Datasheet
1 Channel Compact High Side Switch ICs
Current Limit High Side Switch ICs
BD226xG-M Series
General Description
Key Specifications
BD226xG-M series are low on-resistance N-channel
MOSFET high-side power switches, optimized for
Universal Serial Bus (USB) applications. BD226xG-M
series are equipped with the function of over-current
detection, thermal shutdown, under-voltage lockout
and soft-start.
Input Voltage Range:
2.7V to 5.5V
ON-Resistance:
120mΩ(Typ)
Over-Current Threshold:
0.3A, 0.76A, 0.97A
Standby Current:
0.01µA (Typ)
Operating Temperature Range:
-40°C to +85°C
Package
W(Typ)
D(Typ)
H(Max)
Features
AEC-Q100 Qualified
Over Current Protection
0.3A: BD2262G-M
0.76A: BD2264G-M / BD2265G-M
0.97A: BD2266G-M / BD2267G-M
Built-in Low ON-Resistance (Typ 120mΩ)
N-Channel MOSFET
Reverse Current Protection when
Power Switch Off
Thermal Shutdown
Under-Voltage Lockout
Open-Drain Error Flag Output
Output Discharge Function
Soft Start Circuit
Control Input Logic
Active-High:
BD2262G-M /BD2264G-M /BD2266G-M
Active-Low:
BD2265G-M /BD2267G-M
SSOP5
2.90mm x 2.80mm x 1.25mm
Applications
Car accessory, Industrial applications
Typical Application Circuit
5V (Typ)
3.3V
CIN
IN
OUT
+
GND
10kΩ to
100kΩ
CL
-
EN
/OC
Lineup
Min
0.2A
Over-Current Threshold
Typ
Max
0.3A
0.4A
Control Input
Logic
Package
Orderable Part Number
High
SSOP5
Reel of 3000
BD2262G-MGTR
0.63A
0.76A
0.9A
High
SSOP5
Reel of 3000
BD2264G-MGTR
0.63A
0.76A
0.9A
Low
SSOP5
Reel of 3000
BD2265G-MGTR
0.82A
0.97A
1.12A
High
SSOP5
Reel of 3000
BD2266G-MGTR
0.82A
0.97A
1.12A
Low
SSOP5
Reel of 3000
BD2267G-MGTR
○Product structure：Silicon monolithic integrated circuit
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TSZ22111・14・001
○This product has not designed protection against radioactive rays
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Datasheet
BD226xG-M Series
Block Diagram
OUT
IN
Pin Configurations
TOP VIEW
1
OUT 5
IN
2 GND
3 EN,/EN
/OC 4
Pin Description
Pin No.
Symbol
I/O
Function
1
IN
-
Switch input and the supply voltage for the IC.
2
GND
-
Ground.
3
EN, /EN
I
4
/OC
O
5
OUT
O
Enable input.
EN: High level input turns on the switch.(BD2262G-M, BD2264G-M, BD2266G-M)
/EN: Low level input turns on the switch. (BD2265G-M, BD2267G-M )
Over-current detection terminal.
Low level output during over-current or over-temperature condition.
Open-drain fault flag output.
Switch output.
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Datasheet
BD226xG-M Series
Absolute Maximum Ratings (Ta=25°C)
Parameter
IN Supply Voltage
EN(/EN) Input Voltage
/OC Voltage
Symbol
Rating
Unit
VIN
-0.3 to +6.0
V
VEN, V/EN
-0.3 to +6.0
V
V/OC
-0.3 to +6.0
I/OC
5
V
mA
OUT Voltage
VOUT
-0.3 to +6.0
V
Storage Temperature
Tstg
-55 to +150
°C
/OC Sink Current
Power Dissipation
Pd
0.67
(Note 1)
W
(Note 1) Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 5.4mW per 1°C above 25°C
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated
over the absolute maximum ratings.
Recommended Operating Conditions
Parameter
Symbol
IN Operating Voltage
Operating Temperature
Rating
Unit
Min
Typ
Max
VIN
2.7
5.0
5.5
V
Topr
-40
-
+85
°C
Electrical Characteristics
(VIN= 5V, Ta= 25°C, unless otherwise specified.)
