Datasheet
Motor/Actuator Driver DC Brush Motor Series
40V/3A Rating H Bridge Driver
for Automotive
BD16912EFV-C
General Description
Key Specifications
BD16912EFV-C is a 1-ch H-bridge DMOS FET driver for
automotive application.
High efficiency driving is possible by direct PWM control
or constant current PWM control.
It is equipped with Output Current Detection Amplifier,
Abnormality Detection Signal Output, low ON resistance
and small package, contributing to high reliability, low
power consumption and space saving of the set.
Package
W (Typ) x D (Typ) x H (Max)
6.50 mm x 6.40 mm x 1.00 mm
HTSSOP-B20
Features
Operating Power Supply Voltage Range:6 V to 18 V
Motor Drive Output Current Rating:
3A
Junction Temperature Range:
–40 °C to +150 °C
Motor Drive Output ON Resistance(Sum of High Side
and Low Side):
0.36 Ω during VVS=12 V (Typ)
AEC-Q100 Qualified (Note 1)
Small Package with Backside Exposed PAD
Driver with Built-in Power DMOS FET
2 Input Control (Forward Rotation, Reverse Rotation,
Idle Rotation, Brake)
Direct PWM Control
Constant Current PWM Control (Current limit)
Power Save (Standby)
Through Current Prevention
Output Current Detection Amplifier
Abnormality Detection Signal Output
Abnormality Detection (Over Current, Over Voltage,
Thermal Shutdown: TSD, Thermal Warning: TW)
Output Protection (Over Current, Over Voltage,
Thermal Shutdown: TSD)
Under Voltage Lock Out: UVLO
HTSSOP-B20
Application
Automotive DC Brush Motor
(Note 1) Grade 1
Typical Application Circuit
5V
5V
1
GND
ST2
20
2
3
IN+
ST1
19
IN−
AMPO
4
PSB
18
N.C.
17
5
6
VREF
VS
16
N.C.
VS
15
7
OUT+
OUT−
14
8
OUT+
OUT−
13
9
RNF
GND
12
10
RNF
CS
11
Controller
12V
M
Figure 1. Basic Application Circuit
〇Product structure : Silicon monolithic integrated circuit
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Contents
General Description ........................................................................................................................................................................ 1
Features.......................................................................................................................................................................................... 1
Key Specifications .......................................................................................................................................................................... 1
Package .......................................................................................................................................................................................... 1
Application ...................................................................................................................................................................................... 1
Typical Application Circuit ............................................................................................................................................................... 1
Contents ......................................................................................................................................................................................... 2
Absolute Maximum Ratings ............................................................................................................................................................ 3
Recommended Operating Conditions ............................................................................................................................................. 3
Thermal Resistance ........................................................................................................................................................................ 3
Pin Configuration ............................................................................................................................................................................ 4
Block Diagram ................................................................................................................................................................................ 4
Pin Description................................................................................................................................................................................ 4
I / O Truth Table .............................................................................................................................................................................. 5
Electrical Characteristics................................................................................................................................................................. 6
Typical Performance Curves ........................................................................................................................................................... 8
Application Example ..................................................................................................................................................................... 24
1.
Variable Speed Control Application by Direct PWM Control. .......................................................................................... 24
2.
Variable Speed Control Application by Constant Current PWM Control ......................................................................... 25
Description of Blocks .................................................................................................................................................................... 26
1.
Under Voltage Lock Out: UVLO. ..................................................................................................................................... 26
2.
Over Voltage Protection: OVP ........................................................................................................................................ 26
3.
Over Current Protection: OCP ........................................................................................................................................ 27
4.
Thermal Warning: TW, Thermal Shutdown: TSD ............................................................................................................ 28
5.
Direct PWM Control ........................................................................................................................................................ 29
6.
Output Current Detection Amp (AMPO Pin) ................................................................................................................... 30
7.
Constant Current PWM Control (Current Limit) .............................................................................................................. 30
8.
Power Save (PSB Pin) ................................................................................................................................................... 31
I / O Equivalence Circuits.............................................................................................................................................................. 32
Heat Loss...................................................................................................................................................................................... 33
1.
Thermal Resistance........................................................................................................................................................ 33
2.
Power Dissipation ........................................................................................................................................................... 33
3.
Thermal De-rating Curve ................................................................................................................................................ 33
Safety Measures ........................................................................................................................................................................... 34
1.
Countermeasure against Destruction of Reverse Connection Power Supply ................................................................. 34
2.
Measures to Raise the Power Supply Pin Voltage by Back Electromotive Force ........................................................... 34
3.
Countermeasures against Unstable Power Supply ........................................................................................................ 35
4.
Prohibition of Ground Line PWM Switching Input ........................................................................................................... 35
Operational Notes ......................................................................................................................................................................... 36
Ordering Information ..................................................................................................................................................................... 38
Marking Diagram .......................................................................................................................................................................... 38
Physical Dimension and Packing Information ............................................................................................................................... 39
Revision History ............................................................................................................................................................................ 40
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Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Power Supply Voltage
Motor Drive Output (OUT+, OUT–) Voltage
Motor Drive Output (OUT+, OUT–) Current
Motor Drive Ground (RNF) Voltage
Abnormality Detection Signal (ST1, ST2) Output Voltage
Abnormality Detection Signal (ST1, ST2) Output Current
Motor Drive Current Detection Signal (AMPO) Output Voltage
Motor Drive Current Detection Signal (AMPO) Output Current
Control Input Voltage (IN+, IN–, PSB, CS, VREF)
Junction Temperature
Storage Temperature Range
Rating
VVS
VO
IO
VRNF
VST
IST
VAMPO
IAMPO
VIN
Tj
Tstg
Unit
–0.3 to +40
–0.3 to +40
–3.0 to +3.0(Note 1)
–0.3 to +1
–0.3 to +7
0 to 10
–0.3 to +3.6
–0.05 to +0.3
–0.3 to +7
–40 to +150
–55 to +150
V
V
A
V
V
mA
V
mA
V
°C
°C
For the current parameter, the current inflow into the IC is indicated as a positive notation, and the current outflow from the IC as a negative notation.
(Note 1) Do not exceed power dissipation (Pd), and area of safe operation (ASO).
The power dissipation is determined by the maximum junction temperature, the thermal resistance in the board’s mounted state, and the ambient
temperature.
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB boards with thermal resistance taken into consideration
by increasing board size and copper area so as not to exceed the maximum junction temperature rating.
Recommended Operating Conditions
Parameter
Symbol
Power Supply Voltage
Operating Temperature
Control Input PWM Frequency (IN+, IN–)
VVS
Topr
fPWM
Min
Limit
Typ
Max
6
–40
–
12
–
–
18
+125
100
Unit
V
°C
kHz
Thermal Resistance(Note 2)
Parameter
Symbol
Thermal Resistance (Typ)
Unit
1s(Note 4)
2s2p(Note 5)
θJA
143.0
26.8
°C/W
ΨJT
8
4
°C/W
HTSSOP-B20
Junction to Ambient
Junction to Top Characterization
Parameter(Note 3)
(Note 2) Based on JESD51-2A(Still-Air).
(Note 3) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 4) Using a PCB board based on JESD51-3.
(Note 5) Using a PCB board based on JESD51-5, 7.
Layer Number of
Measurement Board
Single
Material
Board Size
FR-4
114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70 μm
Layer Number of
Measurement Board
4 Layers
Material
Board Size
FR-4
114.3 mm x 76.2 mm x 1.6 mmt
Top
2 Internal Layers
Thermal Via(Note 6)
Pitch
Diameter
1.20 mm
Φ0.30 mm
Bottom
Copper Pattern
Thickness
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70 μm
74.2 mm x 74.2 mm
35 μm
74.2 mm x 74.2 mm
70 μm
(Note 6) This thermal via connects with the copper pattern of all layers.
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Pin Configuration
Block Diagram
(TOP VIEW)
15 16
1
20
2
19
GND
VS
ST2
IN+
Power Supply
Clamper
V source
I source
UVLO
Power
Save
Clock
Power ON
Reset
ST1
3
18
IN-
AMPO
4
17
5
16
PSB
N.C.
VREF
N.C.
