BD2270HFV

Power Management Switch ICs for PCs and Digital Consumer Products Controller ICs for High Side NMOSFET BD2270HFV No.11029EBT01 ●Description The BD2270HFV is an IC with a single built-in external N-channel MOSFET driver circuit. This IC has a built-in charge pump circuit for gate drive and output discharge circuit, enabling configuration of a high side load switch for N-channel MOSFET drive without using any external parts. In addition, the control input terminal has a built-in comparator with hysteresis function, facilitating control of the power up sequence. The space saving type of HVSOF5 package is used. ●Features 1) Built-in charge pump 2) Built-in discharge circuit for output charge 3) Soft start circuit 4) Built-in comparator with hysteresis function at control input terminal 5) Compact HVSOF5 package 6) Operating current 50μA 7) Standby current 5μA 8) Possible to drive N-channel power MOSFET ●Applications PCs, PC peripheral devices, digital consumer electronics, etc. ●Absolute Maximum Ratings Parameter Supply voltage AEN voltage DISC voltage GATE voltage Storage temperature range Power dissipation Symbol VCC VAEN VDISC VGATE TSTG Pd Ratings -0.3 ~ 6.0 -0.3 ~ 6.0 -0.3 ~ 6.0 -0.3 ~ 15.0 -55 ~ 150 669*1 Unit V V V V °C mW *1 When mounted on a 70 mm70 mm1.6 mm glass epoxy PCB, derated at 5.352 mW/C above Ta25C *2 This IC is not designed to be radiation-proof. ●Operating Conditions Parameter Operating voltage range Operating temperature range Symbol VCC TOPR Ratings 2.7 ~ 5.5 -25 ~ 85 Unit V °C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/12 2011.05 - Rev.B BD2270HFV ●Electrical Characteristics (Vcc =3.0V, Ta=25°C unless otherwise specified) Parameter Operating current Standby current Symbol ICC ISTB Limits Min. Typ. 50 5 Max. 75 10 Unit μA μA Technical Note Condition VAEN = 2.5V VAEN = 0V AEN input voltage AEN input current VAENH VAENL IAEN 1.55 1.35 - 2 1.9 3 2.45 2.35 5 V V μA High level input Low level input VAEN = 3V 10 GATE output voltage VGATE 6.6 6 13.5 9.5 8.5 15 9.9 9 V V V VCC=5V VCC=3.3V VCC=3V CGATE=500pF VCC=3Ｖ VGATE > 4V CGATE = 500pF VCC=3V VGATE < 0.5V VAEN=0V GATE rise time GATE fall time TON TOFF - 130 18 750 60 μs μs DISC discharge resistance RDISC - 200 300 Ω ●Measurement Circuit C GATE DISC GND VCC AEN ON/OFF GATE BD2270HFV Fig.1 Measurement Circuit ●Timing Diagram VAEN VAENH TON2 TON1 VCC+2V VAENL TOFF VGATE VCC+1V 0.5V Fig.2 Timing Diagram www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/12 2011.05 - Rev.B BD2270HFV ●Reference Data 140 OPERATING CURRENT : IDD[μA] 120 100 80 60 40 20 0 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6 Ta=25°C 140 120 OPERATING CURRENT : IDD [μA] 100 80 60 40 20 0 -50 VCC=3.0V Technical Note 14 OPERATING CURRENT : ISTB[μA] 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Ta=25°C 12 10 8 6 4 2 0 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6 Fig.3 Operating Current AEN Enable 14 12 ENABLE INPUT VOLTAGE : VAEN[V] 0 3.0 Fig.4 Operating Current AEN Enable 3.0 Fig.5 Standby Current AEN Disable VCC=3.0V Ta=25°C Low to High 2.0 1.5 1.0 0.5 0.0 ENABLE INPUT VOLTAGE : VAEN[V] VCC=3.0V 2.5 2.0 1.5 1.0 0.5 0.0 2.5 OPERATING CURRENT : ISTB [μA] 10 8 6 4 2 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Low to High High to Low High to Low 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6 -50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.6 Standby Current AEN Disable 10.0 AEN INPUT CURRENT : IAEN[μA] 10.0 Fig.7 AEN Input Voltage 14 GATE OUTPUT VOLTAGE : VGATE [V] Fig.8 AEN Input Voltage Ta=25°C AEN INPUT CURRENT : IAEN[μA] VCC=3.0V 8.0 12 10 8 6 4 2 0 2 Ta=25°C 8.0 6.0 6.0 4.0 4.0 2.0 2.0 0.0 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6 0.0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 3 4 5 SUPPLY VOLTAGE : VCC[V] 6 Fig.9 AEN Input Current 14 GATE OUTPUT VOLTAGE : VGATE[V] VCC=3.0V 12 10 8 6 4 2 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.10 