BD6529GUL

Power Management Switch ICs for PCs and Digital Consumer Products Load Switch ICs for Portable Equipment BD6528HFV,BD6529GUL No.11029ECT19 ●Description Power switch for memory card Slot (BD6528HFV, BD6529GUL) is a high side switch IC having one circuit of N-channel Power MOSFET. This switch IC achieves ON resistance of 100mΩ with BD6529GUL; and 110mΩ with BD6528HFV. Operations from low input voltage (VIN≦2.7V) is possible; made for use of various switch applications. BD6524HFV is available in a space-saving HVSOF6 package. BD6529GUL is available in a space-saving VCSP-6 package. ●Features 1) Single channel of Low On-Resistance (Typ. = 100mΩ) N-channel MOSFET built in 2) 500mA output current 3) Low voltage switch capability 4) Soft-start function 5) Output discharge circuit 6) Reverse current flow blocking at switch off 7) HVSOF6 package for BD6528HFV VCSP50L1 package for BD6529GUL ●Applications Memory card slots of Mobile phone, Digital still camera, PDA, MP3 player, PC, etc. ●Line up matrix Part Number BD6528HFV BD6529GUL ON resistance 110mΩ 100mΩ Output current 500mA 500mA Discharge circuit ○ ○ Logic Control Input High High Package HVSOF6 1.6 x 3.0 mm VCSP50L1 1.5 x 1.0 mm ●Absolute maximum ratings Parameter Supply voltage VIN voltage EN voltage VOUT voltage Storage temperature Power dissipation *1 *2 * * Symbol VDD VIN VEN VOUT TSTG Pd Ratings -0.3 ～ 6.0 -0.3 ～ 6.0 -0.3 ～ VDD + 0.3 -0.3 ～ 6.0 -55 ～ 150 849 *1 (BD6528HFV) 575 *2 (BD6529GUL) Unit V V V V ℃ mW Mounted on 70mm * 70mm * 1.6mm Glass-epoxy PCB. Derating: 6.8mW /℃ at Ta > 25℃ Mounted on 50mm * 58mm * 1.75mm Glass-epoxy PCB. Derating: 4.6mW / ℃ at Ta > 25℃ This product is not designed for protection against radioactive rays. Operation is not guaranteed. ●Operating conditions Parameter Operating voltage Switch input voltage Operation temperature Output current Symbol VDD VIN TOPR ILO Ratings Min. 2.7 0 -25 0 Typ. 3.3 1.2 25 Max. 4.5 2.7 85 500 Unit V V ℃ mA www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/11 2011.05 - Rev.C BD6528HFV,BD6529GUL ●Electrical characteristics ○BD6528HFV(unless otherwise specified, VDD =3.3V, VIN = 1.2V, Ta = 25℃) Limits Parameter Symbol Unit Min. Typ. Max. [Current consumption] Operating current Standby current [I/O] EN input voltage EN input current [Power switch] On-resistance Switch leakage current Output rise time Output turn-on time Output fall time Output turn-off time [Discharge circuit] Discharge on-resistance Parameter RDISC IDISC 70 15 110 20 Ω mA RON ILEAK TON1 TON2 TOFF1 TOFF2 110 0.01 0.5 0.6 1 15 10 1 2 20 100 mΩ µA ms ms µs µs IOUT = 500mA VENH VENL IEN 1.2 -1 0.4 1 V V µA High level input Low level input IDD ISTB 20 0.01 30 1 µA µA VEN = 1.2V VEN = 0V Technical Note Condition VEN = 0V or VEN = 1.2V VEN = 0V, VOUT = 0V RL = 10Ω, VOUT 10% → 90% RL = 10Ω, VEN High →VOUT 90% RL = 10Ω, VOUT 90% → 10% RL = 10Ω, VEN Low →VOUT 10% IOUT = -1mA, VEN = 0V VOUT = 3.3V, VEN = 0V ○BD6529GUL(unless otherwise specified, VDD =3.3V, VIN = 1.2V, Ta = 25℃) Limits Parameter Symbol Unit