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BD39040MUF-CE2

BD39040MUF-CE2

  • 厂商:

    ROHM(罗姆)

  • 封装:

    VQFN16FV3030

  • 描述:

    BD39040MUF-CE2

  • 数据手册
  • 价格&库存
BD39040MUF-CE2 数据手册
Datasheet Supervisor IC System Power Good + Watchdog Timer + Reset for Automotive BD39040MUF-C General Description Key Specifications  BD39040MUF-C is a supervisor IC with quad power good, Watchdog timer and reset. This IC enables existing system to improve its ASIL level easily. The BD39040MUF-C includes built-in self-test (BIST). VDD Input Voltage Range: 2.7 V to 5.5 V (VDD voltage level needs to be fixed within this range in 10% accuracy to avoid RSTIN reset detection)  Detection Voltage (VDD POR/Power Good) Under Voltage Detection: -10 % (3 % accuracy) Over Voltage Detection: +10 % (3 % accuracy) Reset Off Time: 10 ms  Operating Temperature Range: -40 °C to +125 °C Features        AEC-Q100 Qualified(Note 1) Quad Power Good for External Inputs Over Voltage Detection (OVD) Under Voltage Detection (UVD) Adjustable Window Watchdog Timer(WDT) Reset for VDD Input (POR) Built-in Self-test (BIST) Special Characteristics  Reference Voltage Accuracy Under Voltage Detection: Over Voltage Detection: ±3.0 % ±3.0 % (Note 1) Grade 1 Applications      Package Automotive for ADAS Camera Module Microwave Module Power Train ECU Other ECU VQFN16FV3030 W (Typ) x D (Typ) x H (Max) 3.00 mm x 3.00 mm x 1.00 mm Close-up VQFN16FV3030 Wettable Flank Package Typical Application Circuit Battery VO1 RSTIN VDD XRSTOUT VO2 DIN1 PG1 DIN2 PG2 VO3 PMIC/ Discrete DCDC VO4 DIN3 BD39040MUF-C PG3 Processor VO5 DIN4 PG4 WDIN WDEN RTW GND 〇Product structure : Silicon integrated circuit www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 WDOUT 〇This product has no designed protection against radioactive rays 1/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 BD39040MUF-C Contents General Description ................................................................................................................................................................ 1 Features ................................................................................................................................................................................. 1 Applications ............................................................................................................................................................................ 1 Key Specifications................................................................................................................................................................... 1 Special Characteristics ............................................................................................................................................................ 1 Package ............................................................................................................................................................................. 1 Typical Application Circuit ........................................................................................................................................................ 1 Pin Configuration .................................................................................................................................................................... 3 Pin Descriptions ...................................................................................................................................................................... 3 Block Diagram ........................................................................................................................................................................ 4 Absolute Maximum Ratings ..................................................................................................................................................... 