0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BA12003BF

BA12003BF

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    BA12003BF - High voltage, high current Darlington transistor array - Rohm

  • 数据手册
  • 价格&库存
BA12003BF 数据手册
BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits of Darlington transistors. Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loads such as relay coils, attachments can be kept to a minimum. With an output sustain voltage as high as 60V and an output current (sink current) of 500mA, this product is ideal for use with various drivers and as an interface with other elements. Applications Drivers for LEDs, lamps, relays and solenoids Interface with other elements Features 1) High output current. (IOUT=500mA Max.) 2) High output sustain voltage. (VOUT=50V Max.) 3) Seven Darlington transistors built in. 4) Built-in surge-absorbing clamp diode. (Note : Refer to the “Reference items when using in application.” ) Block diagram IN1 1 16 OUT1 IN2 2 15 OUT2 IN3 3 14 OUT3 IN4 4 13 OUT4 IN5 5 12 OUT5 IN6 6 11 OUT6 IN7 7 10 OUT7 GND 8 9 COM BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs Internal circuit configuration COM COM OUT IN 7.2kΩ 3kΩ GND 3kΩ GND OUT IN 2.7kΩ 7.2kΩ Fig.1 BA12001B Fig.2 BA12003B / BF COM IN 10.5kΩ OUT 7.2kΩ 3kΩ GND Fig.3 BA12004B Absolute maximum ratings (Ta=25°C) Parameter Power supply voltage Input voltage Input current Output current Ground pin current Power dissipation DIP package SOP package other than BA12001B BA12001B Symbol VCE VIN IIN IOUT IGND Pd VR IF Topr Tstg Limits 60 −0.5∼+30 25 500 2.3∗1 1250∗2 625∗3 60 500 −25∼+75 −55∼+150 Unit V V mA / unit mA / unit A mW V mA ˚C ˚C Diode reverse voltage Diode forward current Operating temperature Storage temperature ∗1 Pulse width ≤ 20ms, duty cycle ≤ 10%, same current for all 7 circuits ∗2 Reduced by 10mW for each increase in Ta of 1˚C over 25˚C . ∗3 Reduced by 50mW for each increase in Ta of 1˚C over 25˚C . Recommended operating conditions (Ta=25°C) Parameter Output current Power supply voltage Input voltage (excluding BA12001B) Input current (BA12001B only) Symbol IOUT VCE VIN IIN Min. − − − − Typ. − − − − Max. 350 55 30 25 Unit mA V V mA / unit Conditions Fig.9, 10 − − − BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs Electrical characteristics (Ta=25°C) Parameter Output leakage current DC current transfer ratio Symbol IL hFE Min. − 1000 − Typ. 0 2400 0.94 Output saturation voltage VCE(sat) 1.14 1.46 BA12003B / BF BA12004B Input voltage BA12003B / BF BA12004B BA12003B / BF BA12004B Input current BA12003B / BF BA12004B Diode reverse current Diode forward voltage Input capacitance VIN VIN VIN − − − − − − − 1.75 2.53 1.91 2.75 2.17 3.27 0.90 0.39 0 1.73 30 Max. 10 − 1.1 1.3 1.6 2 5 2.4 6 3.4 8 1.35 0.5 50 2 − µA V pF mA VIN = 3.85V VIN = 5V VR = 60V IF = 350mA VIN = 0V, f = 1MHz V VCE = 2V, IOUT = 200mA V VCE = 2V, IOUT = 100mA V Unit µA V VCE = 60V VCE = 2V, IOUT = 350mA IOUT = 100mA, IIN = 250µA IOUT = 200mA, IIN = 350µA IOUT = 350mA, IIN = 500µA Conditions V VCE = 2V, IOUT = 350mA IIN IR VF CIN Note: Input voltage and input current for BA12001 vary based on external resistor. Measurement circuits (1) Output leakage current IL OPEN (2) DC current transfer ratio Output saturation voltage OPEN hFE = IO II VCE (sat) (3) Input voltage VIN OPEN OPEN IL IO II VCE IO VI VCE (sat) VCE (4) Input current IIN OPEN (5) Diode reverse current IR (6) Diode forward voltage IF IR OPEN OPEN VI OPEN OPEN VR OPEN IF VF (7) Input capacitance CIN OPEN f Capacitance bridge LO HI OPEN TEST SIGNAL LEVEL 20mVrms VI Fig.4 BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs Application example RY LED (1) Relay driver (2) LED driver Fig.5 Application notes The BA12001B is a transistor array which can be directly coupled to a general logic circuit such as PMOS, CMOS, or TTL. A current limiting resistor needs to be connected in series with the input. The BA12003B / BF can be coupled directly to TTL or CMOS output (when operating at 5V). In order to limit the input current to a stable value, resistors are connected in series to each of the inputs. The BA12004B is designed for direct coupling to CMOS or