Min. Typ. Max. [Current consumption] Operating current Standby current [I/O] EN input voltage EN input current [Power switch] On Resistance Switch leakage current Output turn on rise time Output turn on time Output turn off fall time Output turn off time [Discharge circuit] Discharge on-resistance Discharge current RDISC IDISC 70 15 110 20 Ω mA RON ILEAK TON1 TON2 TOFF1 TOFF2 100 0.01 0.5 0.6 0.1 1 10 1 2 4 6 mΩ µA ms ms µs µs VENH VENL IEN 1.2 -1 0.4 1 V V µA IDD ISTB 20 0.01 30 1 µA µA VEN = 1.2V VEN = 0V Condition High level input Low level input VEN = 0V or VEN = 1.2V IOUT = 500mA VEN = 0V, VOUT = 0V RL = 10Ω, VOUT 10% → 90% RL = 10Ω, VEN High →VOUT 90% RL = 10Ω, VOUT 90% → 10% RL = 10Ω, VEN Low →VOUT 10% IOUT = -1mA, VEN = 0V VOUT = 3.3V, VEN = 0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/11 2011.05 - Rev.C BD6528HFV,BD6529GUL ●Test circuit VIN VDD V IN V DD V EN EN VOUT VOUT GND RL CL Technical Note Fig.1 Measurement circuit ●Switch output turn ON/OFF timing VEN 50% TON2 50% TOFF2 90% VOUT 10% TON1 90% 10% TOFF1 Fig.2 Timing diagrams www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/11 2011.05 - Rev.C BD6528HFV,BD6529GUL ●Reference data 30 30 1.0 Technical Note Ta=25ºC OPERATING CURRENT : IDD [µA] OPERATING CURRENT : IDD [μA] 25 20 15 10 5 0 2 3 4 5 SUPPLY VOLTAGE : VDD [V] 25 20 15 10 5 VDD=3.3V STANDBY CURRENT : ISTB[uA] 0.8 0.6 Ta=25ºC 0.4 0.2 0.0 0 -50 0 50 100 2 AMBIENT TEMPERATURE : Ta [°C] 3 4 SUPPLY VOLTAGE : VDD [V] 5 Fig.3 Operating current EN enable Fig.4 Operating current EN enable Fig.5 Standby current EN disable 1.0 2.0 2.0 Ta=25ºC VDD=3.3V STANDBY CURRENT : ISTB[uA] 0.8 0.6 ENABLE INPUT VOLTAGE: VEN [V] 1.5 VDD=3.3V ENABLE INPUT VOLTAGE : VEN [V] 1.5 1.0 1.0 0.4 0.2 0.0 -50 0.5 0.5 0.0 0 50 100 AMBIENT TEMPERATURE : Ta [°C] 2 3 4 SUPPLY VOLTAGE : VDD [V] 5 0.0 -50 0 50 100 AMBIENT TEMPERATURE : Ta [°C] Fig.6 Standby current EN disable Fig.7 EN input voltage Fig.8 EN input voltage 200 200 200 ON RESISTANCE : RON [mΩ] ON RESISTANCE : RON [mΩ] ON RESISTANCE : RON [mΩ] 150 Ta=25ºC VIN=1.2V IOUT=100mA 150 VDD=3.3V VIN=1.2V IOUT=100mA VDD=3.3V IOUT=100mA 150 Ta=85ºC 100 100 100 Ta=25ºC Ta=-25ºC 50 50 50 0 2 3 4 SUPPLY VOLTAGE : VDD [V] 5 0 -50 0 0 50 100 AMBIENT TEMPERATURE : Ta [°C] 0 1 2 3 INPUT VOLTAGE : VIN [V] Fig.9 On-resistance vs. VDD (BD6528HFV) Fig.10 On-resistance vs. temperature (BD6528HFV) Fig.11 On-resistance vs. VIN (BD6528HFV) 200.0 200 200 VDD=3.3V VIN=1.2V ON RESISTANCE : RON [mΩ] ON RESISTANCE : RON [mΩ] 150.0 150 Ta=85ºC 100.0 Ta=25ºC Ta=-25ºC 100 50.0 50 ON RESISTANCE : RON [mΩ] Ta=25ºC VIN=1.2V IOUT=100mA 150 VDD=3.3V VIN=1.2V IOUT=100mA 100 50 0.0 0 200 400 600 OUTPUT CURRENT : IOUT [mA] 0 2 3 4 5 SUPPLY VOLTAGE : VDD [V] 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta [°C] Fig.12 On-resistance vs. IOUT (BD6528HFV) Fig.13 On-resistance vs. VDD (BD6529GUL) Fig.14 On-resistance vs. temperature (BD6529GUL) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/11 2011.05 - Rev.C BD6528HFV,BD6529GUL Technical Note 200 200 1.0 VDD=3.3V IOUT=100mA