BA3258HFP

Secondary Fixed Output LDO Regulator Series for Local Power Supplies Dual-output Secondary Fixed Output LDO Regulators for Local Power Supplies BA3258HFP, BA33D15HFP, BA33D18HFP No.09026EAT01 Description The BA3258HFP, BA33D15HFP, BA33D18HFP are fixed 2-output low-saturation regulators with a voltage accuracy at both outputs of 2%. These series incorporate both overcurrent protection and thermal shutdown (TSD) circuits in order to prevent damage due to output short-circuiting and overloading, respectively. Features 1) Output voltage accuracy: 2%. 2) Output current capacity: 1A (BA3258HFP), 0.5A (BA33D□□ Series) 3) A ceramic capacitor can be used to prevent output oscillation (BA3258HFP). 4) High Ripple Rejection (BA33D□□ Series) 5) Built-in thermal shutdown circuit 6) Built-in overcurrent protection circuit Applications FPDs, TVs, PCs, DSPs in DVDs and CDs Product Lineup Part Number BA3258HFP BA33D15HFP BA33D18HFP Output voltage Vo1 3.3 V 3.3 V 3.3 V Output voltage Vo2 1.5 V 1.5 V 1.8 V Current capability Io1 1A 0.5 A 0.5 A Current capability Io2 1A 0.5 A 0.5 A Package HRP5 HRP5 HRP5 Absolute Maximum Ratings BA3258HFP Parameter Symbol Applied voltage VCC Power dissipation Pd Operating Topr temperature range Ambient storage Tstg temperature Maximum junction Tjmax temperature *1 *2. Limits 15*1 2300*2 −30 to 85 −55 to 150 150 Units V mW ℃ ℃ ℃ BA33D□□ Series Parameters Applied voltage Power dissipation Operating temperature range Ambient storage temperature Maximum junction temperature Symbol VCC Pd Topr Tstg Tjmax Limits 18*1 2300*2 −25 to 105 −55 to 150 150 Units V mW ℃ ℃ ℃ Must not exceed Pd Derated at 18.4 mW/℃ at Ta>25℃ when mounted on a glass epoxy board (70 mm  70 mm  1.6 mm) Recommended Operating Conditions BA3258HFP Parameter Input power supply voltage Symbol VCC Io1 Io2 Min. 4.75 Typ. Max. Unit 14.0 1 1 V A A BA33D□□Series Parameter Input power supply voltage Symbol VCC Io1 Io2 Io2 Min. 4.1 Typ. Max. Unit 16.0 0.5 0.5 0.5 V A A A 3.3 V output current 1.5 V output current 3.3 V output current 1.5V output current 1.8 V output current www.rohm.co © 2009 ROHM Co., Ltd. All rights reserved. 1/8 2009.04 - Rev.A BA3258HFP, BA33D15HFP, BA33D18HFP Electrical Characteristics BA3258HFP (Unless otherwise specified, Ta = 25℃, Vcc = 5 V) Parameter Symbol Min. Typ. Bias current [3.3 V Output Block] Output voltage1 Minimum output voltage difference 1 Output current capacity 1 Ripple rejection 1 Input stability 1 Load stability 1 Temperature coefficient of output voltage 1*3 [1.5 V Output Block] Output voltage 2 Output current capacity 2 Ripple rejection 2 Input stability 2 Load stability 2 Temperature coefficient of output voltage 2*3 Vo2 Io2 R.R.2 Reg.I2 Reg.L2 Tcvo2 1.470 1.0 46 1.500 52 5 5 0.01 1.530 15 20 V A dB Io2 = 50 mA Vo1 ∆Vd1 Io1 R.R.1 Reg.I1 Reg.L1 Tcvo1 3.234 1.0 46 3.300 1.1 52 5 5 0.01 3.366 1.3 15 20 V V A dB Io1 = 50 mA IB 3 Technical Note Max. 5 Unit Conditions mA Io1 = 0 mA, Io2 = 0 mA Io1 = 1 A, Vcc = 3.8 V f=120 Hz,ein=0.5Vp-p,Io1=5mA mV Vcc = 4.75→14 V, Io1 = 5 