BD4220AMUV

1/4 Structure Product name Model No. Silicon monolithic integrated circuit Strobe capacitor charging control IC ＢＤ４２２０ＡＭＵＶ 1. 2. 3. 4. 5. 6. 7. 8. Built-in power transistor(50V DMOS) Adjustable transformer primary-side peak current to linear current with the ADJ pin Charging control switching with the START pin Includes high precision full charge voltage detection circuit and output pin Various built-in protective circuits (TSD, UVLO) Built-in protective circuits (SDP) Built-in IGBT driver(VDD supply for IGBT driver) Employs small package: VQFN016V3030 (3.0 mm×3.0 mm×1.0 mm) Features ○ Absolute Maximum Ratings（Ta＝25℃） Parameter VCC supply voltage VDD supply voltage SW pin VC pin (DC characteristic) Input pin voltage (START, ADJ, IGBT_IN, IGBT_EN) Operating temperature range Storage temperature range Junction temperature Power dissipation Symbol VCC VDD VSW VCDC VI Topr Tstg Tjmax Pd Rating -0.3～7 -0.3～7 50 -15～50 -0.3～7 -35～+85 -55～+150 150 1770 *1 Unit V V V V V °C °C °C mW ○ Operating Conditions（Ta=25℃） Parameter VCC supply voltage range VDD supply voltage range Input pin voltage (START, ADJ, IGBT_IN, IGBT_EN) Symbol VCC VDD VI VFULL Rating 2.5～5.5 2.5～5.5 0～VCC 0～5.5 Unit V V V V FULL pin input current range *1: Reduced by 14.16 mW/°C at Ta=25°C or more (When mounted on a 74.2 mm×74.2 mm×1.6 mm glass epoxy, 4-layer board: Surface radiating copper foil of 6.28mm2, copper foil laminated in each layer) ○ Outside marking and dimension (UNIT:mm) B4 2 20A LOT No. Notes on this document Fig.1 Outside marking and dimension The Japanese version of this document is the formal specifications. The translated version of the document should be used for reference. If there is any difference between the formal specifications and the translated version, the formal specifications shall take priority. REV. A 2/4 ○ Electrical Characteristics (Ta=25℃,VCC=START=VDD=3.3V, VBAT=3.6V,ADJ=1.0V,unless otherwise specified.) Parameter 【Overall device】 VCC current consumption VCC Circuit current during standby operation VDD current consumption VDD Circuit current during standby operation 【Standby control START pin】 START pin high voltage START pin low voltage START pin sink current Unresponsive time when START shorted 【Transformer primary-side driver block】 SW pin leak current SW pin peak current 1 SW pin peak current 2 SW pin peak current 3 SW saturation voltage 【Charging characteristics adjustment block】 ADJ sink current Maximum ON time Maximum OFF time 【Transformer secondary-side detection block】 VC pin sink current Full charge detection voltage OFF detection voltage FULL pin ON resistance FULL pin leak current 【Protective circuit block】 UVLO detection voltage UVLO hysteresis width UVLO VDD detection voltage UVLO VDD hysteresis width 【IGBT driver block】 High-level output short circuit current Low-level output short circuit current IGBT_IN high-level input voltage range1 IGBT_IN high-level input voltage range2 IGBT_IN low-level input voltage range IGBT_IN sink current IGBT_EN high-level input voltage range IGBT_EN low-level input voltage range IGBT_EN sink current Symbol Target value Min. － － 20 － 2.0 － 12 6 － 0.7 1.0 1.95 － － 25 12 1 29.7 -1.3 50 － 1.9 180 1.9 180 90 30 2.0 1.4 － 12 2.0 － 4.5 