DC Characteristics
Parameter
Symbol
Limit
Unit
Conditions
Min
Typ
Max
-
135
175
-
110
160
ISTB
-
0.01
5
µA
VENH(/ENH)
2.0
-
-
V
VEN = 5V (BD2262G-M)
VOUT = open
VEN = 5V (BD2264/ 66G-M)
V/EN = 0V (BD2265/ 67G-M)
VOUT = open
VEN = 0V (BD2262/ 64/ 66G-M)
V/EN = 5V (BD2265/ 67G-M)
VOUT = open
High Input, VIN=3.3 to 5V
VENL(/ENL)
-
-
0.8
V
Low Input, VIN=5V
Operating Current
µA
IDD
Standby Current
EN Input Voltage
EN Input Leakage
ON-Resistance
Reverse Leak Current
Over-Current Threshold
Short Circuit Output Current
VENL(/ENL)
-
-
0.6
V
Low Input, VIN=3.3V
IEN(/EN)
-1
+0.01
+1
µA
-
120
165
-
140
190
-
-
1.0
VEN(/EN) = 0V or 5V
VIN=5V
IOUT = 100mA (BD2262G-M)
IOUT = 500mA (BD2264/ 65/ 66/ 67G-M)
VIN=3.3V
IOUT = 100mA (BD2262G-M)
IOUT = 500mA (BD2264/ 65/ 66/ 67G-M)
VOUT = 5.0V, VIN = 0V
200
300
400
VIN = 5V
190
290
390
VIN = 3.3V
630
765
900
600
740
890
820
970
1120
VIN = 5V
730
940
1110
VIN = 3.3V
100
200
300
RON
IREV
ITH
ISC
mΩ
350
500
650
500
650
850
µA
mA
VIN = 5V
VIN = 3.3V
mA
30
60
120
Ω
IDISC = 1mA
/OC Output Low Voltage
V/OC
-
-
0.4
V
I/OC = 0.5mA
VTUVH
2.1
2.3
2.5
V
VIN Increasing
VTUVL
2.0
2.2
2.4
V
VIN Decreasing
3/34
BD2266/ 67G-M
BD2264/ 65G-M
BD2266/ 67G-M
RDISC
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TSZ22111・15・001
BD2264/ 65G-M
BD2262G-M
VIN=3.3 to 5V
VOUT = 0V, RMS
Output Discharge Resistance
UVLO Threshold
BD2262G-M
TSZ02201-0R5R0H300010-1-2
03.Feb.2014 Rev.001
Datasheet
BD226xG-M Series
AC Characteristics
Parameter
Limit
Symbol
Min
Typ
Max
Unit
Output Rise Time
tON1
-
1
6
ms
Output Turn ON Time
tON2
-
1.5
10
ms
Output Fall Time
tOFF1
-
1
20
µs
Output Turn OFF Time
tOFF2
-
3
40
µs
/OC Delay Time
t/OC
10
15
20
ms
Conditions
BD2262G-M:
RL = 500Ω
BD2264/ 65/ 66/ 67G-M:
RL = 20Ω
Measurement Circuit
VIN
VIN
A
A
IN
OUT
1µF
RL
GND
VEN(/EN)
GND
VEN(/EN)
/OC
EN(/EN)
A.
OUT
IN
1µF
Operating Current
B.
EN(/EN)
/OC
EN, /EN Input Voltage, Output Rise / Fall Time
VIN
VIN
10kΩ
A
A
IOC
OUT
IN
1µF
1µF
IOUT
GND
VEN(/EN)
C.
OUT
IN
VEN(/EN)
/OC
EN(/EN)
GND
ON-Resistance, Over-Current Detection
D.
EN(/EN)
/OC
/OC Output Low Voltage
Figure 1. Measurement Circuit
Timing Diagram
VEN
VENL
VENH
V/EN
tON2
tON2
tOFF2
90%
VOUT
VOUT
10%
tON1
90%
10%
10%
tON1
tOFF1
Figure 2. Output Rise / Fall Time
(BD2262G-M, BD2264G-M, BD2266G-M)
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TSZ22111・15・001
tOFF2
90%
90%
10%
V/ENH
V/ENL
tOFF1
Figure 3. Output Rise / Fall Time
(BD2265G-M, BD2267G-M)
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Datasheet
BD226xG-M Series
Typical Performance Curves
(BD226xG-M)
1.0
1.0
VIN=5.0V
0 .8
Standby Current : ISTB[µA]
Standby Current : ISTB[µA]
Ta=25°C
0 .6
0 .4
0 .2
0.8
0.6
0.4
0.2
0.0
0 .0
2
3
4
5
Supply Voltage : VIN[V]
-50
6
50
100
Figure 5. Standby Current vs Ambient Temperature
(EN, /EN Disable)
Figure 4. Standby Current vs Supply Voltage
(EN, /EN Disable)
2.0
2.0
Ta=25°C
1.5
VIN=5.0V
Enable Input Voltage : VEN, V/EN[V]
Enable Input Voltage : VEN, V/EN[V]
0
Ambient Temperature : Ta[°C]
Low to High
High to Low
1.0
0.5
0.0
Low to High
1.5
High to Low
1.0
0.5
0.0
2
3
4
5
6
-50
Supply Voltage : VIN[V]
Figure 6. EN, /EN Input Voltage vs
Supply Voltage
(VENH, VENL, V/ENH, V/ENL)
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TSZ22111・15・001
0
50
100
Ambient Temperature : Ta[°C]
Figure 7. EN, /EN Input Voltage vs
Ambient Temperature
(VENH, VENL, V/ENH, V/ENL)
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Datasheet
BD226xG-M Series
Typical Performance Curves - continued
(BD226xG-M)
200
200
VIN=5.0V
ON-Resistance : RON[mΩ]
ON-Resistance : RON[mΩ]
Ta=25°C
150
100
50
150
100
50
0
0
2
3
4
5
-50
6
Supply Voltage : VIN[V]
Figure 8. ON-Resistance vs Supply Voltage
50
100
Figure 9. ON-Resistance vs Ambient Temperature
100
100
VIN=5.0V
/OC Output Low Voltage: V/OC [mV]
Ta=25°C
/OC Output Low Voltage: V/OC [mV]
0
Ambient Temperature : Ta[°C]
80
60
40
20
0
80
60
40
20
0
2
3
4
5
6
-50
50
100
Ambient Temperature : Ta[°C]
Supply Voltage : VIN[V]
Figure 10. /OC Output Low Voltage vs
Supply Voltage
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0
Figure 11. /OC Output Low Voltage vs
Ambient Temperature
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03.Feb.2014 Rev.001
Datasheet
BD226xG-M Series
Typical Performance Curves - continued
(BD226xG-M)
1.0
UVLO Hysteresis Voltage: VHYS[V]
UVLO Threshold: VTUVH, VTUVL [V]
2.5
2.4
2.3
VTUVH
2.2
VTUVL
2.1
2.0
0.8
0.6
0.4
0.2
0.0
-50
0
50
Ambient Temperature: Ta [°C]
100
-50
Figure 12. UVLO Threshold Voltage vs
Ambient Temperature
100
Figure 13. UVLO Hysteresis Voltage vs
Ambient Temperature
20
20
VIN=5.0V
Ta=25°C
18
[ms]
/OC
DELAY
TIME:t:/OC
/OC
/OC
Delay TIME
Time:
[ms]
/OC
DDLAY
Tt/OC
[ms]
[ms]
/OC
DELAY
TIME :t:/OC
/OC
/OC
Tt/OC
/OCDDLAY
Delay TIME
Time:
[ms]
0
50
Ambient Temperature: Ta [°C]
16
14
12
10
18
16
14
12
10
2
3
4
5
SUPPLY
VOLTAGE
:
V
IN
Supply Voltage: VIN [V][V]
6
-50
Figure 14. /OC Delay Time vs
Supply Voltage
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TSZ22111・15・001
0
50
AMBIENT
TEMPERATURE
Ambient Temperature: Ta: Ta[
[°C]℃]
100
Figure 15. /OC Delay Time vs
Ambient Temperature
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Datasheet
BD226xG-M Series
Typical Performance Curves - continued
(BD226xG-M)
200
Ta=25°C
Output Disharge Resistance: RDISC [Ω]
Output Discharge Resistance: RDISC [Ω]
200
150
100
50
0
VIN=5.0V
150
100
50
0
2
3
4
5
6
-50
