BD52W05G-CTR

Nano EnergyTM Datasheet Voltage Detector (Reset) IC Series for Automotive Application Free Time Delay Setting Dual Output Window Voltage Detector (Reset) IC BD52WxxG-C General Description Key Specifications ROHM's free time delay setting window voltage detector ICs are highly accurate, with low current consumption feature that uses CMOS process. Delay time setting can be control by an external capacitor. It has dual N-channel open drain output. The time delay has ±50 % accuracy for the entire operating temperature range of -40 °C to +125 °C. ◼ Over Voltage Detection: 1.32 V, 1.65 V, 1.98 V, 2.75 V, 3.63 V, 5.50 V (Typ) ◼ Under Voltage Detection: 1.08 V, 1.35 V, 1.62 V, 2.25 V, 2.97 V, 4.50 V (Typ) ◼ Ultra-Low Current Consumption: 300 nA (Typ) ◼ Delay Time Accuracy: ±50 % (-40 °C to +125 °C) (CT pin capacitor ≥ 1 nF) Features ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ Nano Energy™ AEC-Q100 Qualified(Note 1) Functional Safety Supportive Automotive Products Under and Over Voltage Monitor Free Time Delay Setting Nch Open Drain Output Very Small, Lightweight and Thin Package SSOP6 Package is Similar to SOT-23-6 (JEDEC) Special Characteristics ◼ Detection Voltage Accuracy: ±5.0 % (-40 °C to +125 °C) Package SSOP6: W (Typ) x D (Typ) x H (Max) 2.9 mm x 2.8 mm x 1.25 mm (Note 1) Grade 1 Application All Automotive Devices That Requires Voltage Detection Typical Application Circuit VSENSE VDD2 VDD1 VDD CT SENSE GND UVB RST OVB Microcontroller CCT GND Nano Energy™ is a trademark or a registered trademark of ROHM Co., Ltd. 〇Product structure : Silicon integrated circuit www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 〇This product has no designed protection against radioactive rays. 1/20 TSZ02201-0GAG2G600090-1-2 05.Nov.2021 Rev.003 BD52WxxG-C Pin Configuration SSOP6 TOP VIEW SENSE 6 1 CT GND 5 2 VDD OVB 4 3 UVB Pin Description Pin No. Pin Name 1 CT 2 3 4 5 6 VDD UVB OVB GND SENSE Function Capacitor connection pin for output delay time setting Power supply voltage Under voltage detection output pin Over voltage detection output pin GND SENSE pin Block Diagram VDD (Note) UVB SENSE (Note) Delay (Note) Vref OVB Circuit (Note) (Note) GND CT (Note) Parasitic Diode www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 2/20 TSZ02201-0GAG2G600090-1-2 05.Nov.2021 Rev.003 BD52WxxG-C Absolute Maximum Ratings (Ta = 25 °C) Parameter Symbol VDD VSENSE VCT VUVB VOVB Power Supply Voltage SENSE Pin Voltage CT Pin Voltage UVB Pin Voltage OVB Pin Voltage UVB Pin Output Current OVB Pin Output Current Limit -0.3 to +7 -0.3 to +7 (GND - 0.3) to +7 (GND - 0.3) to +7 (GND - 0.3) to +7 70 70 +150 -55 to +150 IOUVB IOOVB Tjmax Tstg Maximum Junction Temperature Storage Temperature Range Unit V mA °C °C Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing board size and copper area so as not to exceed the maximum junction temperature rating. Thermal Resistance(Note 1) Parameter Symbol Thermal Resistance (Typ) Unit 1s(Note 3) 2s2p(Note 4) θJA 376.5 185.4 °C/W ΨJT 40 30 °C/W SSOP6 Junction to Ambient Junction to Top Characterization Parameter(Note 2) (Note 1) Based on JESD51-2A (Still-Air). (Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note 3) Using a PCB board based on JESD51-3. (Note 4) Using a PCB board based on JESD51-7. Layer Number of Measurement Board Single Material Board Size FR-4 114.3 mm x 76.2 mm x 1.57 mmt Top Copper