BC857B_11

PNP small signal transistor BC857B Features 1) Ideal for switching and AF amplifier applications. 2) High current gain. Dimensions (Unit : mm) BC857B 2.9 0.4 0.95 0.45 Packaging specifications Package Type BC857B Code Basic ordering unit (pieces) Taping T116 3000 (1)Emitter (2)Base (3)Collector (3) (2) (1) 0.95 0.95 1.9 1.3 2.4 0.15 Each lead has same dimensions Abbreviated symbol : G3F Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −50 −45 −5 −0.1 0.20 0.35 150 −65 to 150 Unit V V V A W W ∗ °C °C ∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE Electrical characteristics (Ta=25C) Parameter Symbol Min. −45 −50 −5 − − − −0.6 210 − − − Typ. − − − − − − − − 250 − − Max. − − − −0.015 −0.3 −0.65 −0.75 480 − 4.5 −4 Unit V V V IC= −1mA IC= −50μA IE= −50μA VCB= −30V IC/IB= −10mA/ −0.5mA IC/IB= −100mA/ −5mA VCE= −5V, IC= −10mA VCE= 5V, IC= −2mA VCE= −5V, IE= 20mA, f=100MHz VCB= −10V, f=1MHz VCB= −30V Conditions Collector-emitter breakdown voltage BVCEO Collector-base breakdown voltage Emitter-base breakdown voltage Collector-base cutoff current Collector-emitter saturation voltage Base-emitter voltage DC current transfer ratio Transition frequency Collector outpu capacitance Collector-base cutoff current BVCBO BVEBO ICBO VCE(sat1) VCE(sat2) VBE(on) hFE fT Cob ICBO μA V V V − MHz pF μA www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.11 - Rev.B 0.2Min. BC857B Electrical characteristics curves -100 -120 VCE=-5V IB=-500uA -450uA -400uA -350uA -300uA Data Sheet -15 Ta=25ºC IB=-50uA IB=-45uA IB=-40uA COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) -100 -80 COLLECTOR CURRENT : IC (mA) -10 Ta=125ºC 75ºC 25ºC -55ºC -10 IB=-35uA IB=-30uA IB=-25uA IB=-20uA IB=-250uA -60 -40 -20 0 0 -2 -4 IB=0A IB=-200uA IB=-150uA IB=-100uA IB=-50uA -1 -5 IB=-15uA IB=-10uA IB=-5uA -0.1 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 BASE TO EMITTER VOLTAGE : VBE (V) Fig 1. Grounded Emitter Propagation Characteristics 1000 Ta=25ºC Ta=25ºC -8 -10 0 0 -0.4 -0.8 -1.2 -1.6 IB=0A -6 -2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig 2. Grounded Emitter Output Characteristics (I) 1000 VCE=-5V -1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig 3. Grounded Emitter Output Characteristics (II) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25ºC DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 100 VCE=-5V -3V -1V 100 Ta=125ºC 75ºC 25ºC -55ºC IC/IB=50/1 20/1 10/1 -0.1 10 -0.1 -1 -10 -100 10 -0.1 -1 -10 -100 COLLECTOR CURRENT : IC (mA) Fig 4. DC Current Gain vs. Collector Current (I) -1 1000 COLLECTOR CURRENT : IC (mA) Fig 5. DC Current Gain vs. Collector Current (II) -0.01 -0.1 -1 -10 -100 COLLECTOR CURRENT : IC (mA) Fig 6. Collector Saturation Voltage vs. Collector Current (I) 20 TRANSITION FREQUENCY : fT (MHz) IC/IB=20/1 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25°C VCE= −12V Cib 500 10 Co b Ta=25°C f=1MHz IE=0A IC=0A -0.1 Ta=125ºC 75ºC 25ºC -55ºC 200 5 100 2 50 0.5 1 2 5 10 20 50 100 -0.01 -0.1 −0.5 −1 −2 −5 −10 −20 -1 -10 -100 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) Fig 7. Collector Saturation Voltage vs. Collector Current (II) Fig.8 Gain bandwidth product vs. emitter current COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.11 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A