Datasheet
1 Channel Compact High Side Switch ICs
1.3A Current Limit High Side Switch ICs
BD2268G-M BD2269G-M
General Description
Key Specifications
BD2268G-M and BD2269G-M are low ON-Resistance
N-Channel MOSFET high-side power switches,
optimized for Universal Serial Bus (USB) applications.
BD2268G-M and BD2269G-M are equipped with the
function of over-current detection, thermal shutdown,
under-voltage lockout and soft-start.
Input Voltage Range:
2.7V to 5.5V
ON-Resistance:
110mΩ(Typ)
Over-Current Threshold: 1.15A (Min), 1.4A (Max)
Standby Current:
0.01µA (Typ)
Operating Temperature Range:
-40°C to +85°C
Package
W (Typ)
D (Typ)
H (Max)
Features
AEC-Q100 Qualified
Over Current Protection
Built-in Low ON-Resistance (Typ 110mΩ)
N-Channel MOSFET
Thermal Shutdown
Open-Drain Fault Flag Output
Under-Voltage Lockout
Output Discharge Function
Soft-Start Circuit
Control Input Logic
Active-High:
BD2268G-M
Active-Low:
BD2269G-M
■
■
■
■
■
■
■
■
■
SSOP5
2.90mm x 2.80mm x 1.25mm
Applications
Car accessory, Industrial applications
Typical Application Circuit
5V (Typ)
3.3V
CIN
IN
OUT
+
GND
10kΩ to
100kΩ
CL
-
EN
/OC
Lineup
Over-Current Detection
Min
Typ
Max
Control Input
Logic
1150mA
1275mA
1400mA
High
SSOP5
Reel of 3000
BD2268G-MGTR
1150mA
1275mA
1400mA
Low
SSOP5
Reel of 3000
BD2269G-MGTR
○Product structure:Silicon monolithic integrated circuit
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
Package
Orderable Part Number
○This product has not designed protection against radioactive rays
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24.Feb.2014 Rev.001
Datasheet
BD2268G-M BD2269G-M
Block Diagram
IN
OUT
/EN
Under-Voltage
Lockout
Charge
Pump
EN(/EN)
Over-Current
Protection
Thermal
Shutdown
/OC
Delay
Counter
GND
Pin Configurations
BD2268G-M
TOP VIEW
1 IN
BD2269G-M
TOP VIEW
OUT 5
1 IN
2 GND
3 EN
OUT 5
2 GND
/OC 4
3 /EN
/OC 4
Pin Description
Pin No.
Symbol
I/O
1
IN
-
Switch input and the supply voltage for the IC
2
GND
-
Ground
3
EN, /EN
I
Enable input
EN: High level input turns on the switch. (BD2268G-M)
/EN: Low level input turns on the switch. (BD2269G-M)
4
/OC
O
Over-current detection terminal.
Low level output during over-current or over-temperature condition
Open-drain fault flag output
5
OUT
O
Switch output
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TSZ22111・15・001
Function
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TSZ02201-0R5R0H300120-1-2
24.Feb.2014 Rev.001
Datasheet
BD2268G-M BD2269G-M
Absolute Maximum Ratings (Ta=25°C)
Parameter
IN Supply Voltage
EN(/EN) Input Voltage
/OC Voltage
/OC Sink Current
Symbol
Rating
Unit
VIN
-0.3 to +6.0
V
VEN, V/EN
-0.3 to +6.0
V
V/OC
-0.3 to +6.0
V
I/OC
5
mA
OUT Voltage
VOUT
-0.3 to VIN + 0.3
V
Storage Temperature
Tstg
-55 to +150
°C
Power Dissipation
Pd
0.67
(Note 1)
W
(Note 1) Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 5.4mW per 1°C above 25°C
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated
over the absolute maximum ratings.
Recommended Operating Conditions
Parameter
IN Operating Voltage
Operating Temperature
Symbol
Rating
Unit
Min
Typ
Max
VIN
2.7
5.0
5.5
V
Topr
-40
-
+85
°C
Electrical Characteristics
BD2268G-M
(VIN= 5V, Ta= 25°C, unless otherwise specified.)