9 Thermal Resistance ................................................................................................................................................................ 9 Recommended Operating Conditions ...................................................................................................................................... 9 Electrical Characteristics ..................................................................................................................................................... 10 Typical Performance Curves .................................................................................................................................................. 12 Timing Chart ......................................................................................................................................................................... 16 Application Example.............................................................................................................................................................. 20 Operational Notes ................................................................................................................................................................. 22 Ordering Information ............................................................................................................................................................. 24 Marking Diagram................................................................................................................................................................... 24 Physical Dimension and Packing Information ......................................................................................................................... 25 Revision History .................................................................................................................................................................... 26 www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 2/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 BD39040MUF-C Pin Configuration (TOP View) DIN3 14 PG3 WDIN DIN4 13 PG4 WDEN 12 11 10 9 8 PG2 7 DIN2 EXP-PAD XRSTOUT 15 6 PG1 WDOUT 16 5 DIN1 RSTIN 3 GND 4 RTW 5 DIN1 6 PG1 7 DIN2 8 PG2 9 DIN3 10 PG3 11 DIN4 12 PG4 13 14 WDEN WDIN 15 XRSTOUT 16 WDOUT - EXP-PAD www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 4 RTW 2 3 GND Pin Name VDD RSTIN Pin No. 1 2 VDD Pin Descriptions 1 Function IC’s Power Source The VDD pin voltage divided by external resistor input pin. Nominal voltage level needs to be 0.8 V. IC’s Power Ground WDT frequency setting pin. FAST Timeout and SLOW Timeout is adjusted by the resistor value for this pin. Voltage for monitoring channel divided by external resistor input pin. Nominal voltage level needs to be 0.8 V. POWER GOOD output pin for the DIN1 pin, and Nch Open Drain output. Hi-Z for assertion, and Low for de-assertion is its value. Please be pulled-up by external resistor. It can be pulled-up to any voltage source. Voltage for monitoring channel divided by external resistor input pin. Nominal voltage level needs to be 0.8 V. POWER GOOD output pin for the DIN2 pin, and Nch Open Drain output. Hi-Z for assertion, and Low for de-assertion is its value. Please be pulled-up by external resistor. It can be pulled-up to any voltage source. Voltage for monitoring channel divided by external resistor input pin. Nominal voltage level needs to be 0.8 V. POWER GOOD output pin for the DIN3 pin, and Nch Open Drain output. Hi-Z for assertion, and Low for de-assertion is its value. Please be pulled-up by external resistor. It can be pulled-up to any voltage source. Voltage for monitoring channel divided by external resistor input pin. Nominal voltage level needs to be 0.8 V. POWER GOOD output pin for the DIN4 pin, and Nch Open Drain output. Hi-Z for assertion, and Low for de-assertion is its value. Please be pulled-up by external resistor. It can be pulled-up to any voltage source. Enable pin for WDT. High=Active, Low=Disable and WDT error is ignored. Clock input pin for WDT Reset output pin. Nch Open Drain output. Hi-Z for normal, and Low for abnormal (reset) is its value. Please be pulled-up by external resistor. It can be pulled-up to any voltage source. Either error of OVD, UVD for RSTIN, reference voltage monitoring, internal OSC monitoring, WDT and BIST at power-up sequence causes this pin to drive low. Buffer output pin for the WDEN pin input. Abnormal Power Source / the GND pin shortage for the WDEN pin can be recognized by monitoring this pin. This pin becomes Low when the XRSTOUT pin is low. The EXP-PAD is connected to the PCB Ground plane. 3/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 BD39040MUF-C Block Diagram VDD VREF VREF_DET VREF_DET VREF_SUB VREF_DET RSTIN_DET BIST_ERROR WDT_DET CLK_DET WDT_OSC_DET BIST_EN UVLO UVLO RSTIN OVD + XRSTOUT XRSTOUT_DET OVD_RST - RSTIN_DET BIST_EN Filter Counter UVD - UVD_RST + VREF_DET BIST_ERROR OVD_RST BIST_EN UVD_RST DIN1 VREF BIST OVD1,OVD2, OVD3,OVD4 OVD2 OVD + BIST_EN UVD1,UVD2, UVD3,UVD4 OVD1 - VREF_DET BIST_EN Filter PG1 Counter UVD - UVD1 + BIST_EN DIN2 VREF OVD + OVD2 - VREF_DET BIST_EN Filter PG2 Counter UVD - UVD2 DIGITAL + BIST_EN DIN3 VREF OVD + OVD3 - PG3 VREF_DET BIST_EN Filter Counter UVD - UVD3 + BIST_EN DIN4 VREF OVD + OVD4 - PG4 VREF_DET BIST_EN UVD Filter Counter UVD4 + BIST_EN DIGITAL_OSC CLK_DET CLK_DET RTW WDT_OSC WDT_OSC_DET WDT_DET WDIN WDT VDD XRSTOUT_DET WDEN WDOUT Counter UVLO www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 4/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 BD39040MUF-C Block Diagrams - continued Description of Blocks Reference Voltage (VREF) VREF is used for the reference voltage of monitoring each input voltage. Reference Voltage (VREF_SUB) VREF_SUB is used for the reference voltage of mutual monitoring VREF. Reference Voltage (VREF_DET) This is monitoring the 2 reference voltage, VREF and VREF_SUB. This block contributes to the higher reliability by continuous, mutual monitoring each other if it turns on correctly. Occurrence of error leads to Low output at the XRSTOUT pin and which is never de-asserted as long as abnormal status lasts. It becomes High at 10 ms (Typ) after the voltage returned to the normal range. Under Voltage Lockout Circuit (UVLO) Protection circuit to prevent internal circuit from malfunction at lower voltage (Power-up sequence or input power supply drop). This is monitoring the VDD pin voltage and UVLO works when it goes down to threshold level. As UVLO is detected, the XRSTOUT, WDOUT, PG1, PG2, PG3 and PG4 pins output Low. Also Counter value in DIGITAL BLOCK is initialized and DIGITAL_OSC/WDT_OSC stop working. Oscillator (DIGITAL_OSC) This OSC generates the clock to control DIGITAL BLOCK. The frequency of DIGITAL_OSC is fixed at 2.2 MHz Oscillator (WDT_OSC) This OSC generates the clock to control WDT. The frequency of WDT_OSC is possible to be adjusted by the resistor value, so that FAST Timeout / SLOW Timeout is changed by that. WDT_OSC has the function to stop its working when the external resistor at the RTW pin is shorted or OPEN (WDT_OSC_DET). Once CLK_DET is detected, XRSTOUT becomes Low. Oscillator (CLK_DET) This block monitors both DIGITAL_OSC and WDT_OSC. 2 OSCs always monitor their frequency each other and it leads to the higher reliability. When an error happened at the monitoring, XRSTOUT becomes Low. Over Voltage Detection (OVD1, OVD2, OVD3, OVD4, OVD_RST) When input voltage goes over the threshold level, OVD is detected and the PG1, PG2, PG3 and PG4 pins are driven by Low. Detecting pins are DIN1, DIN2, DIN3 and DIN4 and RSTIN. OVD detection for the DIN1, DIN2, DIN3 and DIN4 pins causes corresponding the PG1, PG2, PG3 and PG4 pins to become Low. OVD