mA mV Io1 = 5 mA→1A %/℃ Io1 = 5 mA, Tj = 0℃ to 85℃ f=120 Hz,ein=0.5Vp-p,Io2=5mA mV Vcc = 4.1→14 V, Io2 = 5 mA mV Io2 = 5 mA→1 A %/℃ Io2 = 5 mA, Tj = 0℃ to 125℃ *3: Design is guaranteed within these parameters. (No total shipment inspection is made.) BA33D□□ Series (Unless otherwise specified, Ta = 25℃, Vcc = 5 V) Parameter Symbol Min. Typ. Bias current [3.3V Output Block] Output voltage 1 Minimum output voltage difference 1 Output current capacity 1 Ripple rejection 1 Input stability 1 Load stability 1 Temperature coefficient of output voltage BA33D15HFP Vo2 output [1.5V Output Block] Output voltage 2 Output current capacity 2 Ripple rejection 2 Input stability 2 Load stability 2 Temperature coefficient of output voltage BA33D18HFP Vo2 output [1.8V Output Block] Output voltage 2 Output current capacity 2 Ripple rejection 2 Input stability 2 Load stability 2 Temperature coefficient of output voltage 2*3 2*3 1*3 Vo1 ∆Vd1 Io1 R.R.1 Reg.I1 Reg.L1 Tcvo1 3.234 － 0.5 3.300 0.25 68 5 30 0.01 Ib 0.7 Max. 1.6 3.366 0.50 30 75 - Unit Conditions mA Io1 = 0 mA, Io2 = 0 mA V V A dB f=120 Hz,ein =1Vp-p,Io1=100mA mV Vcc=4.1V→16V,Io1=250mA mV Io1= 0 mA→0.5 A %/℃ Io1 = 5 mA, Tj=0℃ to 125℃ Io1 = 250 mA Io1 = 250 mA, Vcc = 3.135 V Vo2 Io2 R.R.2 Reg.I2 Reg.L2 Tcvo2 1.470 0.5 - 1.500 74 5 30 0.01 1.530 30 75 - V A dB Io2 = 250 mA f=120 Hz,ein=1Vp-p,Io2=100mA mV Vcc =4.1V→16 V,Io2=250mA mV Io2 = 0 mA→0.5A %/℃ Io2 = 5 mA,Tj = 0℃ to 125℃ Vo2 Io2 R.R.2 Reg.I2 Reg.L2 Tcvo2 1.764 0.5 - 1.800 72 5 30 0.01 1.836 30 75 - V A dB Io2=250 mA f =120Hz,ein =1Vp-p,Io2=100mA mV Vcc = 4.1V→16V,Io2=250mA mV Io2 = 0 mA→0.5 A %/℃ Io2 = 5 mA, Tj = 0℃ to 125℃ *3: Design is guaranteed within these parameters. (No total shipment inspection is made.) www.rohm.co © 2009 ROHM Co., Ltd. All rights reserved. 2/8 2009.04 - Rev.A BA3258HFP, BA33D15HFP, BA33D18HFP BA3258HFP Electrical Characteristics Curves (Unless otherwise specified, Ta = 25℃, Vcc = 5V) 4.0 CIRCUIT CURRENT： Icc［ mA ］ 3.5 CIRCUIT CURRENT：IB［mA ］ CIRCUIT CURRENT：IB［mA ］ 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 SUPPLY VOLTAGE：Vcc［V］ 0 0.0 0.2 0.4 0.6 0.8 1.0 OUTPUT CURRENT：Io1［A］ 0 0.0 0.2 4 4 5 5 Technical Note 3 3 2 2 1 1 0.4 0.6 0.8 1.0 OUTPUT CURRENT：Io2［A］ Fig.1 Circuit Current (with no load) 4.0 3.5 OUTPUT VOLTAGE：Vo1［V］ Fig. 2 Circuit Current vs Load Current Io2 (Io1 = 0 1 A) 1.6 1.4 OUTPUT VOLTAGE：Vo2［V］ OUTPUT VOLTAGE：Vo1［V］ Fig. 3 Circuit Current vs Load Current Io2 (Io2 = 0  1 A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 SUPPLY VOLTAGE：Vcc［V］ 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 12 14 SUPPLY VOLTAGE：Vcc［V］ 0.0 0.5 1.0 1.5 2.0 2.5 OUTPUT CURRENT：Io1［A］ Fig. 4 Input Stability (3.3 V output with no load) INPUT/OUTPUT VOLTAGE DIFFERENCE ： ΔVd［V］ Fig. 5 Input Stability (1.5 V output with no load) 1.4 RIPPLE REJECTION：R.R.［dB］ 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 OUTPUT CURRENT：Io1［A］ 80 70 60 50 40 30 20 10 0 10 Fig. 6 Load Stability (3.3 V output) 1.6 1.4 OUTPUT VOLTAGE：Vo2［V］ 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 OUTPUT CURRENT：Io2［ A］ R.R.(1.5 V output) R.R.(3.3 V output) 100 1000 10000 FREQUENCY：f［Hz］ Fig. 7 Load Stability Fig. 8 I/O Voltage Difference (3.3 V output) (Vcc = 3.8 V, Io1 = 0  1 A) 1.506 1.504 OUTPUT VOLTAGE：Vo2［V］ Fig. 9 R.R. Characteristics (ein = 0.5 Vp-p, Io = 5 mA) 5.5 5.0 CIRCUIT CURRENT：IB［mA ］ 4.5 4.0 3.5 3.0 2.5 2.0 1.5 3.325 3.315 OUTPUT VOLTAGE：Vo1［V］ 3.305 3.295 3.285 3.275 3.265 3.255 3.245 -30 -15 0 15 30 45 60 75 TEMPERATURE：Ta［℃ ］ 1.502 1.500 1.498 1.496 1.494 1.492 1.490 -30 -15 0 15 30 45 60 75 TEMPERATURE：Ta［℃ ］ -30 -15 0 15 30 45 60 75 TEMPERATURE：Ta［℃ ］ Fig. 10 Output Voltage vs Temperature (3.3 V output) Fig. 11 Output Voltage vs Temperature (1.5 V output) Fig. 12 Circuit Current vs Temperature (Io = 0 mA) www.rohm.co © 2009 ROHM Co., Ltd. All rights reserved. 3/8 2009.04 - Rev.A BA3258HFP, BA33D15HFP, BA33D18HFP BA33D15HFP Electrical Characteristics Curves (Unless otherwise specified, Ta = 25℃, Vcc = 5V) 1.4 CIRCUIT CURRENT： Icc［ mA ］ CIRCUIT CURRENT：Icc［mA ］ 40 35 Technical Note 40 35 CIRCUIT CURRENT：Icc［mA ］ 30 25 20 15 10 5 0 0.0 0.1 0.2 0.3 0.4 0.5 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 12 14 16 18 SUPPLY VOLTAGE：Vcc［V］ 30 25 20 15 10 5 0 OUTPUT CURRENT：Io1［A］ 0.0 0.1 0.2 0.3 0.4 0.5 OUTPUT CURRENT：Io2［A］ Fig. 13 Circuit Current (with no load) 4.0 3.5 OUTPUT VOLTAGE：Vo1［V］ Fig. 14 Circuit Current vs Load Current Io1 (Io1 = 0  500 mA) 1.6 1.4 OUTPUT VOLTAGE：Vo2［V］ 1.2 1.0 0.8 0.6 0.4 0.2 0.0 OUTPUT VOLTAGE：VOUT［V］ Fig. 15 Circuit Current vs Load Current Io2 (Io2 = 0  500 mA) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 16 18 SUPPLY VOLTAGE：Vcc［V］ 0 2 4 6 8 10 12 14 16 18 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 SUPPLY VOLTAGE：Vcc［V］ OUTPUT CURRENT：Io1［A］ Fig. 16 Input Stability (3.3 V output, Io1 = 250 mA） INPUT/OUTPUT VOLTAGE DIFFERENCE ： ΔVd［V］ Fig. 17 Input Stability (1.5 V output, Io2 = 250 mA) 0.5 Fig. 18 Load Stability (3.3 V output) 80 RIPPLE REJECTION：R.R.［dB］ 1.6 1.4 OUTPUT VOLTAGE ：VOUT［V］ 70 Vo2(1.5V output) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 OUTPUT CURRENT：Io2［A］ 0.4 60 50 40 30 20 10 0 Vo1(3.3V output) 0.3 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 OUTPUT CURRENT：Io1［A］ 100 1000 FREQUENCY：f［Hz］ 10000 Fig. 19 Load Stability (1.5 V output) 3.45 3.40 3.35 3.30 3.25 3.20 3.15 -25 -10 5 20 35 50 65 80 95 TEMPERATURE：Ta［℃ ］ Fig. 20 I/O Voltage Difference (Vcc = 3.135 V, 3.3 V output) 1.60 Fig. 21 R.R. Characteristics (ein = 1 Vp-p, Io = 100 mA) 1050 950 OUTPUT VOLTAGE：Vo1［V］ 1.55 CIRCUIT CURRENT：Icc［mA ］ -25 -10 5 20 35 50 65 80 95 OUTPUT VOLTAGE：Vo2［V］ 850 750 650 550 450 350 250 -25 -5 15 35 55 75 95 1.50 1.45 1.40 TEMPERATURE：Ta［℃ ］ TEMPERATURE：Ta［℃ ］ Fig. 22 Output Voltage vs Temperature (3.3 V output) Fig. 23 Output Voltage vs Temperature (1.5 V output) Fig. 24 Circuit Current vs Temperature (Io = 0 mA) www.rohm.co © 2009 ROHM Co., Ltd. All rights reserved. 