BC848BWT106

BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B zExternal dimensions (Unit : mm) BC848BW SOT-323 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 0.7±0.1 (3) 2.1±0.1 (2) 1.25±0.1 (1) 0~0.1 0.1~0.4 zFeatures 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. +0.1 0.3 −0 0.15±0.05 All terminals have same dimensions ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector BC848B, BC848C SOT-23 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 2.4±0.2 (2) 1.3 +0.2 −0.1 (1) 0~0.1 0.2Min. (3) +0.1 0.4 −0.05 +0.1 0.15 −0.06 All terminals have same dimensions ROHM : SST3 (1) Emitter (2) Base (3) Collector zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power BC848BW dissipation BC848B Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 30 30 5 0.1 0.2 0.2 0.35 150 −65~+150 Unit V V V A W W W ∗ °C °C ∗ When mounted on a 7×5×0.6mm ceramic board. zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Symbol BVCBO BVCEO BVEBO ICBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage DC current transfer ratio Transition frequency Collector output capacitance Collector output capacitance VBE(on) hFE fT Cob Cib Min. 30 30 5 − − − − 0.58 200 − − − Typ. Max. Unit Conditions IC=50µA V − − IC=1mA V − − IE=50µA V − − nA VCB=30V 100 − µA VCB=30V, Ta=150°C 5 − IC/IB=10mA/0.5mA 0.25 − V IC/IB=100mA/5mA 0.6 − VCE/IC=5V/10mA 0.77 V − − VCE/IC=5V/2mA 450 − 200 MHz VCE=5V, IE=−20mA, f=100MHz − 3 pF VCB=10V, IE=0, f=1MHz − 8 pF VEB=0.5V, IE=0, f=1MHz − (SPEC-C22) Rev.A 1/5 BC848BW / BC848B Transistors zPackaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) BC848BW UMT3 G1K T106 3000 BC848B SST3 G1K T116 3000 zElectrical characteristic curves 10.0 IC−COLLECTOR CURRENT (mA) Ta=25°C 80 1.2 1.0 0.8 IC-COLLECTOR CURRENT (mA) 100 0.6 60 40 0.4 0.2 0.1 20 IB=0mA 0 2.0 0 1.0 VCE−COLLECTOR-EMITTER VOLTAGE (V) Fig.1 Grounded emitter output characteristics ( ) 35 30 8.0 25 6.0 20 15 4.0 10 2.0 5 IB=0µA Ta=25°C 0 0 2.0 1.0 VCE-COLLECTOR-EMITTER VOLTAGE (V) Fig.2 Grounded emitter output characteristics ( ) 1000 hFE-DC CURRENT GAIN Ta=25°C VCE=10V 1V 100 10 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 5V 100 1000 Fig.3 DC current gain vs. collector current ( ) hFE-DC CURRENT GAIN 1000 VCE=5V Ta=125°C Ta=25°C Ta=−55°C 100 10 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 1000 Fig.4 DC current gain vs. collector current ( ) Rev.A 2/5 BC848BW / BC848B Transistors 1000 hFE-AC CURRENT GAIN Ta=25°C VCE=5V f=1kHz 100 10 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) 10 100 0.16 Ta=25°C IC/IB=10 0.12 0.08 0.04 0 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 Fig.6 Collector-emitter saturation voltage vs. collector current 1000 Ta=25°C IC/IB=10 Ta=25°C IC/IB=10 1.8 1.6 1.2 0.8 0.4 0 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 1000 Ta=25°C IC/IB=10 1.6 1.2 0.8 0.4 0 0.1 100 Fig.7 Base-emitter saturation voltage vs. collector current Ta=25°C VCE=5V 1.8 VBE(ON)BASE EMITTER VOLTAGE (V) VCE(SAT)COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.18 VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V) Fig.5 AC current gain vs. collector current 1.0 10 IC-COLLECTOR CURRENT (mA) 100 Fig.8 Grounded emitter propagation characteristics 1000 40V Ta=25°C IC=101B1=101B2 100 10 1.0 VCC=40V 100 10 IC-COLLECTOR CURRENT (mA) Fig.9 Turn-on time vs. collector current 100 tS-STORAGE TIME (ns) t r -RISE TIME (ns) ton-TURN ON TIME (ns) 3V 10 1.0 10 IC-COLLECTOR CURRENT (mA) Fig.10 Rise time vs. collector current VCE=15V 100 100 10 1.0 10 IC-COLLECTOR CURRENT (mA) 100 Fig.11 Storage time vs. collector current Rev.A 3/5 BC848BW / BC848B CAPACITANCE (pF) t f -FALL TIME (ns) 100 10 IC-COLLECTOR CURRENT (mA) 1 10 REVERSE BIAS VOLTAGE (V) 100 100 h PARAMETER NORMALIZED TO 1mA CURRENT GAIN-BANDWIDTH PRODUCT (MHz) Cob 500 Fig.15 Gain bandwidth product vs. collector current Ta=25°C VCE=6V f=270Hz hoe hre 10 hie hre 1 hfe hfe IC=1mA hie=7.8kΩ hfe=280 hie hre=4.5×10−5 hoe=7.5µS hoe 0.1 0.1 1 10 IC-COLLECTOR CURRENT (mA) Fig.14 Gain bandwidth product 10n VCB=30V 1n 100P 10P 1P 0.1P 0 4 2 10k Fig.18 Noise vs. collector current 100k 25 50 75 100 125 TA-AMBIENT TEMPERATURE (°C) 150 Fig.17 Collector cutoff current 100k dB 12 B 8d B 5d 6 500 Ta=25°C VCE=5V f=10Hz dB 8 10 100 IC-COLLECTOR CURRENT (mA) B NF NOISE FIGURE (dB) 0.5 0.5 =1 NF 10 1k f-FREQUENCY (Hz) 300MHz 200MHz 100MHz 5.0 3d Ta=25°C VCE=5V IC=100µA RS=10kΩ 100 100 Ta=25°C 400MHz Fig.16 h parameter vs. collector current 12 0 10 50 50 100MHz 200MHz 300MHz 400MHz Fig.13 Input/output capacitance vs. voltage Ta=25°C VCE=5V 10 0.5 1.0 10 100 IC-COLLECTOR CURRENT (mA) Cib 10 1 0.5 100 Fig.12 Fall time vs. collector current 1000 Ta=25°C f=1MHz ICBO-COLLECTOR CUTOFF CURRENT (A) 10 1.0 100 Ta=25°C VCC=40V IC=101B1=101B2 RS-SOURCE RESISTANCE (Ω) 1000 VCE COLLECTOR-EMITTER VOLTAGE (V) Transistors 10k 1k 100 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) 10 Fig.19 Noise characteristics ( ) Rev.A 4/5 BC848BW / BC848B Transistors B B RS-SOURCE RESISTANCE (Ω) 8d B ) 5d Fig.21 Noise characteristics ( 10 3d 0.1 1 IC-COLLECTOR CURRENT (mA) B 100 0.01 1d 1k Ta=25°C VCE=5V 10k f=10kHz = NF dB B RS-SOURCE RESISTANCE (Ω) B 12 8d Fig.20 Noise characteristics ( ) dB 10 =1 0.1 1 IC-COLLECTOR CURRENT (mA) Ta=25°C VCE=5V f=1kHz 10k NF B 100 0.01 100k B B B 1k 100k 3d dB 8d d =1 B 10k Ta=25°C VCE=5V f=30Hz 5d 12 5d 3d NF RS-SOURCE RESISTANCE (Ω) 100k 1k 100 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) Fig.22 Noise characteristics ( Rev.A 10 ) 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1