BD2320UEFJ-LAE2

Datasheet 100 V VB 3.5 A/4.5 A Peak Current High Frequency High-Side and Low-Side Driver BD2320EFJ-LA BD2320UEFJ-LA General Description Key Specification This is the product guarantees long time support in industrial market. ◼ ◼ ◼ ◼ ◼ ◼ ◼ BD2320EFJ-LA and BD2320UEFJ-LA are the 100 V maximum voltage High-Side and Low-Side gate drivers which can drive external Nch-FET using the bootstrap method. The driver includes a 100 V bootstrap diode and independent inputs control for High-Side and Low-Side. 3.3 V and 5.0 V are available for interface voltage. Under Voltage Lockout circuits are built in for High-Side and Low-Side. High-Side Supply Voltage and Floating Voltage:100 V Output Voltage Range: 7.5 V to 14.5 V Output Current Io+/Io-: 3.5 A/4.5 A Propagation Delay: 27 ns (Typ) Delay Matching: 12 ns (Max) Offset Voltage Pin Leak Current: 10 µA (Max) Operating Temperature Range: -40 °C to +125 °C Package HTSOP-J8 W (Typ) x D (Typ) x H (Max) 4.9 mm x 6.0 mm x 1.0 mm Features ◼ Long Time Support Product for Industrial Applications. ◼ Under Voltage Lockout (UVLO) for High-Side and Low-Side Driver ◼ 3.3 V and 5.0 V Interface Voltage ◼ Output In-phase with Input Signal Applications ◼ ◼ ◼ ◼ Power Supplies for Telecom and Datacom. MOSFET Application Half-bridge and Full-bridge Converters Forward Converters Typical Application Circuit Up to 88 V 12 V HIN HIN VB LIN LIN HO VCC GND 〇Product structure : Silicon integrated circuit www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 TO LOAD VS LO 〇This product has no designed protection against radioactive rays. 1/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Pin Configuration (TOP VIEW) VCC 1 8 LO VB 2 7 GND EXP-PAD HO 3 6 LIN VS 4 5 HIN Pin Description Pin No. Pin Name Function 1 VCC Low-Side supply voltage 2 VB High-Side supply voltage 3 HO High-Side output 4 VS High-Side return 5 HIN Logic input for High-Side 6 LIN Logic input for Low-Side 7 GND 8 LO Low-Side output - EXP-PAD Connect to GND Ground Block Diagram VCC BOOT Di VB VCC VCC UVLO HIN Input Logic HO Level shift DRV VS VCC UVLO VCC LIN Input Logic Level shift DRV LO GND www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 2/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Absolute Maximum Rating (Ta = 25 °C) Parameter Symbol Rating Unit VB - VS Voltage VBS -0.3 to +15 V Voltage on VB VVB -0.3 to +100 V Voltage on VS VVS -15 to +100 V Voltage on HO VHO VVS-0.3 to VVB+0.3 V VCC Voltage VCC -0.3 to +15 V Voltage on LO VLO -0.3 to VCC+0.3 V VHIN, VLIN -0.3 to VCC+0.3 V SR -50 to +50 V/ns Tjmax 150 °C Tstg -55 to +150 °C Voltage on HIN and LIN Voltage Slew Rate on VB, VS Maximum Junction Temperature Storage Temperature Range Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing board size and copper area so as not to exceed the maximum junction temperature rating. Thermal Resistance (Note 1) Parameter Symbol Thermal Resistance (Typ) Unit 1s(Note 3) 2s2p(Note 4) θJA 206.4 45.2 °C/W ΨJT 21 13 °C/W HTSOP-J8 Junction to Ambient Junction to Top Characterization Parameter(Note 2) (Note 1) Based on JESD51-2A (Still-Air). (Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note 3) Using a PCB board based on JESD51-3. (Note 4) Using a PCB board based on JESD51-5, 7. Layer Number of Measurement Board Single Material Board Size FR-4 114.3 mm x 76.2 mm x 1.57 mmt Top Copper Pattern Thickness Footprints and Traces 70 μm Layer Number of Measurement Board 4 Layers Material Board Size FR-4 114.3 mm x 76.2 mm x 1.6 mmt