4/8 2009.04 - Rev.A BA3258HFP, BA33D15HFP, BA33D18HFP Block Diagrams / Standard Example Application Circuits BA3258HFP VO1 5 3.3V CO1 1F Technical Note Current Limit Pin No. 1 2 3 4 5 FIN Pin name Vcc V02_S GND Vo2 Vo1 GND VO2 4 Current Limit GND FIN 1.5V CO2 1F GND 3 2 V02_S Thermal Shutdown Function Power supply pin Output voltage monitor pin GND pin 1.5 V output pin 3.3 V output pin GND pin TOP VIEW PIN VREF Vcc 1 VIN CIN 3.3F Vcc (1 Pin) Vo1 (5 Pin) Vo2 (4 Pin) External capacitor setting range Approximately 3.3 F 1 F to 1000 F 1 F to 1000 F 12345 Fig.25 BA3258HFP Block Diagram BA33D□□ Series GND(Fin) Vcc Reference Voltage Current Limit Vcc HRP5 Sat. Prevention Pin No. 1 2 3 4 5 FIN Pin name Vcc N.C. GND Vo1 Vo2 GND Function Power supply pin N.C. pin GND pin 3.3 V output pin 1.5 V/1.8 V output pin GND pin TOP VIEW Vcc Vcc *The N.C. pin is not electrically connected internally Thermal Shut Down Current Limit PIN Sat. Prevention Vcc (1 Pin) Vo1 (4 Pin) Vo2 (5 Pin) Vo2 5 Co 10F External capacitor setting range Approximately 3.3 F 10 F to 1000 F 10 F to 1000 F 12345 Vcc 1 1F 2 N.C. GND 3 Vo1 4 Co 10F HRP5 Fig.26 BA33D□□ Series Block Diagram Input / Output Equivalent Circuits BA3258HFP Vcc Vcc BA33D□□ Series Vcc Vo2 Vo1 Vo2_S Vo1/Vo2 Fig. 27 BA3258HFP Input / Output Equivalent Circuit Fig. 28 BA33D□□ Series Equivalent Circuit Diagrams www.rohm.co © 2009 ROHM Co., Ltd. All rights reserved. 5/8 2009.04 - Rev.A BA3258HFP, BA33D15HFP, BA33D18HFP Technical Note Thermal Design If the IC is used under excessive power dissipation conditions, the chip temperature will rise, which will have an adverse effect on the electrical characteristics of the IC, such as a reduction in current capability. Furthermore, if the temperature exceeds Tjmax, element deterioration or damage may occur. Implement proper thermal designs to ensure that the power dissipation is within the permissible range in order to prevent instantaneous IC damage resulting from heat and maintain the reliability of the IC for long-term operation. Refer to the power derating characteristics curves in Fig. 29.  Power Consumption (Pc) Calculation Method *Vcc: Applied voltage Vcc  Power consumption of 3.3V power transistor: I 3.3 V output Io2: Load current on Vo2 side Vcc I Pc1 = (Vcc − 3.3)  Io1 Icc: Circuit current Vo1 Power Tr ower  Power consumption of Vo2 power transistor: * The Icc (circuit current) varies with the load. Controller Vcc Pc2 = (Vcc − Vo2)  Io2 (See reference data in Figs. 2, 3, 14, and 15.) I Vo2 Power Tr  Power consumption due to circuit current: Icc 1.5 V output or Pc3 = Vcc  Icc GND 1.8 V output →Pc = Pc1 + Pc2 + Pc3 Refer to the above and implement proper thermal designs so that the IC will not be used under excessive power dissipation conditions under the entire operating temperature range. P O1 O2 Io1: Load current on Vo1 side  Calculation example (BA33D15HFP) Example: Vcc = 5V, Io1 = 200mA, and Io2 = 100mA  Power consumption of 3.3V power transistor: Pc1 = (Vcc − 3.3)  Io1 = (5 − 3.3)  0.2 = 0.34W  Power consumption of 1.5V power transistor: Pc2 = (Vcc − 1.5)  Io2 = (5 − 1.5)  0.2 = 0.35W  Power consumption due to circuit current: Pc3 = Vcc  Icc = 5  0.0085 = 0.0425 (W) (See Figs. 14 and 15) Implement proper thermal designs taking into consideration the dissipation at full power consumption (i.e., Pc1 + Pc2 + Pc3 = 0.34 + 0.35 + 0.0425 = 0.7325W). Explanation of External Components  BA3258HFP 1) Pin 1 (Vcc pin) Connecting a ceramic capacitor with a capacitance of approximately 3.3F between Vcc and GND as close to the pins as possible is recommended. 