DC Characteristics
Limit
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Operating Current
IDD
-
110
160
µA
Standby Current
ISTB
-
0.01
5
µA
VENH
2.0
-
-
V
VEN = 5V
VOUT = open
VEN = 0V
VOUT = open
High Input
VENL
-
-
0.8
V
Low Input
EN Input Leakage
IEN
-1
+0.01
+1
µA
VEN= 0V or 5V
ON-Resistance
RON
-
110
155
mΩ
IOUT= 500mA
Over-Current Threshold
ITH
1150
1275
1400
mA
Short Circuit Output Current
ISC
500
-
-
mA
RDISC
30
60
120
Ω
EN Input Voltage
Output Discharge Resistance
/OC Output Low Voltage
UVLO Threshold
VOUT= 0V, RMS
IDISC= 1mA
V/OC
-
-
0.4
V
I/OC= 0.5mA
VTUVH
2.1
2.3
2.5
V
VIN Increasing
VTUVL
2.0
2.2
2.4
V
VIN Decreasing
AC Characteristics
Parameter
Symbol
Limit
Unit
Conditions
Min
Typ
Max
tON1
-
1
6
ms
RL= 100Ω
Output Turn ON Time
tON2
-
1.5
10
ms
RL= 100Ω
Output Fall Time
tOFF1
-
1
20
µs
RL= 100Ω
Output Turn OFF Time
tOFF2
-
3
40
µs
RL= 100Ω
/OC Delay Time
t/OC
10
15
20
ms
Output Rise Time
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TSZ22111・15・001
3/23
TSZ02201-0R5R0H300120-1-2
24.Feb.2014 Rev.001
Datasheet
BD2268G-M BD2269G-M
Electrical Characteristics - continued
BD2269G-M
(VIN= 5V, Ta= 25°C, unless otherwise specified.)
DC Characteristics
Limit
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Operating Current
IDD
-
110
160
µA
Standby Current
ISTB
-
0.01
5
µA
V/ENH
2.0
-
-
V
V/EN = 0V
VOUT = open
V/EN = 5V
VOUT = open
High Input
V/ENL
-
-
0.8
V
Low Input
/EN Input Leakage
I/EN
-1
+0.01
+1
µA
V/EN = 0V or 5V
ON-Resistance
RON
-
110
155
mΩ
IOUT= 500mA
Over-Current Threshold
ITH
1150
1275
1400
mA
/EN Input Voltage
Short Circuit Output Current
ISC
500
-
-
mA
Output Discharge Resistance
RDISC
30
60
120
Ω
IDISC= 1mA
/OC Output Low Voltage
V/OC
-
-
0.4
V
I/OC= 0.5mA
UVLO Threshold
VOUT= 0V, RMS
VTUVH
2.1
2.3
2.5
V
VIN Increasing
VTUVL
2.0
2.2
2.4
V
VIN Decreasing
AC Characteristics
Parameter
Symbol
Limit
Min
Typ
Max
Unit
Conditions
Output Rise Time
tON1
-
1
6
ms
RL= 100Ω
Output Turn ON Time
tON2
-
1.5
10
ms
RL= 100Ω
Output Fall Time
tOFF1
-
1
20
µs
RL= 100Ω
Output Turn OFF Time
tOFF2
-
3
40
µs
RL= 100Ω
/OC Delay Time
t/OC
10
15
20
ms
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TSZ22111・15・001
4/23
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24.Feb.2014 Rev.001
Datasheet
BD2268G-M BD2269G-M
Measurement Circuit
VIN
VIN
A
A
IN
VIN
OUT
VOUT
IN
VIN
1µF
GND
VEN(/EN)
RL
GND
VEN(/EN)
/OC
EN(/EN)
A.
OUT
VOUT
1µF
Operating Current
B.
/OC
EN(/EN)
EN, /EN Input Voltage, Output Rise / Fall Time
VIN
VIN
10kΩ
A
A
IOC
OUT
VOUT
VIN
IN
IN
VIN
1µF
1µF
IOUT
GND
VEN(/EN)
C.
OUT
VOUT
GND
VEN(/EN)
/OC
EN(/EN)
ON-Resistance, Over-Current Detection
D.
/OC
EN(/EN)
/OC Output Low Voltage
Figure 1. Measurement Circuit
Timing Diagram
VEN
VENL
VENH
tON2
tOFF2
90%
VOUT
V/EN
tON2
90%
10%
tOFF1
90%
10%
10%
tON1
tOFF1
Figure 3. Output Rise / Fall Time
(BD2269G-M)
Figure 2. Output Rise / Fall Time
(BD2268G-M)
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TSZ22111・15・001
tOFF2
90%
VOUT
10%
tON1
V/ENH
V/ENL
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24.Feb.2014 Rev.001
Datasheet
BD2268G-M BD2269G-M
Typical Performance Curves
140
Ta=25°C
OperatingCURRENT
Current: IDD: [µA]
OPERATING
I DD [µA]
Operating Current: I [µA]
OPERATING CURRENTDD: I DD [µA]
140
120
100
80
60
40
20
0
VIN=5.0V
120
100
80
60
40
20
0
2
3
4
5
SUPPLY
VOLTAGE
IN [V]
Supply Voltage:
VIN: V
[V]
6
-50
Figure 4. Operating Current vs Supply Voltage
(EN, /EN Enable)
Figure 5. Operating Current vs Ambient Temperature
(EN, /EN Enable)
1.0
1.0
Standby Current: I
[µA]
STANDBY CURRENTSTB
: I STB [µA]
Ta=25°C
StandbyCURRENT
Current: ISTB: ISTB
[µA]
STANDBY
[µA]
0
50
100
AmbientTEMPERATURE
Temperature: Ta [°C]
AMBIENT
: Ta[℃]
0.8
0.6
0.4
0.2
VIN=5.0V
0.8
0.6
0.4
0.2
0.0
0.0
2
3
4
5
SUPPLY
VIN [V]
Supply VOLTAGE
Voltage: VIN: [V]
6
-50
Figure 6. Standby Current vs Supply Voltage
(EN, /EN Disable)
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TSZ22111・15・001
0
50
AMBIENT
: Ta[℃]
AmbientTEMPERATURE
Temperature: Ta [°C]
100
Figure 7. Standby Current vs Ambient Temperature
(EN, /EN Disable)
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24.Feb.2014 Rev.001
Datasheet
BD2268G-M BD2269G-M
Typical Performance Curves - continued
2.0
Ta=25°C
1.5
Enable Input Voltage: VEN, V/ENEN[V]
ENABLE INPUT VOLTAGE
: V [V]
Enable Input Voltage: VEN, V/EN[V]
ENABLE INPUT VOLTAGE : V EN [V]
2.0
Low to High
High to Low
1.0
0.5
0.0
VIN=5.0V
Low to High
1.5
High to Low
1.0
0.5
0.0
2
3
4
5
SUPPLY
VOLTAGE
:
V
IN [V]
Supply Voltage: VIN [V]
6
-50
50
100
AMBIENT
: Ta[℃]
AmbientTEMPERATURE
Temperature: Ta [°C]
Figure 8. EN, /EN Input Voltage vs
Supply Voltage
(VENH, VENL, V/ENH, V/ENL)
Figure 9. EN, /EN Input Voltage vs
Ambient Temperature
(VENH, VENL, V/ENH, V/ENL)
200
2 00
Ta=25°C
VIN=5.0V
ON-Resistance: RON [mΩ]
ON-Resistance: RON [mΩ]
0
150
100
50
150
100
50
0
0
2
3
4
5
SUPPLY
VOLTA
GEV:INV[V]
I N[ V ]
Supply
Voltage:
-50
6
Figure 10. ON-Resistance vs Supply Voltage
