BD5312G-2CGTR

Nano EnergyTM Datasheet Voltage Detector (Reset) IC Series for Automotive Application Free Time Delay Setting CMOS Voltage Detector (Reset) IC BD52xx-2C Series and BD53xx-2C Series General Description Key Specifications ROHM's BD52xx-2C and BD53xx-2C series are highly accurate, low current consumption Voltage Detector ICs with a capacitor controlled time delay. The lineup includes N-channel open drain output (BD52xx-2C) and CMOS output (BD53xx-2C) so that the users can select depending on the application. The devices are available for specific detection voltage ranging from 0.9V to 5.0V with 0.1V increment. The time delay has ±50% accuracy in the overall operating temperature range of -40°C to 125°C. ◼ Detection Voltage: 0.9V to 5.0V (Typ.) 0.1V step ◼ Ultra-Low Current Consumption: 270nA (Typ.) ◼ Time Delay Accuracy: ±50% (-40°C to +125°C, ) (CT pin capacitor ≥ 1nF) Special Characteristics ◼ Detection Voltage Accuracy: ±3%±12mV (VDET=0.9V to 1.6V) ±3% (VDET=1.7V to 5.0V) Special Features ◼ ◼ ◼ ◼ ◼ ◼ Package AEC-Q100 Qualified (Note1) Nano Energy Delay Time Setting controlled by external capacitor Two output types (Nch open drain and CMOS output) Very small, lightweight and thin package Package SSOP5 is similar to SOT-23-5 (JEDEC) (Note1: Grade 1) SSOP5: W(typ) x D(typ) x H(max) 2.90mm x 2.80mm x 1.25mm Application All automotive devices that requires voltage detection Application Circuit VDD1 VDD2 VDD1 RL Microcontroller BD52xx-2C Microcontroller BD53xx-2C RST CCT RST CCT GND GND Figure 1. Open Drain Output Type BD52xx-2C Series Pin Configuration CT SSOP5 TOP VIEW Figure 2. CMOS Output Type BD53xx-2C Series Pin Description N.C. SSOP5 Lot No. Marking VOUT VDD GND PIN No. 1 2 3 4 Symbol VOUT VDD GND N.C. 5 CT Function Output pin Power supply voltage GND No connection pin Capacitor connection pin for output delay time setting N.C. pin is electrically open and can be connected to either VDD or GND. Nano Energy is a combination of technologies which realizes ultra low quiescent current operation. ○Product structure：Silicon monolithic integrated circuit www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 ○This product has no designed protection against radioactive rays 1/20 TSZ02201-0R7R0G300200-1-2 10.Apr.2023 Rev.003 BD52xx-2C Series BD53xx-2C Series Ordering Information B P art N um ber D x x O utput Type 52 : O pen D rain 53 : C M O S x x G - D etection V oltage P ackage 09 : 0.9V G :S S O P 5 0.1V step 50 : 5.0V 2 C P roduct R ank C : for A utom otive G T R M anufacturing P ackaging and form ing specification C ode TR : E m bossed tape and reel Lineup Output Type Detection Voltage Marking 5.0V 1Z 4.9V 1Y 4.8V 1X 4.7V 1W 4.6V 1V 4.5V 1U 4.4V 1T 4.3V 1S 4.2V 1R 4.1V 1Q 4.0V 1P 3.9V 1N 3.8V 08 3.7V 07 3.6V 06 3.5V 05 3.4V 04 3.3V 03 3.2V 02 3.1V 01 3.0V 5G 2.9V Z9 2.8V Z8 2.7V Z7 2.6V XS 2.5V XR 2.4V 24 2.3V 23 2.2V 22 2.1V 21 2.0V 20 1.9V 19 1.8V 18 1.7V 17 1.6V 16 1.5V 15 1.4V 14 1.3V 13 1.2V 12 1.1V 11 1.0V 10 0.9V 09 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Open