detection for RSTIN causes the XRSTOUT pin to become Low. These output signals become High at 10 ms (Typ) after each input pin returns within the nominal voltage range. And each input has a filter in DIGITAL BLOCK, then overshoot within 50 µs (Min) is ignored. Under Voltage Detection (UVD1, UVD2, UVD3, UVD4, UVD_RST) When input voltage goes below the threshold level, UVD is detected and the PG1, PG2, PG3 and PG4 pins are driven by Low. Detecting pins are DIN1, DIN2, DIN3, DIN4 and RSTIN. UVD detection for the DIN1, DIN2, DIN3 and DIN4 pins causes corresponding the PG1, PG2, PG3 and PG4 pins to become Low. UVD detection for RSTIN causes the XRSTOUT pin to become Low. These output signals become High at 10 ms (Typ) after each input pin returns within the nominal voltage range. And each input has a filter in DIGITAL BLOCK, then undershoot within 50 µs (Min) is ignored. BIST When VDD Power on Reset (monitoring the RSTIN pin) is released, BIST is performed and self-test for DIN1, DIN2, DIN3, DIN4, RSTIN and VREF_DET comparators are executed to see if each comparator correctly toggles their High/Low output based on input level change. BIST time (tBIST) is 2 ms (Max). Once BIST ends without any errors, XRSTOUT becomes High. If an error is found during BIST, XRSTOUT keeps Low and BIST is repeated until it passes. Watchdog Timer (WDT) Watchdog Timer (WDT) monitors microprocessor’s operation by detecting the time from both rise and fall edge of WDIN. If BIST result is abnormality, WDT does not work and XRSTOUT is kept low. WDT is activated when WDOUT=High, and both WDEN and XRSTOUT have to be High in order to get WDOUT to be High. As long as the duty of WDIN clock is kept within “Trigger open window” in Figure 1, WDT does not detect any errors and XRSTOUT stays at High. www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 5/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 BD39040MUF-C Description of Blocks - continued WDT St art f rom rising of WDOUT Detec ti on guaranteed Detec ti on guaranteed WDT Fast Tim eout WDIN WDT S LOW Ti meout WDT Trigger open window tWF (Mi n) t[ms] tWF (Max ) tO K(Typ) tWS (Mi n) tWS (Max ) Figure 1. WDT Window Description Sequence for FAST Timeout and SLOW Timeout are shown in Figure 2 and Figure 3. WDT FAST Timeout Detection 1. WDIN input signal is ignored when WDOUT=Low. WDT is activated when WDOUT=High, and both WDEN and XRSTOUT have to be High in order to get WDOUT to be High. 2. For the initial duration just after WDOUT goes to High, only SLOW Timeout detection works and FAST Timeout does not work. Either Low or High input to the WDIN pin is acceptable as initial level. Once rising-up or falling-down edge of WDIN comes within SLOW Timeout, both FAST Timeout and SLOW Timeout detections start to work. 3. These time detection monitors the time until next edge and when it detects WDIN edge within FAST Timeout (tWF), XRSTOUT and WDOUT becomes Low. XRSTOUT goes back to High after 10 ms (Typ) delay, while WDOUT goes back to High after tWDIM (500 ms: Typ) in addition to tRSTL (10 ms: Typ) as long as WDEN=High. tWDIM is implemented as a time for microprocessor to be reset normally and stabilized. If this time is unnecessary and WDT should be activated as soon as possible, WDEN may be controlled like state 5 in the Figure 2. WDEN toggle during XRSTOUT=Low is ignored. 4. When WDOUT becomes High, WDT is activated again and operation resumes. Only SLOW Timeout detection works until the next first edge, and both SLOW Timeout and FAST Timeout starts at the first edge like state 1 in Figure 2. 5. If this time is unnecessary and WDT should be activated as soon as possible, WDEN may be controlled like in Figure 2. tWDIM is canceled by toggling WDEN like High->Low->High and WDT is activated immediately even during tWDIM. After WDT is enabled it works as same as state 2 in Figure 2. 