AEN Input Current 300 Ta=25°C 300 Fig.11 GATE Output Voltage VCC=3.0V DISC ON RESISTANCE : RDISC[Ω] DISC ON RESISTANCE : RDISC[Ω] 250 200 150 100 50 0 2 3 4 5 SUPPLY VOLTEGE : VCC[V] 6 250 200 150 100 50 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.12 GATE Output Voltage Fig.13 DISC ON Resistance Fig.14 DISC ON Resistance www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/12 2011.05 - Rev.B BD2270HFV Technical Note 200 160 120 80 40 0 Ta=25°C, CGATE=500pF TURN ON TIME1 : TON1[μs] 200 350 VCC=3.0V, CGATE=500pF Ta=25°C, CGATE=500pF TURN ON TIME1 : TON1[μs] 160 TURN ON TIME2 : TON2[μs] 300 250 200 150 100 50 0 120 80 40 0 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6 -50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6 Fig.15 GATE Rise Time 1 Fig.16 GATE Rise Time 1 Fig.17 GATE Rise Time 2 350 VCC=3.0V, CGATE=500pF TURN OFF TIME : TOFF[μs] 20 20 Ta=25°C, CGATE=500pF VCC=3.0V, CGATE=500pF TURN OFF TIME : TOFF[μs] 300 TURN ON TIME2 : TON2[μs] 250 200 150 100 50 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 16 16 12 8 4 0 12 8 4 0 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6 -50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.18 GATE Rise Time 2 Fig.19 GATE Fall Time Fig.20 GATE Fall Time 100.0 100.0 VCC=5.0V VCC=3.0V GATE DRIVE CURRENT : IG[μA] 10.0 GATE DRIVE CURRENT : IG[μA] 0 2 4 6 8 10.0 1.0 1.0 0.1 GATE VOLTAGE ABOVE SUPPLY : VGATE[V] 0.1 0 2 4 6 GATE VOLTAGE ABOVE SUPPLY : VGATE[V] 8 Fig.21 GATE Drive Current Fig.22 GATE Drive Current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/12 2011.05 - Rev.B BD2270HFV ●Waveform Data VAEN (5V/div) VAEN (5V/div) VAEN (5V/div) Technical Note VCC=3.0V CGATE=500pF VCC=3.0V CGATE=500pF VCC=3.0V CGATE=500pF VGATE (2V/div) VGATE (2V/div) VGATE (2V/div) TIME (1ms/div) TIME (100μs/div) TIME (5μs/div) Fig.23 GATE Rise / Fall Characteristics Fig.24 GATE Rise Characteristics Fig.25 GATE Fall Characteristics VAEN (5V/div) VCC=3.0V RTF025N03 VGATE VAEN (5V/div) VAEN (5V/div) VCC=3.0V RTF025N03 VGATE VGATE VCC=3.0V RTF025N03 CL = 100μF VOUT_SWITCH (2V/div) (2V/div) VOUT_SWITCH VOUT_SWITCH (2V/div) TIME (100μs/div) TIME (5μs/div) TIME (20ms/div) Fig.26 GATE Switch Rise Characteristics Fig.27 GATE Switch Fall Characteristics Fig.28 GATE Switch Fall Characteristics VAEN (5V/div) VCC=3.0V RSS130N03 VAEN (5V/div) VCC=3.0V RSS130N03 VGATE VOUT_SWITCH (2V/div) (2V/div) VGATE VOUT_SWITCH TIME (100μs/div) TIME (10μs/div) Fig.29 GATE Switch Rise Characteristics MOSFET : RTF025N03 RSS130N03 3.3V V IN_SWIT CH V OUT_SWIT CH CL Fig.30 GATE Switch Fall Characteristics 1uF GATE V CC ON/OFF AEN DISC GND BD2270HFV Fig.31 Switch Rise / Fall Characteristics Measurement Circuit Diagram www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/12 2011.05 - Rev.B BD2270HFV ●Block Diagram GATE Technical Note VCC OSC Charge Pump (x3) GND DISC AEN Control VCC GND AEN 1 2 3 5 GATE 4 DISC Fig.32 Block Diagram Fig.33 Pin Configuration ●Pin description PIN No. 1 2 3 4 5 PIN name VCC GND AEN DISC GATE I/O I O O Function Power input terminal Ground terminal Control input terminal Turn ON the external MOSFET switch with high level input. High level input  2.0V, Low level input  0.8V Switch output discharge terminal GATE drive output terminal Used to connect the gate of the external N-channel MOSFET. ●I/O circuit Pin name Pin No. Equivalent circuit AEN 3 DISC 4 GATE 5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/12 2011.05 - Rev.B BD2270HFV ●Functional Description Technical Note The BD2270HVF is a driver IC to use an N-channel MOSFET as a high side load switch. This IC incorporates the following functions. 1. GATE drive A voltage to drive the gate of N-channel MOSFET is generated by a built-in charge pump in the BD2270HFV. The built-in charge pump in the BD2270HFV generates a voltage three times as high as the power supply voltage at the GATE terminal. In addition, since this IC has a built-in capacitor for the charge pump, it needs no external parts. The charge pump operates when the AEN is set to High. When the AEN is set to Low, the GATE terminal voltage is fixed to the GND level. 