Supply Voltage: VIN [V]
50
100
Ambient Temperature: Ta [°C]
Figure 16. Output Discharge Resistance vs
Supply Voltage
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0
Figure 17. Output Discharge Resistance vs
Ambient Temperature
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Datasheet
BD226xG-M Series
Typical Performance Curves - continued
(BD2262G-M)
160
160
VIN=5.0V
120
120
DD
[µA]
140
100
Operating Current : I
Operating Current : I
DD
[µA]
Ta=25°C
140
80
60
40
20
100
80
60
40
20
0
0
2
3
4
5
Supply Voltage : VIN [V]
6
-50
100
Figure 19. Operating Current vs Ambient
Temperature
EN Enable
Figure 18. Operating Current vs Supply Voltage
EN Enable
0.6
0.6
Ta=25°C
VIN=5.0V
0.5
Over Current Threshold : ITH [A]
0.5
Over Current Threshold : ITH [A]
0
50
Ambient Temperature : Ta [°C]
0.4
0.3
0.2
0.1
0.4
0.3
0.2
0.1
0.0
0.0
2
3
4
5
Supply Voltage : VIN [V]
-50
6
Figure 20. Over-Current Threshold vs
Supply Voltage
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TSZ22111・15・001
0
50
Ambient Temperature : Ta [°C]
100
Figure 21. Over-Current Threshold vs
Ambient Temperature
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03.Feb.2014 Rev.001
Datasheet
BD226xG-M Series
Typical Performance Curves - continued
(BD2262G-M)
5.0
5.0
Ta=25°C
VIN=5.0V
4.0
Rise Time : T ON1 [ms]
Rise Time : T ON1 [ms]
4.0
3.0
2.0
1.0
3.0
2.0
1.0
0.0
0.0
2
3
4
5
Supply Voltage : VIN [V]
6
-50
Figure 22. Output Rise Time vs
Supply Voltage
100
Figure 23. Output Rise Time vs
Ambient Temperature
5.0
5.0
VIN=5.0V
Ta=25°C
4.0
Turn On Time : T ON2 [ms]
4.0
Turn On Time : T ON2 [ms]
0
50
Ambient Temperature : Ta [°C]
3.0
2.0
3.0
2.0
1.0
1.0
0.0
0.0
2
3
4
5
Supply Voltage : VIN [V]
6
Figure 24. Output Turn-on Time vs
Supply Voltage
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TSZ22111・15・001
-50
0
50
Ambient Temperature : Ta [°C]
100
Figure 25. Output Turn-on Time vs
Ambient Temperature
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Datasheet
BD226xG-M Series
Typical Performance Curves - continued
(BD2262G-M)
5.0
5.0
Ta=25°C
VIN=5.0V
4.0
Fall Time : T OFF1 [µs]
Fall Time : T OFF1 [µs]
4.0
3.0
2.0
1.0
3.0
2.0
1.0
0.0
0.0
2
3
4
5
Supply Voltage : VIN [V]
6
-50
0
50
Ambient Temperature : Ta [°C]
Figure 26. Output Fall Time vs
Supply Voltage
Figure 27. Output Fall Time vs
Ambient Temperature
6.0
6.0
VIN=5.0V
Ta=25°C
5.0
[µs]
5.0
4.0
OFF2
4.0
Turn-off Time : T
Turn-off Time : T OFF2 [µs]
100
3.0
2.0
3.0
2.0
1.0
1.0
0.0
0.0
2
3
4
5
Supply Voltage : VIN [V]
6
0
50
Ambient Temperature : Ta [°C]
100
Figure 29. Output Turn-off Time vs
Ambient Temperature
Figure 28. Output Turn-off Time vs
Supply Voltage
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-50
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Datasheet
BD226xG-M Series
Typical Performance Curves - continued
(BD2264G-M, BD2265G-M)
140
140
Ta=25°C
VIN=5.0V
120
Operating Current : IDD[µA]
Operating Current : IDD[µA]
120
100
80
60
40
20
100
80
60
40
20
0
0
2
3
4
5
6
-50
0
100
Ambient Temperature: Ta [°C]
Supply Voltage : VIN[V]
Figure 30. Operating Current vs Supply Voltage
(EN, /EN Enable)
Figure 31. Operating Current vs Ambient Temperature
(EN, /EN Enable)
1.0
1.0
Ta=25°C
VIN=5.0V
0.9
Over Current Threshold: ITH[A]
Over Current Threshold: ITH[A]
50
0.8
0.7
0.6
0.5
0.4
0.9
0.8
0.7
0.6
0.5
0.4
2
3
4
5
6
-50
0
50
Supply Voltage: VIN [V]
Ambient Temperature: Ta [°C]
Figure 32. Over-Current Threshold vs
Supply Voltage
Figure 33. Over-Current Threshold vs
Ambient Temperature
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03.Feb.2014 Rev.001
Datasheet
BD226xG-M Series
Typical Performance Curves - continued
(BD2264G-M, BD2265G-M)
5.0
5.0
Ta=25°C
VIN=5.0V
4.0
Rise Time: TON1[ms]
Rise Time: TON1[ms]
4.0
3.0
2.0
3.0
2.0
1.0
1.0
0.0
0.0
2
3
4
5
-50
6
Supply Voltage: VIN [V]
50
100
Ambient Temperature: Ta [°C]
Figure 35. Output Rise Time vs
Ambient Temperature
Figure 34. Output Rise Time vs
Supply Voltage
5.0
5.0
Ta=25°C
VIN=5.0V
4.0
Turn On Time: TON2[ms]
Turn On Time: TON2[ms]
0
3.0
2.0
1.0
4.0
3.0
2.0
1.0
0.0
0.0
2
3
4
5
6
-50
Figure 36. Output Turn-On Time vs
Supply Voltage
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TSZ22111・15・001
0
50
100
Ambient Temperature: Ta [°C]
Supply Voltage: VIN [V]
Figure 37. Output Turn-On Time vs
Ambient Temperature
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Datasheet
BD226xG-M Series
Typical Performance Curves - continued
(BD2264G-M, BD2265G-M)
5.0
5.0
VIN=5.0V
4.0
Fall Time: TOFF1[µs]
Fall Time: TOFF1[µs]
Ta=25°C
3.0
2.0
1.0
4.0
3.0
2.0
1.0
0.0
0.0
2
3
4
5
Supply Voltage: VIN [V]
6
-50
Figure 38. Output Fall Time vs
Supply Voltage
100
Figure 39. Output Fall Time vs
Ambient Temperature
6.0
6.0
Ta=25°C
VIN=5.0V
5.0
Turn Off Time: TOFF2[µs]
Turn Off Time: TOFF2[µs]
0
50
Ambient Temperature: Ta [°C]
4.0
3.0
2.0
5.0
4.0
3.0
2.0
1.0
1.0
0.0
0.0
2
3
4
5
6
-50
Supply Voltage: VIN [V]
50
100
Ambient Temperature: Ta [°C]
Figure 40. Output Turn-Off Time vs
Supply Voltage
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TSZ22111・15・001
0
Figure 41. Output Turn-Off Time vs
Ambient Temperature
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Datasheet
BD226xG-M Series
Typical Performance Curves - continued
(BD2266G-M, BD2267G-M)
140
140
Ta=25°C
VIN=5.0V
120
Operating Current : IDD[µA]
Operating Current : IDD[µA]
120
100
80
60
40
100
80
60
40
20
20
0
0
2
3
4
5
6
-50
0
100
Ambient Temperature: Ta [°C]
Supply Voltage : VIN[V]
Figure 42. Operating Current vs Supply Voltage
(EN, /EN Enable)
Figure 43. Operating Current vs Ambient Temperature
(EN, /EN Enable)
1.3
1.3
Ta=25°C
VIN=5.0V
1.2
Over Current Threshold: ITH[A]
Over Current Threshold: ITH[A]
50
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
2
3
4
5
6
-50
Supply Voltage: VIN [V]
Figure 44. Over-current threshold vs
Supply Voltage
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50
100
Ambient Temperature: Ta [°C]
Figure 45. Over-current threshold vs
Ambient Temperature
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Datasheet
BD226xG-M Series
Typical Performance Curves - continued
(BD2266G-M, BD2267G-M)
5.0
5.0
VIN=5.0V
4.0
Rise Time: TON1[ms]
Rise Time: TON1[ms]
Ta=25°C
3.0
2.0
4.0
3.0
2.0
1.0
1.0
0.0
0.0
2
3
4
5
-50
6
Supply Voltage: VIN [V]
50
100
Ambient Temperature: Ta [°C]
Figure 47. Output rise time vs Ambient Temperature
Figure 46. Output rise time vs Supply Voltage
5.0
5.0
Ta=25°C
VIN=5.0V
4.0
Turn On Time: TON2[ms]
Turn On Time: TON2[ms]
0
3.0
2.0
1.0
4.0
3.0
2.0
1.0
0.0
0.0
2
3
4
5
6
-50
Supply Voltage: VIN [V]
Figure 48. Output turn-on time vs
Supply Voltage
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50
100
Ambient Temperature: Ta [°C]
Figure 49. Output turn-on time vs
Ambient Temperature
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Datasheet
BD226xG-M Series
Typical Performance Curves - continued
(BD2266G-M, BD2267G-M)
5.0
5.0
VIN=5.0V
Ta=25°C
4.0
Fall Time: TOFF1[µs]
Fall Time: TOFF1[µs]
4.0
3.0
2.0
1.0
3.0
2.0
1.0
0.0
0.0
2
3
4
5
6
-50
Supply Voltage: VIN [V]
Figure 50. Output fall time vs Supply Voltage
50
100
Figure 51. Output fall time vs Ambient Temperature
6.0
6.0
Ta=25°C
VIN=5.0V
5.0
Turn Off Time: TOFF2[µs]
5.0
Turn Off Time: TOFF2[µs]
0
Ambient Temperature: Ta [°C]
4.0
3.0
2.0
4.0
3.0
2.0
1.0
1.0
0.0
0.0
2
3
4
5
6
-50
Supply Voltage: VIN [V]
Figure 52. Output turn-off time vs
Supply Voltage
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50
100
Ambient Temperature: Ta [°C]
Figure 53. Output turn-off time vs
Ambient Temperature
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Datasheet
BD226xG-M Series
Typical Wave Forms
(BD2262G-M)
VEN
(5V/div.)
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
VIN=5V
IOUT
(10mA/div.)
IOUT
(10mA/div.)
VIN=5V
RL=500Ω
RL=500Ω
TIME (1ms/div.)
Figure 54. Output Rise Characteristic
TIME (1us/div.)
Figure 55. Output Fall Characteristic
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
CL=100uF
CL=47uF
IOUT
(100mA/div.)
IOUT
(0.2A/div.)
VIN=5V
CL=22uF
TIME (1ms/div.)
Figure 56. Inrush Current Response
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RL=50Ω
TIME (5ms/div.)
Figure 57. Over-Current Response
Ramped Load
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Datasheet
BD226xG-M Series
Typical Wave Forms – continued
(BD2262G-M)
VEN
(5V/div.)
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.2A/div.)
IOUT
(0.2A/div.)
VIN=5V
VIN=5V
TIME (5ms/div.)
Figure 58. Over-Current Response
Enable to Shortcircuit
TIME (500ms/div.)
Figure 59. Over-Current Response
Enable to Shortcircuit
VOUT
(5V/div.)
VIN
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VIN=5V
IOUT
(1A/div.)
RL=500Ω
IOUT
(10mA/div.)
TIME (5ms/div.)
Figure 61. UVLO Response
Increasing VIN
TIME (5ms/div.)
Figure 60. Over-Current Response
1Ω Load to Enabled Device
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Datasheet
BD226xG-M Series
Typical Wave Forms – continued
(BD2262G-M)
VIN
(5V/div.)
VOUT
(5V/div.)
RL=500Ω
IOUT
(10mA/div.)
TIME (10ms/div.)
Figure 62. UVLO Response
Decreasing VIN
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Datasheet
BD226xG-M Series
Typical Wave Forms – continued
(BD2264G-M)
VEN
(5V/div.)
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
VIN=5V
RL=20Ω
VIN=5V
RL=20Ω
IOUT
(0.5A/div.)
IOUT
(0.5A/div.)
TIME(1ms/div.)
TIME(1µs/div.)
Figure 63. Output Rise Characteristic
Figure 64. Output Fall Characteristic
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
CL=220µF
CL=100µF
IOUT
(0.2A/div.)
IOUT
(0.5A/div.)
VIN=5V
CL=47µF
RL=20Ω
VIN=5V
TIME (1ms/div.)
TIME (5ms/div.)
Figure 65. Inrush Current Response
Figure 66. Over-Current Response Ramped Load
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Datasheet
BD226xG-M Series
Typical Wave Forms – continued
(BD2264G-M)
VEN
(5V/div.)
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.5A/div.)
IOUT
(0.5A/div.)
VIN=5V
VIN=5V
VIN=5V
TIME (5ms/div.)
TIME (100ms/div.)
Figure 67. Over-Current Response
Enable to Short Circuit
Figure 68. Over-Current Response
Enable to Short Circuit
VOUT
(5V/div.)