Pattern Thickness Footprints and Traces 70 μm Layer Number of Measurement Board 4 Layers Material Board Size FR-4 114.3 mm x 76.2 mm x 1.6 mmt Top 2 Internal Layers Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70 μm 74.2 mm x 74.2 mm 35 μm 74.2 mm x 74.2 mm 70 μm Recommended Operating Conditions Parameter Operating Supply Voltage SENSE Pin Voltage Operating Temperature www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Symbol VDD VSENSE Topr 3/20 Min 1.6 0 -40 Typ +25 Max 6.0 6.0 +125 Unit V V °C TSZ02201-0GAG2G600090-1-2 05.Nov.2021 Rev.003 BD52WxxG-C Electrical Characteristics (Unless otherwise specified Ta = -40 °C to +125 °C, VDD = 1.6 V to 6.0 V) Parameter Symbol Under Voltage Detection Voltage VUVDET Over Voltage Detection Voltage VOVDET Circuit Current UVB Operating Voltage Range OVB Operating Voltage Range IDD VOPLUVB VOPLOVB UVB “Low” Output Voltage VOLUVB OVB “Low” Output Voltage VOLOVB L→H Propagation Delay Time tPLH Condition BD52W01G-C BD52W02G-C BD52W03G-C VSENSE = H→L, RL = 100 kΩ BD52W04G-C BD52W05G-C BD52W06G-C BD52W01G-C BD52W02G-C BD52W03G-C VSENSE = L→H, RL = 100 kΩ BD52W04G-C BD52W05G-C BD52W06G-C VDD = VSENSE = (VUVDET + VOVDET) / 2 VOLUVB ≤ 0.4 V, Ta = -40 °C to +125 °C, RL = 100 kΩ VOLOVB ≤ 0.4 V, Ta = -40 °C to +125 °C, RL = 100 kΩ VSENSE < VUVDET, VDD = 1.6 V, ISINK = 1.0 mA VSENSE < VUVDET, VDD = 2.4 V, ISINK = 2.0 mA VSENSE > VOVDET, VDD = 1.6 V, ISINK = 1.0 mA VSENSE > VOVDET, VDD = 2.4 V, ISINK = 2.0 mA VUVB = GND→50 %, CCT = 0.01 μF, VDD = 3.0 V (Note 1) Min 1.02 1.28 1.54 2.13 2.82 4.27 1.25 1.56 1.88 2.61 3.45 5.22 Limit Typ 1.08 1.35 1.62 2.25 2.97 4.50 1.32 1.65 1.98 2.75 3.63 5.50 Max 1.14 1.42 1.70 2.37 3.12 4.73 1.39 1.74 2.08 2.89 3.82 5.78 - 300 3000 nA 1.6 - - V 1.6 - - V - - 0.4 0.4 0.4 0.4 27.7 55.5 83.2 Unit V V V V ms RL: Pull-up resistor connected between UVB, OVB and power supply. (Note 1) CT delay capacitor range: open to 4.7 μF. Function Explanation 1. Nano Energy™ Nano Energy™ is a combination of technologies which realizes ultra low quiescent current operation. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 4/20 TSZ02201-0GAG2G600090-1-2 05.Nov.2021 Rev.003 BD52WxxG-C Typical Performance Curves 1.0 1.0 0.9 0.9 0.8 +125 °C Circuit Current: IDD [µA] Circuit Current: IDD [µA] 0.8 0.7 0.6 +25 °C 0.5 0.4 0.3 0.2 6.0 V 0.7 3.0 V 0.6 0.5 0.4 0.3 0.2 -40 °C 0.1 1.6 V 0.1 0.0 0.0 1 2 3 4 5 Operating Supply Voltage: VDD [V] 6 -50 Figure 1. Circuit Current vs Operating Supply Voltage (VDD = SENSE) 0 25 50 75 100 Temperature: Ta [°C] 125 150 Figure 2. Circuit Current vs Temperature (VDD = SENSE) 2.1 2.1 BD52W03G-C VOVDET Detection Voltage: VUVDET, VOVDET [V] BD52W03G-C Detection Voltage: VUVDET, VOVDET [V] -25 2.0 1.9 1.8 VUVDET 1.7 1.6 1.5 VOVDET 2.0 1.9 1.8 1.7 VUVDET 1.6 1.5 1.0 2.0 3.0 4.0 5.0 Operating Supply Voltage: VDD [V] 6.0 -50 Figure 3. Detection Voltage vs Operating Supply Voltage (Ta = 25 °C) -25 0 25 50 75 100 Temperature: Ta [°C] 125 150 Figure 4. Detection Voltage vs Temperature (VDD = 3 V) (Note) The above data is measurement value of typical sample, it is not guaranteed. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 5/20 TSZ02201-0GAG2G600090-1-2 05.Nov.2021 Rev.003 BD52WxxG-C Typical Performance Curves - continued 2.0 Hysteresis Voltage: ΔVUVDET, ΔVOVDET [%] Hysteresis Voltage: ΔVUVDET, ΔVOVDET [%] 2.0 1.5 UVB 1.0 OVB 0.5 1.5 UVB 1.0 OVB 0.5 0.0 0.0 1.0 2.0 3.0 4.0 5.0 Operating Supply Voltage: VDD [V] -50 6.0 Figure 5. Hysteresis Voltage vs Operating Supply Voltage (Ta = 25 °C) 2.0 BD52W03G-C Operating Voltage: VOPLUVB, VOPLOVB [V] Output Voltage: VUVB, VOVB [V] 0 25 50 75 100 Temperature: Ta [°C] 125 150 Figure 6. Hysteresis Voltage vs Temperature (VDD = 3 V) 6.0 Pull-up to 5 V Pull-up resistance: 100 kΩ -25 5.0 4.0 3.0 2.0 1.0 0.0 Pull-up to 5 V Pull-up resistance: 100 kΩ 1.5 OVB 1.0 UVB 0.5 0.0 1.5 1.6 1.7 1.8 1.9 2.0 Operating Supply Voltage: VDD [V] 2.1 -50 -25 0 25 50 75 100 Temperature: Ta [°C] 125 150 Figure 8. Operating Voltage vs Temperature Figure 7. Output Voltage vs Operating Supply Voltage (Ta = 25 °C, VDD = SENSE, UVB = OVB) (Note) The above data is measurement value of typical sample, it is not guaranteed. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 6/20 TSZ02201-0GAG2G600090-1-2 05.Nov.2021 Rev.003 BD52WxxG-C 90 90 80 80 VDD = 2.4 V (OVB) 70 60 "Low" Output Current: IOL[mA] "Low" Output Current: IOL [mA] Typical Performance Curves - continued VDD = 2.4 V (UVB) 50 VDD = 1.6 V (OVB) 40 30 20 VDD = 1.6 V (UVB) 10 70 60 VDD = 2.4 V (OVB) 50 40 VDD = 2.4 V (UVB) 30 VDD = 1.6 V (OVB) 20 VDD = 1.6 V (UVB) 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 Drain-Source Voltage : VDS [V] 3.0 -50 Figure 9. “Low” Output Current vs Drain-Source Voltage (Ta = 25 °C) 0 25 50 75 100 Temperature: Ta [°C] 125 150 Figure 10. “Low” Output Current vs Temperature (VDS = 0.4 V) 90 90 L→H Propagation Delay Time: tPLH [ms] L→H Propagation Delay Time: tPLH [ms] -25 80 70 OVB 60 50 UVB 40 30 20 80 70 OVB 60 50 UVB 40 30 20 1.0 2.0 3.0 4.0 5.0 Operating Supply Voltage: VDD [V] 6.0 -50 -25 0 25 50 75 100 Temperature: Ta [°C] 125 150 Figure 12. L→H Propagation Delay Time vs Temperature (VDD = 3 V, CCT = 10 nF) Figure 11. L→H Propagation Delay Time vs Operating Supply Voltage (Ta = 25 °C, CCT = 10 nF) (Note) The above data is measurement value of typical sample, it is not guaranteed. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 7/20 TSZ02201-0GAG2G600090-1-2 05.Nov.2021 Rev.003 BD52WxxG-C Typical Performance Curves - continued 120 H→L Propagation Delay Time: tPHL [µs] H→L Propagation Delay Time: tPHL [µs] 120 100 UVB 80 60 40 OVB 20 100 0 1.0 2.0 3.0 4.0 5.0 Operating Supply Voltage: VDD [V] 80 60 40 OVB 20 0 6.0 -50 Figure 13. H→L Propagation Delay Time vs Operating Supply Voltage (Ta = 25 °C) 0 25 50 75 100 Temperature: Ta [°C] 125 150 70 H→L Propagation Delay Time: tPHL [µs] L→H Propagation Delay Time: tPLH [ms] -25 Figure 14. H→L Propagation Delay Time vs Temperature (VDD = 3 V) 100000 10000 1000 UVB 100 OVB 10 1 0.1 0.0001 UVB 0.001 0.01 0.1 1 CT Pin Capacitance: CCT [µF] 10 Figure 15. L→H Propagation Delay Time vs CT Pin Capacitance (VDD = 3 V, Ta = 25 °C) UVB 60 50 40 30 OVB 20 10 0 0.0001 0.001 0.01 0.1 1 CT Pin Capacitance: CCT [µF] 10 Figure 16. H→L Propagation Delay Time vs CT Pin Capacitance (VDD = 3 V, Ta = 25 °C) (Note) The above data is measurement value of typical sample, it is not guaranteed. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 8/20 TSZ02201-0GAG2G600090-1-2 05.Nov.2021 Rev.003 BD52WxxG-C Timing Chart The following shows the change of the output voltages when operating supply voltage (VDD) and SENSE pin Voltage (VSENSE) sweep. VDD VSENSE VDD RL UVB SENSE RL Delay CVDD Vref OVB Circuit CL GND CL CT CCT Figure 17. Set-up diagram VDD VOPL: