BD2270HFV-LBTR

Datasheet Controller ICs for High Side NMOSFET BD2270HFV-LB General Description Key Specifications „ „ „ „ „ „ This is the product guarantees long time support in Industrial market. BD2270HFV is an IC with a built-in external N-channel MOSFET driver circuit. This IC has a built-in charge pump circuit for gate drive and output discharge circuit, enabling configuration of a high side load switch for N-channel MOSFET drive without using any external parts. In addition, the control input terminal has a built-in comparator with hysteresis function, facilitating control of the power up sequence. The space saving type of HVSOF5 package is used. Input voltage range: GATE rise time (CGATE=500pF) : GATE output voltage(VCC=5V): Operating current: Standby current: Operating temperature range: Package HVSOF5 2.7V to 5.5V 130μs (Typ.) 13.5V(Typ.) 50μA(Typ.) 5μA (Typ.) -25℃ to +85℃ W(Typ.) D(Typ.) H (Max.) 1.60mm x 1.60mm x 0.60mm Features ■ ■ ■ ■ ■ ■ Long time support a product for Industrial applications. Built-in charge pump Built-in discharge circuit for output charge Soft start circuit Built-in comparator with hysteresis function at control input terminal Possible to drive N-channel power MOSFET HVSOF5 Applications Industrial Equipment, PCs, PC peripheral devices, digital consumer electronics, etc. Typical Application Circuit 3.3V V IN_SWITCH ON/OFF V OUT_SWITCH VCC GATE DISC AEN GND 3.3V Load BD2270HFV Lineup GATE output voltage(VCC=5V) Min. Typ. Max. 10V 13.5V 15V ○Product structure：Silicon monolithic integrated circuit www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･14･001 Package HVSOF5 Reel of 3000 Orderable Part Number BD2270HFV – LBTR ○This product has no designed protection against radioactive rays 1/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Block Diagram GATE VCC Charge Pump (x3) OSC GND DISC Control AEN Pin Configuration TOP VIEW Pin Description PIN No. PIN name I/O 1 VCC - Power input terminal 2 GND - Ground terminal 3 AEN I Control input terminal Turn ON the external MOSFET switch with high level input. High level input > 2.0V, Low level input < 0.8V 4 DISC O Switch output discharge terminal 5 GATE O GATE drive output terminal Used to connect the gate of the external N-channel MOSFET. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 Function 2/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Absolute Maximum Ratings Parameter Symbol Ratings Unit Supply voltage VCC -0.3 to 6.0 V AEN voltage VAEN -0.3 to 6.0 V DISC voltage VDISC -0.3 to 6.0 V GATE voltage VGATE -0.3 to 15.0 V Storage temperature range TSTG -55 to 150 °C Pd 669*1 mW Power dissipation *1 When mounted on a 70 mm×70 mm×1.6 mm glass epoxy PCB, derate by 5.352 mW/°C above Ta=25°C Recommended Operating Conditions Parameter Symbol Ratings Unit Operating voltage range VCC 2.7 to 5.5 V Operating temperature range TOPR -25 to 85 °C Electrical Characteristics (Vcc =3.0V, Ta=25°C unless otherwise specified) Parameter Limits Symbol Min. Typ. Max. Unit Condition Operating current ICC - 50 75 μA VAEN = 2.5V Standby current ISTB - 5 10 μA VAEN = 0V VAENH 1.55 2 2.45 V High level input VAENL 1.35 1.9 2.35 V Low level input IAEN - 3 5 μA VAEN = 3V 10 13.5 15 V VCC=5V 6.6 9.5 9.9 V VCC=3.3V 6 8.5 9 V VCC=3V CGATE=500pF VCC=3Ｖ VGATE > 4V CGATE = 500pF VCC=3V VGATE < 0.5V AEN input voltage AEN input current GATE output voltage VGATE GATE rise time TON - 130 750 μs GATE fall time TOFF - 18 60 μs DISC discharge resistance RDISC - 200 300 Ω VAEN=0V Measurement Circuit VCC GATE AEN C GATE DISC GND ON/OFF BD2270HFV Timing Diagram VAENH TON2 VAEN VAENL TON1 TOFF VCC+2V VGATE www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 VCC+1V 0.5V 3/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Typical Performance Curves 140 140 Ta=25°C VCC=3.0V 120 OPERATING CURRENT : IDD [μA] OPERATING CURRENT : Icc[μA] 120 100 100 80 60 40 80 60 40 20 20 0 -50 0 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Figure 1. Operating Current AEN Enable Figure 2. Operating Current AEN Enable 14 14 VCC=3.0V Ta=25°C 12 OPERATING CURRENT : ISTB[μA] OPERATING CURRENT : ISTB [μA] 12 10 8 6 4 2 10 8 6 4 2 0 0 2 3 4 5 SUPPLY VOLTAGE : VC C [V] -50 6 Figure 3. Standby Current AEN Disable www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Figure 4. Standby Current AEN Disable 4/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Typical Performance Curves - continued 