ON RESISTANCE : RON[mΩ] ON RESISTANCE : RON [mΩ] 150 150 VDD=3.3V VIN=1.2V 0.8 RISE TIME : TON1 [ms] 0.6 Ta=25ºC RL=10Ω 100 Ta=85ºC Ta=25ºC Ta=-25ºC Ta=85ºC 100 Ta=25ºC Ta=-25ºC 0.4 0.2 0.0 50 50 0 0 1 2 INPUT VOLTAGE : VIN [V] 3 0 0 200 400 600 OUTPUT CURRENT : IOUT [mA] 2 3 4 5 SUPPLY VOLTAGE : VDD [V] Fig.15 On-resistance vs. VIN (BD6529GUL) Fig.16 On-resistance vs. IOUT (BD6529GUL) Fig.17 Output rise time 1 0.8 RISE TIME : TON1 [ms] 0.6 2.0 2.0 VDD=3.3V RL=10Ω TURN ON TIME : TON2 [ms] 1.6 1.2 0.8 0.4 0.0 0 50 100 Ta=25ºC RL=10Ω TURN ON TIME : TON2 [ms] 1.6 1.2 VDD=3.3V RL=10Ω 0.4 0.2 0 -50 0.8 0.4 0.0 2 3 4 5 -50 0 50 100 AMBIENT TEMPERATURE : Ta [°C] SUPPLY VOLTAGE : VDD [V] AMBIENT TEMPERATURE : Ta [°C] Fig.18 Output rise time Fig.19 Output turn-on time Fig.20 Output turn-on time 1.0 0.8 FALL TIME : TOFF1[us] 0.6 0.4 0.2 0.0 2 3 4 SUPPLY VOLTAGE : VDD [V] 5 Ta=25ºC RL=10Ω 1.0 0.8 FALL TIME : TOFF1 [us] 0.6 50 VDD=3.3V RL=10Ω TURN OFF TIME : TOFF2 [us] 40 30 Ta=25ºC RL=10Ω 0.4 0.2 0.0 -50 0 50 100 AMBIENT TEMPERATURE : Ta [°C] 20 BD6528HFV 10 BD6529GUL 0 2 3 4 5 SUPPLY VOLTAGE : VDD [V] Fig.21 Output fall time Fig.22 Output fall time Fig.23 Output turn-off time 50 DISCHARSE ON RESISTANCE : RDISC[Ω] 40 TURN OFF TIME : TOFF2[us] 30 20 200 DISCHARSE ON RESISTANCE : RDISC [O] 200 VDD=3.3V RL=10Ω VDD=3.3V 150 Ta=25ºC 150 100 100 BD6528HFV 10 50 50 BD6529GUL 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta [°C] 0 2 3 4 5 SUPPLY VOLTAGE : VDD [V] 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta [°C] Fig.24 Output turn-off time Fig.25 Discharge on-resistance Fig.26 Discharge on-resistance www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/11 2011.05 - Rev.C BD6528HFV,BD6529GUL ●Waveform data VEN (0.5V/div.) VEN (0.5V/div.) Technical Note VOUT (0.2V/div.) VDD=3.3V VIN=1.2V RL=500Ω CL=4.7uF VOUT (0.2V/div.) VDD=3.3V VIN=1.2V RL=500Ω CL=4.7uF IOUT (10mA/div.) IOUT (10mA/div.) TIME (0.2ms/div.) TIME (0.2ms/div.) Fig.27 Output turn-on response BD6528HFV Fig.28 Output turn-off response BD6528HFV VEN (0.5V/div.) VEN (0.5V/div.) VOUT (0.2V/div.) VDD=3.3V VIN=1.2V RL=10Ω CL=4.7uF VOUT (0.2V/div.) VDD=3.3V VIN=1.2V RL=10Ω CL=4.7uF IOUT (50mA/div.) IOUT (50mA/div.) TIME (0.2ms/div.) Fig.29 Output turn-on response BD6528HFV TIME (0.2ms/div.) Fig.30 Output turn-off response BD6528HFV VEN (0.5V/div.) VEN (0.5V/div.) VOUT (0.2V/div.) VDD=3.3V VIN=1.2V RL=500Ω CL=4.7µF VOUT (0.2V/div.) VDD=3.3V VIN=1.2V RL=500Ω CL=4.7µF IOUT (10mA/div.) IOUT (10mA/div.) TIME (0.2ms/div.) TIME (0.2ms/div.) Fig.31 Output turn-on response BD6529GUL Fig.32 Output turn-off response BD6529GUL VEN (0.5V/div.) VEN (0.5V/div.) VEN (2V/div.) VIN=1.2V VDD=3.3V VOUT (0.2V/div.) VDD=3.3V VIN=1.2V RL=10Ω CL=4.7µF VOUT (0.2V/div.) VDD=3.3V VIN=1.2V RL=10Ω CL=4.7µF VOUT (1V/div.) CL=22µF CL=10uF CL=4.7uF IOUT (50mA/div.) TIME (0.2ms/div.) IOUT (50mA/div.) TIME (0.2ms/div.) IOUT (20mA/div.) TIME (0.2ms/div.) Fig.33 Output turn-on response BD6529GUL Fig.34 Output turn-off response BD6529GUL Fig.35 Rush current response