BD39031MUF-CE2

Datasheet Power Management IC for Automotive Power Management IC for ADAS Applications BD39031MUF-C Key Specifications General Description  Input Voltage Range: 4.0 V to 28 V  Output Voltage: BUCK1 Voltage 3.3 V BUCK2 Voltage 1.2 V BUCK3 Voltage 0.8 V to 2.5 V BOOST4 Voltage 5.0 V  Maximum Output Current: BUCK2, BUCK3 2.5 A BOOST4 0.5 A  Switching Frequency: 2.2 MHz (Typ)  Standby Current: 0 μA (Typ)  Operating Ambient Temperature Range: -40 °C to +125 °C BD39031MUF-C is a power management IC with Primary Buck Controller (BUCK1), Dual Secondary Buck Converter (BUCK2/BUCK3), and Secondary Boost Converter (BOOST4). This device contains Reset, Power Good, Watchdog Timer functions, and is suitable for ADAS application such as radar, camera, and LiDAR. In addition, this device contributes to ASIL level improvement of the system by BIST (Built-In Self Test) function and Mutual Monitoring function. Features                 AEC-Q100 Qualified (Note 1) Functional Safety Supportive Automotive Products Primary Buck Controller for 3.3 V Fixed Secondary Buck Converter for 1.2 V Output Fixed Secondary Buck Converter for Adjustable Output Secondary Boost Converter for 5.0 V Output Fixed Enable Input for Each Output Two Power Good Functions Reset Function for BUCK1 Adjustable Window Watchdog Timer Spread Spectrum Over Current Protection Over Voltage Protection Short Circuit Protection Thermal Shut Down Protection Thermal Warning Function Special Characteristics  Output Voltage Accuracy: BUCK1 VO1 Voltage BUCK2 VO2 Voltage BUCK3 FB Voltage BOOST4 VO4 Voltage Package ±1.5 % ±1.5 % ±1.5 % ±2.0 % W (Typ) x D (Typ) x H (Max) 6.0 mm x 6.0 mm x 1.0 mm VQFN40FV6060 (Note 1) Grade 1 Close-up Applications  ADAS Application (Radar Module, Camera Module, LiDAR Module, etc.)  ADAS ECU VQFN40FV6060 Wettable Flank Package Typical Application Circuit Battery VCC BOOT1 EN1 VREG VGH1 SW1 VO1 VGL1 CSN VO1 COMP1 PGND1S PGND1 RT VREG VS2 SSCGEN VO2 VO2 VO3 VO3 VO1 BD39031MUF-C SW2 SW2 VO2 PGND2 FB3 VS3 VO3S SW3 SW3 VO3 PGND3 VO4 VO4 SW4 VO4 EN2 EN3 EN4 SYNC WDEN WDIN RTW 〇Product structure : Silicon integrated circuit www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 PGND4 XRSTOUT PGOOD1 PGOOD2 XTWOUT GND 〇This product has no designed protection against radioactive rays. 1/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Contents General Description ................................................................................................................................................................ 1 Features ................................................................................................................................................................................. 1 Applications ............................................................................................................................................................................ 1 Key Specifications................................................................................................................................................................... 1 Package ................................................................................................................................................................................. 1 Typical Application Circuit ........................................................................................................................................................ 1 Pin Configurations................................................................................................................................................................... 3 Pin Descriptions ...................................................................................................................................................................... 4 Block Diagrams....................................................................................................................................................................... 5 Description of Blocks............................................................................................................................................................... 8 Absolute Maximum Ratings ................................................................................................................................................... 17 Thermal Resistance .............................................................................................................................................................. 17 Recommended Operating Conditions .................................................................................................................................... 18 Electrical Characteristics ....................................................................................................................................................... 18 Typical Performance Curves .................................................................................................................................................. 22 Timing Chart ......................................................................................................................................................................... 29 Application Example.............................................................................................................................................................. 34 Selection of Components Externally Connected ..................................................................................................................... 35 Operational Notes ................................................................................................................................................................. 46 Ordering Information ............................................................................................................................................................. 48 Marking Diagrams ................................................................................................................................................................. 48 Physical Dimension and Packing Information ......................................................................................................................... 49 Revision History .................................................................................................................................................................... 50 www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 2/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Pin Configurations TOP VIEW VO2 PGND2 SW2 SW2 VS2 VS3 SW3 SW3 PGND3 FB3 EXP-PAD 30 29 28 27 26 25 24 23 22 21 EXP-PAD EN2 31 20 VO3S EN3 32 19 RTW EN4 33 18 SYNC WDEN 34 17 GND WDIN 35 16 COMP1 SSCGEN 36 15 VO1 XRSTOUT 37 14 PGND1 PGOOD1 38 13 PGND1S EXP-PAD PGOOD2 39 12 CSN XTWOUT 40 11 VGL1 EXP-PAD www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 1 2 3 4 5 3/50 6 7 8 9 10 EXP-PAD TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Pin Descriptions Pin No. Pin Name Function 1 PGND4 2 SW4 BOOST4 switching node. 3 VO4 4 VREG BOOST4 feedback pin. Connect to VO4 output voltage. Internal regulator of 5 V output. Connect output capacitor. Can’t be used for external power supply. Switching frequency set pin. Connect resistor between RT and GND. Power ground of BOOST4 converter. 5 RT 6 VCC 7 EN1 8 BOOT1 9 SW1 BUCK1 switching node. (Floating ground for high side FET) 10 VGH1 BUCK1 gate driver for high side FET. Power supply. Enable input for internal reference circuit and BUCK1. Controlled by external microcomputer or pulled up to VCC. BUCK1 power supply for high side FET. Connect capacitor between BOOT1 and SW1. 11 VGL1 BUCK1 gate driver for low side FET. 12 CSN Differential current sense for BUCK1. Connect resistor between CSN and PGND1S. 13 PGND1S Differential current sense for BUCK1. Connect resistor between CSN and PGND1S. 14 PGND1 15 VO1 16 COMP1 17 GND 18 SYNC 19 RTW Analog ground. Synchronization input pin. This pin can be driven by external clock to set desired switching frequency. WDT frequency setting pin. Put resistor between the RTW pin and GND. 20 VO3S BUCK3 input for external sense voltage of VO3. 21 FB3 22 PGND3 23 SW3 BUCK3 switching node. 24 SW3 BUCK3 switching node. 25 VS3 Power supply for BUCK3. Connect to VO1 output voltage. 26 VS2 Power supply for BUCK2. Connect to VO1 output voltage. 27 SW2 BUCK2 switching node. 28 SW2 BUCK2 switching node. 29 PGND2 30 VO2 BUCK2 feedback pin. 31 EN2 Enable pin for BUCK2. 32 EN3 Enable pin for BUCK3. 33 EN4 Enable pin for BOOST4. 34 WDEN Enable pin for WDT. 35 WDIN Clock input pin for WDT. Power ground of BUCK1. BUCK1 feedback pin. Error amplifier output for BUCK1 controller. BUCK3 feedback pin. Input external resistance division between output and GND. Power ground for BUCK3. Power ground for BUCK2. 36 SSCGEN Enable pin for Spread Spectrum function. Connect to VREG or GND. 37 XRSTOUT Reset Nch open drain output pin. 38 PGOOD1 Power Good Nch open drain output pin for BUCK2. 39 PGOOD2 Power Good Nch open drain output pin for all outputs. 40 XTWOUT - EXP-PAD Thermal warning Nch open drain output pin. The EXP-PAD of the center of product is connected to PCB ground plane. The EXP-PADs on the center and corner of the product are shorted inside the package. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 4/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Block Diagrams VREG VO4 VCC VS2 EN1 VREF1 VREF1 UVLO VREG VCCUVLO UVLO VS2UVLO VS3 VREF2 VREF2 UVLO TSD TSDR / TSWR VREGUVLO UVLO VS3UVLO VO4 VO1 VO1RST VO1RST UVLO VO4UVLO CTL1/CTL2/CTL3/CTL4 VO1 CONTROL LOGIC EN2 CLK1/CLK2/CLK3/CLK4 VCCUVLO VREGUVLO VO1 VS2UVLO/VS3UVLO/VO4UVLO EN3 VO1RST OVDx UVDx OVPx SCPx OCPx TSDx/TSWx VO1 EN4 CLKDET VO1 BIST SYNC RT VREG XTWOUT DCDC OSC TW SSCGEN XRSTOUT VO1 RESET WDIN VO1 PGOOD1 WDT WDEN RTW PGOOD WDTOSC PGOOD2 LOGIC OSC VO1 COMP1 BOOT1 VGH1 SW1 VGL1 PGND1 CSN PGND1S VO4 SW4 PGND4 CTL1 CLK1 CTL2 BUCK1 CTL4 CLK4 CLK2 BUCK2 CTL3 BOOST4 CLK3 BUCK3 VS2 VO2 SW2 SW2 PGND2 VS3 FB3 VO3S SW3 SW3 PGND3 GND Figure 1. Top Block Diagram www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 5/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Block Diagrams - continued DRV VO1 VREG CLAMPER BOOT1 BOOTDRV GMAMP1 VREF1 GMAMP2 + + VC + PWMCOMP VGH1 - - DRV LOGIC + VREG CLK1 SW1 VGL1 OVP1 CLK1 SS SLOPE PGND1 COMP1 OCP1 CSN CUR SENSE PGND1S VO1 VREF2 OVP1 + OVD1 + VREF2 - Discharge PGND1 VREF2 SCP1 - UVD1 - VREF2 + + Figure 2. BUCK1 Block Diagram DRV CLK2 CUR SENSE SLOPE VO2 VS2 OCPH2 ERRAMP VREF1 PWMCOMP + + + DRV LOGIC CLK2 PGND2 VS2 OVP2 OCPH2 / OCPL2 SS SW2 Discharge PGND2 OCPL2 VREF2 + OVP2 VREF2 - + OVD2 OCPL TSD VREF2 - SCP2 + VREF2 - TSD2 TSW2 UVD2 + Figure 3. BUCK2 Block Diagram www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 6/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Block Diagrams - continued DRV CLK3 CUR SENSE SLOPE VS3 OCPH3 ERRAMP FB3 PWMCOMP + + VREF1 + DRV LOGIC CLK3 PGND3 OVP3 OCPH3 / OCPL3 SS SW3 VS3 Discharge PGND3 OCPL3 VO3S VREF2 + OVP3 + VREF2 - OVD3 OCPL TSD3 TSD VREF2 SCP3 - - VREF2 + TSW3 UVD3 + Figure 4. BUCK3 Block Diagram VO4 DRV ERRAMP VREF1 VREG PWMCOMP + + SW4 + CLK4 DRV LOGIC OVP4 OCP4 PGND4 SS CLK4 SLOPE OCP4 VREF2 + OVP4 VREF2 - + CUR SENSE OVD4 TSD VREF2 + SCP4 VREF2 - TSD4 TSW4 UVD4 + Figure 5. BOOST4 Block Diagram www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 7/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Description of Blocks 1. TOP BLOCK Reference Voltage (VREF1, VREF2) There are 2 reference voltages; VREF1 and VREF2. VREF1 is used for each regulator control reference voltage and VREF2 is used for each protection function reference voltage. After VCC input, VREF1 and VREF2 will startup when EN1 is turned to high. VREF1 and VREF2 will stop when EN1 is turned to low. Internal Regulator (VREG) VREG is 5 V (Typ) regulator for internal circuit. Needs to connect external capacitor to the VREG pin. After VCC input, VREG will startup when EN1 is turned to high. VREG will stop when EN1 is turned to low. Do not use VREG for any other purposes. Also internal regulator will be switched to VO4 after VO4 output becomes more than 4.5 V (Typ) and soft start of BOOST4 is completed. Under Voltage Lock-Out (UVLO) UVLO is under voltage lockout circuit. Prevents internal circuit malfunction when power supply startup or is at lower input voltage. Monitors VCC, VREG, VS2, VS3, and VO4 voltage and activates when each voltage goes under each threshold voltage. When VCCUVLO or VREGUVLO is detected, all the outputs will turn off. When VS2UVLO is detected, BUCK2 will turn off. When VS3UVLO is detected, BUCK3 will turn off. When VO4UVLO is detected, BOOST4 will turn off. Oscillator (LOGICOSC, WDTOSC, DCDCOSC) There are 3 types of oscillator. One for Control Logic, the second for Watch Dog Timer and the third for BUCK1, BUCK2, BUCK3 and BOOST4. BUCK3 clock phase is 180 deg shifted from BUCK1, BUCK2 and BOOST4 to reduce switching noise. Connect 9.1 kΩ between RT and GND. Spread Spectrum Clock Generator (SSCG) OSC block built in spread spectrum clock generator (SSCG) function. This function activates when the SSCGEN pin is connected to VREG. When the SSCGEN pin is connected to GND, SSCG function is disable. The modulation range of Spread Spectrum is between +6.2% (Typ) and -6.2% (Typ) from the typical frequency. Also, modulation frequency is set to 1.075 kHz (Typ). The modulation range and modulation frequency are fixed. Synchronization mode (SYNC) Switching frequency can be synchronized to an external clock signal using the SYNC pin. The SYNC pin allows the operating frequency to be varied above and below the frequency setting. Adjustment range is from +10 % to -10 %. The RT resistor must always be connected to initialize the operating frequency. Control Logic (CONTROL LOGIC) This block controls startup/stop sequence, Reset, Power Good, Watch Dog Timer, mutual monitoring function, Built-In Self Test (BIST), and each protection. Control Logic will be active when internal power supply VREGUVLO is released. When VREGUVLO is detected, Control Logic will reset and initialize. Reset (RESET) This block informs output voltage for microcomputer which is completely ON by reset signal. Pull up this pin to VO1 or external power supply using resistor. The XRSTOUT pin goes low when internal circuit is in abnormal conditions. The XRSTOUT pin goes high when all the following conditions are satisfied. a) VO1 voltage is higher than 2.6 V (Typ) b) BIST result are OK c) Mutual monitoring result are OK d) No detection of WDT FAST Timeout / SLOW Timeout XRSTOUT goes High 10 ms (Typ) after all conditions are satisfied. Power Good (PGOOD) This block informs whether each regulator output startups normally or not. Power Good have UVD and OVD for each regulator and asserts it by Power Good pin. Pull up this pin to VO1 or to external power supply using resistor. This product has 2 Power Good pins. Each pin monitors the following regulator. ・PGOOD1 : Only BUCK2 ・PGOOD2 : BUCK1, BUCK2, BUCK3, and BOOST4 PGOOD1, PGOOD2 goes High 10 ms (Typ) after all conditions are satisfied. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 8/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C TOP BLOCK - continued Built-In Self Test (BIST) When VCCUVLO and VREGUVLO are released, and VO1 voltage is higher than 2.6 V (Typ), BIST is performed and self-test for each OVD/UVD and RESET comparators are executed to check if each comparator correctly toggles their high/low output based on input voltage change. Once BIST ends without any error, the XRSTOUT pin becomes high. If an error is found during BIST, the XRSTOUT pin keeps low and BIST is repeated until it passes. Clock Mutual Detect (CLKDET) CLKDET block monitors each clock outputted from each OSC blocks mutually. If any one of their frequency exceeds range, XRSTOUT goes low. Thermal Warning (TW) This block monitors internal temperature and detect when it reaches 135 degree (Typ). Pull up this pin to VO1 or external power supply using resistor. The XTWOUT pin goes Low when internal temperature is higher than threshold. The XTWOUT pin goes High when internal temperature is lower than threshold. This block only warns of internal temperature getting high. Hence, all function works normally even with this function detected. Thermal Warning function works when VCCUVLO, VREGUVLO, and Reset function are not detected. When it is not working, the XTWOUT pin is kept at high level. 2. BUCK1 BLOCK BUCK1 is Primary Buck Controller. It is necessary to connect external MOSEFT. Output voltage is 3.3 V (Typ) fixed. ・GMAMP1 Error amplifier which have reference voltage VREF1 and VO1 divider input. Also phase compensation of BUCK1 can be adjust by inserting capacitor and resistor to the COMP1 pin. ・GMAMP2 Error amplifier which have output of GMAMP1 and current sense signal input. This block generates the VC voltage to control duty. ・SS Soft Start (SS) function prevent overshoot of output voltage and rush current by gradually increasing ON duty of switching pulse. Soft start time is fixed internally. ・CLAMPER CLAMPER limits the maximum and minimum value of coil current and works as over current protection. When coil current reaches maximum value, it makes duty small and reduces the output voltage. Similarly, when coil current reaches and minimum value, it increases duty and raise the output voltage. ・CURSENSE Detects the amount of current flowing through the inductance using resistor which is connected between the CSN pin and the PGND1S pin, and feedbacks current sense signal to GMAMP2. ・SLOPE This is the block which makes slope waveform from clock generated at OSC block. This slope waveform is combined with current sense and sends to PWMCOMP. ・PWMCOMP This compares slope waveform including current information with GMAMP2 output, and sends output signal to DRV block. ・DRV BUCK1 Driver block. Drives external FET which is connect to VGH1 and VGL1 by using signal from PWMCOMP. Pulse Skip Function BUCK1 controller needs on time for low side FET to charge the BOOT1 pin, because high side FET is driven by boot strap. Therefore, it sets minimum off time, and the output voltage is limited by this in the condition where the input and output voltage are close As for this countermeasure, DRV skips off pulse when the voltage difference of the input and output becomes small, and continuously turns on high side FET and keeps max duty to rise. The off pulse skip will occer 4 consectutive times as maximum. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 9/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Description of Blocks - continued 3. BUCK2 BLOCK BUCK2 is Secondary Buck converter. Output voltage is 1.2 V (Typ) fixed. EN2 = High turns on BUCK2 and EN2 = Low turns off BUCK2. ・ERRAMP ・SS ・SLOPE ・PWMCOMP ・DRV 4. Error Amplifier with reference voltage and VO2 divider input. Controls on duty width of switching pulse by internal COMP2 node which is an ERRAMP output. Capacitor and resistor for phase compensation are fixed. Soft Start (SS) function prevent overshoot of output voltage and rush current by gradually increasing on duty of switching pulse. Soft start time is fixed internally. This is the block which makes slope waveform from clock generated at OSC block. This slope waveform is combined with current sense and is sent to PWMCOMP. This compares slope waveform including current information with ERRAMP output, and sends output signal to DRV block. BUCK2 Driver block. Drives internal FET by using signal from PWMCOMP. BUCK3 BLOCK BUCK3 is Secondary Buck converter. Output voltage can be set by external resistor. EN3 = High turns on BUCK3 and EN3 = Low turns off BUCK3. ・ERRAMP ・SS ・SLOPE ・PWMCOMP ・DRV 5. Error Amplifier with reference voltage and FB3 input. Controls on duty width of switching pulse by internal COMP3 node which is an ERRAMP output. Capacitor and resistor for phase compensation are fixed. Soft Start (SS) function prevent overshoot of output voltage and rush current by gradually increasing on duty of switching pulse. Soft start time is fixed internally. This is the block which makes slope waveform from clock generated at OSC block. This slope waveform is combined with current sense and is sent to PWMCOMP. This compares slope waveform including current information with ERRAMP output, and sends output signal to DRV block. BUCK3 Driver block. Drives internal FET by using signal from PWMCOMP. BOOST4 BLOCK BOOST4 is Secondary Boost converter. Output voltage is 5.0 V (Typ) fixed. EN4 = High turns on BOOST4 and EN4 = Low turns off BOOST4. ・ERRAMP ・SS ・SLOPE ・PWMCOMP ・DRV Error Amplifier with reference voltage and VO4 divider input. Controls on duty width of switching pulse by internal COMP4 node which is an ERRAMP output. Capacitor and resistor for phase compensation are fixed. Soft Start (SS) function prevent overshoot of output voltage and rush current by gradually increasing on duty of switching pulse. Soft start time is fixed internally. This is the block which makes slope waveform from clock generated at OSC block. This slope waveform is combined with current sense and is sent to PWMCOMP. After compared with slope waveform which has been combined with current sense and ERRAMP output, sends signal to DRV block. BOOST4 Driver block. Drives internal FET by using signal from PWMCOMP. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 10/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Description of Blocks - continued 6. Detection Function Over Voltage Detection (OVD) If output voltage goes higher than threshold voltage, OVD is detected and the PGOOD pin goes down to low. Detection pins are VO1, VO2, FB3, and VO4. If VO2 detects OVD, PGOOD1 goes down to low and if either VO1, VO2, FB3, or VO4 detects OVD, PGOOD2 goes down to low. Under Voltage Detection (UVD) If output voltage goes lower than threshold voltage, UVD is detected and the PGOOD pin goes down to low. Detection pins are VO1, VO2, FB3 and VO4. If VO2 detects UVD, PGOOD1 goes down to low and if either VO1, VO2, FB3, or VO4 detects UVD, PGOOD2 goes down to low. 7. Protection Function Over Voltage Protection (OVP) If output voltage goes higher than threshold voltage, OVP is detected and switching will turn off. Detection pins are VO1, VO2, VO3S, and VO4. If OVP is detected for continuous 1ms (Typ), switching will turn off and soft start will discharge. After that, output continues to stop for 10 ms (Typ) and re-starts automatically by soft start. Short Circuit Protection (SCP) When output voltage is shorted to GND (or when output voltage is lower than SCP threshold voltage) for 1 ms (Typ), switching will turn off and soft start will discharge. After that, output continues to stop for 10 ms (Typ) and re-starts automatically by soft start. Detection pins are VO1, VO2, VO3S, and VO4. Before each voltage startups, or are in soft start status, SCP function is masked. Over Current Protection (OCP) When over current goes through output FET, over current protection will be detected and output pulse width will be limited. For BUCK1, over current protection will be detected when the voltage between CSN and PGND1S goes more than 75 mV (Typ). For BUCK2 and BUCK3, over current protection will be detected when current goes through more than 3.0 A to integrated FET. For BOOST4, over current protection will be detected when current goes through more than 1.0 A to integrated FET. When OCP is detected continuously for more than 1 ms (Typ), switching will turn off and soft start will discharge. However, time counter is not stated until soft start of each output is completed. After turn off by OCP, output continues to stop for 10 ms (Typ) and re-starts automatically by soft start. BUCK1 OCP BUCK1 contains OCP detection function to protect FET. To prevent destruction between source and drain of high side FET, when SW1 voltage falls 0.35 V lower than VCC (Typ), high side FET keeps to turn off. OCPL2/OCPL3 These OCP watches the negative current of low side FET. This is designed to protect lower FET when output is applied from outside. If OCPL2 or OCPL3 detects, each low side FET will turn off. At the time of BUCK2 and BUCK3 startup, detection level of OCPL2/OCPL3 is at lower setting than normal operation for stable startup of the system. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 11/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Protection Function - continued Protection The value in this list is typical unless otherwise specified. Block ALL BUCK1 Protection Detect Release Detection action VCCUVLO VCC < 3.8 V VCC > 4.2 V BUCK1, BUCK2, BUCK3, BOOST4 OFF XRSTOUT = PGOOD1 = PGOOD2 = Low VREGUVLO VREG < 3.5 V VREG > 3.6 V BUCK1, BUCK2, BUCK3, BOOST4 OFF Internal OSC OFF XRSTOUT = PGOOD1 = PGOOD2 = Low TSD Tj > 175 °C - BUCK1, BUCK2, BUCK3, BOOST4 OFF After 10 ms, re-startup BUCK1 VGH = Low, VGL = Low Detected continuous 1 ms, BUCK1, BUCK2, BUCK3, BOOST4 OFF After 10 ms, re-startup Detected continuous 1 ms, BUCK1, BUCK2, BUCK3, BOOST4 OFF After 10 ms, re-startup Pulse width will be limited Detected continuous 1 ms, BUCK1, BUCK2, BUCK3, BOOST4 OFF After 10 ms, re-startup OVP1 VVO1 > 4.25 V VVO1 < 4.0 V SCP1 VVO1 < 1.65 V VVO1 > 1.815 V OCP1 VCSN - VPGND1S > 75 mV VCSN - VPGND1S < 75 mV VS2UVLO VS2 < 2.5 V VS2 > 2.7 V OVP2 VVO2 > 1.44 V VVO2 < 1.32 V SW2 Hiz Detected continuous 1 ms, BUCK2 OFF, After 10 ms, re-startup SCP2 VVO2 < 0.60 V VVO2 > 0.72 V Detected continuous 1 ms, BUCK2 OFF, After 10 ms, re-startup OCP2 IVS2 > 3.0 A (Min) IVS2 < 3.0 A (Min) Pulse width will be limited Detected continuous 1 ms, BUCK2 OFF, After 10 ms, re-startup VS3UVLO VS3 < 2.5 V VS3 > 2.7 V OVP3 VVO3S > 0.96 V VVO3S < 0.88 V SW3 Hiz Detected continuous 1 ms, BUCK3 OFF, After 10 ms, re-startup SCP3 VVO3S < 0.40 V VVO3S > 0.48 V Detected continuous 1 ms, BUCK3 OFF, After 10 ms, re-startup OCP3 IVS3 > 3.0 A (Min) IVS3 < 3.0 A (Min) Pulse width will be limited Detected continuous 1 ms, BUCK3 OFF, After 10 ms, re-startup VO4UVLO VVO4 < 1.8 V VVO4 > 2.0 V BOOST4 OFF OVP4 VVO4 > 6.5 V VVO4 < 6.25 V SW4 Hiz Detected continuous 1 ms, BOOST4 OFF, After 10 ms, re-startup SCP4 VVO4 < 2.5 V VVO4 > 3.0 V Detected continuous 1 ms, BOOST4 OFF, After 10 ms, re-startup OCP4 ISW4 > 1.0 A (Min) ISW4 < 1.0 A (Min) Pulse width will be limited Detected continuous 1 ms, BOOST4 OFF, After 10 ms, re-startup BUCK2 BUCK3 BOOST4 www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 12/50 BUCK2 OFF BUCK3 OFF TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Description of Blocks - continued 8. Watchdog Timer (WDT) Watch Dog Timer (WDT) monitors microprocessor's operation by detecting the time between rising edge of WDIN signal. When both WDEN and XRSTOUT are high, WDT is activated. If BIST result is an error, WDT will not work for XRSTOUT is kept low. As long as the period of WDIN clock is kept within "Trigger Open Window" as in Figure 6., WDT will not detect any error and XRSTOUT will stay at high. WDT Start from rising edge of WDIN Detection guaranteed WDIN WDT FAST Timeout Detection guaranteed WDT Trigger open window WDT SLOW Timeout t [ms] tWF (min) tWF (max) tWOK (typ) tWS (min) tWS (max) Figure 6. WDT Window Description www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 13/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Watchdog Timer - continued WDT FAST Timeout Detection When WDEN is low, WDT is disabled. During this period WDIN input signal is ignored and XRSTOUT output is not affected. When both WDEN and XRSTOUT are high, WDT is activated. Just after WDT is active during this first period, only SLOW Timeout detection works and FAST Timeout doesn't work. The rising edge of WDIN comes within SLOW Timeout, both FAST Timeout and SLOW Timeout detection start to work. WDT detection monitors the time between this rising edge and the next rising edge. When it detects WDIN rising edge within FAST Timeout (tWF), XRSTOUT becomes low. XRSTOUT goes back to high after 10 ms delay. Then, WDT works after 500 ms delay again. This delay time is implemented as a time for microprocessor to be reset normally and to stabilized. If this time is unnecessary and WDT should be activated as soon as possible, WDEN may be controlled from low to high. FAST Timeout Ignore Ignore OK OK OK FAST Timeout OK Ignore OK OK OK Ignore Ignore Ignore WDIN EN ON EN OFF EN ON EN OFF WDEN Ignore O.K. SLOW Timeout SLOW Timeout O.K. O.K. SLOW Timeout tWS Only SLOW Timeout is monitored for the first edge right after WDEN=H FAST Timeout FAST Timeout SLOW Timeout O.K. O.K. SLOW Timeout FAST Timeout O.K. SLOW Timeout tWF FAST Timeout tWS FAST Timeout O.K. FAST Timeout O.K. SLOW Timeout SLOW Timeout O.K. FAST Timeout SLOW Timeout O.K. SLOW Timeout tRSTL 10ms tRSTL 10ms XRSTOUT 500ms WDT function Disenable Enable Disenable 500ms Enable Disenable Enable Disenable Figure 7. WDT FAST Timeout detection www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 14/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Watchdog Timer - continued WDT SLOW Timeout Detection When WDEN is low, WDT is disabled. During this period WDIN input signal is ignored and XRSTOUT output is not affected. When both WDEN and XRSTOUT are high, WDT is activated. Just after WDT is active during this first period, only SLOW Timeout detection works and FAST Timeout doesn't work. The rising edge of WDIN comes within SLOW Timeout, both FAST Timeout and SLOW Timeout detection start to work. WDT detection monitors the time between this rising edge and the next rising edge. When it can't detect WDIN rising edge within SLOW Timeout (tWS), XRSTOUT becomes low. XRSTOUT goes back to high after 10 ms delay. Then, WDT works after 500 ms delay again. This delay time is implemented as a time for microprocessor to be reset normally and to stabilized. If this time is unnecessary and WDT should be activated as soon as possible, WDEN may be controlled from low to high. Ignore Ignore OK OK SLOW Timeout OK Ignore SLOW Timeout OK Ignore OK OK Ignore Ignore Ignore WDIN EN ON EN OFF EN ON EN OFF WDEN Ignore SLOW Timeout O.K. SLOW Timeout O.K. SLOW Timeout O.K. tWS Only SLOW Timeout is monitored for the first edge right after WDEN=H FAST Timeout O.K. FAST Timeout SLOW Timeout O.K. SLOW Timeout FAST Timeout O.K. SLOW Timeout tWF FAST Timeout tWS FAST Timeout O.K. FAST Timeout O.K. SLOW Timeout SLOW Timeout O.K. SLOW Timeout tRSTL 10ms tRSTL 10ms XRSTOUT 500ms WDT function Disenable Enable Disenable 500ms Enable Disenable Enable Disenable Figure 8. WDT SLOW Timeout Detection SLOW Timeout SLOW Timeout Ignore SLOW Timeout WDIN SLOW Timeout WDEN O.K. SLOW Timeout O.K. tWS Enable Disenable SLOW Timeout O.K. tRSTL 10ms 500ms Enable Disenable SLOW Timeout tWS tRSTL 10ms 500ms Disenable O.K. tWS tRSTL 10ms XRSTOUT WDT function SLOW Timeout tWS tRSTL 10ms 500ms Enable Disenable Enable Disenable Figure 9. XRSTOUT Behavior with Continuous WDT Timeout Detection www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 15/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C WDT SLOW timeout detection – continued The window time for detection can be changed by the resistor value between RTW and GND. Following figure shows the detection time determined by RRTW resistor value. Refer to a table of electric characteristic regarding an accuracy. Customer can choose the value ranging from 10 kΩ to 47 kΩ according to their clock frequency. The ratio for detection time is fixed and can be shown like this, FAST Timeout: SLOW Timeout = 1: 4. RRTW vs Detection Time 250 225 SLOW Timeout Detection Guaranteed Area 200 Detection Time [ms] 175 SLOW Timeout Detection Time 150 125 100 WDT OK Area 75 50 FAST Timeout Detection Time 25 FAST Timeout Detection Guaranteed Area 0 10 15 20 25 30 35 40 45 RRTW [kΩ] Figure 10. Detection time vs RRTW resistance www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 16/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Absolute Maximum Ratings Parameter Symbol Rating Unit VCC -0.3 to +42 V VS2, VS3 -0.3 to +6 V -0.3 to +42 V -0.3 to +7 V VO1 Voltage VEN1 VEN2, VEN3, VEN4 VVO1 -0.3 to +7 V VO2 Voltage VVO2 -0.3 to VREG +0.3 V FB3 Voltage VFB3 -0.3 to VREG +0.3 V VO3S Voltage VVO3S -0.3 to VREG +0.3 V VO4 Voltage VVO4 -0.3 to +7 V VPGND1S, VCSN -0.3 to +0.3 V SYNC Voltage VSYNC -0.3 to +6 V WDEN Voltage VWDEN -0.3 to +6 V VCC Voltage VS2, VS3 Voltage EN1 Voltage EN2, EN3, EN4 Voltage PGND1S, CSN Voltage WDIN Voltage SSCGEN Voltage XRSTOUT, PGOOD1, PGOOD2, XTWOUT Voltage Maximum Junction Temperature Storage Temperature Range VWDIN -0.3 to +6 V VSSCGEN VXRSTOUT VPGOOD1 VPGOOD2 VXTWOUT Tjmax -0.3 to VREG +0.3 V -0.3 to +7 V 150 °C Tstg -55 to +150 °C Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB boards with thermal resistance taken into consideration by increasing board size and copper area so as not to exceed the maximum junction temperature rating. Thermal Resistance (Note 1) Parameter Symbol Thermal Resistance (Typ) 1s (Note 3) 2s2p (Note 4) Unit VQFN40FV6060 Junction to Ambient Junction to Top Characterization Parameter (Note 2) θJA 83.7 27.0 °C/W ΨJT 8.0 4.0 °C/W (Note 1) Based on JESD51-2A (Still-Air). (Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note 3) Using a PCB board based on JESD51-3. (Note 4) Using a PCB board based on JESD51-5, 7. Layer Number of Measurement Board Single Material Board Size FR-4 114.3 mm x 76.2 mm x 1.57 mmt Top Copper Pattern Thickness Footprints and Traces 70 μm Layer Number of Measurement Board 4 Layers Material Board Size FR-4 114.3 mm x 76.2 mm x 1.6 mmt Thermal Via(Note 5) Pitch Diameter 1.20 mm Φ0.30 mm 2 Internal Layers Bottom Top Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70 μm 74.2 mm x 74.2 mm 35 μm 74.2 mm x 74.2 mm 70 μm (Note 5) This thermal via connects with the copper pattern of all layers. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 17/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Recommended Operating Conditions Parameter Symbol Min Typ Max Unit VCC 4 12 28 V Supply Voltage 2 VS2, VS3 3.0 3.3 5.5 V VO2/VO3 Output Current IVO2, IVO3 - - 2.5 (Note 7) A (Note 7) A Supply Voltage 1 (Note 6) SW4 Current ISW4 - - 1.0 SYNC Input Frequency fSYNC 1.9 2.2 2.5 MHz SYNC Input Duty Cycle DSYNC 40 50 60 % WDIN Input Frequency fWDIN 10 - 50 Hz WDIN Minimum ON Pulse/OFF Pulse tWDP - - 100 µs VO3 Output Voltage Range VVO3 0.8 - 2.5 V Operating Ambient Temperature Topr -40 +25 +125 °C (Note 6) Initial startup is over 4.5 V. (Note 7) ASO should not be exceeded Electrical Characteristics (Unless otherwise specified VCC = 12 V, VS2 = VS3 = 3.3 V, Tj = -40 °C to +150 °C) Parameter Symbol Min Typ Max Unit Conditions Standby Current 1 Ist1 - 0 10 µA VEN1 = 0 V, Tj = 25 °C Standby Current 2 Ist2 - - 50 µA Circuit Current IVCC - 5 - mA All VREG 4.6 5.0 5.4 V VEN1 = 0 V, Tj = 125 °C VEN1 = 12 V, VEN2 = VEN3 = VEN4 = 3.3 V Non-switching current IVREG = -10 mA VCC UVLO Threshold Voltage 1 VUVVCC1 3.6 3.8 4.0 V VCC voltage sweep down VCC UVLO Threshold Voltage 2 VUVVCC2 4.0 4.2 4.4 V VCC voltage sweep up VCC UVLO Hysteresis VHYSVCC - 0.4 - V VREG UVLO Threshold Voltage 1 VUVREG1 3.2 3.5 3.8 V VREG voltage sweep down VREG UVLO Threshold Voltage 2 VUVREG2 3.3 3.6 3.9 V VREG voltage sweep up VREG UVLO Hysteresis VHYSREG - 0.1 - V VREG Switch Over Voltage 1 VSWREG1 4.15 4.5 4.85 V VO4 voltage sweep up VREG Switch Over Voltage 2 VSWREG2 4.05 4.4 4.75 V VO4 voltage sweep down VREG Switch Hysteresis VHYSSW VUVVS21 VUVVS31 VUVVS22 VUVVS32 VHYSVS2 VHYSVS3 VUVVO41 - 0.1 - V 2.2 2.5 2.8 V VS2/VS3 voltage sweep down 2.4 2.7 3.0 V VS2/VS3 voltage sweep up - 0.2 - V 1.6 1.8 2.0 V VO4 voltage sweep down VO4 voltage sweep up VREG Output Voltage VS2/VS3 UVLO Threshold Voltage 1 VS2/VS3 UVLO Threshold Voltage 2 VS2/VS3 UVLO Hysteresis VO4 UVLO Threshold Voltage 1 VO4 UVLO Threshold Voltage 2 VUVVO42 1.8 2.0 2.2 V VO4 UVLO Hysteresis VHYSVO4 - 0.2 - V fOSC 1.9 2.2 2.5 MHz Switching Frequency www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 18/50 RRT = 9.1 kΩ VSSCGEN = 0 V TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Electrical Characteristics – continued (Unless otherwise specified VCC = 12 V, VS2 = VS3 = 3.3 V, Tj = -40 °C to +150 °C) Parameter Symbol Min Typ Max Unit Conditions VO1 Voltage VVO1 3.250 3.300 3.350 V Soft Start Time1 tSS1 0.75 - 3.0 ms VGH1 High Side ON Resistance RONVGH1H - 10 20 Ω IVGH1 = -10 mA VGH1 Low Side ON Resistance RONVGH1L - 1.5 4 Ω IVGH1 = +10 mA VGL1 High Side ON Resistance RONVGL1H - 10 25 Ω IVGL1 = -10 mA VGL1 Low Side ON Resistance Over Current Protection CSN Voltage OVP Detect Voltage 1 RONVGL1L - 1.5 4 Ω IVGL1 = +10 mA VCSN 60 75 90 mV VCSN – VPGND1S VOVP11 4.00 4.25 4.50 V VO1 voltage sweep up BUCK1 (Primary Buck Controller) OVP Release Voltage 1 VOVP12 - 4.00 - V VO1 voltage sweep down SCP Detect Voltage 1 VSCP11 1.485 1.650 1.815 V VO1 voltage sweep down SCP Release Voltage 1 VSCP12 - 1.815 - V VO1 voltage sweep up OVD Detect Voltage 1 VOVD1 3.365 3.415 3.465 V VO1 voltage sweep up UVD Detect Voltage 1 VUVD1 3.135 3.185 3.235 V VO1 voltage sweep down OVD/UVD Filter Time 1 tFIL1 50 75 100 µs VO1 Discharge Resistor RDIS1 - - 500 Ω VVO2 1.182 1.200 1.218 V Resistance between VO1 and PGND1 BUCK2 (Secondary Buck) VO2 Voltage Soft Start Time 2 tSS2 0.6 - 2.4 ms SW2 High Side On Resistance RON2H - 75 150 mΩ ISW2 = -50 mA SW2 Low Side On Resistance RON2L - 75 150 mΩ ISW2 = +50 mA OVP Detect Voltage 2 VOVP21 1.36 1.44 1.52 V VO2 voltage sweep up OVP Release Voltage 2 VOVP22 - 1.32 - V VO2 voltage sweep down SCP Detect Voltage 2 VSCP21 0.54 0.60 0.66 V VO2 voltage sweep down SCP Release Voltage 2 VSCP22 - 0.72 - V VO2 voltage sweep up OVD Detect Voltage 2 VOVD2 1.224 1.242 1.260 V VO2 voltage sweep up UVD Detect Voltage 2 VO2 voltage sweep down VUVD2 1.140 1.158 1.176 V OVD/UVD Filter Time 2 tFIL2 50 75 100 µs VO2 Discharge Resistor RDIS2 - - 100 Ω FB3 Voltage VFB3 0.788 0.800 0.812 V Soft Start Time 3 tSS3 0.6 - 2.4 ms RON3H - 75 150 mΩ ISW3 = -50 mA ISW3 = +50 mA Resistance between SW2 and PGND2 BUCK3 (Secondary Buck) SW3 High Side On Resistance SW3 Low Side On Resistance RON3L - 75 150 mΩ OVP Detect Voltage 3 VOVP31 0.90 0.96 1.02 V VO3S voltage sweep up OVP Release Voltage 3 VOVP32 - 0.88 - V VO3S voltage sweep down SCP Detect Voltage 3 VSCP31 0.36 0.40 0.44 V VO3S voltage sweep down SCP Release Voltage 3 VSCP32 - 0.48 - V VO3S voltage sweep up OVD Detect Voltage 3 VOVD3 0.816 0.828 0.840 V FB3 voltage sweep up UVD Detect Voltage 3 VUVD3 0.760 0.772 0.784 V FB3 voltage sweep down OVD/UVD Filter Time 3 tFIL3 50 75 100 µs VO3 Discharge Resistor RDIS3 - - 100 Ω www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 19/50 Resistance between SW3 and PGND3 