3.0 3.0 VCC=3.0V ENABLE INPUT VOLTAGE : VAEN [V] ENABLE INPUT VOLTAGE : VAEN [V] 0 Ta=25°C 2.5 2.5 Low to High Low to High 2.0 2.0 High to Low High to Low 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0.0 2 3 4 5 SUPPLY VOLTAGE : VCC [V] -50 6 Figure 5. AEN Input Voltage 100 Figure 6. AEN Input Voltage 10.0 10.0 Ta=25°C AEN INPUT CURRENT : I AEN[μA] AEN INPUT CURRENT : IAEN[μA] 0 50 AMBIENT TEMPERATURE : Ta[℃] 8.0 6.0 4.0 2.0 VCC=3.0V 8.0 6.0 4.0 2.0 0.0 0.0 2 3 4 5 SUPPLY VOLTAGE : VC C [V] -50 6 Figure 7. AEN Input Current www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 0 50 100 AMBIENT TEMPERATURE : Ta[℃ ] Figure 8. AEN Input Current 5/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Typical Performance Curves - continued 14 GATE OUTPUT VOLTAGE : V GATE [V] GATE OUTPUT VOLTAGE : VGATE [V] 14 Ta=25°C 12 10 8 6 4 2 0 2 3 4 5 SUPPLY VOLTAGE : VC C [V] VCC=3.0V 12 10 8 6 4 2 0 -50 6 Figure 9. GATE Output Voltage Figure 10. GATE Output Voltage 300 300 VCC=3.0V Ta=25°C DISC [Ω] 250 200 DISC ON RESISTANCE : R DISC ON RESISTANCE : RDISC[Ω] 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 150 100 50 250 200 150 100 50 0 -50 0 2 3 4 5 SUPPLY VOLTEGE : VCC[V] 6 50 100 AM BIENT TEM PERATURE : Ta[℃ ] Figure 12. DISC ON Resistance Figure 11. DISC ON Resistance www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 0 6/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Typical Performance Curves - continued 200 200 VCC=3.0V, CGATE=500pF 160 TURN ON TIME1 : T ON1 [μs] TURN ON TIME1 : T ON1 [μs] Ta=25°C, CGATE=500pF 120 80 40 0 160 120 80 40 0 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6 -50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Figure 13. GATE Rise Time 1 Figure 14. GATE Rise Time 1 350 350 VCC=3.0V, CGATE=500pF Ta=25°C, CGATE=500pF ON2 [μs] 300 250 TURN ON TIME2 : T TURN ON TIME2 : TON2 [μs] 300 200 150 100 50 3 4 5 SUPPLY VOLTAGE : VC C [V] 6 150 100 50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Figure 16. GATE Rise Time 2 Figure 15. GATE Rise Time 2 www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 200 0 -50 0 2 250 7/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Typical Performance Curves - continued 20 20 VCC=3.0V, CGATE=500pF TURN OFF TIME : TOFF[μs] TURN OFF TIME : TOFF[μs] Ta=25°C, CGATE=500pF 16 12 8 4 3 4 5 SUPPLY VOLTAGE : VCC [V] 12 8 4 0 -50 0 2 16 6 Figure 17. GATE Fall Time 50 100 Figure 18. GATE Fall Time 100.0 100.0 VCC=3.0V VCC=5.0V GATE DRIVE CURRENT : IG[μA] GATE DRIVE CURRENT : IG[μA] 0 AMBIENT TEMPERATURE : Ta[℃ ] 10.0 1.0 10.0 1.0 0.1 0.1 0 2 4 6 0 8 4 6 8 GATE VOLTAGE ABOVE SUPPLY : VGATE[V] GATE VOLTAGE ABOVE SUPPLY : VGATE[V] Figure 19. GATE Drive Current www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 2 Figure 20. GATE Drive Current 8/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Typical Wave Forms VAEN (5V/div) VAEN (5V/div) VCC=3.0V CGATE=500pF VCC=3.0V CGATE=500pF VGATE (2V/div) VGATE (2V/div) TIME (1ms/div) TIME (100μs/div) Figure 21. GATE Rise / Fall Characteristics Figure 22. GATE Rise Characteristics VAEN (5V/div) VAEN (5V/div) VCC=3.0V RTF025N03 VCC=3.0V CGATE=500pF VGATE VOUT_SWITCH VGATE (2V/div) (2V/div) TIME (5μs/div) TIME (100μs/div) Figure 23. GATE Fall Characteristics Figure 24. GATE Switch Rise Characteristics www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 9/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Typical Wave Forms - continued VAEN (5V/div) VAEN (5V/div) VCC=3.0V RTF025N03 CL = 100μF VCC=3.0V RTF025N03 VGATE (2V/div) VGATE VOUT_SWITCH VOUT_SWITCH (2V/div) TIME (5μs/div) TIME (20ms/div) Figure 25. GATE Switch Fall Characteristics Figure 26. GATE Switch Fall Characteristics VAEN (5V/div) VAEN (5V/div) VCC=3.0V RSS130N03 VCC=3.0V RSS130N03 VGATE VGATE VOUT_SWITCH VOUT_SWITCH (2V/div) (2V/div) TIME (100μs/div) TIME (10μs/div) Figure 27. GATE Switch Rise Characteristics Figure 28. GATE Switch Fall Characteristics MOSFET : RTF025N03 RSS130N03 3.3V V IN_SWITCH V OUT_SWITCH CL 1uF GATE VCC ON/OFF AEN DISC GND BD2270HFV Figure 29. Switch Rise / Fall Characteristics Measurement Circuit Diagram www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 10/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Application Circuit 1. Configuration of 3.3V load switch 3.3V ON/OFF V IN_SWITCH V OUT_SWITCH VCC GATE DISC AEN GND 3.3V Load BD2270HFV 2. Figure 30. Configuration of 3.3V Load Switch Configuration of 5V load switch 5V 5V Load ON/OFF VCC GATE DISC AEN GND BD2270HFV Figure 31. Configuration of 5V Load Switch A 5V load switch can be configured like the 3.3V load switch. However, if the external N-channel MOSFET has low VGSS, clamp it with Zener diode and the like. 3. Configuration of low-voltage load switch 1.2V 1.2V Load 3.3V VCC GATE DISC AEN GND ON/OFF BD2270HFV Figure 32. Configuration of Low-voltage Load Switch Providing BD2270HFV drive power supply enables configuration of a low-voltage load switch. 