2) Pins 4 and 5 (Vo pins) Insert a capacitor between the Vo and GND pins in order to prevent output oscillation. The capacitor may oscillate if the capacitance changes as a result of temperature fluctuations. Therefore, it is recommended that a ceramic capacitor with a temperature coefficient of X5R or above and a maximum capacitance change (resulting from temperature fluctuations) of 10% be used. The capacitance should be between 1F and 1,000 F. (Refer to Fig. 30)  BA33D□□ Series 1) Pin 1 (Vcc pin) Insert a 1F capacitor between Vcc and GND. The capacitance will vary depending on the application. Check the capacitance with the application set and implement designing with a sufficient margin. Pins 4 and 5 (Vo pins) 2) Insert a capacitor between the Vo and GND pins in order to prevent oscillation. The capacitance may vary greatly with temperature changes, thus making it impossible to completely prevent oscillation. Therefore, use a tantalum aluminum electrolytic capacitor with a low ESR (Equivalent Serial Resistance). The output will oscillate if the ESR is too high or too low, so refer to the ESR characteristcs in Fig. 31 and operate the IC within the stable operating region. If there is a sudden load change, use a capacitor with higher capacitance. A capacitance between 10F and 1,000F is recommended. POWER DISSIPATION：Pd ［W］ 10 9 8 (3) 7.3 W 7 6 (2) 5.5 W 5 4 3 (1) 2.3 W 2 1 0 0 25 Board size: 70 mm  70  1.6 mm (with a thermal via incorporated by the board) Board surface area: 10.5 mm  10.5 mm (1) (2) 2-layer board (Backside copper foil area: 15 mm  15mm) 2-layer board (Backside copper foil area: 70 mm  70 mm) 10.0 5.0 ESR [Ω] 2.0 1.0 0.5 0.2 不安定領域 Unstable region (3) 4-layer board (Backside copper foil area: 70 mm  70mm) ESR [Ω] 10.0 5.0 4.0 2.0 1.0 0.5 0.2 0.15 0.1 0.05 0.02 0.01 Unstable region 不安定領域 Stable region 安定領域 0.1 0.05 50 75 100 125 150 Stable region 安 定領域 Unstable region 不安定領域 0.02 0.01 AMBIENT TEMPERATURE：Ta［℃］ 0 200 400 600 Io [mA] 800 1000 0 200 400 600 Io [mA] 800 1000 Fig. 29 Thermal Derating Curves Fig. 30 BA3258HFP ESR characteristics Fig. 31 BA33D□□ Series ESR www.rohm.co © 2009 ROHM Co., Ltd. All rights reserved. 6/8 2009.04 - Rev.A BA3258HFP, BA33D15HFP, BA33D18HFP Technical Note Notes for use 1) Absolute maximum ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses. 2) GND voltage The potential of GND pin must be minimum potential in all operating conditions. 3) Thermal Design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. 4) Inter-pin shorts and mounting errors Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together. 