Drain Part Number BD5250 BD5249 BD5248 BD5247 BD5246 BD5245 BD5244 BD5243 BD5242 BD5241 BD5240 BD5239 BD5238 BD5237 BD5236 BD5235 BD5234 BD5233 BD5232 BD5231 BD5230 BD5229 BD5228 BD5227 BD5226 BD5225 BD5224 BD5223 BD5222 BD5221 BD5220 BD5219 BD5218 BD5217 BD5216 BD5215 BD5214 BD5213 BD5212 BD5211 BD5210 BD5209 2/20 CMOS Marking 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 5F 5E Part Number BD5350 BD5349 BD5348 BD5347 BD5346 BD5345 BD5344 BD5343 BD5342 BD5341 BD5340 BD5339 BD5338 BD5337 BD5336 BD5335 BD5334 BD5333 BD5332 BD5331 BD5330 BD5329 BD5328 BD5327 BD5326 BD5325 BD5324 BD5323 BD5322 BD5321 BD5320 BD5319 BD5318 BD5317 BD5316 BD5315 BD5314 BD5313 BD5312 BD5311 BD5310 BD5309 TSZ02201-0R7R0G300200-1-2 10.Apr.2023 Rev.003 BD52xx-2C Series BD53xx-2C Series Absolute Maximum Ratings (Ta=-40°C to +125°C) Parameter Symbol VDD-GND Limit -0.3 to +7 GND-0.3 to +7 GND-0.3 to VDD+0.3 Unit V 70 -40 to +125 mA °C Junction Temperature Range Io Topr Tj -40 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Power Supply Voltage Nch Open Drain Output CMOS Output Output Voltage VOUT Output Current Operating Temperature Range V Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Thermal Resistance (Note 1) Parameter Symbol Thermal Resistance (Typ) Unit 1s(Note 3) 2s2p(Note 4) θJA 376.5 185.4 °C/W ΨJT 40 30 °C/W SSOP5 Junction to Ambient Junction to Top Characterization Parameter(Note 2) (Note 1)Based on JESD51-2A(Still-Air). (Note 2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note 3)Using a PCB board based on JESD51-3. Layer Number of Measurement Board Single Material Board Size FR-4 114.3mm x 76.2mm x 1.57mmt Top Copper Pattern Thickness Footprints and Traces 70μm (Note 4)Using a PCB board based on JESD51-7. Layer Number of Measurement Board 4 Layers Material Board Size FR-4 114.3mm x 76.2mm x 1.6mmt Top 2 Internal Layers Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70μm 74.2mm x 74.2mm 35μm 74.2mm x 74.2mm 70μm www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3/20 TSZ02201-0R7R0G300200-1-2 10.Apr.2023 Rev.003 BD52xx-2C Series BD53xx-2C Series Electrical Characteristics (Unless otherwise specified Ta=-40°C to +125°C, VDD=0.8V to 6V) Parameter Symbol Condition VDET=0.9V to 1.6V, VDD=H→L, RL=100kΩ Detection Voltage VDET VDET=1.7V to 5.0V, VDD=H→L, RL=100kΩ Hysteresis Voltage ∆VDET VDD=L→H→L, RL=100kΩ Circuit Current when ON Circuit Current when OFF Operating Voltage Range IDD1 IDD2 VOPL “Low” Output Voltage (Nch) VOL “High” Output Voltage (Pch) VOH Output Leak Current (BD52xx) ILEAK Delay Time (L → H) tPLH VDD= VDET-0.2V VDD= VDET+0.5V VOL≤0.4V, Ta=-40°C to 125°C, RL=100kΩ VDD=0.8V, ISINK = 0.17mA, VDET=0.9V to 1.6V VDD=1.2V, ISINK = 1.0mA, VDET=1.7V to 5.0V VDD=2.4V, ISINK = 2.0mA, VDET=2.7V to 5.0V VDD=4.8V, ISOURCE=2.0mA, VDET(0.9V to 4.2V) VDD=6.0V, ISOURCE=2.5mA, VDET(0.9V to 5.0V) VDD= VDS=6V VOUT＝GND→50%, CT=0.01μF Note 1 Note 2 Min VDET(T) ×0.97 -0.012 VDET (T) ×0.97 VDET ×0.03 0.80 - Limit Typ Unit VDET ×0.05 0.23 0.27 - Max VDET(T) ×1.03 +0.012 VDET(T) ×1.03 VDET ×0.07 1.50 1.60 0.4 0.4 0.4 VDD-0.4 - - VDD-0.4 - - - - 1.0 µA 27.7 55.5 83.2 ms VDET(T) VDET(T) V V µA µA V V V VDET(T) : Standard Detection Voltage(0.9V to 5.0V, 0.1V step) RL: Pull-up resistor to be connected between VOUT and power supply. Note 1 tPLH : VDD=(VDET(T)–0.1V) → (VDET(T)+0.5V) for VDET=0.9V to 1.2V tPLH : VDD=(VDET(T)–0.5V) → (VDET(T)+0.5V) for VDET=1.3V to 5.0V Note 2 CT delay capacitor range: open to 4.7µF. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/20 TSZ02201-0R7R0G300200-1-2 10.Apr.2023 Rev.003 BD52xx-2C Series BD53xx-2C Series Block Diagram VDD VOUT Delay Delay Circuit Vref *1 T *1 *1 GND *1: Parasitic Diode CT Figure 3. BD52xx-2C Series VDD *1 Delay Delay Circuit Circuit Vref VOUT *1 *1 *1 GND *1: Parasitic Diode CT Figure 4. BD53xx-2C Series www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/20 TSZ02201-0R7R0G300200-1-2 10.Apr.2023 Rev.003 BD52xx-2C Series BD53xx-2C Series Typical Performance Curves 0.6 1.0 BD5209G-2C 0.9 BD5209G-2C 0.5 0.7 Circuit Current : IDD(µA) Circuit Current : IDD(µA) 0.8 Ta=125°C Ta=105°C 0.6 Ta=25°C 0.5 0.4 0.3 0.2 VDD=VDET+0.5V 0.3 0.2 VDD=VDET-0.2V 0.1 Ta=-40°C 0.1 0.4 0.0 0.0 0 1 2 3 4 5 -40 -25 -10 6 Figure 5. Circuit Current vs. VDD 20 35 50 65 80 95 110 125 Figure 6. Circuit Current vs. Temp 1.0 0.6 BD5230G-2C 0.9 BD5230G-2C 0.5 Circuit Current : IDD(µA) 0.8 Circuit Current : IDD(µA) 5 Temperature : Ta (°C) Supply Voltage : VDD (V) 0.7 Ta=125°C 0.6 Ta=105°C 0.5 Ta=25°C 0.4 0.3 0.2 0.4 VDD=VDET+0.5V 0.3 0.2 VDD=VDET-0.2V 0.1 Ta=-40°C 0.1 0.0 0.0 0 1 2 3 4 5 -40 -25 -10 6 20 35 50 65 80 95 110 125 Figure 8. Circuit Current vs. Temp Figure 7. Circuit Current vs. VDD www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5 Temperature : Ta (°C) Supply Voltage : VDD (V) 6/20 TSZ02201-0R7R0G300200-1-2 10.Apr.2023 Rev.003 BD52xx-2C Series BD53xx-2C Series Typical Performance Curves - continued 1.0 0.6 BD5250G-2C 0.9 BD5250G-2C 0.5 Circuit Current : IDD(µA) Circuit Current : IDD(µA) 0.8 0.7 0.6 Ta=125°C 0.5 Ta=25°C Ta=105°C 0.4 0.3 0.2 0.3 VDD=VDET-0.2V 0.2 0.1 Ta=-40°C 0.1 VDD=VDET+0.5V 0.4 0.0 0.0 0 1 2 3 4 5 -40 -25 -10 6 20 35 50 65 80 95 110 125 Temperature : Ta (°C) Supply Voltage : VDD (V) Figure 10. Circuit Current vs. Temp Figure 9. Circuit Current vs. VDD 6.0 1.3 BD5209G-2C BD5209G-2C 1.2 Detection Voltage : VDET(V) 5.0 Output Voltage : VOUT(V) 5 4.0 3.0 2.0 1.0 1.1 VDET + ΔVDET 1.0 0.9 VDET 0.8 0.7 0.0 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -40 -25 -10 5 20 35 50 65 80 95 110 125 Supply Voltage : VDD (V) Temperature : Ta (°C) Figure 11. Detection Voltage Figure 12. Detection Voltage and Release Voltage www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 7/20 TSZ02201-0R7R0G300200-1-2 10.Apr.2023 Rev.003 BD52xx-2C Series BD53xx-2C Series Typical Performance Curves - continued 6.0 3.6 BD5230G-2C 3.5 Detection Voltage : VDET(V) Output Voltage : VOUT(V) 5.0 4.0 3.0 2.0 1.0 BD5230G-2C 3.4 VDET + ΔVDET 3.3 3.2 3.1 3.0 2.9 VDET 2.8 2.7 0.0 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 -40 -25 -10 20 35 50 65 80 95 