7
2
VS
Package Rear
Exposed PAD
EXP-PAD
6
4
15
3
PSB
IN+
OUT+
IN–
Control
Logic
VS
CURRENT
LIMITATION COMP.
14
OUT+
OUT8
13
9
12
OUT+
OUT-
RNF
Pre
Driver
VREF
18
AMPO
x5
CURRENT
DETECTION
AMP.
11
RNF
13 14
CS
GND
10
H Brigde
OUT–
5
7 8
11
TSD
19
ST1
RNF
CS
9 10
TW
20
ST2
OCP
GND
OVP
1 12
–
EXP-PAD
Pin Description
Pin No. Pin Name
Function
Pin No. Pin Name
1
GND
Ground (small signal ground)
11
2
3
4
5
6
7
IN+
IN–
PSB
VREF
N.C.
OUT+
Motor drive logic input +
Motor drive logic input –
12
13
14
15
16
17
8
OUT+
9
10
RNF
RNF
Power save input
Motor drive current setting voltage input
No connection
Motor drive output +
Motor drive output +
Motor drive ground
Motor drive ground
18
19
20
–
Function
Motor output current detection amplifier
CS
input
GND
Ground (small signal ground)
OUT– Motor drive output –
OUT– Motor drive output –
VS
Power supply
VS
Power supply
N.C.
No connection
Motor output current detection amplifier
AMPO
output
ST1
Abnormality detection signal 1 output
ST2
Abnormality detection signal 2 output
EXP-PAD Package rear exposed PAD
Although the unconnected pin (NC) is not connected inside the IC, there is a possibility of causing unexpected troubles such as oscillation, so open on the
board pattern without making it as a relay point for other wiring.
Motor drive related pins (VS, RNF, OUT+, OUT–) are short-circuited within the IC within the same name, but in order to lower the impedance of the motor drive
current path, short between the same name pins on the board pattern.
Package Rear Exposed PAD should be at the same potential as the ground pin.
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I / O Truth Table
Driver Input
PSB
L
H
H
H
H
IN+
X
L
H
L
H
Driver Output
IN–
X
L
L
H
H
OUT+
Hi-Z
Hi-Z
H
L
L
OUT–
Hi-Z
Hi-Z
L
H
L
Signal Output
(During Resistance Pull-up for
ST1 and ST2)
ST1
ST2
AMPO
H
H
L
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Driver Output State
Name
Power Save
Idle Rotation
Forward Rotation
Reverse Rotation
Brake
H: High, L: Low, X: Don’t care, Hi-Z: High impedance
Driver State
UVLO
Disable
Enable
Disable
Disable
Disable
Disable
Disable
Disable
Disable
Disable
Disable
Disable
Disable
OCP
Disable
X
Enable
Disable
Disable
Enable
Enable
Disable
Enable
Disable
Disable
Enable
Enable
TW
Disable
X
Disable
Enable
Enable
Enable
Enable
Disable
Disable
Enable
Enable
Enable
Enable
Driver Output
TSD
Disable
X
Disable
Disable
Enable
Disable
Enable
Disable
Disable
Disable
Enable
Disable
Enable
OVP
Disable
X
Disable
Disable
Disable
Disable
Disable
Enable
Enable
Enable
Enable
Enable
Enable
OUT+
Active
Hi-Z
Hi-Z
Active
Hi-Z
Hi-Z
Hi-Z
L
Hi-Z
L
Hi-Z
Hi-Z
Hi-Z
OUT–
Active
Hi-Z
Hi-Z
Active
Hi-Z
Hi-Z
Hi-Z
L
Hi-Z
L
Hi-Z
Hi-Z
Hi-Z
Signal Output (Note 1)
(During Resistance Pull-up for
ST1 and ST2)
ST1
ST2
AMPO
H
H
Active
H
H
L
L
H
Active
M
H
Active
M
H
Active
L
H
Active
L
H
Active
H
L
Active
L
L
Active
M
L
Active
M
L
Active
L
L
Active
L
L
Active
H: High, M: Middle, L: Low, X: Don’t care, Hi-Z: High impedance
If both IN+ and IN–are Low, driver output goes to Hi-Z although over voltage is detected.
(Note 1) 4.7 kΩ for ST1, Middle for pull up
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Electrical Characteristics
(Unless otherwise specified Tj=–40 °C to +150 °C, VVS=6 V to 18 V, VPSB=5 V, VCS=VRNF=0 V, VVREF=5 V)
Parameter
Symbol
Min
-
Limit
Typ
3
Max
6
Unit
Condition
mA
VPSB=H
VPSB=L, Tj=–40 °C to
+125 °C
VPSB=L, Tj=+125 °C to
+150 °C
VVS=6 V to 12 V, IO=±2 A,
Tj=+25 °C, Sum of High Side
and Low Side
VVS=12 V to 18 V, IO=±2 A,
Tj=+25 °C, Sum of High Side
and Low Side
VVS=6 V to 12 V, IO=±2 A,
Tj=–40 °C, Sum of High Side
and Low Side
VVS=6 V to 12 V, IO=±2 A,
Tj=+150 °C, Sum of High
Side and Low Side
VVS=12 V to 18 V, IO=±2 A,
Tj=–40 °C, Sum of High Side
and Low Side
VVS=12 V to 18 V, IO=±2 A,
Tj=+150 °C, Sum of High
Side and Low Side
Circuit Current (During Operation)
IQ
Circuit Current (At Standby)
ISTBY1
-
0
10
μA
Circuit Current (At Standby)
ISTBY2
-
-
40
μA
Motor Drive Output ON Resistance 1
RON1
-
0.40
0.59
Ω
Motor Drive Output ON Resistance 2
RON2
-
0.36
0.56
Ω
Motor Drive Output ON Resistance 3
(Reference Value) (Note 1)
RON3
-
-
0.45
Ω
Motor Drive Output ON Resistance 4
(Reference Value) (Note 1)
RON4
-
-
0.88
Ω
Motor Drive Output ON Resistance 5
(Reference Value) (Note 1)
RON5
-
-
0.43
Ω
Motor Drive Output ON Resistance 6
(Reference Value) (Note 1)
RON6
-
-
0.83
Ω
VFOH1
-
1.0
1.3
V
IO=+2 A, Tj=+25 °C
VFOH2
-
-
1.4
V
IO=+2 A, Tj=–40 °C
VFOH3
-
-
1.2
V
IO=+2 A, Tj=+150 °C
VFOL1
-
1.0
1.3
V
IO=–2 A, Tj=+25 °C
VFOL2
-
-
1.4
V
IO=–2 A, Tj=–40 °C
VFOL3
-
-
1.2
V
IO=–2 A, Tj=+150 °C
IOLH
IOLL
–40
-
-
20
μA
μA
RST1
3.3
4.7
6.1
kΩ
VSTL1
-
0.1
0.3
V
VSTL2
-
0.1
0.3
V
VO=0 V
VO=VVS
IST1=+0.5 mA, Thermal
Warning (TW)
IST1=+1.1 mA, Overcurrent
Detection
IST2=+1.1 mA, Overvoltage
Detection
IST
-
-
10
μA
VST=7 V
2.5
25
–10
50
0
0.8
100
+10
V
V
μA
μA
VIN+, VIN– =5 V
VIN+, VIN– =0 V
Motor Drive Output Higher-Side
Body Diode Voltage 1
Motor Drive Output Higher-Side
Body Diode Voltage 2 (Reference Value) (Note 1)
Motor Drive Output Higher-Side
Body Diode Voltage 3 (Reference Value) (Note 1)
Motor Drive Output Lower-Side
Body Diode Voltage 1
Motor Drive Output Lower-Side
Body Diode Voltage 2 (Reference Value) (Note 1)
Motor Drive Output Lower-Side
Body Diode Voltage 3 (Reference Value) (Note 1)
Motor Drive Output Higher-Side Leakage Current
Motor Drive Output Lower-Side Leakage Current
Abnormality Detection Signal ST1 Output Middle
Output Impedance (Reference Value) (Note 1)
Abnormality Detection Signal
ST1 Output Low Voltage
Abnormality Detection Signal
ST2 Output Low Voltage
Abnormality Detection Signal
Output Leakage Current
Motor Drive Logic Input High Level Input Voltage
Motor Drive Logic Input Low Level Input Voltage
Motor Drive Logic Input High Level Input Current
Motor Drive Logic Input Low Level Input Current
VINH
VINL
IINH
IINL
For the current parameter, the current inflow into the IC is indicated as a positive notation, and the current outflow from the IC as a negative notation.