6. When WDEN is Low, WDOUT becomes Low and WDT is disabled. During this period WDIN input signal is ignored and XRSTOUT output is not affected by that. FAST Timeout Ignored OK OK OK OK FAST Timeout Ignored OK Ignored OK OK Ignored OK Ignored WDIN WDEN Enable:ON Enable:OFF O.K. tWS FAST Timeout SLOW Timeout O.K. O.K. FAST Timeout SLOW Timeout tWF tWS Only SLOW Timeout is monitored for the first edge right after WDOUT=High FAST Timeout O.K. Enable:OFF XRSTOUT O.K. O.K. O.K. SLOW Timeout SLOW Timeout O.K. SLOW Timeout FAST Timeout O.K. SLOW Timeout SLOW Timeout tRSTL 10ms tWDIM 500ms tRSTL 10ms 2 O.K. FAST Timeout SLOW Timeout tRSTL 10ms WDOUT O.K. SLOW Timeout SLOW Timeout FAST Timeout 1 SLOW Timeout FAST Timeout FAST Timeout state Enable:ON Ignored 3 tRSTL 10ms 4 tWDIM 500ms 5 6 Figure 2. WDT FAST Timeout Detection www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 6/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 BD39040MUF-C Block Diagrams - continued WDT SLOW Timeout Detection 1. WDIN input signal is ignored when WDOUT=Low. WDT is activated when WDOUT=High, and both WDEN and XRSTOUT have to be High in order to get WDOUT to be High. 2. For the initial duration just after WDOUT goes to High, only SLOW Timeout detection works and FAST Timeout does not work. Either Low or High input to the WDIN pin is acceptable as initial level. Once rising-up or falling-down edge of WDIN comes within SLOW Timeout, both FAST Timeout and SLOW Timeout detections start to work. 3. These time detection monitors the time until next edge and when it can not detect WDIN edge within SLOW Timeout (tWS), XRSTOUT and WDOUT becomes Low. XRSTOUT goes back to High after 10 ms (Typ) delay, while WDOUT goes back to High after tWDIM (500 ms: Typ) in addition to tRSTL (10 ms: Typ) as long as WDEN=High. tWDIM is implemented as a time for microprocessor to be reset normally and stabilized. If this time is unnecessary and WDT should be activated as soon as possible, WDEN may be controlled like state 5 in the Figure 3. WDEN toggle during XRSTOUT=Low is ignored. 4. When WDOUT becomes High, WDT is activated again and operation resumes. Only SLOW Timeout detection works until the next first edge, and both SLOW Timeout and FAST Timeout starts at the first edge like state 1 in Figure 3. 5. If this time is unnecessary and WDT should be activated as soon as possible, WDEN may be controlled like the Figure 3. tWDIM is canceled by toggling WDEN like High->Low->High and WDT is activated immediately even during tWDIM. After WDT is enabled it works as same as state 2 in Figure3. 6. When WDEN is Low, WDOUT becomes Low and WDT is disabled. During this period WDIN input signal is ignored and XRSTOUT output is not affected by that. Ignored OK OK SLOW Timeout OK Ignored SLOW Timeout OK Ignored OK Ignored OK Ignored WDIN WDEN Enable:ON Enable:OFF Ignored O.K. tWS FAST Timeout SLOW Timeout O.K. FAST Timeout SLOW Timeout O.K. Enable:ON SLOW Timeout O.K. O.K. SLOW Timeout FAST Timeout tWF tWS Only SLOW Timeout is monitored for the first edge right after WDOUT=High O.K. O.K. SLOW Timeout O.K. SLOW Timeout SLOW Timeout tRSTL 10ms WDOUT tRSTL 10ms 2 O.K. SLOW Timeout XRSTOUT 1 SLOW Timeout FAST Timeout FAST Timeout FAST Timeout state Enable:OFF tRSTL 10ms tRSTL 10ms tWDIM 500ms 3 4 tWDIM 500ms 5 6 Figure 3. WDT SLOW Timeout Detection www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 7/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 BD39040MUF-C WDT SLOW Timeout Detection - continued SLOW Timeout Ignored SLOW Timeout SLOW Timeout SLOW Timeout WDIN Enable:ON WDEN O.K. SLOW Timeout O.K. tWS WDT Disabled XRSTOUT SLOW Timeout O.K. tWS SLOW Timeout O.K. tWS SLOW Timeout tWS WDT Enabled tRSTL 10ms tRSTL 10ms tRSTL 10ms tWDIM 500ms tRSTL 10ms tRSTL 10ms tRSTL 10ms tRSTL 10ms tWDIM 500ms tWDIM 500ms tRSTL 10ms tWDIM 500ms WDOUT Figure 4. XRSTOUT Behavior with Continuous WDT Timeout Detected The window time for