4. Soft start configuration 3.3V ON/OFF 3.3V Load VCC GATE DISC AEN GND BD2270HFV Figure 33. Soft Start Configuration Connecting an external capacitor to the GATE terminal of the BD2270HFV makes it possible to lengthen the rise time of the N-channel MOSFET, thus achieving reduction of the inrush current to the large-capacity capacitor mounted on the load side. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 11/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Application Information The system connection diagram shown here gives no guarantee to the operation of the application circuit. When the recommended external circuit components are changed, be sure to consider adequate margins by taking into account external parts and/or IC’s dispersion including not only static characteristics, but also transient characteristics. Functional Description The BD2270HVF is a driver IC that uses an N-channel MOSFET as a high side load switch. This IC incorporates the following functions. 1. GATE drive The gate drive voltage of an N-channel MOSFET is generated by a built-in charge pump in the BD2270HFV. The built-in charge pump in the BD2270HFV generates a voltage three times as high as the power supply voltage at the GATE terminal. In addition, since this IC has a built-in capacitor for the charge pump, it needs no external parts. The charge pump operates when the AEN is set to High. When the AEN is set to Low, the GATE terminal voltage is fixed to the GND level. 2. Output discharge circuit The output discharge circuit is enabled when the AEN is set to Low. When the discharge circuit is activated, the 200Ω (Typ.) MOSFET switch located between the DISC terminal and the GND terminal turns ON. Connecting the DISC terminal and the source side (load side) of the N-channel MOSFET makes it possible to immediately discharge capacitive load. 3. Soft start function When the AEN terminal input voltage reaches the High level, the built-in charge pump in the BD2270HFV charges the gate of the N-channel MOSFET. The turn-on time of the N-channel MOSFET is determined by the GATE capacity. In addition, connecting a capacitor to the GATE terminal makes it possible to lengthen the rise of turn-on time of the N-channel MOSFET, thus achieving reduction of the inrush current to a large capacitive load. 4. Analog control input terminal The AEN input of the BD2270HFV is connected to the built-in hysteresis comparator. Consequently, even analog signals can control the BD2270HFV, thus facilitating the control of the switch ON-OFF sequence. VCC VIN_SWITCH VAEN VGATE VOUT_SWITCH discharge circuit ON OFF ON Figure 34. Operation Timing * To turn ON the power supply (VCC, VIN_SWITCH), set the AEN to Low. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 12/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Power Dissipation (HVSOF5) 800 POWER DISSIPATION : Pd (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta (℃) Mounted on a 70 mm×70 mm×1.6 mm glass epoxy PCB Figure 35. Power dissipation curve (Pd-Ta Curve) I/O Equivalent Circuit Pin name Pin No. AEN 3 DISC 4 GATE 5 www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 Equivalent circuit 13/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Operational Notes (1) Absolute Maximum Ratings Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings (2) Recommended operating conditions These conditions represent a range within which the expected characteristics of the IC can be approximately obtained. The electrical characteristics are guaranteed under the conditions of each parameter. (3) Reverse connection of power supply Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply terminals. (4) Power supply line Design the PCB layout pattern to provide low impedance ground and supply lines. Separate the ground and supply lines of the digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. (5) Ground