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Electrical Characteristics - continued (Unless otherwise specified VCC = 12 V, VS2 = VS3 = 3.3 V, Tj = -40 °C to +150 °C) Parameter Symbol Min Typ Max Unit Conditions VO4 Voltage VVO4 4.90 5.00 5.10 V Soft Start Time of BOOST 4 tSS4 1 - 4 ms SW4 On Resistance RON4 - 200 - mΩ OVP Detect Voltage 4 VOVP41 6.0 6.5 7.0 V VO4 voltage sweep up OVP Release Voltage 4 VOVP42 - 6.25 - V VO4 voltage sweep down SCP Detect Voltage 4 VSCP41 2.25 2.50 2.75 V VO4 voltage sweep down SCP Release Voltage 4 VSCP42 - 3.00 - V VO4 voltage sweep up OVD Detect Voltage 4 VOVD4 5.150 5.325 5.500 V VO4 voltage sweep up UVD Detect Voltage 4 VUVD4 4.500 4.675 4.850 V VO4 voltage sweep down OVD/UVD Filter Time 4 tFIL4 50 75 100 µs BOOST4 (Secondary Boost) ISW4 = 50 mA Enable EN1 Low Voltage VENL1 - - 0.8 V EN1 High Voltage VENH1 2.6 - - V REN1 VENL2, VENL3, VENL4 VENH2, VENH3, VENH4 REN2/3/4 125 250 375 kΩ - - VVO1 x 0.2 V VVO1 x 0.8 - - V 50 100 150 kΩ - - VVO1 x 0.2 V EN1 Pull down Resistor EN2, EN3, EN4 Low Voltage EN2, EN3, EN4 High Voltage EN2, EN3, EN4 Pull Down Resistor VEN1 = 5 V Synchronous SYNC Low Voltage VSYNCL SYNC High Voltage VSYNCH SYNC Pull down Resistor - - V RSYNC VVO1 x 0.8 50 100 150 kΩ SSCGEN Low Voltage VSSCGENL - - VREG x 0.2 V SSCGEN High Voltage VSSCGENH SSCGEN Pull up Resistor SSCGEN - - V RSSCGEN VREG x 0.8 50 100 150 kΩ Between VREG and SSCGEN VUVVO11 2.3 2.4 2.5 V VO1 voltage sweep down V VO1 voltage sweep up RESET VO1 Power On Reset Threshold Voltage (Falling) VO1 Power On Reset Threshold Voltage (Rising) VO1 Power On Reset Hysteresis VUVVO12 2.5 2.6 2.7 VVO1HYS 0.2 - V RONRST - - XRSTOUT On Resistance 200 Ω IRSTOUT = 1 mA VRSTOUT = 5 V XRSTOUT Leak Current ILRST - - 10 µA XRSTOUT Low Hold Time tRSTL 7 10 13 ms - - 200 Ω Power Good PGOOD Leak Current ILPG - - 10 µA Power On Delay Time tPG 7 10 13 ms PGOOD1, PGOOD2 IPGOOD1, IPGOOD2 = 1 mA PGOOD1, PGOOD2 VPGOOD1, VPGOOD2 = 5 V PGOOD1, PGOOD2 RONTW - - 200 Ω IXTWOUT = 1 mA ILTW - - 10 µA VXTWOUT = 5 V PGOOD On Resistance RONPG Thermal Warning XTWOUT On Resistance XTWOUT Leak Current www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 20/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Electrical Characteristics - continued (Unless otherwise specified VCC = 12 V, VS2 = VS3 = 3.3 V, Tj = -40 °C to +150 °C) Parameter Symbol Min Typ Max Unit VWDENL - - VVO1 x 0.2 V WDEN High Level Input Voltage VWDENH VVO1 x 0.8 - - V WDEN Pull Down Resistor RWDEN 50 100 150 kΩ V V Conditions Watch Dog Timer WDEN Low Level Input Voltage VWDINL - - VVO1 x 0.2 WDIN High Level Input Voltage VWDINH VVO1 x 0.8 - - WDIN Pull Up Resistor RWDIN 50 100 150 kΩ WDT OK Time 1 tWOK1 12.5 25.5 38.5 ms RRTW = 10 kΩ WDT FAST Timeout Detect 1 tWF1 9.6 11.1 12.5 ms RRTW = 10 kΩ WDT SLOW Timeout Detect 1 tWS1 38.5 44.3 50.1 ms RRTW = 10 kΩ WDT OK Time 2 tWOK2 33.8 68.9 104.1 ms RRTW = 27 kΩ WDIN Low Level Input Voltage WDT FAST Timeout Detect 2 tWF2 26.0 29.9 33.8 ms RRTW = 27 kΩ WDT SLOW Timeout Detect 2 tWS2 104.1 119.6 135.2 ms RRTW = 27 kΩ WDT OK Time 3 tWOK3 58.8 120.0 181.1 ms RRTW = 47 kΩ WDT FAST Timeout Detect 3 tWF3 45.3 52.1 58.8 ms RRTW = 47 kΩ WDT SLOW Timeout Detect 3 tWS3 181.1 208.2 235.3 ms RRTW = 47 kΩ www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 21/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Typical Performance Curves 10 1.0 Ta = -40 °C Ta = +25 °C Ta = +125 °C 0.8 Ta = -40 °C Ta = +25 °C Ta = +125 °C 8 Circuit Current : IVCC [mA] Standby Current : IST [uA] 0.9 0.7 0.6 0.5 0.4 0.3 0.2 6 4 2 0.1 0.0 0 6 12 18 24 30 VCC Voltage : VCC [V] 36 0 42 0 6 36 42 Figure 12. Circuit Current vs VCC Voltage Figure 11. Stand-by Current vs VCC Voltage 6.0 3.35 Ta = -40 °C Ta = +25 °C Ta = +125 °C 3.34 5.0 3.33 VO1 Voltage : VVO1 [V] VREG Output Voltage : VREG [V] 12 18 24 30 VCC Voltage : VCC [V] 4.0 3.0 2.0 3.31 3.30 3.29 3.28 3.27 Ta = -40 °C Ta = +25 °C Ta = +125 °C 1.0 3.32 3.26 3.25 0.0 0.0 1.0 2.0 3.0 4.0 EN1 Pin Voltage : VEN1 [V] 5.0 Figure 13. VREG Output Voltage vs the EN1 Pin Voltage (“EN1 Threshold Voltage”) www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 4 10 16 22 28 34 VCC Voltage : VCC [V] 40 Figure 14. Output Voltage VO1 vs VCC Voltage 22/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Typical Performance Curves - continued 3.35 1.218 3.34 1.212 VO2 Voltage : VVO2 [V] VO1 Voltage : VVO1[V] 3.33 3.32 3.31 3.30 3.29 3.28 3.27 1.206 1.200 1.194 1.188 3.26 1.182 3.25 -40 -20 -40 -20 0 20 40 60 80 100 120 Temperature : Ta [°C] 0 20 40 60 80 100 120 Temperature : Ta [°C] Figure 15. Output Voltage VO1 vs Temperature (VCC = 12 V) Figure 16. Output Voltage VO2 vs Temperature 0.812 5.10 0.808 5.06 VO4 Voltage : VVO4 [V] FB3 Feedback Voltage : VFB3 [V] 5.08 0.804 0.800 0.796 5.04 5.02 5.00 4.98 4.96 4.94 0.792 4.92 4.90 0.788 -40 -20 -40 -20 0 20 40 60 80 100 120 Temperature : Ta [°C] Figure 17. Feedback Voltage FB3 vs Temperature Ta www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 0 20 40 60 80 100 120 Temperature : Ta [°C] Figure 18. Output Voltage VO4 vs Temperature Ta 23/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Typical Performance Curves - continued 1.236 3.40 3.38 1.224 VO2 Voltage : VVO2[V] VO1 Voltage : VVO1[V] 3.36 3.34 3.32 3.30 3.28 3.26 Ta = -40 °C Ta = +25 °C Ta = +125 °C 3.24 3.22 1.0 2.0 3.0 4.0 Output Current : IVO1 [A] 1.200 1.188 Ta = -40 °C Ta = +25 °C Ta = +125 °C 1.176 3.20 0.0 1.212 1.164 5.0 0.0 0.5 1.0 1.5 2.0 Output Current : IVO2 [A] 2.5 Figure 20. Output Voltage VO2 vs Output Current (“VO2 Load Regulation”, VS2 = 3.3 V) Figure 19. Output Voltage VO1 vs Output Current (“VO1 Load Regulation”, VCC = 12 V) 5.20 1.55 1.54 5.10 VO4 Voltage : VVO4[V] VO3 Voltage : VVO3[V] 1.53 1.52 1.51 1.50 1.49 1.48 1.47 5.00 4.90 Ta = -40 °C Ta = +25 °C Ta = +125 °C 1.46 Ta = -40 °C Ta = +25 °C Ta = +125 °C 1.45 0.0 0.5 1.0 1.5 2.0 Output Current : IVO3 [A] 4.80 2.5 0.0 Figure 21. Output Voltage VO3 vs Output Current (“VO3 Load Regulation”, VS3 = 3.3 V, VO3 = 1.5 V setting) www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 0.1 0.2 0.3 0.4 Output Current : IVO4 [A] 0.5 Figure 22. Output Voltage VO4 vs Output Current (“VO4 Load Regulation”, VS4 = 3.3 V) 24/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Typical Performance Curves - continued 1.26 VOVD1 VUVD1 3.45 OVD Detect Voltage 2 : VOVD2 [V] UVD Detect Voltage 2 : VUVD2 [V] OVD Detect Voltage 1 : VOVD1 [V] UVD Detect Voltage 1 : VUVD1 [V] 3.50 3.40 3.35 3.30 3.25 3.20 3.15 3.10 -40 -20 1.24 1.22 VOVD2 VUVD2 1.20 1.18 1.16 1.14 0 20 40 60 80 100 120 Temperature : Ta [°C] -40 -20 Figure 23. OVD1/UVD1 Detect Voltage vs Temperature (VCC = 12 V) 0 20 40 60 80 100 120 Temperature : Ta [°C] Figure 24. OVD2/UVD2 Detect Voltage vs Temperature (VCC = 12 V) 5.5 0.84 OVD Detect Voltage 4 : VOVD4 [V] UVD Detect Voltage 4 : VUVD4 [V] OVD Detect Voltage 3 : VOVD3 [V] UVD Detect Voltage 3 : VUVD3 [V] 5.4 0.83 0.82 VOVD3 0.81 VUVD3 0.80 0.79 0.78 5.3 5.2 VOVD4 5.1 VUVD4 5.0 4.9 4.8 4.7 0.77 4.6 0.76 -40 -20 4.5 0 20 40 60 80 100 120 Temperature : Ta [°C] -40 -20 Figure 25. OVD3/UVD3 Detect Voltage vs Temperature (VCC = 12 V) www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 0 20 40 60 80 100 120 Temperature : Ta [°C] Figure 26. OVD4/UVD4 Detect Voltage vs Temperature (VCC = 12 V) 25/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C 4.4 3.0 VS2 UVLO threshold Voltage 1 : VUVVS21 [V] VS2 UVLO threshold Voltage 2 : VUVVS22 [V] VCC UVLO threshold Voltage 1 : VUVVCC1 [V] VCC UVLO threshold Voltage 2 : VUVVCC2 [V] Typical Performance Curves - continued 4.3 4.2 4.1 4.0 3.9 3.8 VUVVCC1 (Detect) 3.7 VUVVCC2 (Release) 2.8 2.7 2.6 2.5 2.4 VUVVS21 (Detect) 2.3 VUVVS22 (Release) 2.2 3.6 -40 -20 -40 -20 0 20 40 60 80 100 120 Temperature : Ta [°C] 0 20 40 60 80 100 120 Temperature : Ta [°C] Figure 27. VCC UVLO Threshold Voltage vs Temperature (“VCC UVLO Threshold”) Figure 28. VS2 UVLO Threshold Voltage vs Temperature (“VS2 UVLO Threshold”, VCC = 12 V) 2.2 VO4 UVLO threshold Voltage 1 : VUVVO41 [V] VO4 UVLO threshold Voltage 2 : VUVVO42 [V] 3.0 VS3 UVLO threshold Voltage 1 : VUVVS31 [V] VS3 UVLO threshold Voltage 2 : VUVVS32 [V] 2.9 2.9 2.8 2.7 2.6 2.5 2.4 VUVVS31 (Detect) VUVVS32 (Release) 2.3 2.2 -40 -20 0 20 40 60 2.0 1.9 1.8 1.7 VUVVO41 (Detect) VUVVO42 (Release) 1.6 80 100 120 -40 Temperature : Ta [°C] -20 0 20 40 60 80 100 120 Temperature : Ta [°C] Figure 29. VS3 UVLO Threshold Voltage vs Temperature (“VS3 UVLO Threshold”, VCC = 12 V) www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 2.1 Figure 30. VO4 UVLO Threshold Voltage vs Temperature (“VO4 UVLO Threshold”, VCC = 12 V) 26/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Typical Performance Curves - continued 2.5 2.4 Switching Frequency : fOSC [MHz] VO1 Power On Reset Threshold Voltage(Falling):VUVVO11 [V] VO1 Power On Reset Threshold Voltage(Rising):VUVVO12 [V] 2.7 2.6 2.5 2.4 VUVVO11 VUVVO12 2.3 2.2 2.1 2.0 1.9 2.3 -40 -20 -40 0 20 40 60 80 100 120 Temperature : Ta [°C] Figure 31. VO1 Power On Reset Threshold Voltage vs Temperature (“VO1RST Threshold”, VCC = 12 V) www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 -20 0 20 40 60 80 Temperature : Ta [°C] 100 120 Figure 32. Switching Frequency vs Temperature (the SSCGEN pin = 0 V) 27/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Typical Performance Curves - continued VCC = 12 V, Ta = +25 °C VCC = 12 V, Ta = +25 °C CH1: EN1 (2 V/div) CH2: VO1 (1 V/div) CH1: EN2 (2 V/div) CH2: VO2 (0.5 V/div) Figure 33. VO1 Power On Waveform (VCC = 12 V, Ta = +25 °C) Figure 34. VO2 Power On Waveform (VCC = 12 V, VS2 = 3.3 V, Ta = +25 °C) VCC = 12 V, Ta = +25 °C VCC = 12 V, Ta = +25 °C CH1 : EN3 (2 V/div) CH2 : VO3 (0.5 V/div) CH1 : EN4 (2 V/div) CH2 : VO4 (2 V/div) Figure 35. VO3 Power On Waveform (VCC = 12 V, VS3 = 3.3 V, Ta = +25 °C) www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 36. VO4 Power On Waveform (VCC = 12 V, Ta = +25 °C) 28/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Timing Chart An example of EN1 tied to VCC, and EN2, EN3, and EN4 controlled by microcomputer. VUVV CC1 VCC EN1 VE NH 1 Int ernal circuit on VREG VUVRE G2 VUVV O12 VO1 tS S1 EN2 VUVD 2 VUVD 2 VO2 tS S2 EN3 VUVD 3 VUVD 3 VO3 tS S3 EN4 VUVD 4 VO4 VUVD 4 tS S4 tRST L XRSTOUT tP G1 PGOOD1 tP G2 PGOOD2 Battery VCC EN1 VO1 EN2 VO2 EN3 VO3 EN4 VO4 µC XRSTOUT PGOOD1 PGOOD2 Figure 37. Timing Chart1 www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 29/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Timing Chart - continued An example of EN1 tied to VCC, and EN2, EN3 and EN4 tied to VO1. VUVV CC1 VCC EN1 VE NH 1 Int ernal circuit on VREG VUVRE G2 VUVV O12 VO1 tS S1 EN2 VUVD 2 VO2 tS S2 EN3 VO3 tS S3 EN4 VUVD 4 VO4 tS S4 tRST L XRSTOUT tP G1 PGOOD1 tP G2 PGOOD2 Battery VCC EN1 VO1 EN2 VO2 EN3 VO3 EN4 VO4 XRSTOUT PGOOD1 PGOOD2 Figure 38. Timing Chart2 www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 30/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Timing Chart - continued An example of enable signals sequentially controlled. VCC EN1 Int ernal circuit on VREG VUVRE G2 VUVV O12 VUVV O1２ VO1 tS S1 EN2 VUVD 2 VUVD 2 VO2 tS S2 EN3 VUVD 3 VUVD 3 VO3 tS S3 EN4 VUVD 4 VUVD 4 tS S4 VO4 tRST L XRSTOUT tP G1 PGOOD1 tP G2 PGOOD2 Battery VCC EN1 VO1 EN2 VO2 EN3 VO3 EN4 VO4 XRSTOUT PGOOD1 PGOOD2 Figure 39. Timing Chart3 www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 31/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Timing Chart - continued An example of WDEN controlled by external signal. VO1 BIST (internal) VUVV O11 VUVV O12 tBI ST BIST OK tRSTL XRSTOUT BIST error If BIST is error, XRSTOUT is kept Low level, and WDT is not work. WDIN WDEN WDT start Pulled-down by controller and WDT works immediately after rising edge WDT function WDT Disenable WDT Enable WDT Disenable Figure 40. Timing Chart of WDEN controlled by External Signal An example of WDEN tied to VO1 VO1 BIST (internal) VUVVO11 VUVVO12 tBIST BIST OK tR STL XRSTOUT BIST error If BIST is error, XRSTOUT is kept Low level, and WDT is not work. WDIN WDEN VWDENL 500 ms (Typ) WDT works after 500 ms after XRSTOUT is High WDT function WDT Disenable WDT Enable WDT Disenable Figure 41. Timing Chart of WDEN tied to VO1 www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 32/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Timing Chart - continued BUCK1/BUCK3/BOOST4 OVD and UVD VOVDx VO1 / FB3 / VO4 VUVDx Within 75 µs (Typ) XRSTOUT H PGOOD1 H PGOOD2 H Within 75 µs (Typ) tPG 10 ms tPG 10 ms tFILx 75 µs tFILx 75µs (x = 1, 3, 4) BUCK2 OVD and UVD VO2OVD 1.2 V VO2 VO2UVD Within 75 µs (Typ) XRSTOUT H PGOOD1 H PGOOD2 Within 75 µs (Typ) tPG 10ms tPG 10 ms tFIL2 75 µs tFIL2 75 µs tPG 10ms H tFIL2 75 µs tPG 10 ms tFIL2 75 µs Figure 42. Timing Chart of OVD/UVD Detect www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 33/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Application Example VO3 0.8V～2.5V VO2 1.2V VO1 CVO2 CVO3 L3 L2 CFB3 RFB3U RFB3L GND CVS2 GND GND 30 29 28 27 26 25 24 23 22 21 VO2 PGND2 SW2 SW2 VS2 VS3 SW3 SW3 PGND3 FB3 CVS3 RVO3U RVO3L 31 EN2 VO3S 20 32 EN3 RTW 19 GND GND RRTW 33 EN4 34 WDEN 35 WDIN EXP-PAD SYNC 18 GND 17 COMP1 16 GND GND RC1 CC1 VREG 36 VO1 SSCGEN VO1 3.3V 15 GND 37 PGND1 XRSTOUT 14 CVO1 38 PGOOD1 PGND1S 13 39 PGOOD2 CSN 12 40 XTWOUT VGL1 11 VO4 VREG RT VCC EN1 BOOT1 SW1 VGH1 RRST,RPG1,RPG2,RTWO SW4 VO1 PGND4 RCS 1 2 3 4 5 6 7 8 9 10 M2 L1 CREG CVO4 RRT REN1 CB1 D4 M1 L4 GND GND GND CVCC CVCC2 CVS4 GND VCC VO1 GND VO4 5.0V www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 34/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Selection of Components Externally Connected Item Value Min (Note 1) Typ Max unit Parts No. Maker Note (Note 2) IC - - - - BD39031MUF-C ROHM REN1 9.7 10 100 kΩ MCR01 series ROHM EN1 pull up resistor RC1 32 33 34 kΩ MCR01 series ROHM VO1 compensation resistor RCS 8.7 9 15 mΩ PMR18EZPJU9L0 ROHM RFB3U 1 13 47 kΩ MCR01 series ROHM RFB3L 1 15 47 kΩ MCR01 series ROHM RVO3U 1 13 47 kΩ MCR01 series ROHM VO1 current sense resistor VO3 feedback resistor (Upper side) VO3 feedback resistor (Lower side) VO3 sense resistor (Upper side) RVO3L 1 15 47 kΩ MCR01 series ROHM RRT 8.8 9.1 9.4 kΩ MCR01 series ROHM RRTW 9.7 27 48.5 kΩ MCR01 series ROHM RRST 0.97 10 48.5 kΩ MCR01 series ROHM VO3 sense resistor (Lower side) Switching frequency setting resistor WDT detection time setting resistor XRSTOUT pull up resistor RPG1 0.97 10 48.5 kΩ MCR01 series ROHM PGOOD1 pull up resistor RPG2 0.97 10 48.5 kΩ MCR01 series ROHM PGOOD2 pull up resistor RTWO 0.97 10 48.5 kΩ MCR01 series ROHM CVCC 0.7 1 1.5 μF GCM21BR71H105MA03 Murata CVCC2 7 10 22 μF GCM32EC71H106KA03 Murata CREG 1.54 2.2 2.86 μF GCM21BR71A225MA37 Murata CB1 0.07 0.1 0.13 μF GCM188R71C104MA37 Murata CC1 840 1200 1560 pF GCM155R71H122KA37 Murata CVO1 47 x3 47 x4 47 x8 μF GCM32ER70J476ME19 Murata CVS2 1.5 2.2 4.3 μF GCM188R70J225ME22 Murata CVO2 32.9 47 122 μF GCM32ER70J476ME19 Murata CVS3 1.5 2.2 4.3 μF GCM188R70J225ME22 Murata CFB3 154 220 286 pF GCM155R71H221KA37 Murata XTWOUT pull up resistor VCC input capacitor, Range: 50 V VCC input capacitor, Range: 50 V VREG5 output capacitor, Range: 10 V VO1 boot strap capacitor, Range : 16 V VO1 phase compensation capacitor VO1 output capacitor, Range: 6.3 V VO2 input capacitor, Range: 6.3 V VO2 output capacitor, Range: 6.3 V VO3 input capacitor, Range: 6.3 V VO3 feedback capacitor CVO3 32.9 47 122 μF GCM32ER70J476ME19 Murata VO3 output capacitor: 6.3 V CVS4 1.5 2.2 4.3 μF GCM188R70J225ME22 Murata VO4 input capacitor: 6.3 V CVO4 15.4 22 43 μF GCM31CR71A226KE02 Murata VO4 output capacitor: 10 V L1 1.0 1.5 2.9 μH CLF10060NIT-1R5N-D TDK VO1 output coil L2 1.5 2.2 4.3 μH CLF5030NIT-2R2N-D TDK VO2 output coil L3 1.5 2.2 4.3 μH CLF5030NIT-2R2N-D TDK VO3 output coil L4 1.5 2.2 4.3 μH CLF5030NIT-2R2N-D TDK D4 - - - - RBR2LAM30ATF ROHM VO4 output coil VO4 SBD, Range: 30 V/2 A, VF = 0.49 V M1, M2 - - - - FDMC9430L-F085 NVMFD5C466NL ON Semiconductor Dual Nch FET, 40 V / 12 A Dual Nch FET, 40 V / 52 A (Note 1) Consider torerance, temperature characteristic and DC bias properties not to become less than the minimum. (Note 2) Consider torerance and temperature characteristic not to become less than the maximum. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 35/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Selection of Components Externally Connected - continued 1. Selection of Inductor L Value (BUCK1, BUCK2, BUCK3, BOOST4) When the switching regulator supplies current continuously to the load, the LC filter is necessary for the smoothness of the output voltage. The inductor value to use is selectable from the following. BUCK1: L1 1.5 μH, 2.2 μH BUCK2: L2 2.2 μH, 3.3 μH BUCK3: L3 2.2 μH, 3.3 μH BOOST4: L4 2.2 μH, 3.3 μH It is necessary for the rating current of the inductor to choose enough margins for the peak current. The inductor peak current of Buck converter can be approximated by the following equation. Peak current IPEAKBUCK of BUCK1, BUCK2, BUCK3 (𝑉𝐼𝑁 −𝑉𝑂𝑈𝑇 ) × 𝑉𝑂𝑈𝑇 ∆𝐼𝐿𝐵𝑈𝐶𝐾 = [A] L × 𝑓𝑆𝑊 × 𝑉𝐼𝑁 1 𝐼𝑃𝐸𝐴𝐾𝐵𝑈𝐶𝐾 = 𝐼𝑂𝑈𝑇 + 2 × ∆𝐼𝐿𝐵𝑈𝐶𝐾 Where: ∆𝐼𝐿𝐵𝑈𝐶𝐾 𝑉𝐼𝑁 𝑉𝑂𝑈𝑇 𝑓𝑆𝑊 𝐿 [A] is inductor ripple current of buck converter. is input voltage. is output voltage. is switching frequency. is inductor value. The inductor peak current of boost converter can be approximated by the following equation. Peak current IPEAKBOOST of BOOST4 ∆𝐼𝐿𝐵𝑂𝑂𝑆𝑇 = 𝐼𝐿𝐴𝑉𝐸 = 𝑉𝐼𝑁 L × 𝑓𝑆𝑊 𝐼𝑂𝑈𝑇 ×𝑉𝑂𝑈𝑇 𝑉𝐼𝑁 × 𝜂 𝑉 × (1 − 𝑉 𝐼𝑁 ) 𝑂𝑈𝑇 𝑉 × (1 − 𝑉 𝐼𝑁 ) 𝑂𝑈𝑇 1 𝐼𝑃𝐸𝐴𝐾𝐵𝑂𝑂𝑆𝑇 = 𝐼𝐿𝐴𝑉𝐸 + 2 × ∆𝐼𝐿𝐵𝑂𝑂𝑆𝑇 Where: ∆𝐼𝐿𝐵𝑂𝑂𝑆𝑇 𝐼𝐿𝐴𝑉𝐸 𝑉𝐼𝑁 𝑉𝑂𝑈𝑇 𝐼𝑂𝑈𝑇 𝑓𝑆𝑊 𝐿 𝜂 [A] [A] [A] is inductor ripple current of boost converter. is average current of boost converter. is input voltage. is output voltage. is output current. is switching frequency. is inductor value. is efficiency. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 36/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Selection of Components Externally Connected – continued 2. Selection of Output Capacitor Value (CVO1, CVO2, CVO3, CVO4) The output capacitor is selected on the basis of ESR that is required from the ripple voltage can be reduced by using a capacitor with a small ESR. The ceramic capacitor is the best option that meets this requirement. The ceramic capacitor contributes to the size reduction of the application for it has small ESR. Frequency characteristic of ESR should be confirmed from the datasheet of the manufacturer to choose low ESR value in the switching frequency being used. It is necessary to consider the ceramic capacitor because the DC biasing characteristic is remarkable. For the voltage rating of the ceramic capacitor, twice or more the maximum output voltage is usually required. By selecting these high voltages rating, it is possible to reduce the influence of DC bias characteristics. Moreover, in order to maintain good temperature characteristics, the one with the characteristic of X7R or more is recommended. Because the voltage rating of a mass ceramic capacitor is low, the selection becomes difficult in the application with high output voltage. In that case, it is recommended to connect ceramic capacitors in parallel, or to use hybrid electrolytic capacitor. The value of output capacitor to use is selectable in the following. BUCK1: CVO1 47 μF x4 to 47 μF x6 BUCK2: CVO2 47 μF to 94 μF BUCK3: CVO3 47 μF to 94 μF BOOST4: CVO4 22 μH to 33 μF These capacitors are rated in ripple current. The RMS values of the ripple current that can be obtained from the following equation must not exceed the ripple current ratings. 