BC858BT116

BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B zExternal dimensions (Unit : mm) zFeatures 1) BVCEO < -30V (IC=-1mA) 2) Complements the BC848B / BC848BW. BC858BW SOT-323 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 BC858B Pakaging type UMT3 G3K T106 SST3 G3K T116 3000 3000 Marking Code Basic ordering unit (pieces) (3) 00.1 0.3+0.1 -0 ROHM : UMT3 EIAJ : EC-70 0.15±0.05 All terminals have same dimensions 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zAbsolute maximum ratings (Ta=25°C) (2) Unit −30 −30 VEBO IC −5 −0.1 V V V A 0.2 Junction temperature Storage temperature W 0.35 150 −65 to +150 Tj Tstg 1.3+0.2 - 0.1 Limits VCBO VCEO 0~0.1 2.4±0.2 Symbol PC Collector power dissipation 0.45±0.1 0.95 0.95 (1) Parameter (1) Emitter (2) Base (3) Collector BC858B SOT-23 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 0.7±0.1 0.1~0.4 BC858BW 1.2±0.1 zPackage, marking and packaging specifications Paet No. 0.2 (2) 2.1±0.1 (1) 0.2Min. (3) 0.4 +0.1 −0.05 ROHM : SST3 ∗ +0.1 0.15 −0.06 All terminals have same dimensions (1) Emitter (2) Base (3) Collector ˚C ˚C ∗ When mounted on 7 × 5 × 0.6 mm ceramic board. zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO −30 −30 −5 − − − − − − − V V V − − − −0.6 Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage DC current transfer ratio VBE(on) hFE Transition frequency fT Output capacitance Cob − − − −100 4 −0.3 nA µA − − −0.65 −0.75 V V 210 − 480 − − − 250 4.5 − − MHz pF V Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −30V VCB= −30V, Ta=150°C IC/IB= −10mA/−0.5mA IC/IB= −100mA/−5mA VCE/IC= −5V/−10mA VCE/IC= −5V/−2mA VCE= −5V , IE=20mA , f=100MHz VCB= −10V , IE=0 , f=1MHz zElectrical characteristics curves 0.7 10.0 Ta=25˚C 0.6 0.5 80 0.4 60 0.3 40 0.2 20 0.1 IB=0mA 0 2.0 0 1.0 COLLECTOR-EMITTER VOLTAGE : VCE(V) Fig.1 Grounded emitter output characteristics ( I ) 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 100 8.0 Ta=25˚C 45 40 35 6.0 30 25 4.0 2.0 20 15 10 5 1B=0µA 0 2.0 0 1.0 COLLECTOR-EMITTER VOLTAGE : VCE(V) Fig.2 Grounded emitter output characteristics ( II ) Rev.A 1/4 BC858BW / BC858B Transistors 500 Ta=25˚C DC CURRENT GAIN : hFE VCE=10V 5V 100 1V 10 5 0.1 1.0 10 COLLECTOR CURRENT : IC(mA) 100 1000 Fig.3 DC current gain vs. collector current ( I ) 500 VCE=5V Ta=125˚C DC CURRENT GAIN : hFE Ta=25˚C 100 Ta=-55˚C 10 5 0.1 1.0 10 COLLECTOR CURRENT : IC(mA) 100 1000 Fig.4 DC current gain vs. collector current ( II ) 500 AC CURRENT GAIN : hFE Ta=25˚C VCE=5V f=1kHz 100 10 5 0.01 0.1 1.0 COLLECTOR CURRENT : IC(mA) 10 100 Fig.5 AC current gain vs. collector current Rev.A 2/4 BC858BW / BC858B 0.2 0.1 1.0 10 COLLECTOR CURRENT : IC(mA) 100 40V 10 100 COLLECTOR CURRENT : IC(mA) Fig.9 Turn-on time vs. collector current 100 10 1.0 0.4 0.2 0 0.1 1.0 