Drain-Source OnState Resistance vs. Drain Current(ΙΙ) Fig.8 Static Drain-Source OnState Resistance vs. Gate-Source Voltage Fig.9 Static Drain-Source OnState Resistance vs. Channel Temperature FORWARD TRANSFER ADMITTANCE : | Yfs |(S) 10 REVERSE DRAIN CURRENT : IDR(A) Ta=−25°C 25°C 125°C 1 75°C REVERSE DRAIN CURRENT : IDR(A) VDS=10V Pulsed 10 VGS=4V Pulsed 10 Ta=25°C Pulsed 4V 1 VGS=0V 1 Ta=125°C 75°C 25°C −25°C 0.1 0.1 0.1 0.01 0.1 1 10 0.01 0 0.4 0.8 1.2 1.6 0.01 0 0.4 0.8 1.2 1.6 DRAIN CURRENT : ID(A) SOURCE-DRAIN VOLTAGE : VSD(V) SOURCE-DRAIN VOLTAGE : VSD(V) Fig.10 Forward Trasfer Admitance vs. Drain Current Fig.11 Reverse Drain Current vs. Source-Drain Voltage(Ι) Fig.12 Reverse Drain Current vs. Source-Drain Voltage(ΙΙ) 1000 CAPACITANCE : C(pF) Ciss 100 Coss td(off) 100 tf tr td(on) REVERSE RECOVERY TIME : trr(ns) VGS=0V f=1MHZ Ta=25°C SWITCHING TIME : t(ns) 1000 VDD 30V VGS=4V RG=10Ω Ta=25°C Pulsed 1000 di/dt=50A/µs VGS=0V Ta=25°C Pulsed 100 10 Crss 1 0 10 DRAIN-SOURCE VOLTAGE : VSD(V) 100 10 0.1 1 DRAIN CURRENT : ID(A) 10 10 0.1 1 REVERSE DRAIN CURRENT : IDR(A) 10 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Switching Characteristics Fig.15 (a measurement circuit diagram Fig.17 , it refers 18 times) Reverse Recovery Time vs. Reverse Drain Current 2SK3065 Transistors 10 NORMALIZED TRANSIENT THERMAL RESISTANCE : r(t) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 When mounted on a 40 x 40 x 0.7 mm aluminum-ceramic board. Ta=25°C θth (ch-c) (t) = r (t) • θth (ch-c) θth (ch-c) =62.5°C/W PW T D= PW T 0.01 Single pulse 0.001 100µ 1m 10m 100m PULSE WIDTH : PW(s) 1 10 100 Fig.16 Normarized Transient Thermal Resistance vs. Pulse Width !Switching characteristics measurement circuit Pulse width 50% 10% 10% 90% 50% VGS ID D.U.T. RL VDS VGS VDS RG 10% 90% 90% td(off) tf toff VDD td(on) ton tr Fig.17 Switching Time Test Circuit Fig.18 Switching Time Waveforms