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TSZ22111・15・001
0
50
10 0
A M BAmbient
IENT TEM
PERA TURE
Ta[ ℃ ]
Temperature:
Ta :[°C]
Figure 11. ON-Resistance vs Ambient Temperature
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24.Feb.2014 Rev.001
Datasheet
BD2268G-M BD2269G-M
Typical Performance Curves - continued
1.5
Over-Current Threshold: ITH[A]
OVER CURRENT THRESHOLD:I TH [A]
Over-Current Threshold: ITH[A]
OVER CURRENT THRESHOLD:I TH [A]
1.5
Ta=25°C
1.4
1.3
1.2
1.1
1.0
0.9
2
3
4
5
Supply Voltage:
VIN: V
[V]
SUPPLY
VOLTAGE
IN [V]
VIN=5.0V
1.4
1.3
1.2
1.1
1.0
0.9
-50
6
Figure 12. Over-Current Threshold vs
Supply Voltage
100
Ta=25°C
/OC Output Low Voltage: V/OC [mV]
/OC Output Low Voltage: V/OC [mV]
100
Figure 13. Over-Current Threshold vs
Ambient Temperature
100
/O
C
0
50
AMBIENT
TEMPERATURE
: Ta[℃]
Ambient Temperature: Ta [°C]
80
60
40
20
0
VIN=5.0V
80
60
40
20
0
2
3
4
5
SUPPLY
: V[V]
Supply VOLTAGE
Voltage: VIN
IN[V]
6
-50
Figure 14. /OC Output Low Voltage vs
Supply Voltage
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TSZ22111・15・001
0
50
AMBIENT
Ta[ ℃ ]
AmbientTEMPERATURE
Temperature: Ta: [°C]
100
Figure 15. /OC Output Low Voltage vs
Ambient Temperature
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24.Feb.2014 Rev.001
Datasheet
BD2268G-M BD2269G-M
Typical Performance Curves - continued
1.0
UVLO Hysteresis Voltage: VHYSHSY
[V]
UVLO HYSTERESIS VOLTAGE:V
[V]
UVLO Threshold: VTUVH,
VTUVL [V]
TUVH , VTUVL [V]
UVLO THRESHOLD : V
2.5
2.4
2.3
VTUVH
2.2
VTUVL
2.1
2.0
0.8
0.6
0.4
0.2
0.0
-50
0
50
100
-50
AMBIENT
Ta[℃]
AmbientTEMPERATURE
Temperature: Ta:[°C]
Figure 16. UVLO Threshold Voltage vs
Ambient Temperature
Figure 17. UVLO Hysteresis Voltage vs
Ambient Temperature
5.0
5.0
Ta=25°C
VIN=5.0V
4.0
Output
[ms]
RISERise
TIMETime:
: TON1tON1
[ms]
Output
Time:
[ms]
RISERise
TIME
: TON1tON1
[ms]
0
50
100
AMBIENT
TEMPERATURE
:
Ta[
]
℃
Ambient Temperature: Ta [°C]
3.0
2.0
1.0
0.0
4.0
3.0
2.0
1.0
0.0
2
3
4
5
SUPPLY
: V[V]
IN [V]
SupplyVOLTAGE
Voltage: VIN
6
-50
Figure 18. Output Rise Time vs
Supply Voltage
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TSZ22111・15・001
0
50
AMBIENT
TEMPERATURE
Ta[℃ ]
Ambient
Temperature: Ta :[°C]
100
Figure 19. Output Rise Time vs
Ambient Temperature
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24.Feb.2014 Rev.001
Datasheet
BD2268G-M BD2269G-M
Typical Performance Curves - continued
5.0
5.0
VIN=5.0V
Output
ON Time:
tON2[ms]
[ms]
TURNTurn
ON TIME
: T ON2
Output
Time:
tON2[ms]
[ms]
TURNTurn
ON ON
TIME
: T ON2
Ta=25°C
4.0
