BC847CT116

BC847B / BC847C Transistors NPN General Purpose Transistor BC847B / BC847C !Features 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. !External dimensions (Units : mm) 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 !Package, marking, and Packaging specifications BC847C Packaging type SST3 SST3 Marking G1F G1G Code T116 T116 Basic ordering unit (pieces) 3000 3000 (2) (1) 2.4±0.2 BC847B +0.2 1.3 −0.1 Part No. 0.45±0.1 0.95 0.95 0~0.1 0.2Min. (3) +0.1 0.15 −0.06 +0.1 0.4 −0.05 All terminals have the same dimensions ROHM : SST3 (1) Emitter (2) Base (3) Collector !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 6 V IC 0.1 A Parameter Collector current Collector power dissipation 0.2 PC ∗ W 0.35 Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗ When mounted on a 7×5×0.6mm ceramic board. !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 50 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 45 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=50µA − − 15 nA VCB=30V µA VCB=30V, Ta=150°C Parameter Collector cutoff current ICBO Conditions − − 5 − − 0.25 − − 0.6 0.58 − 0.77 V 200 − 450 − VCE/IC=5V/2mA BC847B 420 − 800 − VCE/IC=5V/2mA BC847C fT − 200 − MHz Collector output capacitance Cob − 3 − pF VCB=−10V, IE=0, f=1MHz Emitter input capacitance Cib − 8 − pF VEB=0.5V, IC=0, f=1MHz Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(on) DC current transfer ratio Transition frequency hFE V IC/IB=10mA/0.5mA IC/IB=100mA/5mA VCE/IC=5V/10mA VCE=5V, IE=−20mA, f=100MHz !Electrical characteristic curves The electrical characteristic curves for these products are the same as those of UMT222A, SST222A, MMST2222A and PN2222A. 1/1