Top Thermal Via(Note 5) Pitch Diameter 1.20 mm Φ0.30 mm 2 Internal Layers Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70 μm 74.2 mm x 74.2 mm 35 μm 74.2 mm x 74.2 mm 70 μm (Note 5) This thermal via connects with the copper pattern of all layers. Recommended Operating Conditions Parameter Symbol Min Typ Max Unit Operating Temperature Topr -40 +25 +125 °C Voltage on VB VVB -0.3 - +95 V Voltage on VS VVS -7.0 - +95 V VB - VS Voltage VBS 7.0 - 14.5 V VHIN, VLIN 0 - VCC V VCC 7.5 - 14.5 V Voltage on HIN LIN VCC Voltage www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 3/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Electrical Characteristics (Unless otherwise specified Ta = -40 °C to +125 °C, VCC = 12.0 V, VBS = 12.0 V, VVS = VGND, HO = open, LO = open) Parameter Symbol Min Typ Max Unit Conditions Offset supply Leakage Current ILK - 0 10 μA VVB = VVS = 100 V Quiescent VBS Supply Current IQBS 40 80 160 μA VLIN = VHIN = 0 V Operating VBS Supply Current IOBS 2.75 5.50 11.00 mA f = 500 kHz Quiescent VCC Supply Current IQCC 60 120 240 μA VLIN = VHIN = 0 V Operating VCC Supply Current IOCC 3.00 6.00 12.00 mA f = 500 kHz VCC UVLO Rising Threshold VCCUVR 4.6 6.0 7.4 V VCC UVLO Falling Threshold VCCUVF 4.2 5.5 6.8 V VCC UVLO Hysteresis VCCUVH - 0.5 - V VBS UVLO Rising Threshold VBSUVR 4.1 5.4 6.7 V VBS UVLO Falling Threshold VBSUVF 3.7 4.9 6.1 V VBS UVLO Hysteresis VBSUVH - 0.5 - V Logic “1” Input Threshold Voltage VIH 1.50 2.15 2.80 V Logic “0” Input Threshold Voltage VIL 0.80 1.25 1.70 V Input Threshold Hysteresis VINHYS 0.3 0.9 - V Input Pulldown Resistance RIN 50 100 150 kΩ VOH - 16 - mV VOL - 8 - mV IO+ - 3.5 - A VLO, VHO = 0 V IO- - 4.5 - A VLO, VHO = 12 V Bootstrap Diode Forward Voltage1 VF1 0.26 0.53 1.16 V IVCC-VB = 100 μA Bootstrap Diode Forward Voltage2 VF2 0.95 1.90 3.80 V IVCC-VB = 100 mA Bootstrap Diode Dynamic Resistance RD 5.0 10.0 20.0 Ω IVCC-VB = 80 mA, 100 mA Circuit Current UVLO Input Output High Level Output Voltage, VCC - VLO, VVB - VHO Low Level Output Voltage, VLO GND, VHO - VVS Output High Short Circuit Pulse Current(Note 6) Output Low Short Circuit Pulse Current(Note 6) VCC = 12 V, VVB = 12 V, VVS = 0 V, Io = 10 mA VCC = 12 V, VVB = 12 V, VVS = 0 V, Io = 10 mA Bootstrap Diode (Note 6) Not 100 % tested. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 4/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Electrical Characteristics - continued (Unless otherwise specified Ta = -40 °C to +125 °C, VCC = 12.0 V, VBS = 12.0 V, VVS = VGND, HO = open, LO = open) Parameter Symbol Min Typ Max HO Turn-on Propagation Delay tONH 10 27 50 LO Turn-on Propagation Delay tONL 10 27 50 HO Turn-off Propagation Delay tOFFH 10 29 50 LO Turn-off Propagation Delay tOFFL 10 29 50 tRH - 8 - HO Turn-on Rise Time Unit Conditions HO = 1 nF ns LO Turn-on Rise Time tRL - 8 - LO = 1 nF HO Turn-off Fall Time tFH - 6 - HO = 1 nF LO Turn-off Fall Time tFL - 6 - LO = 1 nF tM1 - 2.0 12 tM2 - 2.0 12 Delay Matching, HS Turn-off, LS Turnon Delay Matching, HS Turn-on, LS Turnoff www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 5/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Typical Performance (Reference Data) 1,000 Quiescent VCC Supply Current: IQCC [μA] Quiescent VBS Supply Current: IQBS [μA] 1000 900 800 700 600 500 400 300 200 100 0 800 700 600 500 400 300 200 100 0 0 5 10 VB - VS Voltage: VBS [V] 15 0 Figure 2. Quiescent VBS Supply Current vs VB - VS Voltage 10 VCC Voltage: VCC [V] 15 Operating VCC Supply Current: IOCC [mA] 100.00 10.00 1.00 0.10 0.01 0.001 5 Figure 3. Quiescent VCC Supply Current vs VCC Voltage 100.00 Operating VBS Supply Current: IOBS [mA] 900 1.00 0.10 0.01 0.001 0.1 10 1000 Frequency: fosc [kHz] Figure 4. Operating VBS Supply Current vs Frequency www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 10.00 0.1 10 1000 Frequency: fosc [kHz] Figure 5. Operating VCC Supply Current vs Frequency 6/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Typical Performance (Reference Data) -continued 4.5 VIH (Rising) 4.0 VIL (Falling) 50 High Level Output Voltage VCC-VLO: VOH [mV] Input Threshold Voltage: VIH, VIL [V] 5.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 VCC VCC==12 12VV VCC==15 15VV VCC 30 25 20 15 10 5 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature [˚C] Temperature [˚C] Figure 7. High Level Output Voltage VCC - VLO vs Temperature Low Level Output Voltage VLO-GND: VOL [mV] High Level Output Voltage VVB-VHO: VOH [mV] 35 40 -40 -25 -10 5 20 35 50 65 80 95 110125 50 40 VCC VCC==77VV 35 Figure 6. Input Threshold Voltage vs Temperature 45 45 VVB VVB = 77 V V VVB = V VVB = 12 V VVB = V VVB = 15 15 V 30 25 20 15 10 5 0 25 VCC VCC==77VV 20 VCC==12 12VV VCC VCC VCC==15 15VV 15 10 5 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature [˚C] Temperature [˚C] Figure 8. High Level Output Voltage VVB - VHO vs Temperature www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 9. Low Level Output Voltage VLO - GND vs Temperature 7/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA 25 7.5 VVB V ==77VV VCC UVLO Threshold: VCCUVR, VCCUVF [V] Low Level Output Voltage VHO-VVS: VOL [mV] Typical Performance (Reference Data) -continued VB 20 VVB VVB==12 12VV VVB==15 15VV VVB 15 10 5 0 VCCUVR (Rising) 7.0 6.5 6.0 5.5 5.0 4.5 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110125 Temperature [˚C] Temperature [˚C] Figure 10. Low Level Output Voltage VHO - VVS vs Temperature Figure 11. VCC UVLO Threshold vs Temperature 6.5 50 Propagation Delay: tONH, tONL, tOFFH, tOFFL [ns] VBS UVLO Threshold: VBSUVR, VBSUVF [V] VCCUVF (Fallring) VBSUVR (Rising) 6.0 VBSUVF (Falling) 5.5 5.0 4.5 4.0 3.5 45 40 35 LO Turn-on HO Turn-on LO Turn-off HO Turn-off 30 25 20 15 10 5 0 -40 -25 -10 5 20 35 50 65 80 95 110125 Temperature [˚C] -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature [˚C] Figure 12. VBS UVLO Threshold vs Temperature www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 13. Propagation Delay vs Temperature 8/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA 50 12 LO Turn-on 45 HO Turn-on 40 LO Turn-off 35 HO Turn-off HS Turn-off, LS Turn-on 10 Delay Matching: tM1, tM2 [ns] Propagation Delay: tONH, tONL, tOFFH, tOFFL [ns] Typical Performance (Reference Data) -continued 30 25 20 15 10 LS Turn-off, HS Turn-on 8 6 4 2 5 0 0 7 8 9 10 11 12 13 14 15 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temparature [˚C] VCC Voltage: VCC [V] Figure 14. Propagation Delay vs VCC Voltage Figure 15. Delay Matching vs Temperature 1.00E+00 1.5 1.0 Diode Current [A] Diode Current [A] 1.00E-01 0.5 1.00E-02 1.00E-03 1.00E-04 1.00E-05 0.0 0 1 2 3 1.00E-06 4 5 6 7 8 9 10 11 12 Diode Voltage [V] 0 Figure 16. Diode Current vs Diode Voltage www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 VF1 VF2 1 2 Diode Voltage [V] 3 Figure 17. Diode Current vs Diode Voltage (VF1, VF2) 9/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Timing Chart 50 % HIN LIN 50 % tONH tONL tOFFH tOFFL 90 % HO LO 90 % 10 % 10 % tRH tRL tFH tFL www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 10/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Selection of Components Externally Connected 1. Gate Resistor The gate resistor RG(ON), RG(OFF) can be selected to control the switching speed of the external FET. The turn on time (tSW) is decided by the gate resistor, gateto-source charge (QGS) and gate-to-drain charge (QGD) of the external FET. In mean current flowing to a gate of the external FET is calculated as follows. 