Standard 1 － 40 － － － 24 12.5 － 0.8 1.1 2.05 0.20 2.5 50 25 2 30 -0.5 110 － 2.05 230 2.05 230 140 60 － － － 24 － － 6.5 Max. 2.5 1 80 1 － 0.6 36 25 1 0.9 1.2 2.15 0.40 5 100 50 4 30.3 -0.2 300 1 2.2 280 2.2 280 200 90 － － 0.6 36 － 0.6 10 Unit Condition IVCC ISTB IVDD IVDDSTB VSTH VSTL ISTART TSTART ISWL IPEAK1 IPEAK2 IPEAK3 VSAT IADJ TONMAX TOFFMAX IVC VFULLTH VOFFL RFULLL IFULLH VUVLOTH VUVLOHYS VUVLODTH VUVLODHYS Ioso Iosi VIGBTH1 VIGBTH2 VIGBTL IIGBT_IN VIGBTENH VIGBTENL IIGBT_EN mA μA μA μA V V μA μs μA A A A V μA μs μs mA V V Ω μA V mV V mV mA mA V V V μA V V μA At Output OFF START=0V IGBT_EN=3.3V,IGBT_IN=0V IGBT_EN=0.0V,IGBT_IN=0V START=3.3V SW=50V ADJ=0V ADJ=1V ADJ=3V ISW=0.5A VC=30V FULL=0.5V FULL=3.3V VCC detection VDD detection IGBT_IN=3.3V, IGBT_EN=3.3V IGBT_IN=3.3V, IGBT_EN=3.3V IGBT_IN=3.3V, IGBT_EN=3.3V START=0V,IGBT_OUT_P=0V IGBT_IN=0V, IGBT_EN=3.3V START=0V,IGBT_OUT_N=3.3V IGBT_EN=3.3V, START=0V VDD=3.0～3.6V, Ta=-25～85 , IGBT_EN=3.3V IGBT_EN=3.3V, START=0V IGBT_IN=3.3V, START=0V IGBT_IN=3.3V, START=0V IGBT_EN=3.3V, IGBT_IN=3.3V ○ PIN No. Pin No. 1 2 3 4 5 6 7 8～10 11,12 13 14 15 16 Pin Name VDD VCC GND ADJ FULL START VC SW PGND IGBT_IN IGBT_EN IGBT_OUT_N IGBT_OUT_P Function VDD supply pin VCC supply pin Ground pin primary-side current control pin FULL charge detection flag pin Standby pin Secondary–side voltage detection pin Switching pin Power GND pin Input terminal of trigger signal for starting output of IGBT driver Input terminal of control enable signal of IGBT driver IGBT driver output N pin IGBT driver output P pin 16 15 14 13 1 2 3 4 12 11 10 9 5 6 7 8 Fig.3 TOP VIEW ◎This is not designed for radiation resistance. REV. A 3/4 ○ Blosk Diagrum VCC SW SW SW ○ UVLO、TSD、SDP 2 STB VREF OS UVLO VCC UVLO TSD 8 9 10 Operation stop due to UVLO detection Operation restart due to UVLO release Hysterisis UVLO detection voltage TSD START 6 START SQ R VCC LOGIC DRV SDP STB UVLO TSD OFF time detection MAXON VC ＋ MAX OFF TIME STB SDP FULL t V（START） SQ R PGND t MAX_ON MAX_ON SDP V（VC） + ADJ 11 12 VC AntiRinging Filter PGND Operation stop due to increase of Operation restart due to decrease of chip temperature chip temperature TSDP PGND 4 FULL Q 1/A t 5 FULL S R OS + - 7 VC V（cap） Voltage at completion of charge VDD 1 UVLO_VDD IGBT_IN IGBT_OUT_P t I（ＶＢＡＴ） 16 13 14 GND GND 15 IGBT_OUT_N IGBT_EN 3 *STB : Standby signal *OS : One shot pulse t A BC D E F G H I Fig.3 Block diagram Fig.4 Timing Chart: Under Protective Circuit Operation ◆UVLO If the VCC voltage is reduced to the UVLO detection voltage specified in the electrical characteristics or less, the UVLO C E protective circuit is activated and the charging operation temporarily stops. (See Time ○ and ○ in Fig.4.) After that, when the D F VDD voltage becomes the UVLO release voltage or more, the charging operation automatically restarts. (See Time ○ and ○ in Fig.4.) ◆VDD UVLO If the VDD voltage becomes the VDD UVLO detection voltage or less, the IGBT_OUT voltage is forced to be set to "L". ◆Termal Shut Down (TSD) It protects the IC against thermal runaway due to excessive temperature rise (Tj>175°C [TYP]). After detection, the charging G operation temporarily stops (See time ○ in Fig.4.), and when the chip temperature decreases, (Tj