10 COLLECTOR CURRENT : IC(mA) 10 COLLECTOR CURRENT : IC(mA) 100 Fig.12 Fall time vs. collector current 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 100 1.0 10 100 COLLECTOR CURRENT : IC(mA) Fig.8 Grounded emitter propagation characteristics 1000 Ta=25˚C VCC=40V IC / IB=10 Ta=25˚C IC=10IB1=10IB2 15V 40V VCE=3V 100 10 1.0 10 COLLECTOR CURRENT : IC(mA) 10 COLLECTOR CURRENT : IC(mA) Ta=25˚C f=1MHz Cib 10 Cob 1 10 REVERSE BIAS VOLTAGE(V) Fig.13 Input/output capacitance vs. voltage 50 100 Fig.11 Storage time vs. collector current 50 100 1 0.5 10 1.0 100 Fig.10 Rise time vs. collector current CAPACITANCE (pF) Ta=25˚C VCC=40V IC=10IB1=10IB2 FALL TIME : tf(ns) 1000 0.6 100 VCC=3V 10 1.0 0.8 1000 Ta=25˚C IC / IB=10 15V 1.0 RISE TIME : tr(ns) TURN ON TIME : ton(ns) 100 1.2 Fig.7 Base-emitter saturation voltage vs. collector current Fig.6 Collector-emitter saturation voltage vs. collector current 1000 1.4 Ta=25˚C VCE=10V 1.6 STORAGE TIME : tS(ns) 0 0.1 1.8 Ta=25˚C IC / IB=10 1.6 BASE EMITTER VOLTAGE : VBE(ON)(V) 0.3 1.8 COLLECTOR-EMITTER VOLTAGE : VCE(V) Ta=25˚C IC / IB=10 BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) Transistors Ta=25˚C 300MHz 100MHz 200MHz 300MHz 10 200MHz 1.0 0.5 0.5 100MHz 1 10 100 500 COLLECTOR CURRENT : IC(mA) Fig.14 Gain bandwidth product Rev.A 3/4 BC858BW / BC858B Ta=25˚C VCE=5V 100 10 0.5 1 100 10 COLLECTOR CURRENT : IC(mA) Ta=25°C VCE=6V f=270Hz 10 hre IC=1mA hie=8.75kΩ hfe=270 hre=6.25×10-5 hoe=17.7µS hoe 1 10 COLLECTOR CURRENT : IC(mA) 100 10n VCB=30V 1n 100p 10p 1p 0.1p Fig.16 h parameter vs. collector current Fig.15 Gain bandwidth product vs. collector current 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta(°C) Fig.17 Noise characteristics ( I ) 100k 10 8 dB B B B 3d 2 5d 3 8d 4 dB 5 10k =1 6 12 7 Ta=25˚C VCE=5V f=10Hz NF SOURCE RESISTANCE : RS(Ω) Ta=25˚C VCE=5V IC=100µA RS=10kΩ 9 NOISE FIGURE : NF (dB) hre hfe 1 0.1 0.1 500 hoe hie COLLECTOR CUTOFF CURRENT : ICBO(A) 100 1000 h-PARAMETERS NORMALIZED TO 1mA CURRENT GAIN-BANDWIDTH PRODUCT : fT(MHz) Transistors 1k 1 0 10 100 1k FREQUENCY : f(Hz) 10k 100 0.01 100k Fig.18 Noise vs. collector current SOURCE RESISTANCE : RS (Ω) SOURCE RESISTANCE : RS (Ω) 2d B B SOURCE RESISTANCE : RS (Ω) =1 5d B 3d Fig.21 Noise characteristics ( IV ) B 8d 10 10k Ta=25˚C VCE=5V f=10kHz B 0.1 1 COLLECTOR CURRENT : IC(mA) NF 1d 1k 100 0.01 100k dB Fig.20 Noise characteristics ( III ) B 10 B 0.1 1 COLLECTOR CURRENT : IC(mA) dB 3d 100 0.01 10k Ta=25˚C VCE=5V f=1kHz =1 B 1k NF 5d B B 5d dB 3d =1 10k dB 12 B 8d NF 100k 8d Ta=25˚C VCE=5V f=30Hz 10 Fig.19 Noise characteristics ( II ) 12 100k 0.1 1 COLLECTOR CURRENT : IC(mA) 1k 100 0.01 0.1 1 COLLECTOR CURRENT : IC(mA) 10 Fig. 22 Noise characteristics ( V ) Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1