𝐼𝐺 = VCC 𝑄𝐺𝑆 +𝑄𝐺𝐷 (1) 𝑡𝑆𝑊 CGD RONP The turn on gate resistor is calculated as follows. 𝑅𝑇𝑂𝑇𝐴𝐿(𝑂𝑁) = 𝑅𝑂𝑁𝑃 + 𝑅𝐺(𝑂𝑁) = DRV 𝑉𝐶𝐶 −𝑉𝐺𝑆 RONN (2) 𝐼𝐺 𝑄𝐺𝑆 +𝑄𝐺𝐷 𝐼𝐺 = (𝑄𝐺𝑆 +𝑄𝐺𝐷 )(𝑅𝑂𝑁𝑃 +𝑅𝐺(𝑂𝑁) ) (3) (𝑉𝐵𝑆 −𝑉𝐺𝑆(𝑡ℎ) ) 𝑑𝑡 RG(OFF) CGS Figure 18. Gate Driver Equivalent Circuit The switching slew rate of the external FET (dVs/dt) also can be controlled by the gate resistor. The switching slew rate of the external FET (dVs/dt) is calculated as follows. dVs RG(ON) GND The turn on time is calculated as follows. 𝑡𝑆𝑊 = LO 𝐼 =𝐶𝐺 IDS (4) 𝑅𝑆𝑆 where: 𝐶𝑅𝑆𝑆 is the feedback capacitance. VGS Vth Substituting equation (4) into equation (2) yields the following formulas. 𝑅𝑇𝑂𝑇𝐴𝐿(𝑂𝑁) = 𝑅𝑂𝑁𝑃 + 𝑅𝐺(𝑂𝑁) = 𝑅𝐺(𝑂𝑁) = 𝑉𝐵𝑆 −𝑉𝐺𝑆(𝑡ℎ) 𝐶𝑅𝑆𝑆 𝑑𝑉𝑠 𝑑𝑡 𝑉𝐵𝑆 −𝑉𝐺𝑆(𝑡ℎ) 𝐶𝑅𝑆𝑆 𝑑𝑉𝑠 𝑑𝑡 − 𝑅𝑂𝑁𝑃 (5) VDS tSW Figure 19. Gate Charge Transfer Characteristics (6) When the gate driver output turns off, current flows to gate resistor through CGD of the external FET. To prevent that the gate voltage of the external FET becomes higher than the threshold voltage and the external FET self-turn-on, please set up the turn off resistor (RG(OFF)) that satisfies the following formulas. 𝑉𝐺𝑆(𝑡ℎ) ≥ 𝐼𝐺 (𝑅𝑂𝑁𝑁 + 𝑅𝐺(𝑂𝐹𝐹) ) = 𝐶𝐺𝐷 𝑅𝐺(𝑂𝐹𝐹) ≥ 𝑉𝐺𝑆(𝑡ℎ) 𝐶𝐺𝐷 𝑑𝑉𝑠 𝑑𝑡 𝑑𝑉𝑠 𝑑𝑡 (𝑅𝑂𝑁𝑁 + 𝑅𝐺(𝑂𝐹𝐹) ) − 𝑅𝑂𝑁𝑁 www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 (7) (8) 11/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Selection of Components Externally Connected -continued 2. Bootstrap Capacitor CBS To reduce ripple voltage, ceramic capacitors with low ESR value are recommended for use in the bootstrap circuit. The maximum voltage drop (ΔVBS) that we have to guarantee when the high-side external FET is in on state must be: ∆𝑉𝐵𝑆 ≤ 𝑉𝐶𝐶 − 𝑉𝐹 − 𝑉𝐵𝑆𝑈𝑉𝑅 − 𝑉𝑂𝐿 (9) where: 𝑉𝐶𝐶 is the gate driver supply voltage, 𝑉𝐹 is the forward voltage drop of the bootstrap diode 𝑉𝐵𝑆𝑈𝑉𝑅 is the VBS UVLO release voltage 𝑉𝑂𝐿 is Drain-source voltage of Low side external FET device The total charge supplied (𝑄𝑇𝑂𝑇𝐴𝐿 ) by the bootstrap capacitor is calculated by following formula. 𝑄𝑇𝑂𝑇𝐴𝐿 = 𝑄𝐺 + (𝐼𝐿𝐾𝐺𝑆 + 𝐼𝐿𝐾𝐷𝐼𝑂 + 𝐼𝑄𝐵𝑆 )𝑡𝐻𝑂𝑁 (10) where 𝑄𝐺 is the total gate charge of external FET, 𝐼𝐿𝐾𝐺𝑆 is the gate-source leakage current of external FET, 𝐼𝐿𝐾𝐷𝐼𝑂 is the bootstrap diode leakage current, 𝐼𝑄𝐵𝑆 is the high-side quiescent current, 𝑡𝐻𝑂𝑁 is the high-side switch on time. The bootstrap capacitor value should satisfy the following formula. 𝐶𝐵𝑆 ≥ 𝑄𝑇𝑂𝑇𝐴𝐿 (11) ∆𝑉𝐵𝑆 It is not able to keep being turned on the high side in the same way as the high side switch driver because of the specifications of the bootstrap circuits. 3. Input Capacitor Mount a low-ESR ceramic input capacitor near the VCC pin to reduce input ripple. For VCC capacitor, it is recommended to use a ceramic capacitor which has a value of two times or larger than that of the boot strap capacitor. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 12/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA I/O Equivalence Circuits Pin No. Pin Name Pin No. Pin Equivalence Circuit Pin Name Pin Equivalence Circuit VCC 1 kΩ HIN 1 VCC 5 HIN 100 kΩ GND GND GND VB 1 kΩ LIN 2, 4 VB, VS 6 GND LIN VS GND GND VB 3 HO VCC 8 HO LO LO GND VS www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 100 kΩ 13/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Operational Notes 1. Reverse Connection of Power Supply Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply pins. 2. Power Supply Lines Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. Ground Voltage Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. 4. Ground Wiring Pattern When using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance. 5. Recommended Operating Conditions The function and operation of the IC are guaranteed within the range specified by the recommended operating conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical characteristics. 6. Inrush Current When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections. 7. Testing on Application Boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. 8. Inter-pin Short and Mounting Errors Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few. 9. Unused Input Pins Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power supply or ground line. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 14/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Operational Notes – continued 10. Regarding the Input Pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Resistor Transistor (NPN) Pin A Pin B C E Pin A N P+ P N N P+ N Pin B B Parasitic Elements N P+ N P N P+ B N C E Parasitic Elements P Substrate P Substrate GND GND Parasitic Elements GND Parasitic Elements GND N Region close-by Figure 20. Example of Monolithic IC Structure 11. Ceramic Capacitor When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 15/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Ordering Information B D Part Number 2 3 2 0 Production Line None: Production line A U: Production line B(Note7) x E F Package EFJ: HTSOP-J8 J - Product Class LA: For industrial applications L A E 2 Packaging and Forming Specification E2: Embossed Tape and Reel (Note7) For the purpose of improving production efficiency, this product has multi-line configuration. Electric characteristics noted in this datasheet does not differ between the 2 lines. Production line B is recommended for new product. Marking Diagram BD2320EFJ-LA BD2320UEFJ-LA HTSOP-J8(TOP VIEW) HTSOP-J8(TOP VIEW) Part Number Marking B D 2 3 2 0 Part Number Marking D 2 3 2 0 U LOT Number Pin 1 Mark www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 LOT Number Pin 1 Mark 16/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Physical Dimension and Packing Information Package Name www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 HTSOP-J8 17/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 BD2320EFJ-LA BD2320UEFJ-LA Revision History Date Revision 04.Dec.2020 001 29.Mar.2022 002 Changes New Release P1 Added the part number for production line B to the header P17 Added an information for the production line B to Ordering Information P17 Added a marking diagram for the production line B www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 18/18 TSZ02201-0Q2Q0A800840-1-2 29.Mar.2022 Rev.002 Notice Precaution on using ROHM Products 1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used. However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software). 3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Datasheet General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001