detection can be changed by the resistor value between the RTW and GND pins. Following figure shows the detection time determined by RRTW resistor value. Please refer to a table of electric characteristic regarding accuracy. Customer can choose the value ranging from 10 kΩ to 47 kΩ according to their clock frequency. The ratio for detection time is fixed and can be shown like this, FAST Timeout : SLOW Timeout = 1 : 2. WDT Detection Time vs RRTW 130 120 SLOW Timeout Detect Area guaranteed 110 100 Detection Time [ms] 90 80 SLOW Timeout Detect 70 FAST/SLOW Normal time 60 50 40 FAST Timeout Detect 30 20 FAST Timeout Detect Area guaranteed 10 0 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 RRTW[kΩ] Figure 5. Detection Time vs RRTW www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 8/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 BD39040MUF-C Absolute Maximum Ratings Parameter VDD Voltage RSTIN Voltage DIN1,DIN2,DIN3,DIN4 Voltage XRSTOUT Voltage PG1,PG2,PG3,PG4 Voltage WDIN Voltage Symbol Rating Unit VDD -0.3 to +7 V VRSTIN VDIN1, VDIN2, VDIN3, VDIN4 VXRSTOUT VPG1, VPG2, VPG3, VPG4 -0.3 to +7 V -0.3 to +7 V -0.3 to +7 V -0.3 to +7 V VWDIN -0.3 to +7 V WDEN Voltage VWDEN -0.3 to +7 V WDOUT Voltage VWDOUT -0.3 to VDD+0.3 V RTW Voltage VRTW -0.3 to VDD+0.3 V Maximum Junction Temperature Tjmax 150 °C Tstg -55 to +150 °C Storage Temperature Range Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing board size and copper area so as not to exceed the maximum junction temperature rating. Thermal Resistance(Note 1) Parameter Thermal Resistance (Typ) Symbol Unit 1s(Note 3) 2s2p(Note 4) θJA 189.0 57.5 °C/W ΨJT 23 10 °C/W VQFN16FV3030 Junction to Ambient Junction to Top Characterization Parameter (Note 2) (Note 1) Based on JESD51-2A(Still-Air). (Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note 3) Using a PCB board based on JESD51-3. (Note 4) Using a PCB board based on JESD51-5, 7. Layer Number of Measurement Board Single Material Board Size FR-4 114.3 mm x 76.2 mm x 1.57 mmt Top Copper Pattern Thickness Footprints and Traces 70 μm Layer Number of Measurement Board 4 Layers Material Board Size FR-4 114.3 mm x 76.2 mm x 1.6 mmt Top Thermal Via(Note 5) Pitch Diameter 1.20 mm Φ0.30 mm 2 Internal Layers Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70 μm 74.2 mm x 74.2 mm 35 μm 74.2 mm x 74.2 mm 70 μm (Note 5) This thermal via connects with the copper pattern of all layers. Recommended Operating Conditions Parameter Symbol Min Typ Max Unit Operating Temperature VDD Voltage Topr VDD -40 2.7 - +125 5.5 °C V WDIN Input Pulse Width tWDIN 10 - 125 ms WDIN Minimum ON Pulse / OFF Pulse tWDP - - 100 μs www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 9/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 BD39040MUF-C Electrical Characteristics (Unless otherwise specified VDD=2.7 V to 5.5 V, -40 °C ≤ Ta ≤ +125 °C) Parameter Symbol Min Typ Max Unit Conditions IVDD 440 785 1320 µA VDD=4.1 V, RRTW =27 kΩ, XRSTOUT,PG1,PG2,PG3,PG4=H VVDDUV1 2.25 2.50 2.65 V VDD monitor VVDDUV2 2.30 2.55 2.70 V VDD monitor VVDDHYS - 50 - mV VUVD1 0.698 0.720 0.742 V DIN1 Pin Voltage=Sweep down VOVD1 0.854 0.880 0.906 V DIN1 Pin Voltage=Sweep up tDIN1 All Circuit Current VDD Power On Reset Threshold Voltage (Falling) VDD Power On Reset Threshold Voltage (Rising) VDD Power On Reset Hysteresis Power Good DIN1 Power Good Low Detect Voltage DIN1 Power Good High Detect Voltage DIN1 Input Filter Time 75 - µs VPG1L 50 - 100 PG1 Low Voltage 0.3 V IPG1=1 mA PG1 Leak Current ILPG1 - - 2 µA VPG1=5.5 V PG1 Assertion Delay Time DIN2 Power Good Low Detect Voltage DIN2 Power Good High Detect Voltage DIN2 Input Filter Time tPG1 7 10 13 ms VUVD2 0.698 0.720 0.742 V DIN2 Pin Voltage=Sweep down VOVD2 0.854 0.880 0.906 V DIN2 Pin Voltage=Sweep up tDIN2 75 - µs VPG2L 50 - 100 PG2 Low Voltage 0.3 V IPG2=1 mA PG2 Leak Current ILPG2 - - 2 µA VPG2=5.5 V PG2 Assertion