𝐼𝐶𝑂𝐵𝑈𝐶𝐾(𝑅𝑀𝑆) = ∆𝐼𝐿𝐵𝑈𝐶𝐾 √12 Where: 𝐼𝐶𝑂𝐵𝑈𝐶𝐾(𝑅𝑀𝑆) ∆𝐼𝐿𝐵𝑈𝐶𝐾 𝐷𝐵𝑂𝑂𝑆𝑇 = (1 − [A] is RMS value of the buck converter output ripple current. is ripple current of buck converter. 𝑉𝐼𝑁 ) 𝑉𝑂𝑈𝑇 𝐷 2 𝐼𝐶𝑂𝐵𝑂𝑂𝑆𝑇(𝑅𝑀𝑆) = √(1 − 𝐷𝐵𝑂𝑂𝑆𝑇 ) × (𝐼𝑂𝑈𝑇 × (1−𝐷𝐵𝑂𝑂𝑆𝑇 𝐵𝑂𝑂𝑆𝑇 )2 + 𝛥𝐼𝐿𝐵𝑂𝑂𝑆𝑇 2 3 ) [A] Where: 𝐼𝐶𝑂𝐵𝑂𝑂𝑆𝑇(𝑅𝑀𝑆) is RMS value of the boost converter output ripple current. 𝐷𝐵𝑂𝑂𝑆𝑇 is duty cycle of boost converter. 𝑉𝐼𝑁 is input voltage. 𝑉𝑂𝑈𝑇 is output Voltage. 𝐼𝑂𝑈𝑇 is output current. ∆𝐼𝐿𝐵𝑂𝑂𝑆𝑇 is inductor ripple current of boost converter. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 37/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Selection of Components Externally Connected – continued 3. Selection of Input Capacitor (CVCC, CVCC2, CVS2, CVS3, CVS4) The Input capacitor is required to stabilize ripple voltage of the supplied power supply and is necessary to supply current in the on time for FET. The ceramic capacitor with low ESR is necessary for input capacitor. The CVCC has to be connected near the IC for the stabilization of the power supplied to the analog block of the IC. The value of input capacitor to use is selectable from the following ranges. VCC : CVCC 1.0 μF BUCK1 : CVCC2 10 μF BUCK2 : CVS2 2.2 μF to 3.3μF BUCK3 : CVS3 2.2 μF to 3.3μF BOOST4 : CVS4 2.2 μF to 3.3μF These capacitors are rated in ripple current. The RMS values of the ripple current that can be obtained in the following equation must not exceed the ripple current ratings. The RMS value of the input ripple electric current is obtained in the following equation. 𝐼𝐶𝐶𝐵𝑈𝐶𝐾(𝑅𝑀𝑆) = 𝐼𝑂1(𝑀𝐴𝑋) × √𝐷𝐵𝑈𝐶𝐾 × (1 − 𝐷𝐵𝑈𝐶𝐾 ) [A] Where: 𝐼𝐶𝐶𝐵𝑈𝐶𝐾(𝑅𝑀𝑆) is RMS value of the VCC input current. 𝐼𝑂1(𝑀𝐴𝑋) is max output current. 𝐷𝐵𝑈𝐶𝐾 is duty cycle of buck converter. The RMS value of the input ripple current is obtained in the following equation. 𝐼𝐶𝐶𝐵𝑂𝑂𝑆𝑇(𝑅𝑀𝑆) = Where: 𝐼𝐶𝐶𝐵𝑂𝑂𝑆𝑇(𝑅𝑀𝑆) ∆𝐼𝐿𝐵𝑂𝑂𝑆𝑇 𝑉𝐼𝑁 𝑉𝑂𝑈𝑇 𝑓𝑆𝑊 ∆𝐼𝐿𝐵𝑂𝑂𝑆𝑇 √12 = 1 √ 𝑉 × 𝐿× 𝑓𝐼𝑁 12 𝑆𝑊 𝑉 × (1 − 𝑉 𝐼𝑁 ) 𝑂𝑈𝑇 [A] is RMS value of the VCC input ripple electric current. is ripple current of boost. is input voltage. is output Voltage. is switching frequency. In addition, in automotive and other applications requiring high reliability, it is recommended by making it into two series + two parallel structures to decrease the risk of ceramic capacitor destruction due to short circuit conditions. “Two series + two parallel structure in 1 package” lineups are respectively carried out by each capacitor supplier, confirm to each supplier for details. When impedance on the input side is high because of long wiring from the power supply to VCC etc., high capacitance is needed. It is necessary to verify IC operation in actual condition for problem such as output turning off or output overshooting causes by change in VCC at transient response may occur. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 38/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Selection of Components Externally Connected - continued 4. FET (M1, M2) The selection of MOSFET affects the efficiency of BUCK1. This product recommends the following MOSFET. Parts No. Maker Channel Pole VDS ID FDMC9430L-F085 ON Semiconductor Dual N-Channel 40 V 12 A NVMFD5C466NL ON Semiconductor Dual N-Channel 40 V 52 A In the selection of MOSFET, please give enough consideration for following contents. Drain – Source Rating Gate – Source Rating Drain Current Power Dissipation Drain – Source Rating It is recommended to select MOSFET with enough margins to be used for power supply range (VCC). Gate - Source Rating It is recommended to use MOSFET with more than 10 V of gate source rating. Drain Current Choose FET with more than the setting of either I PEAKBUCK or OCP for drain current. Power Dissipation Power consumption is calculated on a true specifications condition, and prevents from exceeding maximum allowable power consumption. Synchronization can roughly estimate the loss of commutation type MOSFET by the factor shown below. (1) (2) (3) (4) (5) Loss of MOSFET ON Resistance Loss of Switching Loss of Output Capacitor Loss of Dead Time Loss of Gate Charge tr-H tON tOFF tf-H RON-H×IOUT VIN VSW 0 VD tr-L tf-L tDf RON-L×IOUT tDr IP(PEAK) IL(AVERAGE) ΔIL IV(VALLEY) t Figure 43. Relation between Switching Waveform and Loss www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 39/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C FET (M1, M2) - continued (1) Loss of MOSFET ON Resistance The conduction loss of the MOSFET is calculated in A section and B section of Figure 43. High side MOSFET turns on the A section and turns off low side MOSFET, and it can be roughly estimated by output current, ON resistance, and on duty cycle. High side MOSFET turns off the B section and low side MOSFET becomes ON, and it can be roughly estimated from output current, ON resistance and off duty cycle. Power loss PON-H and PON-L are calculated by the following formula. High side MOSFET 2 𝑃𝑂𝑁−𝐻 = [𝐼𝑂𝑈𝑇 + 𝛥𝐼𝐿 2 12 ] × 𝑅𝑂𝑁−𝐻 × 𝑉𝑂𝑈𝑇 [W] 𝑉𝐼𝑁 Low Side MOSFET 2 𝑃𝑂𝑁−𝐿 = [𝐼𝑂𝑈𝑇 + 𝛥𝐼𝐿 = Where: (𝑉𝐼𝑁 −𝑉𝑂𝑈𝑇 ) 𝑓𝑆𝑊 ×𝐿 𝐼𝑂𝑈𝑇 𝑅𝑂𝑁−𝐻 𝑅𝑂𝑁−𝐿 𝑉𝐼𝑁 𝑉𝑂𝑈𝑇 𝛥𝐼𝐿 𝑓𝑆𝑊 𝐿 𝛥𝐼𝐿 2 12 × ] × 𝑅𝑂𝑁−𝐿 × (1 − 𝑉𝑂𝑈𝑇 𝑉𝐼𝑁 𝑉𝑂𝑈𝑇 𝑉𝐼𝑁 ) [W] [A] is output current. is on resistance of high side MOSFET. is on resistance of low side MOSFET. is input voltage. is output voltage. is inductor ripple current of inductor. is switching frequency. is Inductor value. (2) Loss of Switching The switching loss can be calculated by C, D, E, and F section of Figure 43. When a high side and low side MOSFET switches ON/OFF in turn, a loss occurs during the transition to ON. Because the formula for two triangular areas resembles a calculating formula of the power attenuation during a start and fall transition, this calculation can be approximated by a simple figure calculation. Switching loss PSW-H is demanded by following formula. High side MOSFET 𝑃𝑆𝑊−𝐻 = Where: 𝑉𝐼𝑁 𝐼𝑂𝑈𝑇 𝑡𝑟−𝐻 𝑡𝑓−𝐻 𝑓𝑆𝑊 1 2 × 𝑉𝐼𝑁 × 𝐼𝑂𝑈𝑇 × (𝑡𝑟−𝐻 + 𝑡𝑓−𝐻 ) × 𝑓𝑆𝑊 [W] is input voltage. is output current. is rise time of MOSFET. is fall time of MOSFET. is switching frequency. When low side MOSFET turns on by gate voltage which electricity runs through body diode and then turns off by gate voltage, drain voltage becomes equal to forward direction voltage of body diode and remains as low voltage, because load current flows in same direction through body diode. Therefore, switching loss PSW-L is very few like in following formula. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 40/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C loss of Switching - continued Low side MOSFET 1 𝑃𝑆𝑊−𝐿 = 2 × 𝑉𝐷 × 𝐼𝑂𝑈𝑇 × (𝑡𝑟−𝐿 + 𝑡𝑓−𝐿 ) × 𝑓𝑆𝑊 Where: 𝑉𝐷 𝐼𝑂𝑈𝑇 𝑡𝑟−𝐿 𝑡𝑓−𝐿 𝑓𝑆𝑊 [W] is forward voltage of body diode of low side MOSFET. is output current. is rise time of MOSFET. is fall time of MOSFET. is switching frequency. (3) Loss of Output Capacitor A loss occurs when charging output capacitance COSS of high side and low side MOSFET in each switching cycle. This loss is demanded by following formula. 1 𝑃𝐶𝑂𝑆𝑆 = 2 × (𝐶𝑂𝑆𝑆−𝐿 + 𝐶𝑂𝑆𝑆−𝐻 ) × 𝑉𝐼𝑁2 × 𝑓𝑆𝑊 𝐶𝑂𝑆𝑆−𝐿 = 𝐶𝐷𝑆−𝐿 + 𝐶𝐺𝐷−𝐿 [F] 𝐶𝑂𝑆𝑆−𝐻 = 𝐶𝐷𝑆−𝐻 + 𝐶𝐺𝐷−𝐻 [F] Where: 𝐶𝑂𝑆𝑆−𝐿 𝐶𝐷𝑆−𝐿 𝐶𝐺𝐷−𝐿 𝐶𝑂𝑆𝑆−𝐻 𝐶𝐷𝑆−𝐻 𝐶𝐺𝐷−𝐻 𝑉𝐼𝑁 𝑓𝑆𝑊 [W] is output capacitance of low side MOSFET. is capacitance between drain and source of low side MOSFET. is capacitance between gate and drain of low side MOSFET. is output capacitance of high side MOSFET. is capacitance between drain and source of high side MOSFET. is capacitance between gate and drain of high side MOSFET. is input voltage. is switching frequency. CGD-H VCC D High-side MOSFET RON-H CDS-H G S CGS-H Controller CGD-L D CDS-L G S CGS-L Low-side MOSFET RON-L Body-Diode VD Figure 44. Synchronized Rectifier type DCDC Converter Circuit Diagram www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 41/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C FET (M1, M2) - continued (4) Loss of Dead Time When a high side and low side MOSFET are turned on at the same time, VIN-GND interval shorts circuit and a very big current spike will occur. The dead time which turns off both MOSFET is made to prevent this, but the inductor electric current flows continuously. This inductor electric current flows in a body diode of low side MOSFET during dead time. Dead time loss PD is calculated in G section and H section of Figure 43 and is demanded by the following formula. 𝑃𝐷 = 𝑉𝐷 × 𝐼𝑂𝑈𝑇 × (𝑡𝐷𝑟 + 𝑡𝐷𝑓 ) × 𝑓𝑆𝑊 [W] Where: (5) 𝑉𝐷 𝐼𝑂𝑈𝑇 𝑡𝐷𝑟 𝑡𝐷𝑓 𝑓𝑆𝑊 is forward voltage of body diode of low side MOSFET. is output current. is dead time at rise. is dead time at fall. is switching frequency. Loss of Gate Charge A gate charge loss is power attenuation due to the charge of the gate of MOSFET. Depending on quantity of gate charge of a high side and the low side MOSFET (or gate capacitance), the gate charge loss is demanded by following formula. 𝑃𝐺 = (𝑄𝑔−𝐻 + 𝑄𝑔−𝐿 ) × 𝑉𝑔𝑠 × 𝑓𝑆𝑊 [W] or 𝑃𝐺 = (𝐶𝐺𝑆−𝐻 + 𝐶𝐺𝑆−𝐿 ) × 𝑉𝑔𝑠2 × 𝑓𝑆𝑊 [W] Where: 𝑄𝑔−𝐻 𝑄𝑔−𝐿 𝐶𝐺𝑆−𝐻 𝐶𝐺𝑆−𝐿 𝑉𝑔𝑠 𝑓𝑆𝑊 is gate charge of high side MOSFET. is gate charge of low side MOSFET. is capacitance between gate and source of high side MOSFET. is capacitance between gate and source of low side MOSFET. is gate drive voltage. is switching frequency. All power loss of the MOSFET Power loss P of the MOSFET is the value that added all these. 𝑃 = 𝑃𝑂𝑁−𝐻 + 𝑃𝑂𝑁−𝐿 + 𝑃𝑆𝑊−𝐻 + 𝑃𝑆𝑊−𝐿 + 𝑃𝐶𝑂𝑆𝑆 + 𝑃𝐷 + 𝑃𝐺 [W] Where: 𝑃𝑂𝑁−𝐻 𝑃𝑂𝑁−𝐿 𝑃𝑆𝑊−𝐻 𝑃𝑆𝑊−𝐿 𝑃𝐶𝑂𝑆𝑆 𝑃𝐷 𝑃𝐺 is high side MOSFET on resistance loss. is low side MOSFET on resistance loss. is high side MOSFET switching loss. is low side MOSFET switching loss. is MOSFET output capacitance loss. is dead time loss. is gate charge loss. 5. BOOT1 Capacitor (CB1) CB1 is a capacitor between BOOT1 and SW1. The voltage between BOOT1 and SW1 will be almost the same as voltage between VREG and GND. Ceramic capacitor with capacity of 0.1 μF is recommended for capacitor CB1. Moreover, in order to maintain good temperature characteristics, capacitor with a characteristic of X7R or more is recommended. 