BCX70K

BCX70K

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    BCX70K - NPN small signal transistor - Rohm

  • 详情介绍
  • 数据手册
  • 价格&库存
BCX70K 数据手册
NPN small signal transistor BCX70J, K Features 1) Ideal for switching and AF amplifier applications. 2) Complements the BCX71. Dimensions (Unit : mm) BCX70J,K 2.9 0.4 0.95 0.45 Package Type BCX70J, K Code Basic ordering unit (pieces) Taping T116 3000 (1)Emitter (2)Base (3)Collector (2) (1) 0.95 0.95 1.9 1.3 2.4 Packaging specifications (3) 0.15 Each lead has same dimensions Abbreviated symbol : GAJ (BCX70J) GAK (BCX70K) Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 45 45 5 0.2 0.2 0.35 150 −55 to 150 Unit V V V A W W ∗ °C °C ∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE Electrical characteristics (Ta=25C) Parameter Symbol Min. 45 5 − − − − − − 0.55 250 90 125 − − − Typ. − − − − − − − − − − − − − − − Max. − − 0.1 0.1 0.35 0.55 0.85 1.05 0.75 630 − − 4.5 6 20 Unit V V IC= 2mA IC= 10μA VCE= 45V VEB= 4V IC/IB= 10mA/ 0.25mA IC/IB= 50mA/ 1.25mA IC/IB= 10mA/ 0.25mA IC/IB= 50mA/ 1.25mA VCE= 5V, IC= 2mA VCE= 5V, IC= 2mA VCE= 5V, IC= 50mA VCE= 5V, IE= 10mA, f=100MHz VCB= 10V, f=1MHz, IE=0A VCE= 5V, IC= 200μA, f=1kHz,Rg=2kΩ VCB= 45V, Ta=150°C Conditions Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage Collector-emitter cutoff current Emitter-base cutoff current Collector-emitter saturation voltage BVEBO ICES IEBO VCE(sat)1 VCE(sat)2 Base-emitter saturation voltage Base-emitter voltage DC current transfer ratio Transition frequency Collector output capacitance Noise figure Collector-base cutoff current VBE(sat)1 VBE(sat)2 VBE(on) hFE1 hFE2 fT Cob NF ICBO μA μA V V V V V − MHz pF dB μA This parts are classified into the categories below and given hFE item. Part. No hFE1 hFE2 BCX70J BCX70K 250 to 460 380 to 630 90 or more 125 or more www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 1/2 0.2Min. 2011.11 - Rev.B BCX70J, K Electrical characteristics 100 -160 1000 Ta=25ºC Data Sheet COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) VCE=5V Ta=25ºC -120 IB=300uA IB=250uA 10 Ta=125ºC 75ºC 25ºC -55ºC DC CURRENT GAIN : hFE IB=500uA 450uA 400uA 350uA -80 IB=200uA IB=150uA 100 VCE=5V 3V 1V 1 -40 IB=100uA IB=50uA IB=0A 0.1 0 0.2 0.4 0.6 0.8 1 1.2 BASE TO EMITTER VOLTAGE : VBE (V) Fig1. Grounded Emitter Propagation Characteristics 0 0 -2 -4 -6 -8 -10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig2. Grounded Emitter Output Characteristics 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig3. DC Current Gain vs. Collector Current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 VCE=-5V 1 Ta=25ºC COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1 IC/IB=40/1 Ta=125ºC 75ºC 25ºC -55ºC 0.1 DC CURRENT GAIN : hFE 100 Ta=125ºC 75ºC 25ºC -55ºC 0.1 IC/IB=40/1 20/1 10/1 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig4. DC Current Gain vs. Collector Current (II) 0.01 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig5. Collector Saturation Voltage vs. Collector Current (I) 0.01 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig6. Collector Saturation Voltage vs. Collector Current (II) 20 BASE SATURATION VOLTAGE : VBE(sat) (V) IC/IB=40/1 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -10 TRANSITION FREQUENCY : fT (MHz) Ta=25°C VCE=6V 10 Cib Ta=25°C f=1MHz IE=0A IC=0A -1 Ta=-55ºC 25ºC 75ºC 125ºC 200 5 100 2 Co b 1 0.2 0.5 1 2 5 10 20 50 -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT : IC (mA) Fig7. Base Saturation Voltage vs. Collector Current 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.11 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
BCX70K
1. 物料型号: - BCX70J - BCX70K

2. 器件简介: - 这些NPN小信号晶体管适合于开关和音频放大应用。 - BCX70J和BCX70K与BCX71互补。

3. 引脚分配: - 发射极(Emitter) - 基极(Base) - 集电极(Collector) - 简化符号:GAJ(BCX70J),GAK(BCX70K)

4. 参数特性: - 集电极-基极电压(Vcbo):45V - 集电极-发射极电压(Vceo):45V - 发射极-基极电压(Vebo):5V - 集电极电流(Ic):0.2A - 集电极功率耗散(Pc):0.2W(安装在7×5×0.6mm陶瓷基板上为0.35W) - 结温(Tj):150°C - 存储温度(Tstg):-55至150°C

5. 功能详解: - 电气特性(Ta=25°C): - 集电极-发射极击穿电压(BVCEO):45V - 发射极-基极击穿电压(BVEBO):5V - 集电极-发射极截止电流(ICES):0.1A - 发射极-基极截止电流(IEBO):0.1A - 集电极-发射极饱和电压(VCE(sat)1):0.35V(Ic/Ib= 10mA/ 0.25mA) - VCE(sat)2:0.55V(Ic/Ib=50mA/ 1.25mA) - 基极-发射极饱和电压(VBE(sat1)):0.85V(Ic/Ib= 10mA/ 0.25mA) - VBE(sat)2:1.05V(Ic/Ib= 50mA/ 1.25mA) - 基极-发射极电压(VBE(cn)):0.55至0.75V(Vce=5V,Ic=2mA) - DC电流传输比(hFE1):250至630(Vce=5V,Ic=2mA) - hFE2:90至125(Vce=5V,Ic=50mA) - 转换频率(fr):125MHz(Vce=5V,Ie=10mA,f=100MHz) - 集电极输出电容(Cob):4.5pF(Vcb=10V,f=1MHz,Ie=0A) - 噪声系数(NF):1至6dB(Vce=5V,Ic=200μA,f=1kHz,Rg=2kΩ) - 集电极-基极截止电流(IcBO):20μA(Vc=45V,Ta=150°C)

6. 应用信息: - 这些晶体管适用于一般用途的电子设备或设备(如视听设备、办公自动化设备、通信设备、电子电器和娱乐设备)。

7. 封装信息: - 封装类型:T116 - 基本订购单位:3000件
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