Delay Time DIN3 Power Good Low Detect Voltage DIN3 Power Good High Detect Voltage DIN3 Input Filter Time tPG2 7 10 13 ms VUVD3 0.698 0.720 0.742 V DIN3 Pin Voltage=Sweep down VOVD3 0.854 0.880 0.906 V DIN3 Pin Voltage=Sweep up tDIN3 50 - 75 - 100 µs 0.3 V IPG3=1 m A VPG3=5.5 V PG3 Low Voltage VPG3L PG3 Leak Current ILPG3 - - 2 µA PG3 Assertion Delay Time DIN4 Power Good Low Detect Voltage DIN4 Power Good High Detect Voltage DIN4 Input Filter Time tPG3 7 10 13 ms VUVD4 0.698 0.720 0.742 V DIN4 Pin Voltage=Sweep down VOVD4 0.854 0.880 0.906 V DIN4 Pin Voltage=Sweep up tDIN4 50 - 75 - 100 µs 0.3 V IPG4=1 mA VPG4=5.5 V PG4 Low Voltage VPG4L PG4 Leak Current ILPG4 - - 2 µA PG4 Assertion Delay Time tPG4 7 10 13 ms www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 10/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 BD39040MUF-C Electrical Characteristics (Unless otherwise specified VDD=2.7 V to 5.5 V, -40 °C ≤ Ta ≤ +125 °C) - continued Parameter Symbol Min Typ Max Unit VUVDRST 0.698 0.720 0.742 V RSTIN Pin Voltage=Sweep down VOVDRST 0.854 0.880 0.906 V RSTIN Pin Voltage=Sweep up tRSTIN 75 - µs XRSTOUT Low Voltage 50 - 100 VXRSTL 0.3 V IVDDRST=1 mA XRSTOUT Leak Current IXRST - - 10 µA VVDDRST=5.5 V XRSTOUT Assertion Delay Time tXRSTL 7 10 13 ms FAST Timeout Detect1 tWF1 9.0 11.2 13.5 ms RRTW =10 kΩ SLOW Timeout Detect1 tWS1 17.9 22.4 26.9 ms RRTW =10 kΩ FAST/SLOW Normal Time1 tOK1 13.6 15.7 17.8 ms RRTW =10 kΩ FAST Timeout Detect2 tWF2 24.4 30.5 36.6 ms RRTW =27 kΩ SLOW Timeout Detect2 tWS2 48.8 61.0 73.2 ms RRTW =27 kΩ FAST/SLOW Normal Time2 tOK2 36.7 42.7 48.7 ms RRTW =27 kΩ FAST Timeout Detect3 tWF3 42.5 53.2 63.8 ms RRTW =47 kΩ SLOW Timeout Detect3 tWS3 85.0 106.3 127.6 ms RRTW =47 kΩ FAST/SLOW Normal Time3 tOK3 63.9 74.4 84.9 ms RRTW =47 kΩ WDIN Detect Minimum Pulse Width tWDIN 20 - - µs WDIN Initial Mask Time tWDIM 325 500 675 ms WDIN Pull-down Resistor Value RWDIN 50 100 kΩ WDIN Low Level Input Voltage VWDINL - - 150 0.2 x VDD WDIN High Level Input Voltage VWDINH WDEN Pull-down Resistor Value VDD Power On Reset RSTIN Power Good Low Detect Voltage RSTIN Power Good High Detect Voltage RSTIN Input Filter Time Conditions Watch Dog Timer VDD Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Resistor Transistor (NPN) Pin A Pin B C E Pin A N P+ P N N P+ N Pin B B Parasitic Elements N P+ N P N P+ B N C E Parasitic Elements P Substrate P Substrate GND GND Parasitic Elements GND Parasitic Elements GND N Region close-by Figure 28. Example of Monolithic IC Structure 11. Ceramic Capacitor When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others. www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 23/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 BD39040MUF-C Ordering Information B D 3 9 0 4 Part Number 0 M U F - Package MUF: VQFN16FV3030 CE2 Packaging and forming specification C: for Automotive E2: Embossed tape and reel Marking Diagram VQFN16FV3030 (TOP VIEW) Part Number Marking D39 LOT Number 0 4 0 Pin 1 Mark www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 24/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 BD39040MUF-C Physical Dimension and Packing Information Package Name www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 VQFN16FV3030 25/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 BD39040MUF-C Revision History Date Revision 15.Feb.2019 Rev.001 Changes New Release www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 26/26 TSZ02201-0A3A0AM00460-1-2 15.Feb.2019 Rev.001 Notice Precaution on using ROHM Products 1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used. However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software). 3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Datasheet General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001
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BD39040MUF-CE2
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