VIN
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VIN=5V
IOUT
(0.2A/div.)
IOUT
(1A/div.)
RL=20Ω
TIME (5ms/div.)
TIME (10ms/div.)
Figure 69. Over-Current Response
1Ω Load Connected at EN
Figure 70. UVLO Response when
Increasing VIN
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Datasheet
BD226xG-M Series
Typical Wave Forms – continued
(BD2264G-M)
VIN
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.2A/div.)
RL=20Ω
TIME (10ms/div.)
Figure 71. UVLO Response when
Decreasing VIN
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Datasheet
BD226xG-M Series
Typical Wave Forms – continued
(BD2266G-M)
VEN
(5V/div.)
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
VIN=5V
RL=20Ω
IOUT
(0.5A/div.)
IOUT
(0.5A/div.)
VIN=5V
RL=20Ω
TIME(1us/div.)
Figure 73. Output fall characteristic
TIME(1ms/div.)
Figure 72. Output rise characteristic
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
CL=220uF
CL=100uF
IOUT
(0.5A/div.)
IOUT
VIN=5V
(0.2A/div.)
CL=47uF
RL=20Ω
VIN=5V
TIME (5ms/div.)
Figure 75. Over-current response
ramped load
TIME (1ms/div.)
Figure 74. Inrush current response
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Datasheet
BD226xG-M Series
Typical Wave Forms – continued
(BD2266G-M)
VEN
(5V/div.)
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.5A/div.)
IOUT
(0.5A/div.)
VIN=5V
VIN=5V
TIME (5ms/div.)
Figure 76. Over-current response
enable to shortcircuit
TIME (100ms/div.)
Figure 77. Over-current response
enable to shortcircuit
VOUT
(5V/div.)
VIN
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VIN=5V
IOUT
(0.2A/div.)
IOUT
(1A/div.)
TIME (10ms/div.)
Figure 79. UVLO response
increasing VIN
TIME (5ms/div.)
Figure 78. Over-current response
1Ω load to enabled device
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Datasheet
BD226xG-M Series
Typical Wave Forms – continued
(BD2266G-M)
VIN
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.2A/div.)
RL=20Ω
TIME (10ms/div.)
Figure 80. UVLO response
decreasing VIN
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Datasheet
BD226xG-M Series
Typical Application Circuit
5V (Typ)
10kΩ to
100kΩ
CIN
IN
OUT
+
GND
Controller
CL
-
EN(/EN)
/OC
Application Information
When excessive current flows due to output short-circuit or so, ringing occurs by inductance of power source line and IC.
This may cause bad effects on IC operations. In order to avoid this case, a bypass capacitor (CIN) should be connected
across the IN terminal and GND terminal of IC. A 1µF or higher value is recommended. Moreover, in order to decrease
voltage fluctuations of power source line and IC, connect a low ESR capacitor in parallel with CIN. A 10µF to 100µF or higher
is effective.
Pull up /OC output by resistance 10kΩ to 100kΩ.
Set up values for CL which satisfies the application.
This application circuit does not guarantee its operation.
When using the circuit with changes to the external circuit constants, make sure to leave an adequate margin for external
components including AC/DC characteristics as well as dispersion of the IC.
Functional Description
1. Switch Operation
IN terminal and OUT terminal are connected to the drain and the source of switch MOSFET respectively. The IN terminal
is also used as power source input to internal control circuit.
When the switch is turned ON from EN(/EN) control input, the IN and OUT terminals are connected by a 120mΩ (Typ)
switch. In ON status, the switch is bidirectional. Therefore, when the potential of OUT terminal is higher than that of IN
terminal, current flows from OUT to IN terminal. On the other hand, when the switch is turned off, it is possible to prevent
current from flowing reversely from OUT to IN terminal since a parasitic diode between the drain and the source of switch
MOSFET is not present.
2. Thermal Shutdown Circuit (TSD)
If over-current would continue, the temperature of the IC would increase drastically. If the junction temperature goes
beyond 135°C (Typ) in the condition of over-current detection, thermal shutdown circuit operates and turns power switch
off, causing the IC to output a fault flag (/OC). Then, when the junction temperature decreases lower than 115°C (Typ),
the power switch is turned on and fault flag (/OC) is cancelled. This operation repeats, unless the increase of chip’s
temperature is removed or the output of power switch is turned OFF.