(Note 1) Reference value is the design value on which evaluation confirmation was carried out, and shipment inspection is not carried out.
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Electrical Characteristics - continued
(Unless otherwise specified Tj=–40 °C to +150 °C, VVS=6 V to 18 V, VPSB=5 V, VCS=VRNF=0 V, VVREF=5 V)
Parameter
Symbol
Limit
Typ
50
0
0
0
Max
0.8
100
+10
+0.1
+0.1
Unit
Condition
Power Save Input High Voltage
Power Save Input Low Voltage
Power Save Input High Current
Power Save Input Low Current
CS Pin Input Bias Current
VREF Pin Input Bias Current
Motor Drive Current Setting Input Voltage Range
(Constant Current PWM Control Setting Range)
AMPO Output Saturation Voltage
Current Limit Comparator Offset Voltage
Motor Output Current Detection Amplifier
Output Voltage 1
Motor Output Current Detection Amplifier
Output Voltage 2
VPSBH
VPSBL
IPSBH
IPSBL
ICS
IVREF
Min
2.7
25
–10
–0.1
–0.1
VRVREF
0
-
2.8
V
VAMPOMAX
VOFFSET
–20
3.0
0
3.2
+20
V
mV
VAMPO1
0.4
0.5
0.6
V
VCS1=0.1 V
VAMPO2
2.25
2.5
2.75
V
VCS2=0.5 V
Motor Output Current Detection Amplifier Gain
GAMP
4.8
5.0
5.2
V/V
Constant Current PWM Control Carrier Frequency
fVREF
19
33
49
kHz
OCP Detect Current
OCP Output ON Time (Reference Value) (Note 1)
OCP Output OFF Time
OVP Detect Voltage
OVP Hysteresis
TSD Detect Temperature (Reference Value) (Note 1)
TSD Hysteresis (Reference Value) (Note 1)
TW Detect Temperature (Reference Value) (Note 1)
TW Hysteresis (Reference Value) (Note 1)
UVLO Detect Voltage
UVLO Hysteresis
IOCP
tON
tOFF
VOVPON
VOVPHYS
TTSDON
TTSDHYS
TTWON
TTWHYS
VUVLOON
VUVLOHYS
3.0
2
30
150
135
4.5
-
0.4
4
33
2
175
25
160
25
5.0
0.5
8.0
0.7
8
36
200
185
5.5
-
A
μs
ms
V
V
°C
°C
°C
°C
V
V
Motor Drive I/O Delay Time (Note2)
tINOUT
-
-
10
μs
V
V
μA
μA
μA
μA
VPSB=5 V
VPSB=0 V
VCS=0 V to 1 V
VVREF=0 V to 5 V
VCS=0.7 V
VAMPO=0 V to 2.8 V
GAMP=(VAMPO2-VAMPO1)/(VCS2VCS1)
For Constant Current PWM
Control
From IN+, IN– to OUT+,
OUT–
For the current parameter, the current inflow into the IC is indicated as a positive notation, and the current outflow from the IC as a negative notation.
(Note 1) Reference value is the design value on which evaluation confirmation was carried out, and shipment inspection is not carried out.
(Note 2) tINOUT is total delay time of logic and through current prevention.
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Typical Performance Curves
(Reference Data)
6.0
VPSB=5 V
VIN+=0 V
VIN-=0 V
5.0
4.0
Circuit Current (During Operation) : IQ [mA]
Circuit Current (During Operation) : IQ [mA]
6.0
+150 °C
+25 °C
-40 °C
3.0
2.0
1.0
Operating Voltage Range
0.0
5.0
4.0
+150 °C
+25 °C
-40 °C
3.0
2.0
1.0
Operating Voltage Range
0.0
0
5
10
15
Power Supply Voltage : VVS [V]
20
0
Figure 2. Circuit Current vs Power Supply Voltage
(During Operation, VIN+/VIN-=L/L)
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 3. Circuit Current vs Power Supply Voltage
(During Operation, VIN+/VIN-=L/H)
6.0
6.0
VPSB=5 V
VIN+=5 V
VIN-=0 V
5.0
4.0
Circuit Current (During Operation) : IQ [mA]
Circuit Current (During Operation) : IQ [mA]
VPSB=5 V
VIN+=0 V
VIN-=5 V
+150 °C
+25 °C
-40 °C
3.0
2.0
1.0
Operating Voltage Range
0.0
VPSB=5 V
VIN+=5 V
VIN-=5 V
5.0
4.0
+150 °C
+25 °C
-40 °C
3.0
2.0
1.0
Operating Voltage Range
0.0
0
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 4. Circuit Current vs Power Supply Voltage
(During Operation, VIN+/VIN-=H/L)
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0
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 5. Circuit Current vs Power Supply Voltage
(During Operation, VIN+/VIN-=H/H)
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Typical Performance Curves - continued
(Reference Data)
10
40
V PSB =0 V
Circuit Current (At Standby) : ISTBY2 [μA]
Circuit Current (At Standby) : ISTBY1 [μA]
V PSB =0 V
8
6
4
Operating Voltage Range
2
+25 °C
-40 °C
0
20
Operating Voltage Range
10
+150 °C
0
0
5
10
15
Power Supply Voltage : VVS [V]
20
0
Figure 6. Circuit Current vs Power Supply Voltage
(At Standby)
1.0
1.0
V VS =6 V
0.8
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 7. Circuit Current vs Power Supply Voltage
(At Standby)
Motor Drive Output ON Resistance : RON [Ω]
Motor Drive Output ON Resistance : RON [Ω]
30
+150 °C
+25 °C
-40 °C
0.6
0.4
0.2
0.0
V VS =6 V
0.8
+150 °C
+25 °C
-40 °C
0.6
0.4
0.2
0.0
0
1
2
Motor Drive Output Current : IOUT [A]
3
Figure 8. Motor Drive Output ON Resistance
vs Motor Drive Output Current
(Sum of OUT+ High Side + OUT- Low Side)
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TSZ22111 • 15 • 001
0
1
2
Motor Drive Output Current : IOUT [A]
3
Figure 9. Motor Drive Output ON Resistance
vs Motor Drive Output Current
(Sum of OUT+ Low Side + OUT- High Side)
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Typical Performance Curves - continued
(Reference Data)
1.0
V VS =12 V
0.8
Motor Drive Output ON Resistance : RON [Ω]
Motor Drive Output ON Resistance : RON [Ω]
1.0
+150 °C
+25 °C
-40 °C
0.6
0.4
0.2
0.0
V VS =12 V
0.8
0.6
0.4
0.2
0.0
0
1
2
Motor Drive Output Current : IOUT [A]
3
0
Figure 10. Motor Drive Output ON Resistance
vs Motor Drive Output Current
(Sum of OUT+ High Side + OUT- Low Side)
1
2
Motor Drive Output Current : IOUT [A]
3
Figure 11. Motor Drive Output ON Resistance
vs Motor Drive Output Current
(Sum of OUT+ Low Side + OUT- High Side)
1.0
1.0
V VS =18 V
0.8
Motor Drive Output ON Resistance : RON [Ω]
Motor Drive Output ON Resistance : RON [Ω]
+150 °C
+25 °C
-40 °C
+150 °C
+25 °C
-40 °C
0.6
0.4
0.2
0.0
V VS =18 V
0.8
+150 °C
+25 °C
-40 °C
0.6
0.4
0.2
0.0
0
1
2
Motor Drive Output Current : IOUT [A]
3
Figure 12. Motor Drive Output ON Resistance
vs Motor Drive Output Current
(Sum of OUT+ High Side + OUT- Low Side)
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TSZ22111 • 15 • 001
0
1
2
Motor Drive Output Current : IOUT [A]
3
Figure 13. Motor Drive Output ON Resistance
vs Motor Drive Output Current
(Sum of OUT+ Low Side + OUT- High Side)
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BD16912EFV-C
Typical Performance Curves - continued
(Reference Data)
1.0
IO=2 A
Motor Drive Output ON Resistance : RON [Ω]
Motor Drive Output ON Resistance : RON [Ω]
1.0
0.8
0.6
+150 °C
+25 °C
-40 °C
0.4
0.2
Operating Voltage Range
0.0
IO=2 A
0.8
0.6
+150 °C
+25 °C
-40 °C
0.4
0.2
Operating Voltage Range
0.0
0
5
10
15
Power Supply Voltage : VVS [V]
20
0
Figure 14. Motor Drive Output ON Resistance
vs Power Supply Voltage
(Sum of OUT+ High Side + OUT- Low Side)
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 15. Motor Drive Output ON Resistance
vs Power Supply Voltage
(Sum of OUT+ Low Side + OUT- High Side)
Motor Drive Output High Side Body Diode
Voltage : VFOH [V]
1.4
Motor Drive Output High Side Body Diode
Voltage : VFOH [V]
1.4
1.0
1.0
-40 °C
+25 °C
+150 °C
0.6
-40 °C
+25 °C
+150 °C
0.6
0.2
0.2
0
1
2
Motor Drive Output Current : IOUT [A]
3
0
Figure 16. Motor Drive Output High Side Body Diode Voltage
vs Motor Drive Output Current
(OUT+)
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TSZ22111 • 15 • 001