PMOS output using a 6 to 15V power supply voltage. In order to limit the input current to a stable value, resistors are connected in series to each of the inputs. The load for each of these products should be connected between the driver output and the power supply. To protect the IC from excessive swing voltage, the COM pin (Pin 9) should be connected to the power supply. Fig.6 shows the configuration of the on-chip diode for surge absorption. In the construction of the surge-absorbing diode,there is an N-P junction between the N-layer (N-well + BL) and the substrate (P-sub) so that when the diode is on, current flows from the output pin to the substrate. In terms of the vertical construction, this diode is configured similar to a PNP transistor. When using the surge-absorbing diode, take appropriate measures regarding the thermal characteristics of the design considering the current that will be handled. Also, if motor back-rush current or other conditions that will result continued surge current to flow to the surge-absorbing diode can be foreseen, we strongly recommend connecting a Schottky barrier diode (or other type of diode with a low foward voltage) in parallel with the surge-absorbing diode to construct a bypass route for the surge current. OUT COM In-flow current to the surge-absorbing diode N+ P+ IDi N+ ISO Isub N-well B/L P-sub N+ ISO P P Fig.6 Vertical construction of the surge-absorbing diode BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs Electrical characteristic curves 1400 Other than BA12003BF 500 All series OUTPUT CURRENT : IOUT (mA) 500 When all circuits are on 400 350 300 Ta = 25˚C 200 Ta = 75˚C 100 110mA 64mA 10% 20% All series POWER DISSIPATION : Pd (mW) OUTPUT CURRENT : IO (mA) 1250 1200 1000 800 625 600 400 400 300 2ch 3ch BA12003BF 200 4ch 5ch 6ch 7ch 100 200 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 DUTY CYCLE : (%) 0 20 40 60 80 100 AMBIENT TEMPERATURE : Ta (˚C) DUTY CYCLE (%) Fig.7 Power dissipation vs. ambient temperature Fig.8 Output conditions (I) Fig.9 Output conditions (II) 500 The shaded range should never be exceeded under any circumstances 5000 DC CURRENT GAIN : hFE Ta = 25˚C VCE = 2.0V OUTPUT CURRENT : IOUT (mA) 500 IIN = 250µA 400 OUTPUT CURRENT: IOUT (mA) 400 350 300 2000 1000 500 300 Ta = −30˚C Ta = 25˚C 100 Ta = 80˚C 200 Max. usage conditions 200 100 Usage conditions range 200 100 10 0 10 20 30 40 50 20 50 100 200 500 1000 0 0 0.5 1.0 1.5 2.0 2.5 SUPPLY VOLTAGE: VCC (V) OUTPUT CURRET : IOUT (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Usage conditions range per circuit Fig.11 DC current transfer ratio vs. output current Fig.12 Output current vs. voltage between collector and emitter 500 IIN = 350µA 500 IIN = 500µA OUTPUT CURRENT : IOUT (mA) 20 OUTPUT CURRENT : IOUT (mA) 400 400 INPUT CURRENT : IIN (mA) 15 Ta = −25˚C Ta = 25˚C Ta = 75˚C 300 Ta = −30˚C 300 Ta = −30˚C 200 Ta = 25˚C 100 Ta = 80˚C 0 0 0.5 1.0 1.5 2.0 2.5 10 200 Ta = 25˚C 5 100 Ta = 80˚C 0 10 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) INPUT VOLTAGE : VIN (V) Fig.13 Output current vs. voltage between collector and emitter Fig.14 Output current vs. voltage between collector and emitter Fig.15 Input current vs. input voltage (BA12003B / BF) BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs 4 Ta = −25˚C 25 OUTPUT VOLTAGE : VOUT (V), VCE (V) 25 OUTPUT VOLTAGE : VCE OUT (V) VOUT = 20V RL = 68Ω 20 Ta = 75˚C Ta = 25˚C Ta = −25˚C VOUT = 20V RL = 68Ω 20 Ta = 75˚C Ta = 25˚C Ta = −25˚C INPUT CURRENT : IIN (mA) 3 Ta = 25˚C Ta = 75˚C 15 15 2 10 10 1 5 5 0 10 20 30 40 0 0 0.5 1 1.5 2 2.5 1 2 3 4 5 INPUT VOLTAGE : VIN (V) INPUT VOLTAGE : VIN (V) INPUT VOLTAGE : VIN (V), VI (V) Fig.16 Input current vs. input voltage (BA12004B) Fig.17 Output voltage vs. input voltage (BA12003B / BF) Fig.18 Output voltage vs. input voltage (BA12004B) External dimensions (Units : mm) BA12001B / BA12003B / BA12004B BA12003BF 10.0 ± 0.2 19.4 ± 0.3 16 9 16 6.5 ± 0.3 9 6.2 ± 0.3 7.62 3.2 ± 0.2 4.25 ± 0.3 1 8 1.5 ± 0.1 0.3 ± 0.1 2.54 0.5 ± 0.1 0° ~ 15° 0.11 1.27 0.4 ± 0.1 0.3Min. 0.15 DIP16 SOP16 0.15 ± 0.1 1 8 0.51Min. 4.4 ± 0.2
BA12003BF 价格&库存

很抱歉,暂时无法提供与“BA12003BF”相匹配的价格&库存,您可以联系我们找货

免费人工找货