The thermal shutdown circuit operates when the switch is ON (EN(/EN) signal is active).
3. Over-Current Detection (OCD)
The over-current detection circuit limits current (ISC) and outputs fault flag (/OC) when current flowing in each switch
MOSFET exceeds a specified value. The over-current detection circuit works when the switch is on (EN(/EN) signal is
active). There are three types of response against over-current:
(1) When the switch is turned on while the output is in short circuit status, the switch goes into current limit status
immediately.
(2) When the output short-circuits or high capacity load is connected while the switch is on, very large current
flows until the over-current limit circuit reacts. When the current detection and limit circuit operates, current
limitation is carried out.
(3) When the output current increases gradually, current limitation would not operate unless the output current
exceeds the over-current detection value. When it exceeds the detection value, current limitation is carried
out.
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Datasheet
BD226xG-M Series
4. Under-Voltage Lockout (UVLO)
UVLO circuit prevents the switch from turning on until the VIN exceeds 2.3V(Typ). If VIN drops below 2.2V(Typ) while the
switch is still ON, then UVLO shuts off the power switch. UVLO has a hysteresis of 100mV(Typ).
Under-voltage lockout circuit operates when the switch is on (EN(/EN) signal is active).
5. Fault Flag (/OC) Output
Fault flag output is N-MOS open drain output. During detection of over-current and/or thermal shutdown, the output level
will turn low.
Over-current detection has delay filter. This delay filter prevents current detection flags from being sent during
instantaneous events such as inrush current at switch on or during hot plug. If fault flag output is unused, /OC pin should
be connected to open or ground line.
Over Current
Load Removed
Over Current
Detection
VOUT
ITH
ISC
IOUT
t/OC
V/OC
Figure 81. Over-Current Detection
VEN
VOUT
Output Short Circuit
Thermal Shutdown
IOUT
V/OC
/OC Delay Time
Figure 82. Over-Current Detection, Thermal Shutdown Timing (BD2262G-M, BD2264G-M, BD2266G-M)
V/EN
VOUT
Output Short Circuit
Thermal Shutdown
IOUT
V/OC
/OC Delay Time
Figure 83. Over-Current Detection, Thermal Shutdown Timing (BD2265G-M, BD2267G-M )
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Datasheet
BD226xG-M Series
Power Dissipation
(SSOP5 Package)
700
Power Dissipation : Pd[mW]
POWER DISSIPATION : Pd [mW]
600
500
400
300
200
100
0
0
50
75 85
100
AMBIENT TEMPERATURE : Ta [℃ ]
25
125
150
Ambient Temperature : Ta[°C]
70mm x 70mm x 1.6mm Glass Epoxy Board
Figure 84. Power Dissipation Curve (Pd-Ta Curve)
I/O Equivalence Circuit
Symbol
Pin No.
EN
(/EN)
3
OUT
5
Equivalence Circuit
EN
(/EN)
VOUT
OUT
/OC
/OC
4
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Datasheet
BD226xG-M Series
Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum
rating, increase the board size and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.
7.
In rush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
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Datasheet
BD226xG-M Series
Operational Notes - continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
P
+
N
P
+
N
N
P
N
Pin B
B
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
GND
Parasitic
Elements
GND
Parasitic
Elements
GND
N Region
close-by
Figure 85. Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
15. Thermal design
Perform thermal design in which there are adequate margins by taking into account the power dissipation (Pd) in actual states of
use.
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Datasheet
BD226xG-M Series
Ordering Information
B
D
2
2
6
x
Part Number
BD2262G
BD2264G
BD2265G
BD2266G
BD2267G
G
-
MGTR
Package
G: SSOP5
Product Rank
M: for Automotive
Packaging and forming specification
G: Halogen free
TR: Embossed tape and reel
Marking Diagram
SSOP5 (TOP VIEW)
Part Number Marking
LOT Number
Part Number
Part Number Marking
BD2262G-M
Z0
BD2264G-M
Z1
BD2265G-M
Z2
BD2266G-M
Z3
BD2267G-M
Z4
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Datasheet
BD226xG-M Series
Physical Dimension, Tape and Reel Information
Package Name
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Datasheet
BD226xG-M Series
Revision History
Date
03.Feb.2014
Revision
001
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Datasheet
Notice
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - SS
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - SS
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
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