1
2
Motor Drive Output Current : IOUT [A]
3
Figure 17. Motor Drive Output High Side Body Diode Voltage
vs Motor Drive Output Current
(OUT-)
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Typical Performance Curves - continued
(Reference Data)
Motor Drive Output Low Side Body Diode
Voltage : VFOL [V]
1.4
Motor Drive Output Low Side Body Diode
Voltage : VFOL [V]
1.4
1.0
1.0
-40 °C
+25 °C
+150 °C
0.6
0.6
0.2
0.2
-3
-2
-1
Motor Drive Output Current : IOUT [A]
0
-3
Figure 18. Motor Drive Output Low Side Body Diode Voltage
vs Motor Drive Output Current
(OUT+)
40
V VS =18 V
VO=0 V
30
-2
-1
Motor Drive Output Current : IOUT [A]
0
Figure 19. Motor Drive Output Low Side Body Diode Voltage
vs Motor Drive Output Current
(OUT-)
Motor Drive Output High Side Leakage Current :
IOLH [μA]
40
Motor Drive Output High Side Leakage Current :
IOLH [μA]
-40 °C
+25 °C
+150 °C
V VS =18 V
VO=0 V
30
20
20
10
10
Junction Temperature Range
0
-50
0
50
100
Junction Temperature : Tj [°C]
150
0
-50
Figure 20. Motor Drive Output Higher-Side Leakage Current
vs Junction Temperature
(OUT+)
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Junction Temperature Range
0
50
100
Junction Temperature : Tj [°C]
150
Figure 21. Motor Drive Output Higher-Side Leakage Current
vs Junction Temperature
(OUT-)
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Typical Performance Curves - continued
(Reference Data)
20
V VS =18 V
VO=18 V
Motor Drive Output Low Side Leakage Current :
IOLL [μA]
Motor Drive Output Low Side Leakage Current :
IOLL [μA]
20
15
V VS =18 V
VO=18 V
15
10
10
5
Junction Temperature Range
0
5
Junction Temperature Range
0
-50
0
50
100
Junction Temperature : Tj [°C]
150
-50
Figure 22. Motor Drive Output Lower-Side Leakage Current
vs Junction Temperature
(OUT+)
0.30
IST1=+0.5 mA
Thermal Warning
Overcurrent
Detection
Abnormality Detection Signal ST1 Output
Low Voltage : VSTL1 [V]
Abnormality Detection Signal ST1 Output
Middle Output Impedance : RST1 [kΩ]
150
Figure 23. Motor Drive Output Lower-Side Leakage Current
vs Junction Temperature
(OUT-)
6.1
5.7
0
50
100
Junction Temperature : Tj [°C]
0.25
5.3
0.20
4.9
+150 °C
+25 °C
-40 °C
0.15
4.5
0.10
4.1
TW Detect Temperature Range
0.05
3.7
Junction Temperature Range
3.3
0.00
-50
0
50
100
150
Junction Temperature : Tj [°C]
200
0
Figure 24. Abnormality Detection Signal ST1 Output
Middle Output Impedance vs Junction Temperature
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TSZ22111 • 15 • 001
2
4
6
8
ST1 Current : IST1 [mA]
10
Figure 25. Abnormality Detection Signal ST1 Output
Low Voltage vs ST1 Current
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Typical Performance Curves - continued
(Reference Data)
0.30
10
V ST1 =7 V
Abnormality Detection Signal Output
Leakage Current : IST1 [μA]
Abnormality Detection Signal ST2 Output
Low Voltage : VSTL2 [V]
Overcurrent
Detection
0.25
0.20
+150 °C
+25 °C
-40 °C
0.15
0.10
0.05
0.00
8
6
4
2
Junction Temperature Range
0
0
2
4
6
8
ST2 Current : IST2 [mA]
10
-50
Figure 26. Abnormality Detection Signal ST2 Output
Low Voltage vs ST2 Current
0
50
100
Junction Temperature : Tj [°C]
150
Figure 27. Abnormality Detection Signal Output
Leakage Current vs Junction Temperature
(ST1)
10
2.4
Motor Drive Logic Input
High/Low Level Input Voltage : VINH/VINL [V]
Abnormality Detection Signal Output
Leakage Current : IST2 [μA]
V ST2 =7 V
8
6
4
2.0
+150 °C
+25 °C
-40 °C
1.6
+25 °C
-40 °C
150 °C
1.2
2
Junction Temperature Range
0
Operating Voltage Range
0.8
-50
0
50
100
Junction Temperature : Tj [°C]
150
0
Figure 28. Abnormality Detection Signal Output
Leakage Current vs Junction Temperature
(ST2)
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TSZ22111 • 15 • 001
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 29. Motor Drive Logic Input High/Low Level
Input Voltage vs Power Supply Voltage
(IN+)
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Typical Performance Curves - continued
(Reference Data)
100
Motor Drive Logic Input
High/Low Level Input Current : IINH/IINL [μA]
Motor Drive Logic Input
High/Low Level Input Voltage : VINH/VINL [V]
2.4
+150 °C
+25 °C
-40 °C
2.0
+25 °C
-40 °C
+150 °C
1.6
1.2
Operating Voltage Range
0.8
75
50
+150 °C
+25 °C
-40 °C
25
0
0
5
10
15
Power Supply Voltage : VVS [V]
20
0
Figure 30. Motor Drive Logic Input High/Low Level
Input Voltage vs Power Supply Voltage
(IN-)
1
2
3
IN+ Voltage : VIN+ [V]
4
5
Figure 31. Motor Drive Logic Input High/Low Level
Input Current vs Control Input Voltage
(IN+)
Power Save Input High/Low Voltage :
VPSBH/VPSBL [V]
Motor Drive Logic Input
High/Low Level Input Current : IINH/IINL [μA]
100
2.4
75
-40 °C
+25 °C
+150 °C
2.0
50
+150 °C
+25 °C
-40 °C
1.6
25
1.2
0
Operating Voltage Range
0.8
0
1
2
3
IN- Voltage : VIN- [V]
4
5
0
Figure 32. Motor Drive Logic Input High/Low Level
Input Current vs Control Input Voltage
(IN-)
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TSZ22111 • 15 • 001
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 33. Power Save Input High/Low Voltage
vs Power Supply Voltage
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Typical Performance Curves - continued
(Reference Data)
0.10
CS Pin Input Bias Current : ICS [μA]
Power Save Input High/Low Current :
IPSBH/IPSBL [μA]
100
75
50
+150 °C
+25 °C
-40 °C
25
0
0.05
0.00
-0.05
-0.10
0
1
2
3
4
PSB Voltage : VPSB [V]
5
0.0
Figure 34. Power Save Input High/Low Current vs PSB Voltage
0.2
0.4
0.6
CS Voltage : VCS [V]
0.8
1.0
Figure 35. CS Pin Input Bias Current vs CS Voltage
3.5
Motor Drive Current Detection Signal (AMPO)
Output Voltage : VAMPO [V]
0.10
VREF Pin Input Bias Current : IVREF [μA]
+150 °C
+25 °C
-40 °C
3.0
0.05
+150 °C
+25 °C
-40 °C
2.5
2.0
0.00
1.5
+150 °C
+25 °C
-40 °C
1.0
-0.05
Constant
Current PWM
Control Setting
Range:
VRVREF
0.5
-0.10
0
1
2
3
4
VREF Voltage : VVREF [V]
5
Figure 36. VREF Pin Input Bias Current vs VREF Voltage
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TSZ22111 • 15 • 001
0.0
0.00
0.25
0.50
0.75
CS Voltage : VCS [V]
1.00
Figure 37. Motor Drive Current Detection Signal (AMPO)
Output Voltage vs CS Voltage
(Motor Drive Current Setting Input Voltage Range
(Constant Current PWM Control Setting Range))
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Typical Performance Curves - continued
(Reference Data)
3.50
20
Current Limit Comparator Offset Voltage :
VOFFSET [mV]
AMPO Output Saturation Voltage :
VAMPOMAX [V]
VCS=0.7 V
3.25
+150 °C
+25 °C
-40 °C
3.00
2.75
15
10
+150 °C
+25 °C
-40 °C
5
0
-5
-10
-15
Operating Voltage Range
2.50
-20
0
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 38. AMPO Output Saturation Voltage
vs Power Supply Voltage
0.0
0.5
1.0
1.5
2.0
2.5
Motor Drive Current Detection Signal (AMPO)
Output Voltage : VAMPO [V]
Figure 39. Current Limit Comparator Offset Voltage vs
Motor Drive Current Detection Signal (AMPO) Output Voltage
0.60
2.75
VCS=0.5 V
Motor Output Current Detection Amplifier
Output Voltage 2 : VAMPO2 [V]
Motor Output Current Detection Amplifier
Output Voltage 1 : VAMPO1 [V]
VCS=0.1 V
2.65
0.55
2.55