2. Output discharge circuit The output discharge circuit is enabled when the AEN is set to Low. When the discharge circuit is activated, the 200Ω(Typ.) MOSFET switch located between the DISC terminal and the GND terminal turns ON. Connecting between the DISC terminal and the source side (load side) of the N-channel MOSFET makes it possible to immediately discharge capacitive load. Soft start function When the AEN terminal input voltage reaches the High level, the built-in charge pump in the BD2270HFV charges the gate of the N-channel MOSFET. The turn-on time of the N-channel MOSFET is determined by the GATE capacity. In addition, connecting a capacitor to the GATE terminal makes it possible to slow the rise of turn-on time of the N-channel MOSFET, thus achieving reduction of the inrush current to a large capacitive load. Analog control input terminal The AEN input of the BD2270HFV is connected to the built-in hysteresis comparator. Consequently, even analog signals can control the BD2270HFV, thus facilitating the control of the switch ON-OFF sequence. 3. 4. VCC VIN_SWITCH VAEN VGATE VOUT_SWITCH 放電回路 Discharge circuit ON OFF ON Fig. 34 Operation Timing * To turn ON the power supply (VCC, VIN_SWITCH), set the AEN to Low. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/12 2011.05 - Rev.B BD2270HFV ●Application Circuit 1. Configuration of 3.3V load switch Technical Note 3.3V V IN_SWITCH V OUT_SWITCH 3.3V Load V CC ON/OFF AEN GATE DISC GND BD2270HFV Fig.35 Configuration of 3.3V Load Switch 2. Configuration of 5V load switch 5V 5V Load VCC ON/OFF AEN GATE DISC GND BD2270HFV Fig.36 Configuration of 5V Load Switch A 5V load switch can be configured like the 3.3V load switch. However, if the external N-channel MOSFET is low VGSS, clamp it with Zener diode and the like. 3. Configuration of low-voltage load switch 1.2V 3.3V 1.2V Load VCC AEN ON/OFF GATE DISC GND BD2270HFV Fig.37 Configuration of Low-voltage Load Switch Providing BD2270HFV drive power supply enables configuration of a low-voltage load switch. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/12 2011.05 - Rev.B BD2270HFV 4. Soft start configuration Technical Note 3.3V 3.3V Load V CC ON/OFF AEN GATE DISC GND BD2270HFV Fig.38 Soft Start Configuration Connecting an external capacitor to the GATE terminal of the BD2270HFV makes it possible to slow the rise of the N-channel MOSFET, thus achieving reduction of the inrush current to the large-capacity capacitor mounted on the load side. ●Application Information This system connection diagram gives no warranty to the operation as application. To change the external circuit constant or else and use this IC, determine the application allowing for an adequate margin with consideration given to variations in external parts and ICs including not only static characteristics but also transient characteristics. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/12 2011.05 - Rev.B BD2270HFV ●Thermal Derating Characteristics (HVSOF5) Technical Note 800 700 POWER DISSIPATION : Pd (mW) 600 500 400 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta (℃) Fig. 39 Power dissipation curve (Pd-Ta Curve) Mounted on a 70 mm70 mm1.6 mm glass epoxy PCB www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/12 2011.05 - Rev.B BD2270HFV Technical Note ●Notes for use (1) Absolute Maximum Ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical safety measures including the use of fuses, etc. (2) Operating conditions These conditions represent a range within which characteristics can be provided approximately as expected. The electrical characteristics are guaranteed under the conditions of each parameter. (3) Reverse connection of power supply connector The reverse connection of power supply connector can break