www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/11 2011.05 - Rev.C BD6528HFV,BD6529GUL ●Block diagram B A VIN VDD 1 VOUT EN 2 Technical Note VIN VDD VOUT VOUT GND 3 BD6529GUL (Bottom view) charge pump GND EN BD6528HFV (Top view) Fig.36 Block diagram ●Pin description Pin number 1 (A3) 2, 3 (B2, B3) 4 (B1) 5 (A1) 6 (A2) ●I/O equivalent circuit Pin name Pin number Equivalent circuit VDD Pin name GND VOUT VIN VDD EN Ground Switch output (connect each pin externally) Switch input Power supply (for switch control and drive circuit) Enable input (Active-High Switch on input) Pin function Fig.37 Pin configuration EN 6 (A2) EN VIN VOUT 4 (B1) 2, 3 (B2, B3) VIN VOUT www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/11 2011.05 - Rev.C BD6528HFV,BD6529GUL ●Operation description 1. Switch operation Technical Note Each VIN and VOUT pins are connected to MOSFET’s drain and source. By setting EN input to High level, the internal charge pump operates and turns on MOSFET. When MOSFET is turned on, the switch becomes bidirectional characteristics. Consequently, in case of VIN < VOUT, the current is flowing from VOUT to VIN. Since there is no parasitic diode between switch’s drain and source, it prevents the reverse current flow from VOUT to VIN during switch off stage. 2. Output discharge circuit Discharge circuit operates when switch is off. When discharge circuit operates, 70Ω (Typ.) resistor is connected between VOUT pin and GND pin. This discharges the electrical charge quickly. VDD VIN EN VOUT Discharge circuit ON OFF ON OFF ON Fig.38 Operation timing ●Application circuit example V IN VDD V IN V DD ON / OFF EN VOUT VOUT GND LOAD Fig.39 Application circuit example * This application circuit does not guarantee its operation. When the external circuit constant, etc. is changed, be sure to consider adequate margins; by taking into account external parts and/or IC’s dispersion including not only static characteristics, but also transient characteristics. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/11 2011.05 - Rev.C BD6528HFV,BD6529GUL ●Power dissipation characteristics 900 800 POWER DISSIPATION : Pd [mW] 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta [ ℃] Technical Note Fig.40 Power dissipation curve (Pd-Ta Curve) (HVSOF6 package) 700 600 POWER DISSIPATION : Pd [mW] 500 400 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta [ ℃] Fig.41 Power dissipation curve (Pd-Ta Curve) (VCSP50L1 package) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/11 2011.05 - Rev.C BD6528HFV,BD6529GUL ●Notes foe use Technical Note (1) Absolute Maximum Ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical safety measures including the use of fuses, etc. (2) Power supply and GND line Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. Pay attention to the interference by common impedance of layout pattern when there are plural power supplies and GND lines. Especially, when there are GND pattern for small signal and GND pattern for large current included the external circuits, separate each GND pattern. Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal. At the same time, in order to use a capacitor, thoroughly check to be sure the characteristics of the capacitor to be used present no problem including the occurrence of capacity dropout at a low temperature, thus determining the constant. (3) GND voltage Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state. Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric transient. (4) Short circuit between terminals and erroneous mounting In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous mounting can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or between the terminal and the power supply or the GND terminal, the ICs can break down. (5) Operation in strong electromagnetic field Be noted that using ICs in the strong electromagnetic field can malfunction them. (6) Input terminals In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of the parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input terminals a voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not apply a voltage to the input terminals when no power supply voltage is applied to the IC. In addition, even if the power supply voltage is applied, apply to the input terminals a voltage lower than the power supply voltage or within the guaranteed value of electrical characteristics. (7) External capacitor In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc. (8) Thermal design Perform thermal design in which there are adequate margins by taking into account the power dissipation (PD) in actual states of use. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/11 2011.05 - Rev.C BD6528HFV,BD6529GUL ●Ordering part number Technical Note B D 6 Part No. 6528 6529 5 2 8 H F V - T R Part No. Package HFV: HVSOF6 GUL: VCSP50L1 Packaging and forming specification TR: Embossed tape and reel (HVSOF6) E2: Embossed tape and reel (VCSP50L1) HVSOF6 1.6±0.1 (MAX 1.8 include BURR) 2.6±0.1 (MAX 2.8 include BURR) (1.5) Tape Quantity (0.45) Embossed carrier tape 3000pcs TR The direction is the 1pin of product is at the upper right when you hold 654 3.0±0.1 Direction of feed (1.2) (1.4) 123 ( reel on the left hand and you pull out the tape on the right hand 1pin ) (0.15) 0.145±0.05 S 0.1 S 0.22±0.05 0.5 0.75Max. Direction of feed (Unit : mm) Reel ∗ Order quantity needs to be multiple of the minimum quantity. VCSP50L1(BD6529GUL) 1.00±0.05 Tape Quantity 0.10±0.05 0.55MAX 1PIN MARK Embossed carrier tape (heat sealing method) 3000pcs E2 The direction is the 1pin of product is at the upper left when you hold 1.50±0.05 Direction of feed S ( reel on the left hand and you pull out the tape on the right hand ) 6-φ0.25±0.05 0.05 A B BB A 1 2 A 0.5 0.25±0.05 (φ0.15)INDEX POST 0.08 S 3 0.25±0.05 P=0.5×2 1pin (Unit : mm) Reel Direction of feed ∗ Order quantity needs to be multiple of the minimum quantity. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 11/11 2011.05 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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