+150 °C
+25 °C
-40 °C
0.50
+150 °C
+25 °C
-40 °C
2.45
0.45
2.35
Operating Voltage Range
0.40
Operating Voltage Range
2.25
0
5
10
15
Power Supply Voltage : VVS [V]
20
0
Figure 40. Motor Output Current Detection Amplifier
Output Voltage 1 vs Power Supply Voltage
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TSZ22111 • 15 • 001
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 41. Motor Output Current Detection Amplifier
Output Voltage 2 vs Power Supply Voltage
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BD16912EFV-C
Typical Performance Curves - continued
(Reference Data)
49.0
Motor Output Current Detection Amplifier Gain :
GAMP [V/V]
5.2
Constant Current PWM Control
Carrier Frequency : fVREF [kHz]
44.0
5.1
39.0
+150 °C
+25 °C
-40 °C
5.0
+150 °C
+25 °C
-40 °C
34.0
29.0
4.9
24.0
Operating Voltage Range
Operating Voltage Range
4.8
19.0
0
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 42. Motor Output Current Detection Amplifier Gain
vs Power Supply Voltage
0
8.0
8.0
7.0
7.0
V VS =6 V
12 V
18 V
6.0
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 43. Constant Current PWM Control Carrier Frequency
vs Power Supply Voltage
OCP Detect Current : IOCP [A]
OCP Detect Current : IOCP [A]
V VREF =1.4 V
VRNF=VCS
For Constant Current PWM Control
VCS=0.1 V to 0.5 V
5.0
4.0
V VS =6 V
12 V
18 V
6.0
5.0
4.0
Junction Temperature Range
Junction Temperature Range
3.0
3.0
-50
0
50
100
Junction Temperature : Tj [°C]
150
Figure 44. OCP Detect Current vs Junction Temperature
(OUT+ High Side)
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TSZ22111 • 15 • 001
-50
0
50
100
Junction Temperature : Tj [°C]
150
Figure 45. OCP Detect Current vs Junction Temperature
(OUT- High Side)
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BD16912EFV-C
Typical Performance Curves - continued
8.0
8.0
7.0
7.0
6.0
OCP Detect Current : IOCP [A]
OCP Detect Current : IOCP [A]
(Reference Data)
V VS =6 V
12 V
18 V
5.0
4.0
6.0
V VS =6 V
12 V
18 V
5.0
4.0
Junction Temperature Range
Junction Temperature Range
3.0
3.0
-50
0
50
100
Junction Temperature : Tj [°C]
150
-50
Figure 46. OCP Detect Current vs Junction Temperature
(OUT+ Low Side)
150
Figure 47. OCP Detect Current vs Junction Temperature
(OUT- Low Side)
0.7
8.0
OCP Output OFF Time : tOFF [ms]
0.6
OCP Output ON Time : tON [μs]
0
50
100
Junction Temperature : Tj [°C]
0.5
-40 °C
+25 °C
+150 °C
0.4
0.3
0.2
0.1
7.0
6.0
5.0
-40 °C
+25 °C
+150 °C
4.0
3.0
Operating Voltage Range
Operating Voltage Range
0.0
2.0
0
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 48. OCP Output ON Time vs Power Supply Voltage
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TSZ22111 • 15 • 001
0
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 49. OCP Output OFF Time vs Power Supply Voltage
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BD16912EFV-C
Typical Performance Curves - continued
(Reference Data)
3.0
35
OVP Hysteresis : VOVPHYS [V]
OVP Detect Voltage : VOVPON [V]
36
34
33
32
31
2.0
1.5
Junction Temperature Range
Junction Temperature Range
30
1.0
-50
0
50
100
Junction Temperature : Tj [°C]
150
-50
Figure 50. OVP Detect Voltage vs Junction Temperature
0
50
100
Junction Temperature : Tj [°C]
150
Figure 51. OVP Hysteresis vs Junction Temperature
200
50
190
40
TSD Hysteresis : TTSDHYS [°C]
TSD Detect Temperature : TTSDON [°C]
2.5
180
170
160
30
20
10
Operating Voltage Range
Operating Voltage Range
150
0
0
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 52. TSD Detect Temperature vs Power Supply Voltage
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TSZ22111 • 15 • 001
20/40
0
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 53. TSD Hysteresis vs Power Supply Voltage
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BD16912EFV-C
Typical Performance Curves - continued
(Reference Data)
40
35
175
TW Hysteresis : TTWHYS [°C]
TW Detect Temperature : TTWON [°C]
185
165
155
145
25
20
15
Operating Voltage Range
135
Operating Voltage Range
10
0
5
10
15
Power Supply Voltage : VVS [V]
20
0
Figure 54. TW Detect Temperature vs Power Supply Voltage
5
10
15
Power Supply Voltage : VVS [V]
20
Figure 55. TW Hysteresis vs Power Supply Voltage
0.80
UVLO Hysteresis : VUVLOHYS [V]
5.50
UVLO Detect Voltage : VUVLOON [V]
30
5.25
5.00
4.75
0.70
0.60
0.50
0.40
0.30
Junction Temperature Range
4.50
Junction Temperature Range
0.20
-50
0
50
100
Junction Temperature : Tj [°C]
150
Figure 56. UVLO Detect Voltage vs Junction Temperature
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TSZ22111 • 15 • 001
21/40
-50
0
50
100
Junction Temperature : Tj [°C]
150
Figure 57. UVLO Hysteresis vs Junction Temperature
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BD16912EFV-C
Typical Performance Curves - continued
(Reference Data)
100
100
V VS =28 V
Ta=25 °C
X : Breakdown Point
Drain-Source Current : IDS [A]
Drain-Source Current : IDS [A]
V VS =28 V
Ta=25 °C
10
1
Motor Drive Output Current Range
0.1
10
1
Motor Drive Output Current Range
0.1
0.1
1
10
100
Current Pulse ON Time : tDSON [ms]
1000
Figure 58. Drain-Source Current vs Current Pulse ON Time
(Motor Drive Output Channel Operating Limit,
Output High State, OUT+ Higher MOS)
0.1
1
10
100
Current Pulse ON Time : tDSON [ms]
1000
Figure 59. Drain-Source Current vs Current Pulse ON Time
(Motor Drive Output Channel Operating Limit,
Output High State, OUT- Higher MOS)
100
100
V VS =28 V
Ta=25 °C
X : Breakdown Point
Drain-Source Current : IDS [A]
V VS =28 V
Ta=25 °C
Drain-Source Current : IDS [A]
X : Breakdown Point
10
1
Motor Drive Output Current Range
0.1
X : Breakdown Point
10
1
Motor Drive Output Current Range
0.1
0.1
1
10
100
Current Pulse ON Time : tDSON [ms]
1000
Figure 60. Drain-Source Current vs Current Pulse ON Time
(Motor Drive Output Channel Operating Limit,
Output Low State, OUT+ Lower MOS)
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0.1
1
10
100
Current Pulse ON Time : tDSON [ms]
1000
Figure 61. Drain-Source Current vs Current Pulse ON Time
(Motor Drive Output Channel Operating Limit,
Output Low State, OUT- Lower MOS)
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BD16912EFV-C
Typical Performance Curves - continued
(Reference Data)
100
100
X : Breakdown Point
V VS =28 V
Ta=150 °C
Body Diode Current : ID [A]
Body Diode Current : ID [A]
V VS =28 V
Ta=150 °C
10
1
Motor Drive Output Current Range
0.1
X : Breakdown Point
10
1
Motor Drive Output Current Range
0.1
0.1
1
10
100
Current Pulse ON Time : tD [ms]
1000
Figure 62. Body Diode Current vs Current Pulse ON Time
(Motor Drive Output Body Diode Operating Limit,
Output Hi-Z State, OUT+, OUT- Higher MOS)
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TSZ22111 • 15 • 001
0.1
1
10
100
Current Pulse ON Time : tD [ms]
1000
Figure 63. Body Diode Current vs Current Pulse ON Time
(Motor Drive Output Body Diode Operating Limit,
Output Hi-Z State, OUT+, OUT- Lower MOS)
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BD16912EFV-C
Application Example
(External components can be used if necessary. Refer to the below values.)