down ICs. Take protective measures against the breakdown due to the reverse connection, such as mounting an external diode between the power supply and the IC’s power supply terminal. (4) Power supply line Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. In this regard, for the digital block power supply and the analog block power supply, even though these power supplies has the same level of potential, separate the power supply pattern for the digital block from that for the analog block, thus suppressing the diffraction of digital noises to the analog block power supply resulting from impedance common to the wiring patterns. For the GND line, give consideration to design the patterns in a similar manner. Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal. At the same time, in order to use an electrolytic capacitor, thoroughly check to be sure the characteristics of the capacitor to be used present no problem including the occurrence of capacity dropout at a low temperature, thus determining the constant. (5) GND voltage Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state. Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric transient. (6) Short circuit between terminals and erroneous mounting In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous mounting can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or between the terminal and the power supply or the GND terminal, the ICs can break down. (7) Operation in strong electromagnetic field Be noted that using ICs in the strong electromagnetic field can malfunction them. (8) Inspection with set PCB On the inspection with the set PCB, if a capacitor is connected to a low-impedance IC terminal, the IC can suffer stress. Therefore, be sure to discharge from the set PCB by each process. Furthermore, in order to mount or dismount the set PCB to/from the jig for the inspection process, be sure to turn OFF the power supply and then mount the set PCB to the jig. After the completion of the inspection, be sure to turn OFF the power supply and then dismount it from the jig. In addition, for protection against static electricity, establish a ground for the assembly process and pay thorough attention to the transportation and the storage of the set PCB. (9) Input terminals In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of the parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input terminals a voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not apply a voltage to the input terminals when no power supply voltage is applied to the IC. In addition, even if the power supply voltage is applied, apply to the input terminals a voltage lower than the power supply voltage or within the guaranteed value of electrical characteristics. (10) Ground wiring pattern If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well. (11) External capacitor In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc. (12) Thermal design Perform thermal design in which there are adequate margins by taking into account the power dissipation (Pd) in actual states of use. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 11/12 2011.05 - Rev.B BD2270HFV ●Ordering part number Technical Note B D 2 Part No. 2 7 0 H F V - T R Part No. Package HFV: HVSOF5 Packaging and forming specification TR: Embossed tape and reel HVSOF5 1.6±0.05 1.0±0.05 5 4 (0.8) 0.2MAX Tape Quantity Direction of feed Embossed carrier tape 3000pcs TR The direction is the 1pin of product is at the upper right when you hold 1.2±0.05 (MAX 1.28 include BURR) (0.3) (0.05) 1.6±0.05 4 5 (0.91) (0.41) ( reel on the left hand and you pull out the tape on the right hand 1pin ) 123 321 0.13±0.05 S 0.6MAX +0.03 0.02 −0.02 0.1 0.5 0.22±0.05 S 0.08 M Direction of feed (Unit : mm) Reel ∗ Order quantity needs to be multiple of the minimum quantity. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 12/12 2011.05 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A