6. VREG Capacitor (CREG) CREG is a capacitor between VREG and internal block. Ceramic capacitor with capacity of 2.2 μF is recommended for the VREG pin. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 42/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Selection of Components Externally Connected - continued 7. Switching Frequency Setting Resistor (RRT) RRT is a resistor to set switching frequency of BUCK1, BUCK2, BUCK3, and BOOST4. The resistor value is 9.1 kΩ. 8. WDT Timeout Setting Resistor (RRTW) RRTW is a resistor to set timeout of Watch Dog Timer. The range of RRTW is from 10 kΩ to 47 kΩ. Details for setting RRTW is describe in page 15. 9. Current Detection Resistor of BUCK1 (RCS) The RCS resistor sets the level of the over current protection of BUCK1. The level of the over current protection is decided in an expression below. 𝐼𝑂𝐶𝑃 = 75𝑚𝑉(𝑇𝑦𝑝) [A] 𝑅𝐶𝑆 Because high current flows in RCS, the resistor with enough margin must be selected for rating current and allowable power. It is recommended to use resistor of PMR series for current detection resistor. 10. Pull-up Resistor for Open Drain Output (RRST, RPG1, RPG2, RTWO) The XRSTOUT, PGOOD1, PGOOD2, and XTWOUT pins are the N-channel open drain output. These pins are used to pull-up resistor to VO1 or to other power supplies. The range of resistor value is 1 kΩ to 47 kΩ. 11. Selection of Schottky Barrier Diode (SBD) (D4) It is necessary to use Schottky barrier diode to realize high efficiency. Please select suitable Schottky barrier diode considering the following contents enough. The maximum rating of reverse voltage must have enough margin against maximum output voltage of VO4. In additional, current rating of SBD is necessary for peak forward current I DPEAK. Peak forward current IDPEAK is defined by following expression. 𝐼 𝐼𝐷𝑃𝐸𝐴𝐾 = (1−𝐷𝑂𝑈𝑇 𝐵𝑂𝑂𝑆𝑇 ) Where: 𝐼𝑂𝑈𝑇 𝐷𝐵𝑂𝑂𝑆𝑇 𝛥𝐼𝐿𝐵𝑂𝑂𝑆𝑇 𝑉𝐼𝑁 𝑉𝑂𝑈𝑇 + ∆𝐼𝐿𝐵𝑂𝑂𝑆𝑇 2 = 𝐼𝑂𝑈𝑇 (1−𝐷𝐵𝑂𝑂𝑆𝑇 ) + 1 2 𝑉 × [L × 𝐼𝑁 𝑓 𝑆𝑊 𝑉 × (1 − 𝑉 𝐼𝑁 )] [A] 𝑂𝑈𝑇 is output current. is duty cycle of boost converter. is inductor ripple current. is input voltage. (= VO1 voltage) is output voltage. The forward average rectify current is equal to output current IOUT The power loss of SBD can be approximated by the following equation. 𝑃𝐷𝐼𝑂𝐷𝐸 = 𝐼𝑂𝑈𝑇 × 𝑉𝐹 × Where: 𝑃𝐷𝐼𝑂𝐷𝐸 𝐼𝑂𝑈𝑇 𝑉𝐹 𝑉𝐼𝑁 𝑉𝑂𝑈𝑇 𝑉𝐼𝑁 𝑉𝑂𝑈𝑇 [W] is power loss of SBD. is output current. is forward voltage of SBD. is input voltage. (= VO1 voltage) is output voltage. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 43/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Selection of Components Externally Connected - continued 12. Phase Compensation (BUCK1) High response characteristic can be achieved by setting total gain zero cross frequency f C (Gain 0 dB frequency) high. However, give consideration that responsiveness and the stability are in relation of trade-off. Switching regulator application are sampled by switching frequency. In order to sustain gain at switching frequency, zero cross frequency should be set lower than 1/2 to 1/10 of the switching frequency. In general, the characteristics which application design must target are; 150˚ or less (phase margin 30˚ or more) phase delay at Gain 1 (0 dB) Zero cross frequency to be lower than 1/2 to 1/10 of the switching frequency. To increase the response characteristic, zero cross frequency must be higher. BUCK1 phase compensation is set by capacitor and resistor between the COMP1 pin and Ground. (BUCK2, BUCK3, and BOOST4 have phase compensation network of built-in COMP pins. No need for adjustment.) Following values are the recommend value of phase compensation of BUCK1. RC1 33 kΩ CC1 1200 pF Actual behavior will vary by several factors such as PCB layout, wiring, components, and usage condition (temp). It is necessary to verify the stability and response characteristic on the actual application. For frequency characteristic confirmation, gain phase analyzer or FRA will be used. Measurement method shall be checked with measurement equipment manufacturer. 13. VO3 Output Voltage Setting (BUCK3) Output of VO3 can be calculated by following equation. 𝑉𝑂3 = 0.8 𝑉 (𝑇𝑦𝑝) × 𝑅𝐹𝐵3𝑈 +𝑅𝐹𝐵3𝑈 𝑅𝐹𝐵3𝐿 [V] Output of VO1, VO2 and VO4 are fixed voltage. VO3 CFB3 RFB3U FB3 RFB3L VREF Figure 45. FB3 Feedback Circuit Feedback resistor RFB3L shall be set to 47 kΩ or less. Also low RFB3U+ RFB3L reduces efficiency, therefore set values that current through feedback resistor will be sufficiently lower than output current IOUT. The resistor recommended for output voltage setting must have high accuracy resistor of less than 1 %. The resistor is connected near this IC, and is located so it is not affected by the noise of the SW1 pin. Also, CFB3 is connected 220 pF to stabilize control system. RVO3U and RVO3L resistor connected to the VO3S pin sets the overvoltage detection level of BUCK3. The reason of separating pin is to protect IC with overvoltage detection from an error which may occur when the FB3 pin shorts GND. The resistor value of RVO3U, RVO3L are the same as RFB3U, RFB3L. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 44/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Selection of Components Externally Connected - continued 14. Selection of EN1 Resistor When an alien substance causes short between pins, the EN1 pin may short-circuit with the VCC pin. In this case, the external components may exceed rating. When a countermeasure is necessary for above mentioned cases, insert resistance in the EN pin as shown in the following figure. The resistance value is 400 kΩ or less. VCC CVCC1 EN1 control 6 VCC 7 EN1 short Figure 46. The EN1 Pin Resistor www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 45/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Operational Notes 1. Reverse Connection of Power Supply Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply pins. 2. Power Supply Lines Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. Ground Voltage Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. Except for pins the output and the input of which were designed to go below ground, ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. 4. Ground Wiring Pattern When using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance. 5. Recommended Operating Conditions The function and operation of the IC are guaranteed within the range specified by the recommended operating conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical characteristics. 6. Inrush Current When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections. 7. Testing on Application Boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. 8. Inter-pin Short and Mounting Errors Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few. 9. Unused Input Pins Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power supply or ground line. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 46/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Operational Notes - continued 10. Regarding the Input Pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Resistor Transistor (NPN) Pin A Pin B C E Pin A N P+ P N N P+ N Pin B B Parasitic Elements N P+ N P N P+ B N C E Parasitic Elements P Substrate P Substrate GND GND Parasitic Elements GND Parasitic Elements GND N Region close-by Figure 47. Example of Monolithic IC Structure 11. Ceramic Capacitor When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others. 12. Thermal Shutdown Circuit(TSD) This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage. 13. Over Current Protection Circuit (OCP) This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should not be used in applications characterized by continuous operation or transitioning of the protection circuit. 14. Functional Safety “ISO 26262 Process Compliant to Support ASIL-*” A product that has been developed based on an ISO 26262 design process compliant to the ASIL level described in the datasheet. “Safety Mechanism is Implemented to Support Functional Safety (ASIL-*)” A product that has implemented safety mechanism to meet ASIL level requirements described in the datasheet. “Functional Safety Supportive Automotive Products” A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the functional safety. Note: “ASIL-*” is stands for the ratings of “ASIL-A”, “-B”, “-C” or “-D” specified by each product's datasheet. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 47/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Ordering Information B D 3 9 0 3 Part Number 1 M U F - Package MUF: VQFN40FV6060 CE 2 Product Rank C: for Automotive Packaging and forming specification E2: Embossed tape and reel Marking Diagrams VQFN40FV6060 (TOP VIEW) Part Number Marking BD39031 LOT Number Pin 1 Mark www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 48/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Physical Dimension and Packing Information Package Name www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 VQFN40FV6060 49/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 BD39031MUF-C Revision History Date Revision 05.Mar.2020 001 Changes New Release www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 50/50 TSZ02201-0A2A0AP00440-1-2 05.Mar.2020 Rev.001 Notice Precaution on using ROHM Products 1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used. However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software). 3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Datasheet General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001