1. Variable Speed Control Application by Direct PWM Control.
This is an application circuit example that directly PWM controls the motor drive output by the PWM duty input to the
motor drive logic input pin (IN+, IN-) and varies the motor rotation speed.
Bypass Capacitor and Voltage Clamp Zener Diodes.
Located near the power supply pin and on the side of the
current inflow path as countermeasures against power rise by
disturbance and regenerative braking
15 16
VS
Reverse Protection Diode
4
2
Controls the number
of motor rotations by
input of PWM duty
3
PSB
Power Supply
Clamper
V Source
I Source
UVLO
Power
Save
Clock
Power ON
Reset
Noise removal snubber.
Insert if necessary.
IN+
OUT+
IN–
Control
Logic
5V
Pre
Driver
H Bridge
CURRENT
LIMITATION COMP.
Controller
18
5V
1 kΩ
to 47 kΩ
AMPO
x5
M
OUT–
5
VREF
7 8
CURRENT
DETECTION
AMP.
13 14
CS
11
0Ω
to 10 kΩ 100 pF
to 1 μF
TSD
19
5V
1 kΩ
to 47 kΩ
ST1
RNF
20
ST2
9 10
0Ω
to 1 Ω
TW
OCP
GND
OVP
1 12
Because the abnormality
detection signal is an open
drain output, connect a pullup resistor externally
–
EXP-PAD
Motor drive current
detection resistor.
Pay attention to the
power consumption of
resistance.
RNF voltage false
detection prevention low
pass filter.
Insert if necessary.
Pay attention to the
common impedance with
the current detection path.
Figure 64. Direct PWM Control Application Circuit
OUT± Pins
Current: IO [A]
When VREF voltage＞3.2 V
(Current Limit Function OFF)
ISET
Current limit setting (ISET) can
be varied by VREF voltage
0
100
IN± Pins
PWM Input
ON Duty
DIN [%]
Figure 65. OUT± Pins Current vs VREF Pin Input Voltage
Characteristic Image
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Application Example - continued
(External components can be used if necessary. Refer to the below values.)
2. Variable Speed Control Application by Constant Current PWM Control
This is an application circuit example in which the motor drive output is subjected to constant current PWM control
depending on the DC voltage that is input to the motor drive current setting voltage input pin (VREF), and varies the
motor rotation speed.
Bypass Capacitor and Voltage Clamp Zener Diodes.
Located near the power supply pin and on the side of the
current inflow path as countermeasures against power rise by
disturbance and regenerative braking
15 16
VS
Power Supply
Clamper
V source
I Source
UVLO
Power
Save
Clock
Power ON
Reset
Noise removal snubber.
Insert if necessary.
Reverse protection diode
4
Input is used to
change the output
state (Forward,
reverse, idling and
brake)
2
3
PSB
IN+
OUT+
IN–
Control
Logic
H Bridge
CURRENT
LIMITATION COMP.
Controller
18
5V
1 kΩ
to 47 kΩ
AMPO
x5
M
OUT–
5
VREF
Output current is
controlled by DC
voltage to apply on
VREF pin
Pre
Driver
7 8
CURRENT
DETECTION
AMP.
13 14
CS
11
0Ω
to 10 kΩ 100 pF
to 1 μF
TSD
19
5V
1 kΩ
to 47 kΩ
ST1
RNF
9 10
0Ω
to 1 Ω
TW
20
ST2
OCP
GND
OVP
1 12
Because the abnormality
detection signal is an open
drain output, connect a pullup resistor externally
–
EXP-PAD
Motor drive current
detection resistor.
Pay attention to the
power consumption of
resistance.
RNF voltage false
detection prevention low
pass filter.
Insert if necessary.
Pay attention to the
common impedance with
the current detection path.
Figure 66. Constant Current PWM Control Application Circuit
OUT± Pins
Current: IO [A]
0
Depending on the
RNF resistance and
Input Duty, output
current adjustment
is possible
3.0(Typ)
VREF Pin
Input Voltage
VVREF [V]
Figure 67. VREF Pin Input Voltage vs OUT± Pins Current
Characteristic Image
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Description of Blocks
1. Under Voltage Lock Out: UVLO.
When the voltage applied to the VS pin becomes 5.0 V (Typ) or less, the driver output becomes Hi-Z.
It returns when the voltage applied to the VS pin becomes 5.5 V (Typ) or more.
UVLO function, and Abnormality Detection Signal Output ST1 and ST2 are not linked.
Normal
VS
Protection
VUVLOOFF=5.5 V (Typ)
Normal
VUVLOHYS=0.5 V(Typ)
VUVLOON=5.0 V(Typ)
ACTIVE
OUT+,OUTHi-Z
Figure 68. UVLO Timing Chart
2. Over Voltage Protection: OVP
When the voltage applied to the VS pin becomes 33 V (Typ) or more, the driver output and the ST2 output becomes
Low.
If the driver output is HI-Z during this state, output remains at HI-Z
It returns when the voltage applied to the VS pin becomes 31 V (Typ) or less.
Normal
Protection
Normal
VOVPON =33 V(Typ)
VS
VOVPHYS =2 V(Typ)
VOVPOFF =31 V(Typ)
ACTIVE
OUT+,OUTL
H
ST1
L
H
ST2
L
Figure 69. OVP Timing Chart
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Description of Blocks - continued
3. Over Current Protection: OCP
When the output current exceeds the rated current, OCP is detected at OUT+/OUT– pins, higher/lower sides respectively
and both the driver outputs (OUT+/OUT–) go to Hi-Z at the same time. The driver output turns ON for tON=0.4 μs (Typ)
or more and turns OFF for tOFF=4 ms (Typ).
If overcurrent state is continued, Hi-Z is repeated again. Also, when overcurrent is detected, ST1 goes low and retains
low while the overcurrent continues.
ST1 goes high after tMASK=1 ms (Typ) once recovering from overcurrent.
Output Load: Abnormal
Output Load: Normal
Output Load: Normal
ACTIVE
OUT+,OUTHi-Z
IOCP
IO
0
tON
tOFF
t ON
tOFF
t ON
tOFF
H
ST1
L
t MASK
H
ST2
L
Figure 70. OCP Timing Chart
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Description of Blocks - continued
4. Thermal Warning: TW, Thermal Shutdown: TSD
To prevent IC from thermal destruction, thermal warning and thermal shutdown are built-in.
Make sure that the junction temperature Tj is 150 °C and below, but if that is crossed by any possibility, and the junction
temperature reaches 160 °C (Typ) or higher, the thermal warning is in operation and ST1 pin voltage VST1 depends on
the pull up resistance value.
