BD6550G_11

1/4 STRUCTURE PRODUCT Silicon Monolithic Integrated Circuit CONSTANT VOLTAGE AND CONSTANT CURRENT CONTROLLER FOR BATTERY CHARGERS AND ADAPTORS TYPE ＢＤ６５５０Ｇ FEATURE ・ Constant current and constant voltage control ・ High accuracy reference voltage: 1.21V±1% ・ An accuracy for current-detecting voltage: ±2% ○ ABSOLUTE MAXIMUM RATINGS PARAMETER Power Supply Voltage ICT Pin Maximum Voltage Power Dissipation Operating Temperature Range Storage Temperature Range (Ta=25℃) Symbol VMAX VICTMAX Pd Topr Tstg Limit -0.3 ～ 14 -0.3 ～ VCC 675 *1 0 ～ +85 -55 ～ +150 Unit V V mW ℃ ℃ *1 Pd derated at 5.4mW/℃ for temperature above Ta=25℃, mounted on 70mm×70mm×1.6mm glass-epoxy PCB. ○ OPERATING CONDITIONS (Ta=0～+85℃) PARAMETER Symbol Power Supply Voltage VCC Limit 2.5～12 Unit V REV. B 2/4 ○ ELECTRICAL CHARACTERSTICS PARAMETER 【Total Current Consumption】 Total Supply Current - not taking the output sinking current into account 【Voltage Control Loop】 Transconduction Gain(VCT). Sink Current Only Voltage Control Loop Reference at 1.5mA sinking current Input Bias Current(VCT) 【Current Control Loop】 Transconduction Gain(ICT). Sink Current Only Current Control Loop Reference at 2.5mA sinking current Current out of pin ICT at -200mV 【Output Stage】 Low output voltage at 10mA sinking current Output Short Circuit Current, Output to VCC, Sink Current Only *1 Design Guarantee (Ta=25℃ and Vcc=+5V (unless otherwise specified)) Symbol MIN. - Limit TYP. 0.9 MAX. 2 UNIT Conditions ICC mA GMV VREF Ibv GMI VSE Ibi VOL IOS 1 1.198 1.186 1.5 196 192 - 4.0 1.21 1.21 50 4.0 200 200 25 200 20 1.222 1.234 204 208 50 mA/mV V nA mA/mV mV μA mV mA *1 Ta=25℃ 0 < Ta < 85℃ *1 *1 *1 Ta=25℃ 0 < Ta < 85℃ *1 VSE=0V, ICT=-0.3V OUT=VCC, VSE=0V, ICT=-0.3V ● This product is not designed for protection against radio active rays. ○ PACKEGE, MARKING SPECIFICATION SSOP6 (UNIT:mm) REV. B 3/4 ○ BLOCK DIAGRAM VCC 6 1.21V + 3 OUT VOLTAGE REFERENCE 1 VCT + 2 GND 4 ICT 5 VSE ○ PIN No. & PIN NAME PIN No. PIN Name 1 2 3 4 5 6 VCT GND OUT ICT VSE VCC Function Input Pin of the Voltage Control Loop Ground Line. 0V Reference For All Voltages Output Pin. Sinking Current Only Input Pin of the Current Control Loop(+) Input Pin of the Current Control Loop(-) Positive Power Supply Line REV. B 4/4 ○ Operation Notes 1) Absolute maximum ratings Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range may result in IC deterioration or damage. Assumptions should not be made regarding the state of the IC (short mode or open mode) when such damage is suffered. A physical safety measure such as a fuse should be implemented when use of the IC in a special mode where the absolute maximum ratings may be exceeded is anticipated. 2) GND potential Ensure a minimum GND pin potential in all operating conditions. In addition, ensure that no pins other than the GND pin carry a voltage lower than or equal to the GND pin, including during actual transient phenomena. As an exception, the circuit design allows voltages up to -0.3 V to be applied to the ICT pin. 3) Setting of heat Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. 4) Pin short and mistake fitting Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result in damage to the IC. Shorts between output pins or between output pins and the power supply and GND pin caused by the presence of a foreign object may result in damage to the IC. 5) Actions in strong magnetic field Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction. 6) Mutual impedance Power supply and ground wiring should reflect consideration of the need to lower mutual impedance and minimize ripple as much as possible (by making wiring as short and thick as possible or rejecting ripple by incorporating inductance and capacitance). 7) Regarding input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of parasitic elements. For example, when a resistor and transistor are connected to pins as shown in Fig. 19, the P/N junction functions as a parasitic diode when GND > (Pin A) for the resistor or GND > (Pin B) for the transistor (NPN). Similarly, when GND > (Pin B) for the transistor (NPN), the parasitic diode described above combines with the N layer of other elements to operate as a parasitic NPN transistor. The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result of the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will trigger the operation of parasitic elements, such as by the application of voltages lower than the GND (P substrate) voltage to I/O pins. Although the circuit design allows voltages up to -0.3 V to be applied to the ICT pin, voltages lower than this may cause the behavior described above. Use caution when designing the circuit. (Pin A) Resistor (Pin B) ～ ～ P N P substrate GND P+ N N Transistor (NPN) B E C ～ ～ N P+ N P substrate Parasitic elements (Pin B) B C E GND Other Adjacent Elements Parasitic elements Parasitic elements GND ～ ～ ～ ～ GND GND P P+ N P+ N Parasitic elements (Pin A) Simplified structure of a Monolithic IC REV. B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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