BCX19_11

NPN small signal transistor BCX19 Features (1) High gain and low saturation voltage. (2) Complements the BCX17. Dimensions (Unit : mm) BCX19 2.9 0.4 0.95 0.45 Package Type BCX19 Code Basic ordering unit (pieces) Taping T116 3000 (1)Emitter (2)Base (3)Collector (2) (1) 0.95 0.95 1.9 1.3 2.4 Packaging specifications (3) 0.15 Each lead has same dimensions Abbreviated symbol : GU1 Absolute maximum ratings (Ta=25C) Parameter Collector-emitter voltage (VBE=0) Collector-emitter voltage (open base) Emitter-base voltage Collector current Collector current (peak value) Collector power dissipation Junction temperature Storage temperature Symbol VCES VCEO VEBO IC ICM PC Tj Tstg Limits 50 45 5 0.5 1 0.2 0.35 0.425 150 −65 to 150 Unit V V V A A W W W ∗ ∗2 °C °C ∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE ∗2 Mounted on a 15×15×0.6 mm CERAMIC SUBSTRATE Electrical characteristics (Ta=25C) Parameter Symbol Min. 50 45 5 − − − − 100 DC current transfer ratio Transition frequency Collector-base cutoff current hFE fT ICBO 70 40 − − Typ. − − − − − − − − − − 250 − Max. − − − 0.1 10 0.62 1.2 600 − − − 5 MHz − Unit V V V IC= 50μA IC= 10mA IE= 50μA VCB= 20V VEB= 5V IC/IB= 500mA/ 50mA VCE= 1V, IC= 500mA VCE= 1V, IC= 100mA VCE= 1V, IC= 300mA VCE= 1V, IC= 500mA VCE= 5V, IE= 20mA, f=100MHz VCB= 20V, Ta=150°C Conditions Collector-emitter breakdown voltage BVCES Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage Collector-base cutoff current Emitter-base cutoff current Collector-emitter saturation voltage Base-emitter voltage BVEBO ICBO IEBO VCE(sat) VBE(on) μA μA V V μA www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 0.2Min. 1/2 2011.09 - Rev.B BCX19 Absolute maximum ratings (Ta=25C) IB =500uA IB =450uA IB =400uA Data Sheet 1000 100 VCE=1V 1000 IB =350uA Ta=25ºC COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 100 Ta=125ºC 75ºC 25ºC -55ºC IB =250uA 60 IB =200uA IB =150uA IB =100uA DC CURRENT GAIN : hFE 80 IB =300uA 100 40 10 20 IB =0A IB =50uA VCE=5V 3V 1V 10 1 0 0.2 0.4 0.6 0.8 1 1.2 0 0 0.4 0.8 1.2 Ta=25ºC 1.6 2 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE (V) Fig1. Grounded Emitter Propagation Characteristics 1000 VCE=1V 1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig2. Grounded Emitter Output Characteristics COLLECTOR CURRENT : IC (mA) Fig3. DC Current Gain vs. Collector Current (I) 1 IC /IB=10/1 COLLECTOR SATURATION VOLTAGE : VCE(s at) (V) Ta=25ºC 100 Ta=125ºC 75ºC 25ºC -55ºC 0.1 IC /IB=50/1 20/1 10/1 COLLECTOR SATURATION VOLTAGE : VCE(s at) (V) DC CURRENT GAIN : hFE 0.1 Ta=125ºC 75ºC 25ºC -55ºC 10 1 10 100 1000 0.01 1 10 100 1000 0.01 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig4. DC Current Gain vs. Collector Current (II) COLLECTOR CURRENT : IC (mA) Fig5. Collector Saturation Voltage vs. Collector Current (I) COLLECTOR CURRENT : IC (mA) Fig6. Collector Saturation Voltage vs. Collector Current (II) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 50 Cib Ta=25 C f=1MHz IE=0A Ta=25 C 500 TRANSITION FREQUENCY : fT (MHZ) VCE=6V 20 10 Cob 200 5 100 0.1 0.2 0.5 1 2 5 10 20 -1 -2 -5 -10 -20 -50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.7 Input-and-output capacity vs.voltage characteristic Fig.8 Transition frequency vs.emitter current www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.09 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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