The formula is as follows.
VPULLUP (External)
𝑉𝑆𝑇1 = 𝑅
𝑅𝑆𝑇1
𝑆𝑇1 ×𝑅𝑃𝑈𝐿𝐿𝑈𝑃
R PULLUP (External )
𝑉𝑃𝑈𝐿𝐿𝑈𝑃 [V]
ST1(Pin19 )
VST1
R ST1(Internal)=4.7 kΩ(Typ)
where:
VPULLUP is ST1 pin resistance pull up power supply voltage.
RPULLUP is ST1 pin pull up resistance value.
RST1 is ST1 pin internal impedance for thermal warning.
NMOS(Internal):ON at TW
Figure 71. ST1 Pin Circuit for TW
RST1 is 4.7 kΩ (Typ).
If VPULLUP=5V for example, VST1=2.5 V (Middle) for RPULLUP=4.7 kΩ, VST1=0.45 V (Low) for RPULLUP=47 kΩ.
When the junction temperature further rises to 175 °C (Typ) or more, TSD is in operation and sets the driver output to
Hi-Z. After that, when the temperature reaches 150 °C (Typ) or less, the driver output returns, and when the temperature
reaches 135 °C (Typ) or less, ST1 also returns.
Note: While the thermal warning and thermal shutdown is in operation, ST1 goes the above voltage VST1, but since it is
in the state exceeding the rated temperature, there is a possibility that the state of ST1 and other functions cannot be
retained.
Thermal Warning(TW)
Normal
Normal
Thermal Shutdown(TSD)
TTSDON =175 °C(Typ)
Tj
TTSDHYS =25 °C(Typ)
TTWON =160 °C(Typ)
TTWHYS =25 °C(Typ)
TTSDOFF =150 °C(Typ)
TTWOFF =135 °C(Typ)
ACTIVE
OUT+,OUTHi-Z
H
ST1
M
L
H
ST2
L
Figure 72 TW, TSD Timing Chart
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Description of Blocks - continued
5. Direct PWM Control
Direct PWM control by IN+ and IN- pins is possible.
There is no restriction to input for pin switching order of PSB, IN+ and IN-.
Regarding the DECAY mode, it supports both SLOW DECAY and FAST DECAY modes.
Because of RNF pin voltage and the output pin voltage may swing to GND or less at the FAST DECAY status, set within
the absolute maximum ratings.
SLOW DECAY (Forward Rotation)
Driver Input
PSB
IN+
IN–
H
H
L
H
H
H
H
H
L
H
H
H
H
H
L
Driver Output
OUT+
OUT–
H
L
L
L
H
L
L
L
H
L
State
ON
SLOW DECAY
ON
SLOW DECAY
ON
FAST DECAY (Synchronous Rectification, Forward Rotation)
Driver Input
Driver Output
PSB
IN+
IN–
OUT+
OUT–
H
H
L
H
L
H
L
H
L
H
H
H
L
H
L
H
L
H
L
H
H
H
L
H
L
SLOW DECAY
H
IN+
State
ON
FAST DECAY
ON
FAST DECAY
ON
FAST DECAY
H
L
INOUT+
H
H
L
L
H
H
L
L
H
OUT-
L
L
IO
(1) (2)
(1) (2)
(1)Output ON (2)Current Decay
Figure 73. I/O Waveform of Each DECAY Mode
SLOW DECAY
ON→OFF
FAST DECAY
OFF
ON→OFF
M
OFF→ON
OFF→ON
M
ON
OFF→ON
(1) Output ON
(2) Current Decay
ON→OFF
(1) Output ON
(2) Current Decay
Figure 74. Current Path of Each DECAY Mode
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Description of Blocks - continued
6. Output Current Detection Amp (AMPO Pin)
The AMPO pin outputs GAMP=5 times (Typ) of the CS pin voltage with reference to the ground voltage.
For example, VAMPO=0.5 V (Typ) for VCS=0.1 V.
By connecting the current detection resistor RRNF to the RNF pin and connecting it with the CS pin, the AMPO pin voltage
can be used for output current monitoring.
In the case that this function is not used, set the AMPO pin to OPEN.
The AMPO pin has the circuit to limit the output voltage internally. The limit voltage is VAMPOMAX is 3 V (Typ).
When the AMPO pin voltage exceeds 3.6 V, the test mode function for Mass Production check is enabled and the driver
output is set to Hi-Z. Do not exceed the pin rated 3.6 V and add a capacitor between AMPO pin and GND if necessary
to smooth AMPO pin voltage. In case of that AMPO pin has 25 kΩ (Typ) resistance as output impedance internally and
there will be delay due to additional capacitor and time constant of internal resistance. Note: The delay has effect on
constant current PWM control.
In the case of constant current PWM control and the output current detection amplifier not being used together, set the
VREF pin to be 3.2 V or higher and 7 V or lower, and connect the RNF pin and CS pin to the ground.
7. Constant Current PWM Control (Current Limit)
Constant current PWM control with VREF pin is possible.
The motor drive current ISET can be set by the VREF pin voltage VVREF, the current detection resistor RRNF connected to
the RNF pin, and the current detection amplifier gain GAMP.
The relation between ISET, VVREF, RRNF and GAMP is given below.
𝐼𝑆𝐸𝑇 = 𝐺
𝑉𝑉𝑅𝐸𝐹
𝐴𝑀𝑃 ×𝑅𝑅𝑁𝐹
[A]
The constant current PWM control setting range of VREF pin VRVREF is 0 V to 2.8 V and it is the output range for PWM.
If ISET tends to 0, percentage error of IO with ISET increases. Consider the below following characteristic and use in the
appropriate range according to applications. However, this reference characteristic isn't guaranteed value but evaluation
value.
Error of IO with ISET : ((IO-ISET)/ISET) [%]
50
VVS=12 V
VPSB=5 V
VIN+=5 V
VIN-=0 V
VCS=RNF
Motor Inductance=2.3 mH
40
30
20
10
0
0
50
100
150
200
Motor Drive Current : ISET [mA]
250
Figure 75. Error of IO with ISET ((IO-ISET)/ISET) vs Motor Drive Current ISET
(Reference Data)
The voltage generated at the RNF pin is detected from the CS pin. If necessary, a low-pass filter can be added between
the RNF pin and the CS pin to smooth the RNF pin voltage fluctuation.
Carrier frequency is 33 kHz (Typ).
In the case of constant current PWM control and the output current detection amplifier not being used together, set the
VREF pin to be 3.2 V or higher and 7 V or lower, and connect the RNF pin and CS pin to the ground.
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7. Constant Current PWM Control (Current Limit) - continued
Ex. VREF=1 V
IN+
INVREF
Internal Clock
OUT+
OUT-
Ex. VREF=2 V
H
H
L
L
2V
1V
H
H
L
L
H
H
L
L
L
L
RNF
CS
IO
ISET
ISET
𝐼𝑆𝐸𝑇 = 𝐺
1
𝐴𝑀𝑃 ×𝑅𝑅𝑁𝐹
[A]
𝐼𝑆𝐸𝑇 = 𝐺
2
𝐴𝑀𝑃 ×𝑅𝑅𝑁𝐹
[A]
Figure 76. I/O Waveform during Constant Current PWM Control
8. Power Save (PSB Pin)
IC internal circuits can be used as power saved state and power consumption can be reduced by lowering PSB pin
voltage. Driver output goes Hi-Z at the time. Refer I/O truth table for details of other pin state.
There is no restriction to input for pin switching order of PSB, IN+ and IN-.
