BCX71H_11

PNP small signal transistor BCX71H Features 1) Ideal for switching and AF amplifier applications. 2) Complements the BCX70. Dimensions (Unit : mm) BCX71H 2.9 0.4 0.95 0.45 Package Type BCX70H Code Basic ordering unit (pieces) Taping T116 3000 (1)Emitter (2)Base (3)Collector (2) (1) 0.95 0.95 1.9 1.3 2.4 Packaging specifications (3) 0.15 Each lead has same dimensions Abbreviated symbol : GBH Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −45 −45 −5 −0.2 0.2 0.35 150 −55 to 150 Unit V V V A W W ∗ °C °C ∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE Electrical characteristics (Ta=25C) Parameter Symbol Min. −45 −5 − − − − − − −0.6 140 80 Transition frequency Collector output capacitance Noise figure Collector-base cutoff current fT Cob NF ICBO − − − − Typ. − − − − − − − − − − − 180 − − − Max. − − −0.1 −0.1 −0.25 −0.55 −0.85 −1.05 −0.75 310 − − 6 6 −20 Unit V V IC= −2mA IC= −10μA VCE= −45V VEB= −4V IC/IB= −10mA/ −0.25mA IC/IB= −50mA/ −1.25mA IC/IB= −10mA/ −0.25mA IC/IB= −50mA/ −1.25mA VCE= −5V, IC= −2mA VCE= −5V, IC= −2mA VCE= −5V, IC= −50mA VCE= −5V, IE= −10mA, f=100MHz VCB= −10V, f=1MHz VCE= −5V, IC= −200μA, f=1kHz,Rg=2kΩ VCB= −45V, Ta=150°C Conditions Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage Collector-emitter cutoff current Emitter-base cutoff current Collector-emitter saturation voltage BVEBO ICES IEBO VCE(sat)1 VCE(sat)2 Base-emitter saturation voltage Base-emitter voltage DC current transfer ratio VBE(sat)1 VBE(sat)2 VBE(on) hFE μA μA V V V V V − MHz pF dB μA www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 0.2Min. 1/2 2011.11 - Rev.B BCX71H Electrical characteristics -100 -100 IB=-500uA -450uA -400uA Data Sheet 1000 Ta=25ºC COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) VCE=-5V Ta=25ºC -80 -10 Ta=125ºC 75ºC 25ºC -55ºC IB=-350uA -60 IB=-300uA IB=-250uA DC CURRENT GAIN : hFE 100 VCE=-5V -3V -1V -40 IB=-200uA IB=-150uA -1 -20 IB=-100uA IB=-50uA IB=0A -0.1 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 BASE TO EMITTER VOLTAGE : VBE (V) Fig1. Grounded Emitter Propagation Characteristics 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig2. Grounded Emitter Output Characteristics 10 -1 -10 -100 -1000 COLLECTOR CURRENT : IC (mA) Fig3. DC Current Gain vs. Collector Current (I) 1 IC/IB=40/1 Ta=125ºC 75ºC 25ºC -55ºC 0.1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=-5V Ta=25ºC IC/IB=40/1 20/1 10/1 -0.1 100 Ta=125ºC 75ºC 25ºC -55ºC 10 -1 -10 -100 -1000 COLLECTOR CURRENT : IC (mA) Fig4. DC Current Gain vs. Collector Current (II) -10 -0.01 -0.1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 -1 DC CURRENT GAIN : hFE -1 -10 -100 -1000 0.01 -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT : IC (mA) Fig5. Collector Saturation Voltage vs. Collector Current (I) 1000 TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (mA) Fig6. Collector Saturation Voltage vs. Collector Current (II) BASE SATURATION VOLTAGE : VBE(sat) (V) IC/IB=40/1 Ta=-55ºC 25ºC 75ºC 125ºC -1 Ta=25˚C VCE= −12V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 20 Cib 10 500 Ta=25˚C f=1MHz IE=0A IC=0A Co b 200 5 100 2 50 0.5 1 2 5 10 20 50 100 -0.1 -1 -10 -100 COLLECTOR CURRENT : IC (mA) Fig7. Base Saturation Voltage vs. Collector Current −0.5 −1 −2 −5 −10 −20 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.11 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A