Voltage The voltage of the ground pin must be the lowest voltage of all pins of the IC at all operating conditions. Ensure that no pins are at a voltage below the ground pin at any time, even during transient condition. (6) Short between pins and mounting errors Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins. (7) Operation under strong electromagnetic field Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction. (8) Testing on application boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. (9) Regarding input pins of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Resistor Transistor (NPN) Pin A Pin B C Pin B B Pin A N P+ N P+ P N E Parasitic element N P+ N Parasitic element C N E P substrate GND B P+ P P substrate GND Parasitic element GND Parasitic GND element Other adjacent elements Example of monolithic IC structure www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 14/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB (10) GND wiring pattern When using both small-signal and large-current GND traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. Also ensure that the GND traces of external components do not cause variations on the GND voltage. The power supply and ground lines must be as short and thick as possible to reduce line impedance. (11) External Capacitor When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others. (12) Thermal consideration Use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (Pd) in actual operating conditions. Consider Pc that does not exceed Pd in actual operating conditions (Pc≥Pd). Package Power dissipation Power dissipation : Pd (W)=(Tjmax－Ta)/θja : Pc (W)=(Vcc－Vo)×Io+Vcc×Ib Tjmax : Maximum junction temperature=150℃, Ta : Peripheral temperature[℃] , θja : Thermal resistance of package-ambience[℃/W], Pd : Package Power dissipation [W], Pc : Power dissipation [W], Vcc : Input Voltage, Vo : Output Voltage, Io : Load, Ib : Bias Current www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 15/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Ordering Information B D 2 2 7 0 Part Number H F V Package HFV: HVSOF5 - LBTR Product class LB for Industrial applications Packaging and forming specification TR: Embossed tape and reel Marking Diagram HVSOF5(TOP VIEW) Part Number Marking AA LOT Number Part Number Part Number Marking BD2270HFV AA www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 16/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Physical Dimension Tape and Reel Information Package Name HVSOF5 Tape Embossed carrier tape Quantity 3000pcs Direction of feed TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand ) 1pin Direction of feed Reel www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 ∗ Order quantity needs to be multiple of the minimum quantity. 17/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet BD2270HFV-LB Revision History Date Revision 13.Mar.2013 001 21.Feb.2014 002 Changes New Release Delete sentence “and log life cycle” in General Description and Futures (page 1). Change “Industrial Applications” to “Industrial Equipment” in Applications (page 1). Applied new style (“title”, “Ordering Information” and “Physical Dimension Tape and Reel Information”). www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 18/18 TSZ02201-0E3E0H300410-1-2 21.Feb.2014 Rev.002 Datasheet Notice Precaution on using ROHM Products 1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual ambient temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice - SS © 2014 ROHM Co., Ltd. All rights reserved. Rev.002 Datasheet Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label QR code printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act, please consult with ROHM representative in case of export. Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable for infringement of any intellectual property rights or other damages arising from use of such information or data.: 2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the information contained in this document. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice - SS © 2014 ROHM Co., Ltd. All rights reserved. Rev.002 Datasheet General Precaution 1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents. ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative. 3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2014 ROHM Co., Ltd. All rights reserved. Rev.001