BAV99

BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 ∗This product is available only outside of Japan. Application Ultra high speed switching External dimensions (Unit : mm) 2.9±0.2 2.4±0.2 1.3+0.2 −0.1 Features 1) Small surface mounting type. (SSD3) 2) High speed. (trr=1.5ns Typ.) 3) Four types of circuit configurations are available. 1.9±0.2 0.95 0.95 (1) (2) 0.95 +0.2 −0.1 0.45±0.1 0~0.1 0.2Min. (3) Construction Silicon epitaxial planar 0.4 +0.1 −0.05 +0.1 0.15 −0.69 Each lead has same dimensions Marking (Type No.) Product name BAV70 BAW56 BAV99 (Ex.) BAV70 Type No. RA4 RA1 RA7 Equivalent circuits BAV70 RA4 BAW56 BAV99 1/3 BAV70 / BAW56 / BAV99 Diodes Absolute maximum ratings (Ta=25°C) Type Peak reverse voltage VRM (V) 75 85 85 DC reverse voltage VR (V) 70 70 75 Peak forward current IFM (mA) 450 450 450 Mean rectifying current IF (mA) 215 215 215 Surge current (1µs) Isurge (A) 4 4 4 Storage Power Junction dissipation temperature temperature (TOTAL) Tj (°C) Tstg (°C) Pd (mW) 300 225 300 150 150 150 −55 to +150 −55 to +150 −55 to +150 P / N Type BAV70 BAW56 BAV99 N P N Electrical characteristics (Ta=25°C) Forward voltage Type VF (V) Max. 1.25 1.25 1.25 Cond. IF (mA) 150 150 150 Reverse current IR (µA) Max. 2.5 1.0 1.0 Cond. VR (V) 70 75 75 Capacitance between terminals CT (pF) Max. 1.5 2.0 1.5 Cond. VR (V) 0 0 0 f (MHz) 1 1 1 trr (ns) Max. 4 4 4 Reverse recovery time Cond. VR (V) 10 10 10 IF (mA) 10 10 10 BAV70 BAW56 BAV99 Electrical characteristic curves (Ta=25°C) 125 (%) Max. 50 FORWARD CURRENT : IF (mA) 1000 Ta=100°C REVERSE CURRENT : IR (nA) POWER DISSIPATION : Pd / Pd 100 20 10 5 2 1 0.5 0.2 Ta=85°C 50°C 25°C 0°C −30°C 100 75°C 50°C 25°C 75 10 50 1 0°C −25°C 25 0.1 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta (°C) 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0 10 20 30 40 50 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.1 Power attenuation curve Fig.2 Forward characteristics (P Type) Fig.3 Reverse characteristics (P Type) 50 CAPACITANCE BETWEEN TERMINALS : CT (pF) 1000 FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA) Ta=100°C 75°C 50°C f=1MHz 4 20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ta=85°C 50°C 25°C 0°C −30°C 100 10 25°C 0°C −25°C 1 2 P Type 0.1 N Type 0 0.01 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12 14 16 18 20 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.4 Forward characteristics (N Type) Fig.5 Reverse characteristics (N Type) Fig.6 Capacitance between terminals characteristics 2/3 BAV70 / BAW56 / BAV99 Diodes 10 VR=6V REVERSE RECOVERY TIME : trr (ns) 0.01µF D.U.T 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 N Type 8 9 10 OUTPUT 100ns PULSE GENERATOR OUTPUT 50Ω 5Ω SAMPLING 50Ω OSCILLOSCOPE P Type INPUT FORWARD CURRENT : IF (mA) trr 0 0.1IR IR Fig.7 Reverse recovery time Fig.8 Reverse recovery time (trr) measurement circuit 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0