3.0
2.0
1.0
0.0
4.0
3.0
2.0
1.0
0.0
2
3
4
5
SUPPLY
: V[V]
IN [V]
SupplyVOLTAGE
Voltage: VIN
6
-50
50
100
AMBIENT
Ta[℃]
AmbientTEMPERATURE
Temperature: Ta :[°C]
Figure 20. Output Turn ON Time vs
Supply Voltage
Figure 21. Output Turn ON Time vs
Ambient Temperature
5.0
5.0
VIN=5.0V
Ta=25°C
4.0
Output
Time:
tOFF1
FALL Fall
TIME
: T OFF1
[µ[µs]
s]
Output
Time:
tOFF1
[µs]
FALLFall
TIME
: TOFF1
[µs]
0
3.0
2.0
1.0
0.0
4.0
3.0
2.0
1.0
0.0
2
3
4
5
SUPPLY
VOLTAGE
:
V
IN
Supply Voltage: VIN [V][V]
6
-50
50
100
AMBIENT
TEMPERATURE
Ta[℃ ]
Ambient
Temperature: Ta :[°C]
Figure 22. Output Fall Time vs
Supply Voltage
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TSZ22111・15・001
0
Figure 23. Output Fall Time vs
Ambient Temperature
10/23
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24.Feb.2014 Rev.001
Datasheet
BD2268G-M BD2269G-M
Typical Performance Curves - continued
6.0
6.0
VIN=5.0V
Output
tOFF2
[µs]
TURN Turn
OFF OFF
TIMETime:
: T OFF2
[µs]
OutputOFF
TurnTIME
OFF Time:
tOFF2
[µs]
TURN
: T OFF2
[µs]
Ta=25°C
5.0
4.0
3.0
2.0
1.0
0.0
5.0
4.0
3.0
2.0
1.0
0.0
2
3
4
5
SUPPLY
IN [V]
Supply VOLTAGE
Voltage: VIN: V[V]
-50
6
Figure 24. Output Turn OFF Time
vs Supply Voltage
Figure 25. Output Turn OFF Time
vs Ambient Temperature
20
20
VIN=5.0V
Ta=25°C
18
/OC
DelayTIME
Time:: tT/OC
/OC[ms]
/OC
DDLAY
[ms]
/OC[ms]
/OC
/OC
DDLAY
DelayTIME
Time:: tT/OC
[ms]
0
50
100
AmbientTEMPERATURE
Temperature: Ta [°C]
AMBIENT
: Ta[℃]
16
14
12
10
18
16
14
12
10
2
3
4
5
Supply Voltage:
VIN: [V]
SUPPLY
VOLTAGE
VIN [V]
6
-50
100
Figure 27. /OC Delay Time vs
Ambient Temperature
Figure 26. /OC Delay Time vs
Supply Voltage
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TSZ22111・15・001
0
50
AmbientTEMPERATURE
Temperature: Ta [°C]
AMBIENT
: Ta[℃ ]
11/23
TSZ02201-0R5R0H300120-1-2
24.Feb.2014 Rev.001
Datasheet
BD2268G-M BD2269G-M
Typical Performance Curves - continued
200
Output
Discharge
Resistance:
RDISC
DISC ON
RESISTANCE
: R DISC
[Ω][Ω]
Output
Resistance:
RDISC
DISC Discharge
ON RESISTANCE
: R DISC
[Ω][Ω]
200
Ta=25°C
150
100
50
0
VIN=5.0V
150
100
50
0
2
3
4
5
SUPPLY
: V[V]
IN [V]
Supply VOLTAGE
Voltage: VIN
6
-50
Figure 28. Output Discharge Resistance
vs Supply Voltage
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TSZ22111・15・001
0
50
100
AmbientTEMPERATURE
Temperature: Ta :[°C]
AMBIENT
Ta[℃]
Figure 29. Output Discharge Resistance
vs Ambient Temperature
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24.Feb.2014 Rev.001
Datasheet
BD2268G-M BD2269G-M
Typical Wave Forms
(BD2268G-M)
VEN
(5V/div.)
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
VIN=5V
RL=100Ω
IOUT
(50mA/div.)
VIN=5V
IOUT
(50mA/div.)
RL=100Ω
TIME(1ms/div.)
TIME(1µs/div.)
Figure 30. Output Rise Characteristic
Figure 31. Output Fall Characteristic
V/OC
(5V/div.)
VEN
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
CL=220µF
CL=100µF
VIN=5V
IIN
(0.2A/div.)
IOUT
(0.5A/div.)
RL=100Ω
CL=47µF
VIN=5V
TIME (1ms/div.)
TIME (5ms/div.)
Figure 32. Inrush Current Response
Figure 33. Over-Current Response
Ramped Load
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13/23
TSZ02201-0R5R0H300120-1-2
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Datasheet
BD2268G-M BD2269G-M
Typical Wave Forms - continued
VEN
(5V/div.)
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.5A/div.)
IOUT
(0.5A/div.)
VIN=5V
VIN=5V
TIME (5ms/div.)
TIME (100ms/div.)
Figure 34. Over-Current Response
Enable to Short Circuit
Figure 35. Over-Current Response
Enable to Short Circuit
VOUT
(5V/div.)
VIN
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VIN=5V
IOUT
(50mA/div.)
IOUT
(1A/div.)
RL=100Ω
TIME (5ms/div.)
TIME (10ms/div.)
Figure 36. Over-Current Response
1Ω Load Connected at EN
Figure 37. UVLO Response when
Increasing VIN
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Typical Wave Forms - continued
VIN
(5V/div.)
VOUT
(5V/div.)
IOUT
(50mA/div.)
RL=100Ω
TIME (10ms/div.)
Figure 38. UVLO Response when
Decreasing VIN
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BD2268G-M BD2269G-M
Typical Application Circuit
5V (Typ)
(Typ.)
10kΩ to
100kΩ
CIN
Controller
VIN
IN
VOUT
OUT
+
GND
CL
-
EN(/EN)
/OC
Application Information
When excessive current flows due to output short-circuit or so, ringing occurs by inductance of power source line and IC.
This may cause bad effects on IC operations. In order to avoid this case, a bypass capacitor (CIN) should be connected
across the IN terminal and GND terminal of IC. A 1µF or higher value is recommended. Moreover, in order to decrease
voltage fluctuations of power source line and IC, connect a low ESR capacitor in parallel with CIN. A 10µF to 100µF or higher
is effective.
Pull up /OC output by resistance 10kΩ to 100kΩ.
Set up values for CL which satisfies the application.
This application circuit does not guarantee its operation.
When using the circuit with changes to the external circuit constants, make sure to leave an adequate margin for external
components including AC/DC characteristics as well as dispersion of the IC.
Functional Description
1. Switch Operation
IN terminal and OUT terminal are connected to the drain and the source of switch MOSFET respectively. The IN terminal
is also used as power source input to internal control circuit.
When the switch is turned ON from EN(/EN) control input, the IN and OUT terminals are connected by a 110mΩ (Typ)
switch. In ON status, the switch is bidirectional. Therefore, when the potential of OUT terminal is higher than that of IN
terminal, current flows from OUT to IN terminal.
2. Thermal Shutdown Circuit (TSD)
If over-current would continue, the temperature of the IC would increase drastically. If the junction temperature goes
beyond 135°C (Typ) in the condition of over-current detection, thermal shutdown circuit operates and turns power switch
off, causing the IC to output a fault flag (/OC). Then, when the junction temperature decreases lower than 115°C (Typ),
the power switch is turned on and fault flag (/OC) is cancelled. This operation repeats, unless the increase of chip’s
temperature is removed or the output of power switch is turned OFF.
The thermal shutdown circuit operates when the switch is ON (EN(/EN) signal is active).
3. Over-Current Detection (OCD)
The over-current detection circuit limits current (ISC) and outputs fault flag (/OC) when current flowing in each switch
MOSFET exceeds a specified value. The over-current detection circuit works when the switch is on (EN(/EN) signal is
active). There are three types of response against over-current:
(1) When the switch is turned on while the output is in short circuit status, the switch goes into current limit status
immediately.
(2) When the output short-circuits or high capacity load is connected while the switch is on, very large current
flows until the over-current limit circuit reacts. When the current detection and limit circuit operates, current
limitation is carried out.
(3) When the output current increases gradually, current limitation would not operate unless the output current
exceeds the over-current detection value. When it exceeds the detection value, current limitation is carried
out.
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4. Under-Voltage Lockout (UVLO)
UVLO circuit prevents the switch from turning on until the VIN exceeds 2.3V(Typ). If VIN drops below 2.2V(Typ) while the
switch is still ON, then UVLO shuts off the power switch. UVLO has a hysteresis of 100mV(Typ).
Under-voltage lockout circuit operates when the switch is on (EN(/EN) signal is active).
5. Fault Flag (/OC) Output
Fault flag output is N-MOS open drain output. During detection of over-current and/or thermal shutdown, the output level
will turn low.
Over-current detection has delay filter. This delay filter prevents current detection flags from being sent during
instantaneous events such as inrush current at switch on or during hot plug. If fault flag output is unused, /OC pin should
be connected to open or ground line.
Over Current
Load Removed
Over Current
Detection
VOUT
ITH
ISC
IOUT
t/OC
V/OC
Figure 39. Over-Current Detection
VEN
VOUT
Output Short Circuit
Thermal Shutdown
IOUT
V/OC
/OC Delay Time
Figure 40. Over-Current Detection, Thermal Shutdown Timing (BD2268G-M)
V/EN
VOUT
Output Short Circuit
Thermal Shutdown
IOUT
V/OC
/OC Delay Time
Figure 41. Over-Current Detection, Thermal Shutdown Timing (BD2269G-M)
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Datasheet
BD2268G-M BD2269G-M
Power Dissipation
(SSOP5 package)
700
Power Dissipation : Pd[mW]
POWER DISSIPATION : Pd [mW]
600
500
400
300
200
100
0
0
25
50
75 85
100
AMBIENT TEMPERATURE : Ta [℃ ]
125
150
Ambient Temperature : Ta[°C]
70mm x 70mm x 1.6mm Glass Epoxy Board
Figure 42. Power Dissipation Curve (Pd-Ta Curve)
I/O Equivalence Circuit
Symbol
Pin No.
EN
(/EN)
3
OUT
5
Equivalence Circuit
EN
(/EN)
OUT
VOUT
/OC
/OC
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Datasheet
BD2268G-M BD2269G-M
Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum
rating, increase the board size and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.
7.
In rush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
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Operational Notes - continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
P
+
N
P
+
N
N
P
N
Pin B
B
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
GND
Parasitic
Elements
GND
Parasitic
Elements
GND
N Region
close-by
Figure 43. Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
15. Thermal design
Perform thermal design in which there are adequate margins by taking into account the power dissipation (Pd) in actual states of
use.
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Datasheet
BD2268G-M BD2269G-M
Ordering Information
B
D
2
2
6
8
Part Number
B
D
G
-
Package
G: SSOP5
2
2
6
9
Part Number
G
Package
G: SSOP5
MGTR
Product Rank
M: for Automotive
Packaging and forming specification
G: Halogen free
TR: Embossed tape and reel
-
MGTR
Product Rank
M: for Automotive
Packaging and forming specification
G: Halogen free
TR: Embossed tape and reel
Marking Diagram
SSOP5 (TOP VIEW)
Part Number Marking
LOT Number
Part Number
Part Number Marking
BD2268G-M
QW
BD2269G-M
QX
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Datasheet
BD2268G-M BD2269G-M
Physical Dimension, Tape and Reel Information
Package Name
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BD2268G-M BD2269G-M
Revision History
Date
24.Feb.2014
Revision
001
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Datasheet
Notice
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice – SS
© 2013 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
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Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
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