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I / O Equivalence Circuits (Resistance Values are Typical)
2.IN+, 3.IN–
4.PSB
Internal
Regulator
30 kΩ
Pin4
10 kΩ
Pin2,3
100 kΩ
20 kΩ
50 kΩ
100 kΩ
Pin1,12
Pin1,12
Pin1,1 2
Pin1,12
Pin1,1 2
Pin1,1 2 Pin1,12
Pin1,1 2
5.VREF
7,8.OUT+, 9,10.RNF, 13,14.OUT–
Internal
Regulator
Pin15,1 6
10 kΩ
Pin7, 8, 13, 14
10 kΩ
Pin5
Pin9,10
Pin1,12
Pin1,12
11.CS
15,16.VS
Internal
Regulator
Pin15,16
10 kΩ
Pin1 1
Pin1,12
Pin1,1 2
18.AMPO
19.ST1
Internal
Regulator
Internal
Regulator
15 Ω
Pin19
4.7 kΩ
Pin18
25 kΩ
20 kΩ
1 kΩ
Internal
Regulator
5 kΩ
Pin1,12
Pin1,1 2 Pin1,1 2 Pin1,12 Pin1,12
20.ST2
Pin1,1 2
Pin1,12
-
15 Ω
Pin20
-
Pin1,12
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Heat Loss
1. Thermal Resistance
The heat generated by the consumption of power by the IC is dissipated from the mold resin of the package or the lead
frame etc.
The parameter indicating the heat dissipation property (heat dissipation difficulty) is called thermal resistance, and the
thermal resistance from the chip junction to the ambient environment in the board mounted state is represented by θja
[°C/W], and the thermal characteristic parameter from the chip junction to top surface center of package is expressed
as ψjt [°C/W].
The thermal resistance is divided into the package part and the substrate part, the thermal resistance of the package
part depends on the constituent material such as the mold resin or the lead frame etc., on the other hand, the thermal
resistance of the substrate part depends on the substrate heat dissipation properties such as quality of material, size,
copper foil area etc.
Therefore, by heat dissipating counter-measures like installing a heat sink on the mounting board, thermal resistance
can be reduced.
The thermal resistance model is shown in Figure 77, and the thermal resistance calculation formula is shown in Equation
1, Equation 2 respectively.
Tj Ta
[C/W] (Equation 1)
P
Tj Tt
jt
[C/W] (Equation 2)
P
ja
Ambient Temperature Ta[°C]
θja[°C/W]
θja: Thermal Resistance from the Junction to the Ambient
Package Surface Temperature Tt[°C]
Chip Junction Temperature Tj[°C]
Environment [°C/W]
ψjt: Thermal Characteristic Parameter from the Junction to
Top Surface Center of Package [°C/W]
Tj: Junction Temperature [°C]
Ta: Ambient Temperature [°C]
Tt: Package Surface Temperature [°C]
P: Power Consumption [W]
ψjt[°C/W]
Backside Heat Sink
Mounting Board
Figure 77. Thermal Resistance Model of
Backside Exposed Package with Heat Sink
Thermal resistances θja, ψjt vary depending on the measurement environment such as chip size or
power consumption of the mounted IC, and ambient temperature, mounting conditions, wind speed, etc.
even if the same package is used.
2. Power Dissipation
Power dissipation (total loss) is the power that the IC can consume at ambient temperature Ta = 25 °C (normal
temperature). The IC generates heat when it consumes electric power, and the temperature of the IC chip becomes
higher than the ambient temperature. The allowable temperature of the IC chip in the package (the junction temperature
specified by the absolute maximum rating) is determined by the circuit configuration or the manufacturing process etc.
Power dissipation is determined by its maximum junction temperature, thermal resistance in board mounted condition,
and ambient temperature.
3. Thermal De-rating Curve
The thermal de-rating curve shows the power (power dissipation) that the IC can consume against the ambient
temperature. The power dissipation decays from ambient temperature 25 °C, and becomes zero at the maximum
junction temperature 150 °C. The slope is reduced by the reciprocal of the thermal resistance θja.
5.0
(1) 4.66 W
Ta=25 °C
4.5
Power dissipation: Pd[W]
4.0
3.5
Ta=25 °C or higher, it is reduced with a
slope of 1 / θja
(1) 114.3 mm x 76.2 mm x 1.6 mmt
FR-4 4 layer substrate (Backside
copper foil area 74.2 mm x 74.2 mm)
(2) 114.3 mm x 76.2 mm x 1.57 mmt
FR-4 1 layer substrate
3.0
2.5
(1) 0.93 W, Ta=125 °C
(2) 0.17 W, Ta=125 °C
2.0
1.5
1.0
(2) 0.87 W
Ta=25 °C
(1) –1/θja=–37.3 [mW/°C]
(2) –1/θja=–7.0 [mW/°C]
0.5
0
25
50
75
100
Ambient Temperature: Ta[°C]
125
150
Figure 78. Thermal De-rating Curve by Mounting Board (Reference Value)
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Safety Measures
1. Countermeasure against Destruction of Reverse Connection Power Supply
In reverse connection of the power supply, current flows through a route different from the normal one, which may cause
IC breakdown or deterioration. If there is a possibility of reverse connection, it is necessary to insert the reverse
connection breakdown prevention diode between power supply and power supply pin.
During normal energization
Without reverse connection prevention measure
Reverse protection diode insertion
During reverse connection of power supply
During reverse connection of power supply
VS
VS
Circuit
VS
I/O
I/O
Circuit
block
Circuit
block
GND
I/O
block
GND
GND
Internal circuit impedance is high
High current flow
Low current flow
Thermal destruction, detorioration
Will not destroy
Figure 79. Current Flow during Supply Power Reverse Connection
2. Measures to Raise the Power Supply Pin Voltage by Back Electromotive Force
Back EMF generates regenerative current to supply power-source. However, when the reverse connection breakdown
prevention diode is connected, or when the power source supplied does not have sufficient current absorption ability,
the power supply pin and motor drive output pin voltage will rise during regenerative braking.
ON
Phase
switching
M
M
ON
ON
ON
Figure 80. Power Supply Pin and Motor Drive Output Pin Voltage Rise by Back Electromotive Force
If there is a possibility of exceeding the absolute maximum rating due to voltage rise by the back electromotive force,
connect a capacitor, a Zener diode, or both as a regenerative current path between the power supply pin and the ground
pin. Also connect a Zener diode between output pin and the ground pin.
M
ON
ON
Figure 81. Voltage Rise Countermeasure of Power Supply Pin and Output Pin during Regenerative Braking
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Safety Measures - continued
3. Countermeasures against Unstable Power Supply
If there is a possibility that the power supply pin may exceed the absolute maximum rating or the reduced voltage
malfunction prevention is operating due to the fluctuation of the power supply, insert an inductor such as a resistor or
ferrite beads between the supplied power and the power supply pin and then form a filter.
In that case, use a bypass capacitor together, lower the impedance of the power supply line and supply a stable voltage
to the driver.
Motor Unit
Motor Unit
Driver
Driver
＋
Inductor
＋
Resistor
VS
VS
Connector
Connector
－
－
GND
GND
Connector
Connector
Place the bypass capacitor near the power supply pin
Place the bypass capacitor near the power supply pin
Figure 83. Stable Power Supply
Measure (LC Filter)
Figure 82. Stable Power Supply
Measure (RC Filter)
4. Prohibition of Ground Line PWM Switching Input
The control method of varying the motor speed by PWM switching the ground line is prohibited as it cannot keep the IC
ground pin at the lowest potential.
Motor Unit
Driver
＋
Controller
VS
OUT+
PWM Input
M
RNF
Prohibition
－
OUT−
GND
Figure 84. Prohibition of Ground Line PWM Switching
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Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,
pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground
due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below
ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions
such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
6.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
7.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
8.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
10. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
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Operational Notes – continued
11. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
N
P+
P
N
N
P+
N
Pin B
B
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
GND
Parasitic
Elements
GND
Parasitic
Elements
GND
N Region
close-by
Figure 85. Example of Monolithic IC Structure
12. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
13. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within
the Area of Safe Operation (ASO).
14. Thermal Shutdown Circuit (TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj
falls below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
15. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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BD16912EFV-C
Ordering Information
B
D
1
6
9
1
2
E
F
V
―
C
E
2
Parts Number
Package Type
･EFV; HTSSOP-B20
Product Rank
Packaging Specification
･C; for Automotive
･E2; Embossed Type and Reel
Marking Diagram
HTSSOP-B20 (TOP VIEW)
Part Number Marking
1 6 9 1 2
LOT Number
Pin 1 Mark
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BD16912EFV-C
Physical Dimension and Packing Information
Package Name
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BD16912EFV-C
Revision History
Date
Revision
20.Mar.2018
001
Contents
Newly created
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Notice
Precaution on using ROHM Products
1.
(Note 1)
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Datasheet
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3.
The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