5) Actions in strong electromagnetic field Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction. 6) Testing on application boards When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when transporting or storing the IC. 7) Regarding input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used. 8) Ground Wiring Pattern When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external components, either. 9) Thermal Shutdown Circuit (TSD) This IC incorporates a built-in thermal shutdown circuit for protection against thermal destruction. Should the junction temperature (Tj) reach the thermal shutdown ON temperature threshold, the TSD will be activated, turning off all output power elements. The circuit will automatically reset once the chip's temperature Tj drops below the threshold temperature. Operation of the thermal shutdown circuit presumes that the IC's absolute maximum ratings have been exceeded. Application designs should never make use of the thermal shutdown circuit. 10) Overcurrent protection circuit An overcurrent protection circuit is incorporated in order to prevention destruction due to short-time overload currents. Continued use of the protection circuits should be avoided. Please note that the current increases negatively impact the temperature. 11) Damage to the internal circuit or element may occur when the polarity of the Vcc pin is opposite to that of the other pins in applications. (I.e. Vcc isshorted with the GND pin while an external capacitor is charged.) Use a maximum capacitance of 1000 mF for the output pins. Inserting a diode toprevent back-current flow in series with Vcc or bypass diodes between Vcc and each pin is recommended. Bypass diode Resistor 抵抗 （端子 ） （Pin AA） （端子 B） （Pin B） C Transistor (NPN) ) トランジスタ(NPN ～ ～ Diode for preventing back current flow B (Pin B) C ～ ～ E GND N VCC ～ ～ P＋ N N x B E GND Output pin P＋ N N P substrate P 基板 P P＋ N Ｎ Ｐ P N P＋ Ｎ Parasitic elements or transistors (Pin A) P寄生素子 arasitic elements P 基板 GND Parasitic elements GND GND Fig32 Bypass diode Fig. 33 Example of Simple Bipolar IC Architecture www.rohm.co © 2009 ROHM Co., Ltd. All rights reserved. 7/8 2009.04 - Rev.A ～ ～ BA3258HFP, BA33D15HFP, BA33D18HFP ●Ordering part number Technical Note B A 3 Part No. 3528 33D15 33D18 5 2 8 H F P - T R Part No. Package HFP:HRP5 Packaging and forming specification TR: Embossed tape and reel (HRP5) HRP5 9.395±0.125 (MAX 9.745 include BURR) 1.017±0.2 Tape 1.905±0.1 Embossed carrier tape 2000pcs TR direction the at right when you ( The on the leftishand1pin of product is thethe upperthe right hand hold ) reel and you pull out tape on 8.82 ± 0.1 (5.59) Quantity Direction of feed (7.49) 0.835±0.2 1.523±0.15 10.54±0.13 8.0±0.13 1pin 1.2575 1 2 3 4 5 5.5° 4.5°+4.5° − +0.1 0.27 −0.05 1.72 0.73±0.1 0.08 S S 0.08±0.05 Direction of feed (Unit : mm) Reel ∗ Order quantity needs to be multiple of the minimum quantity. www.rohm.co © 2009 ROHM Co., Ltd. All rights reserved. 8/8 2009.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. R0039A