110 125 Temperature : Ta (°C) Figure 13. Detection Voltage Figure 14. Detection Voltage and Release Voltage 5.6 6.0 BD5250G-2C 5.5 Detection Voltage : VDET(V) 5.0 Output Voltage : VOUT(V) 5 Supply Voltage : VDD (V) 4.0 3.0 2.0 1.0 BC BD5250G-2C VDET + ΔVDET 5.4 5.3 5.2 5.1 5.0 VDET 4.9 4.8 4.7 0.0 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 -40 -25 -10 5 20 35 50 65 80 95 110 125 Supply Voltage : VDD (V) Temperature : Ta (°C) Figure 15. Detection Voltage Figure 16. Detection Voltage and Release Voltage www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 8/20 TSZ02201-0R7R0G300200-1-2 10.Apr.2023 Rev.003 BD52xx-2C Series BD53xx-2C Series Typical Performance Curves - continued Pull-up to 5V Pull-up resistance: 100kΩ Pull-up to VDD Pull-up resistance: 100kΩ 6.0 4.0 BD5230G-2C BD5230G-2C 3.5 Output Voltage : VOUT(V) Output Voltage : VOUT(V) 5.0 Ta=125°C 4.0 Ta=105°C Ta=25°C 3.0 Ta=-40°C 2.0 1.0 3.0 2.5 2.0 1.5 Ta=125°C Ta=105°C 1.0 Ta=25°C 0.5 0.0 Ta=-40°C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 2.0 2.5 Supply Voltage : VDD (V) Supply Voltage : VDD (V) Figure 17. I/O Characteristics Figure 18. I/O Characteristics 3.0 3.5 Pull-up to VDD Pull-up resistance: 100kΩ Pull-up to 5V Pull-up resistance: 100kΩ 1.0 Minimum Operating Voltage: VOPL(V) 1.0 Minimum Operating Voltage: VOPL(V) 1.5 0.8 0.6 0.4 0.2 0.8 0.6 0.4 0.2 0.0 0.0 -40 -25 -10 5 -40 -25 -10 20 35 50 65 80 95 110 125 5 20 35 50 65 80 95 110 125 Temperature : Ta (°C) Temperature : Ta (°C) Figure 19. Operating Limit Voltage Figure 20. Operating Limit Voltage www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 9/20 TSZ02201-0R7R0G300200-1-2 10.Apr.2023 Rev.003 BD52xx-2C Series BD53xx-2C Series Typical Performance Curves - continued 70 70 BD5309G-2C BD5250G-2C VDD = 2V 60 "Low" Output Current : IOL(mA) "High" Output Current : IOH(mA) 60 VDD = 4V 50 40 30 VDD = 3V 20 VDD = 2V 10 50 40 30 20 VDD = 1.2V 10 VDD = 0.85V VDD = 1.2V 0 0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 1.0 1.5 2.0 2.5 Drain-Source Voltage : VDS (V) Drain-Source Voltage : VDS (V) Figure 21. “High” Output Current Figure 22. “Low” Output Current 35 3.0 70 BD5309G-2C Ta=25°C 25 Ta=105°C 20 BD5220G-2C 60 Ta=-40°C "Low" Output Current : IOL(mA) 30 "High" Output Current : IOH(mA) 0.5 Ta=125°C 15 10 5 Ta=-40°C 50 Ta=25°C 40 Ta=105°C 30 Ta=125°C 20 10 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 0.5 1.0 1.5 2.0 2.5 Supply Voltage : VDD (V) Supply Voltage : VDD (V) Figure 23. “High” Output Current (VDS=0.5V) Figure 24. “Low” Output Current (VDS=0.5V) www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/20 3.0 TSZ02201-0R7R0G300200-1-2 10.Apr.2023 Rev.003 BD52xx-2C Series BD53xx-2C Series Typical Performance Curves - continued 70 80 60 CCT=10nF Delay Time (H~L) : tPHL(µs) Delay Time (L~H) : tPLH(ms) 70 60 50 40 CCT=4.7nF 30 20 50 40 30 20 10 10 0 0 -40 -25 -10 5 -40 -25 -10 20 35 50 65 80 95 110 125 5 20 35 50 65 80 95 110 125 Temperature : Ta (°C) Temperature : Ta (°C) Figure 26. Output Delay Time (H to L) Figure 25. Output Delay Time (L to H) 100000 70 Ta=-40°C Delay Time (H~L) : tPHL(µs) Delay Time (L~H) : tPLH(ms) 60 Ta=25°C 10000 Ta=105°C 1000 Ta=125°C 100 10 1 0.1 0.0001 50 40 30 20 10 0.001 0.01 0.1 1 10 CT Pin Capacitance : CCT (µF) 0.001 0.01 0.1 1 10 CT Pin Capacitance : CCT (µF) Figure 27. Output Delay Time (L to H) www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0 0.0001 Figure 28. Output Delay Time (H to L) 11/20 TSZ02201-0R7R0G300200-1-2 10.Apr.2023 Rev.003 BD52xx-2C Series BD53xx-2C Series Application Information 1. Explanation of Operation For both the open drain type (Figure 29) and the CMOS output type (Figure 30), the detection and release voltages are used as threshold voltages. When the voltage applied to the VDD pin reaches the applicable threshold voltage, the VOUT pin voltage switches from either “High” to “Low” or from “Low” to “High”. BD52xx-2C series and BD53xx-2C series have delay time function which set tPLH (output “Low” to ”High”) using an external capacitor connected in CT pin (CCT). Because the BD52xx-2C series uses an open drain output type, it is necessary to connect a pull up resistor to VDD or another power supply if needed [The output “High” voltage (VOUT) in this case becomes VDD or the voltage of the other power supply]. VDD VDD VOUT Vref Delay Circuit Delay Circuit Vref GND GND CT CT Figure 30. (BD53xx-2C type internal block diagram) Figure 29. (BD52xx-2C type internal block diagram) 2. VOUT Setting of Detector Delay Time Delay time L to H (tPLH) is the time when VOUT rises to 1/2 of VDD after VDD rises up and beyond the release voltage (VDET+∆VDET). The delay time (tPLH) at the rise of VDD is determined by delay coefficient, CT capacitor and delay time when CT pin is open (tCTO) and calculated from the following formula. When CT capacitor ≥ 1nF, tCTO has less effect and tPLH computation is shown on Example No.2. The result has ±50% tolerance within the operating temperature range of -40°C to +125°C Formula: (Ta=25°C) 𝑡𝑃𝐿𝐻 = 𝐶𝐶𝑇 × 𝐷𝑒𝑙𝑎𝑦 𝐶𝑜𝑒𝑓𝑓𝑖𝑐𝑖𝑒𝑛𝑡 + 𝑡𝐶𝑇𝑂 [s] where: CCT is the CT pin external capacitor Delay Coefficient is equal to 5.55 x 106 tCTO is the delay time when CT=open Note1 Temperature Ta = -40°C to +125°C Delay Time (tCTO) Min 15µs Typ 50µs Max 150µs Note1: tCTO is design guarantee only; outgoing inspection is not done on all products. Example No.1: CT capacitor = 100pF 𝑡𝑃𝐿𝐻_𝑚𝑖𝑛 = (100 × 10−12 × 5.55 × 106 ) × 0.5 + 15 × 10−6 = 292µ𝑠 𝑡𝑃𝐿𝐻_𝑡𝑦𝑝 = (100 × 10−12 × 5.55 × 106 ) × 1.0 + 50 × 10−6 = 605µ𝑠 𝑡𝑃𝐿𝐻_𝑚𝑎𝑥 = (100 × 10−12 × 5.55 × 106 ) × 1.5 + 150 × 10−6 = 983µ𝑠 Example No.2: CT capacitor = 1nF 𝑡𝑃𝐿𝐻_𝑡𝑦𝑝 = 1 × 10−9 × 5.55 × 106 = 5.55𝑚𝑠 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/20 TSZ02201-0R7R0G300200-1-2 10.Apr.2023 Rev.003 BD52xx-2C Series BD53xx-2C Series 3. Timing Waveform The following shows the relationship between the input voltage VDD and the output voltage VOUT when the power supply voltage VDD is sweep up and sweep down. VDD RL VDD Delay Circuit Vref VOUT GND CT CCT Figure 31. BD52xx-2C Set-up VDD ⑤ VDET+ΔVDET Hysteresis Voltage (ΔVDET) VDET VOPL: