BC858BW

BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B Features 1) BVCEO < -30V (IC=-1mA) 2) Complements the BC848B / BC848BW. External dimensions (Unit : mm) BC858BW 2.0±0.2 1.3±0.1 0.65 0.65 (1) (2) 0.2 0.9±0.1 0.7±0.1 1.2±0.1 Package, marking and packaging specifications Paet No. Pakaging type Marking Code Basic ordering unit (pieces) BC858BW UMT3 G3K T106 3000 BC858B SST3 G3K T116 3000 BC858B 2.9±0.2 1.9±0.2 2.1±0.1 00.1 (3) ROHM : UMT3 EIAJ : EC-70 0.3+0.1 -0 0.15±0.05 All terminals have same dimensions (1) Emitter (2) Base (3) Collector 0.95 +0.2 −0.1 0.45±0.1 Absolute maximum ratings (Ta=25°C) (1) 0.95 0.95 (2) 1.3+0.2 - 0.1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −30 −30 −5 −0.1 0.2 0.35 150 −65 to +150 Unit V V V A W (3) 2.4±0.2 0~0.1 0.2Min. 0.4 +0.1 −0.05 +0.1 0.15 −0.06 0.1~0.4 ∗ ROHM : SST3 All terminals have same dimensions (1) Emitter (2) Base (3) Collector ˚C ˚C ∗ When mounted on 7 × 5 × 0.6 mm ceramic board. Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(on) hFE fT Cob Min. −30 −30 −5 − − − − −0.6 210 − − Typ. − − − − − − − − − 250 4.5 Max. − − − −100 4 −0.3 −0.65 −0.75 480 − − Unit V V V nA µA V V V − MHz pF IC= −50µA IC= −1mA IE= −50µA VCB= −30V VCB= −30V, Ta=150°C IC/IB= −10mA/−0.5mA IC/IB= −100mA/−5mA VCE/IC= −5V/−10mA VCE/IC= −5V/−2mA VCE= −5V , IE=20mA , f=100MHz VCB= −10V , IE=0 , f=1MHz Conditions Electrical characteristics curves 100 COLLECTOR CURRENT : IC (mA) 0.7 Ta=25˚C 10.0 COLLECTOR CURRENT : IC (mA) 0.6 0.5 8.0 50 Ta=25˚C 80 0.4 45 40 60 0.3 35 6.0 30 25 40 0.2 4.0 20 20 0.1 2.0 15 10 5 IB=0mA 0 2.0 0 1.0 COLLECTOR-EMITTER VOLTAGE : VCE(V) 1B=0µA 0 2.0 0 1.0 COLLECTOR-EMITTER VOLTAGE : VCE(V) Fig.1 Grounded emitter output characteristics ( I ) Fig.2 Grounded emitter output characteristics ( II ) Rev.A 1/4 BC858BW / BC858B Transistors 500 Ta=25˚C DC CURRENT GAIN : hFE VCE=10V 5V 100 1V 10 5 0.1 1.0 10 COLLECTOR CURRENT : IC(mA) 100 1000 Fig.3 DC current gain vs. collector current ( I ) 500 Ta=125˚C VCE=5V DC CURRENT GAIN : hFE Ta=25˚C 100 Ta=-55˚C 10 5 0.1 1.0 10 COLLECTOR CURRENT : IC(mA) 100 1000 Fig.4 DC current gain vs. collector current ( II ) 500 Ta=25˚C VCE=5V f=1kHz AC CURRENT GAIN : hFE 100 10 5 0.01 0.1 1.0 COLLECTOR CURRENT : IC(mA) 10 100 Fig.5 AC current gain vs. collector current Rev.A 2/4 BC858BW / BC858B Transistors BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1.0 10 COLLECTOR CURRENT : IC(mA) 100 1.8 BASE EMITTER VOLTAGE : VBE(ON)(V) Ta=25˚C IC / IB=10 0.3 Ta=25˚C IC / IB=10 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 Ta=25˚C VCE=10V 0.2 0.1 0 0.1 1.0 10 COLLECTOR CURRENT : IC(mA) 100 1.0 10 100 COLLECTOR CURRENT : IC(mA) Fig.6 Collector-emitter saturation voltage vs. collector current Fig.7 Base-emitter saturation voltage vs. collector current Fig.8 Grounded emitter propagation characteristics 1000 Ta=25˚C IC / IB=10 1000 Ta=25˚C VCC=40V IC / IB=10 1000 Ta=25˚C IC=10IB1=10IB2 40V TURN ON TIME : ton(ns) STORAGE TIME : tS(ns) RISE TIME : tr(ns) 15V VCE=3V 100 15V VCC=3V 40V 100 100 10 1.0 10 100 COLLECTOR CURRENT : IC(mA) 10 1.0 10 COLLECTOR CURRENT : IC(mA) 100 10 1.0 10 COLLECTOR CURRENT : IC(mA) 100 Fig.9 Turn-on time vs. collector current Fig.10 Rise time vs. collector current Fig.11 Storage time vs. collector current 1000 COLLECTOR-EMITTER VOLTAGE : VCE(V) Ta=25˚C VCC=40V IC=10IB1=10IB2 100 50 Ta=25˚C f=1MHz Ta=25˚C 300MHz 100MHz 200MHz 10 300MHz CAPACITANCE (pF) FALL TIME : tf(ns) Cib 10 Cob 100 200MHz 1.0 0.5 0.5 100MHz 10 1.0 10 COLLECTOR CURRENT : IC(mA) 100 1 0.5 1 10 REVERSE BIAS VOLTAGE(V) 50 1 10 100 500 COLLECTOR CURRENT : IC(mA) Fig.12 Fall time vs. collector current Fig.13 Input/output capacitance vs. voltage Fig.14 Gain bandwidth product Rev.A 3/4 BC858BW / BC858B Transistors CURRENT GAIN-BANDWIDTH PRODUCT : fT(MHz) h-PARAMETERS NORMALIZED TO 1mA Ta=25˚C VCE=5V Ta=25°C VCE=6V f=270Hz hie hoe COLLECTOR CUTOFF CURRENT : ICBO(A) 1000 100 10n VCB=30V 1n 10 100p 100 hre hfe 1 hre 10p hoe 0.1 0.1 10 0.5 1 IC=1mA hie=8.75kΩ hfe=270 hre=6.25×10-5 hoe=17.7µS 1 10 COLLECTOR CURRENT : IC(mA) 100 1p 100 10 COLLECTOR CURRENT : IC(mA) 500 0.1p 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta(°C) Fig.15 Gain bandwidth product vs. collector current Fig.16 h parameter vs. collector current Fig.17 Noise characteristics ( I ) 10 9 100k SOURCE RESISTANCE : RS(Ω) NOISE FIGURE : NF (dB) 8 7 6 5 4 3 2 1 0 10 100 1k FREQUENCY : f(Hz) 10k Ta=25˚C VCE=5V IC=100µA RS=10kΩ Ta=25˚C VCE=5V f=10Hz 12 = NF 1d 8d B 10k dB B 5d B 3d B 1k 100k 100 0.01 0.1 1 COLLECTOR CURRENT : IC(mA) 10 Fig.18 Noise vs. collector current Fig.19 Noise characteristics ( II ) 100k SOURCE RESISTANCE : RS (Ω) SOURCE RESISTANCE : RS (Ω) NF =1 10k dB 10k Ta=25˚C VCE=5V f=1kHz =1 SOURCE RESISTANCE : RS (Ω) Ta=25˚C VCE=5V f=30Hz 100k 100k NF dB 12 NF =1 2 8d 5d dB B 8d B dB 10k Ta=25˚C VCE=5V f=10kHz B 3d B B 3d 5d 12 1d B 5d B 3d B 8d B B dB 1k 1k 1k 100 0.01 0.1 1 COLLECTOR CURRENT : IC(mA) 10 100 0.01 0.1 1 COLLECTOR CURRENT : IC(mA) 10 100 0.01 0.1 1 COLLECTOR CURRENT : IC(mA) 10 Fig.20 Noise characteristics ( III ) Fig.21 Noise characteristics ( IV ) Fig. 22 Noise characteristics ( V ) Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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