BAS40-04HMFHT116

Schottky Barrier Diode Datasheet BAS40-04HMFH AEC-Q101 Qualified Land Size Figure (Unit : mm) Dimensions (Unit : mm) Application 1.9 Small current rectification 2.4 Features 1.0MIN 4B 1) Small mold type SOT-23 (SOT-23) 0.8MIN fo r Structure 2) High reliability (3) 3) Low VF ROHM : SSD3 JEDEC : SOT-23 JEITA : - (1) Anode (2) Cathode (2) e N co ew m m D e es n d ig e ns d (1) (3) Cathode/ Anode Taping Dimensions (Unit : mm) Construction Silicon epitaxial planar type T116 Absolute Maximum Ratings (Ta= 25°C) Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 40 V Reverse voltage VR Direct reverse voltage 40 V IF Direct current, per diode 120 mA Repetitive peak forward current IFRM t ≦1s, Duty≦0.5, per diode 120 mA Non-repetitive forward surge current IFSM Square wave, tp